FDC2512
MOSFET - N-Channel, POWERTRENCH®
Overview
Part: FDC2512
Type: N-Channel MOSFET
Key Specs:
- Drain-Source Voltage: 150 V
- Continuous Drain Current: 1.4 A
- RDS(ON) @ VGS = 10 V: 425 mΩ
- Gate Charge (Typ): 8 nC
Features:
- 1.4 A, 150 V. RDS(ON) = 425 mΩ @ VGS = 10 V RDS(ON) = 475 mΩ @ VGS = 6 V
- High Performance Trench Technology for Extremely Low RDS(ON)
- Low Gate Charge (8 nC Typ)
- High Power and Current Handling Capability
- Fast Switching Speed
- Pb-Free and Halide Free Device
Applications:
- DC/DC Converter
Package:
- TSOT-23-6 (SUPERSOT™-6)
Features
- 1.4 A, 150 V. RDS(ON) = 425 mΩ @ VGS = 10 V RDS(ON) = 475 mΩ @ VGS = 6 V
- High Performance Trench Technology for Extremely Low RDS(ON)
- Low Gate Charge (8 nC Typ)
- High Power and Current Handling Capability
- Fast Switching Speed
- This is a Pb-Free and Halide Free Device
Pin Configuration
Electrical Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| F CHARAC | TERISTICS | |||||
| BV DSS | Drain-Source Breakdown Voltage | V GS = 0 V, I D = 250 μA | 150 | - | - | V |
| frac{Δ BVDSS}{Δ TJ} | Breakdown Voltage Temperature Coefficient | I D = 250 μA, Referenced to 25°C | - | 147 | - | mV/°C |
| I DSS | Zero Gate Voltage Drain Current | V DS = 120 V, V GS = 0 V | - | - | 1 | μΑ |
| I GSSF | Gate-Body Leakage, Forward | V GS = 20 V, V DS = 0 V | _ | _ | 100 | nA |
| I GSSR | Gate-Body Leakage, Reverse | V GS = -20 V, V DS = 0 V | - | _ | -100 | nA |
| N CHARACT | ERISTICS (Note 2) | |||||
| V GS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250 μ A | 2 | 2.6 | 4 | V |
| frac{Δ VGS(th)}{Δ TJ} | Gate Threshold Voltage Temperature Coefficient | ID = 250 μA, Referenced to 25°C | - | -5.6 | - | mV/°C |
| R DS(on) | Static Drain-Source On-Resistance | VGS = 10 V, ID = 1.4 A VGS = 6.0 V, ID = 1.3 A VGS = 10 V, ID = 1.4 A, TJ = 125°C | - - - | 319 332 624 | 425 475 875 | mΩ |
| ls: | On–State Drain Current | VGS = 10 V, VDS = 5 V | 4 | _ | Α | |
| I D(on) | Forward Transconductance | VQS = 10 V, VDS = 3 V VDS = 10 V, ID = 1.4 A | - | 4 | _ | S |
| 9FS (NAMIC CHA | ARACTERISTICS | VDS = 10 V, ID = 1.47 | ||||
| C iss | Input Capacitance | V DS = 75 V, V GS = 0 V, f = 1.0 MHz | _ | 344 | _ | pF |
| C oss | Output Capacitance | 1 | _ | 22 | _ | pF |
| C rss | Reverse Transfer Capacitance | 1 | _ | 9 | _ | pF |
| R a | Gate Resistance | 0.1 | 1.4 | 3.0 | Ω | |
| VITCHING C | HARACTERISTICS (Note 2) | |||||
| t d(on) | Turn-On Delay Time | V DD = 75 V, I D = 1 A, | _ | 6.5 | 13 | ns |
| t r | Turn–On Rise Time | VGS = 10 V, RGEN = 6 Ω | _ | 3.5 | 7 | ns |
| t d(off) | Turn-Off Delay Time | 1 | - | 22 | 33 | ns |
| t f | Turn-Off Fall Time | 1 | _ | 4 | 8 | ns |
| Qg | Total Gate Charge | V DS = 75 V, I D = 1.4 A, | _ | 8 | 11 | nC |
| Q gs | Gate-Source Charge | V GS = 10 V | _ | 1.5 | - | nC |
| Q gd | Gate-Drain Charge | - | 2.3 | - | nC | |
| RAIN-SOUR | CE DIODE CHARACTERISTICS AND M | AXIMUM RATINGS | ||||
| I S | Maximum Continuous Drain-Source Di | ode Forward Current | - | _ | 1.3 | Α |
| V SD | Drain-Source Diode Forward Voltage | V GS = 0 V, I S = 1.3 A (Note 2) | _ | 0.8 | 1.2 | V |
| t rr | Diode Reverse Recovery Time | I F = 1.4 A, d iF /dt = 300 A/μs (Note 2) | _ | 45.8 | - | ns |
| Qrr | Diode Reverse Recovery Charge | 1 | _ | 119 | - | nC |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES:
- R0JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rθ JC is guaranteed by design while Rθ CA is determined by the user's board design.
