BSS126

Part: BSS126

Type: N-channel Depletion Mode MOSFET

Description: N-channel depletion mode small-signal transistor with a 600 V drain-source breakdown voltage, 700 Ω maximum on-state resistance, and 21 mA continuous drain current at 25 °C.

Operating Conditions:

• Gate-source voltage: ±20 V
• Operating temperature: -55 to 150 °C
• Continuous drain current: 21 mA (at T_A=25 °C)

Absolute Maximum Ratings:

• Max gate source voltage: ±20 V
• Max continuous current: 0.021 A (at T_A=25 °C)
• Max junction/storage temperature: 150 °C

Key Specs:

• Drain-source breakdown voltage (V_BR)DSS: 600 V (V_GS=-5 V, I_D=250 μA)
• Gate threshold voltage (V_GS(th)): -2.7 V min, -2.0 V typ, -1.6 V max (V_DS=3 V, I_D=8 μA)
• Drain-source cutoff current (I_D(off)): 0.1 μA max (V_DS=600 V, V_GS=-5 V, T_j=25 °C)
• On-state drain current (I_DSS): 7 mA min (V_GS=0 V, V_DS=25 V)
• Drain-source on-state resistance (R_DS(on)): 320 Ω typ, 700 Ω max (V_GS=0 V, I_D=3 mA)
• Input capacitance (C_iss): 21 pF typ, 28 pF max (V_GS=-5 V, V_DS=25 V, f=1 MHz)
• Turn-on delay time (t_d(on)): 6.1 ns typ, 9.2 ns max (V_DD=300 V, V_GS=-3…7 V, I_D=0.01 A, R_G=6 Ω)
• Gate charge total (Q_g): 1.4 nC typ, 2.1 nC max (V_DD=400 V, I_D=10 mA, V_GS=-3 to 5 V)

Features:

• N-channel
• Depletion mode
• dv/dt rated
• Available with V_GS(th) indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21

Applications:

Package:

• PG-SOT-23

• N-channel
• Depletion mode
• d v /d t rated
• Available with V GS(th) indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21