FDC2512

Part: FDC2512 — onsemi

Type: N-Channel POWERTRENCH MOSFET

Description: 150 V, 1.4 A N-channel MOSFET with 425 mΩ max RDS(on) at VGS = 10 V and 8 nC typical gate charge, optimized for DC/DC converters.

Operating Conditions:

• Supply voltage: not applicable
• Operating temperature: -55 to +150 °C (junction)
• Drain-source voltage rating: 150 V; gate-source voltage ±20 V

Absolute Maximum Ratings:

• Max drain-source voltage (VDSS): 150 V
• Max gate-source voltage (VGSS): ±20 V
• Max continuous drain current (ID): 1.4 A (pulsed: 8 A)
• Max junction/storage temperature: -55 to +150 °C
• Single pulse avalanche energy (EAS): 13.5 mJ
• Power dissipation (PD): 1.6 W (Note 1a), 0.8 W (Note 1b)

Key Specs:

• RDS(on): 319 mΩ typ / 425 mΩ max (VGS = 10 V, ID = 1.4 A); 332 mΩ typ / 475 mΩ max (VGS = 6 V, ID = 1.3 A); 624 mΩ typ / 875 mΩ max (VGS = 10 V, ID = 1.4 A, TJ = 125 °C)
• Gate threshold voltage VGS(th): 2 V min, 2.6 V typ, 4 V max (VDS = VGS, ID = 250 μA)
• Breakdown voltage BVDSS: 150 V min (VGS = 0 V, ID = 250 μA)
• IDSS: 1 μA max (VDS = 120 V, VGS = 0 V)
• Total gate charge Qg: 8 nC typ, 11 nC max (VDS = 75 V, ID = 1.4 A, VGS = 10 V)
• Ciss / Coss / Crss: 344 / 22 / 9 pF typ (VDS = 75 V, f = 1 MHz)
• Switching: td(on) 6.5 ns typ, tr 3.5 ns typ, td(off) 22 ns typ, tf 4 ns typ (VDD = 75 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω)
• Thermal resistance RθJA: 78 °C/W (1 in² 2 oz copper pad); 156 °C/W (minimum pad); RθJC: 30 °C/W

Features:

• 1.4 A, 150 V
• Low gate charge (8 nC typ)
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
• Fast switching speed
• Pb-free and halide free

Applications:

• DC/DC converters

Package:

• TSOT-23-6 (SUPERSOT-6), CASE 419BL, 3000 / tape & reel

• 1.4 A, 150 V.

RDS(ON) = 425 m W @ VGS = 10 V

$$R_{DS(ON)} = 475\ \text{m}\Omega\ @\ V_{GS} = 6\ \text{V}$$

• Low Gate Charge (8 nC Typ)
• High Performance Trench Technology for Extremely Low RDS(ON)
• High Power and Current Handling Capability
• This is a Pb -Free and Halide Free Device
• Fast Switching Speed

