BSS126
N-channel Depletion Mode MOSFETThe BSS126 is a n-channel depletion mode mosfet from Infineon Technologies. View the full BSS126 datasheet below including key specifications, pinout, absolute maximum ratings.
BSS126 shares its datasheet with BSS126H6327, whose page lists every part number it covers.
Official BSS126 datasheet (PDF) — the source this page was extracted from.
BSS126 Key Specifications
| Parameter | Value |
|---|---|
| Power Dissipation | 0.50 W (TA=25 °C) |
| Gate-Source Voltage | ±20 V |
| Pulsed Drain Current | 0.085 A |
| Total Gate Charge Qg | 1.4 nC typ |
| Input Capacitance Ciss | 21 pF typ |
| Continuous Drain Current | 0.021 A (TA=25 °C) |
| Drain-Source Voltage (VDS) | 600 V |
| Gate Threshold Voltage VGS(Th) | -2.7 V to -1.6 V (VDS=3 V, ID=8 μA) |
| Operating And Storage Temperature | -55 °C to 150 °C |
| Minimum On-State Drain Current IDSS | 7 mA (VGS=0 V, VDS=25 V) |
| Thermal Resistance Junction-Ambient | 250 K/W (minimal footprint) |
| Drain-Source On-Resistance RDS(On) Max | 700 Ω (VGS=0 V, ID=3 mA) |
BSS126 Overview
Part: BSS126
Type: N-channel Depletion Mode MOSFET
Description: N-channel depletion mode small-signal transistor with a 600 V drain-source breakdown voltage, 700 Ω maximum on-state resistance, and 21 mA continuous drain current at 25 °C.
Operating Conditions:
- Gate-source voltage: ±20 V
- Operating temperature: -55 to 150 °C
- Continuous drain current: 21 mA (at T_A=25 °C)
Absolute Maximum Ratings:
- Max gate source voltage: ±20 V
- Max continuous current: 0.021 A (at T_A=25 °C)
- Max junction/storage temperature: 150 °C
Key Specs:
- Drain-source breakdown voltage (V_BR)DSS: 600 V (V_GS=-5 V, I_D=250 μA)
- Gate threshold voltage (V_GS(th)): -2.7 V min, -2.0 V typ, -1.6 V max (V_DS=3 V, I_D=8 μA)
- Drain-source cutoff current (I_D(off)): 0.1 μA max (V_DS=600 V, V_GS=-5 V, T_j=25 °C)
- On-state drain current (I_DSS): 7 mA min (V_GS=0 V, V_DS=25 V)
- Drain-source on-state resistance (R_DS(on)): 320 Ω typ, 700 Ω max (V_GS=0 V, I_D=3 mA)
- Input capacitance (C_iss): 21 pF typ, 28 pF max (V_GS=-5 V, V_DS=25 V, f=1 MHz)
- Turn-on delay time (t_d(on)): 6.1 ns typ, 9.2 ns max (V_DD=300 V, V_GS=-3…7 V, I_D=0.01 A, R_G=6 Ω)
- Gate charge total (Q_g): 1.4 nC typ, 2.1 nC max (V_DD=400 V, I_D=10 mA, V_GS=-3 to 5 V)
Features:
- N-channel
- Depletion mode
- dv/dt rated
- Available with V_GS(th) indicator on reel
- Pb-free lead plating; RoHS compliant
- Qualified according to AEC Q101
- Halogen-free according to IEC61249-2-21
Applications:
Package:
- PG-SOT-23
BSS126 Features
- N-channel
- Depletion mode
- d v /d t rated
- Available with V GS(th) indicator on reel
- Pb-free lead plating; RoHS compliant
- Qualified according to AEC Q101
- Halogen-free according to IEC61249-2-21
| Type | Package | Pb-free | Tape and Reel Information | Marking |
|---|---|---|---|---|
| BSS126 BSS126 | PG-SOT-23 PG-SOT-23 | Yes Yes | H6327: 3000 pcs/reel H6327: 3000 pcs/reel | SHs SHs |
| BSS126 BSS126 | PG-SOT-23 PG-SOT-23 | Yes Yes | H6906: 3000 pcs/reel sorted in V GS(th) bands 1) H6906: 3000 pcs/reel sorted in V GS(th) bands 1) | SHs SHs |
BSS126 Pin Configuration
BSS126 Pinout — PG-SOT-23 Package
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | Gate | I | Gate terminal |
| 2 | Source | S | Source terminal |
| 3 | Drain | O | Drain terminal |
Notes
- Package: PG-SOT-23 (3-pin small-signal transistor package)
- Device Type: N-channel depletion-mode MOSFET with integrated reverse diode
- Pin identification: Confirmed from package outline diagram showing pin 1 (gate), pin 2 (source), and pin 3 (drain)
BSS126 Absolute Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Continuous drain current | I D | T A =25 °C T A =70 °C | 0.021 0.017 | A |
| Pulsed drain current | I D,pulse | T A =25 °C | 0.085 | |
| Reverse diode d v /d t | d v /d t | I D =0.016 A, V DS =20 V, d i /d t =200 A/μs, T j,max =150 °C | 6 | kV/μs |
| Gate source voltage | V GS | ±20 | V | |
| ESD sensitivity (HBM) as per JESD22-A114 | Class 0 (0 >250 V) | |||
| Power dissipation | P tot | T A =25 °C | 0.50 | W |
| Operating and storage temperature | T j , T stg | -55 ... 150 | °C | |
| IEC climatic category; DIN IEC 68-1 | 55/150/56 |
BSS126 Package Information
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| BSS126H6327 | Infineon Technologies | PG-SOT-23 |
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All MOSFETs datasheetsAll Infineon Technologies datasheets (140)
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