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
OFF CHARACTERISTICS	OFF CHARACTERISTICS	OFF CHARACTERISTICS	OFF CHARACTERISTICS	OFF CHARACTERISTICS	OFF CHARACTERISTICS	OFF CHARACTERISTICS
BV DSS	Drain-Source Breakdown Voltage	V GS = 0 V, I D = 250 m A	150	-	-	V
D BV DSS D T J	Breakdown Voltage Temperature Coefficient	I D = 250 m A, Referenced to 25 ° C	-	147	-	mV/ ° C
I DSS	Zero Gate Voltage Drain Current	V DS = 120 V, V GS = 0 V	-	-	1	m A
I GSSF	Gate-Body Leakage, Forward	V GS = 20 V, V DS = 0 V	-	-	100	nA
I GSSR	Gate-Body Leakage, Reverse	V GS = - 20 V, V DS = 0 V	-	-	- 100	nA
ON CHARACTERISTICS (Note 2)	ON CHARACTERISTICS (Note 2)	ON CHARACTERISTICS (Note 2)	ON CHARACTERISTICS (Note 2)	ON CHARACTERISTICS (Note 2)	ON CHARACTERISTICS (Note 2)	ON CHARACTERISTICS (Note 2)
V GS(th)	Gate Threshold Voltage	V DS = V GS , I D = 250 m A	2	2.6	4	V
D V GS(th) D T J	Gate Threshold Voltage Temperature Coefficient	I D = 250 m A, Referenced to 25 ° C	-	- 5.6	-	mV/ ° C
R DS(on)	Static Drain-Source On-Resistance	V GS = 10 V, I D = 1.4 A V GS = 6.0 V, I D = 1.3 A V GS = 10 V, I D = 1.4 A, T J = 125 ° C	- - -	319 332 624	425 475 875	m W
I D(on)	On-State Drain Current	V GS = 10 V, V DS = 5 V	4	-	-	A
g FS	Forward Transconductance	V DS = 10 V, I D = 1.4 A	-	4	-	S
DYNAMIC CHARACTERISTICS	DYNAMIC CHARACTERISTICS	DYNAMIC CHARACTERISTICS	DYNAMIC CHARACTERISTICS	DYNAMIC CHARACTERISTICS	DYNAMIC CHARACTERISTICS	DYNAMIC CHARACTERISTICS
C iss	Input Capacitance	V DS = 75 V, V GS = 0 V, f = 1.0 MHz	-	344	-	pF
C oss	Output Capacitance		-	22	-	pF
C rss	Reverse Transfer Capacitance		-	9	-	pF
R g	Gate Resistance		0.1	1.4	3.0	W
SWITCHING CHARACTERISTICS (Note 2)	SWITCHING CHARACTERISTICS (Note 2)	SWITCHING CHARACTERISTICS (Note 2)	SWITCHING CHARACTERISTICS (Note 2)	SWITCHING CHARACTERISTICS (Note 2)	SWITCHING CHARACTERISTICS (Note 2)	SWITCHING CHARACTERISTICS (Note 2)
t d(on)	Turn-On Delay Time	V DD = 75 V, I D = 1 A, GS = 10 V, R GEN = 6 W	-	6.5	13	ns
t r	Turn-On Rise Time	V	-	3.5	7	ns
t d(off)	Turn-Off Delay Time		-	22	33	ns
t f	Turn-Off Fall Time		-	4	8	ns
Q g	Total Gate Charge	V DS = 75 V, I D = 1.4 A,	-	8	11	nC
Q gs	Gate-Source Charge	V GS = 10 V	-	1.5	-	nC
Q gd	Gate-Drain Charge		-	2.3	-	nC
DRAIN - SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS	DRAIN - SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS	DRAIN - SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS	DRAIN - SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS	DRAIN - SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS	DRAIN - SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS	DRAIN - SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I S	Maximum Continuous Drain-Source Diode Forward Current	Maximum Continuous Drain-Source Diode Forward Current	-	-	1.3	A
V SD	Drain-Source Diode Forward Voltage	V GS = 0 V, I S = 1.3 A (Note 2)	-	0.8	1.2	V
t rr	Diode Reverse Recovery Time	I F = 1.4 A, d iF /dt = 300 A/ m s (Note 2)	-	45.8	-	ns
Q rr	Diode Reverse Recovery Charge		-	119	-	nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Symbol	Parameter	Value	Unit
V DSS	Drain - Source Voltage	150	V
V GSS	Gate - Source Voltage	± 20	V
I D	Drain Current - Continuous (Note 1a.) - Pulsed	1.4 8	A
E AS	Single Pulse Avalanche Energy (Note 3)	13.5	mJ
P D	Maximum Power Dissipation (Note 1a.) (Note 1b.)	1.6 0.8	W
T J , T STG	Operating and Storage Junction Temperature Range	- 55 to +150	° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Symbol	Parameter	Value	Unit
R q JA	Thermal Resistance, Junction - to - Ambient (Note 1a.)	78	° C/W
R q JC	Thermal Resistance, Junction - to - Case (Note 1)	30	° C/W

V DSS	R DS(ON) MAX	I D MAX
150 V	425m W @10 V	1.4 A
150 V	475m W @6V	1.4 A

TSOT23 6 -Lead (SUPERSOT t -6) CASE 419BL