a. 78°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 156°C/W when mounted on a minimum pad of 2 oz copper
-
- Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%.
- EAS of 13.5 mJ is based on starting TJ = 25°C, N-ch: L = 3 mH, IAS = 3 A, VDD = 150 V, VGS = 10 V.
TYPICAL CHARACTERISTICS
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage
Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance Variation with Gate-to-Source Voltage
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
TYPICAL ELECTRICAL CHARACTERISTICS (continued)
Figure 11. Transient Thermal Response Curve
NOTE: Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba "onsemi" or its affiliates and/or subsidiaries in the United States and/or other countries.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba "onsemi" or its affiliates and/or subsidiaries in the United States and/or other countries.
0.20 C
Absolute Maximum Ratings
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| V DSS | Drain-Source Voltage | 150 | V |
| V GSS | Gate-Source Voltage | ±20 | V |
| I D | Drain Current -Continuous (Note 1a.) -Pulsed | 1.4 8 | Α |
| E AS | Single Pulse Avalanche Energy (Note 3) | 13.5 | mJ |
| P D | Maximum Power Dissipation (Note 1a.) (Note 1b.) | 1.6 0.8 | W |
| T J , T STG | Operating and Storage Junction Temperature Range | –55 to +150 | °C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Thermal Information
| Symbol | Symbol Parameter | Unit | |
|---|---|---|---|
| Rθ JA | Thermal Resistance, Junction-to-Ambient (Note 1a.) | °C/W | |
| Rθ JC | Thermal Resistance, Junction-to-Case (Note 1) | 30 | °C/W |
| V DSS | R DS(ON) MAX | I D MAX | |
| ------------------ | ------------------------- | -------------------- | |
| 150 V | 425 mΩ @ 10 V | 1.4 A | |
| 475 mΩ @ 6 V |
TSOT23 6-Lead (SUPERSOT™-6) CASE 419BL
MARKING DIAGRAM
252 = Specific Device Code
M = Date Code = Pb-Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
ORDERING INFORMATION
| Device | Package | Shipping † |
|---|---|---|
| FDC2512 | TSOT-23-6 (SUPERSOT™-6) (Pb-Free) | 3000 / Tape & Reel |
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| F CHARAC | TERISTICS | |||||
| BV DSS | Drain-Source Breakdown Voltage | V GS = 0 V, I D = 250 μA | 150 | - | - | V |
| frac{Δ BVDSS}{Δ TJ} | Breakdown Voltage Temperature Coefficient | I D = 250 μA, Referenced to 25°C | - | 147 | - | mV/°C |
| I DSS | Zero Gate Voltage Drain Current | V DS = 120 V, V GS = 0 V | - | - | 1 | μΑ |
| I GSSF | Gate-Body Leakage, Forward | V GS = 20 V, V DS = 0 V | _ | _ | 100 | nA |
| I GSSR | Gate-Body Leakage, Reverse | V GS = -20 V, V DS = 0 V | - | _ | -100 | nA |
| N CHARACT | ERISTICS (Note 2) | |||||
| V GS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250 μ A | 2 | 2.6 | 4 | V |
| frac{Δ VGS(th)}{Δ TJ} | Gate Threshold Voltage Temperature Coefficient | ID = 250 μA, Referenced to 25°C | - | -5.6 | - | mV/°C |
| R DS(on) | Static Drain-Source On-Resistance | VGS = 10 V, ID = 1.4 A VGS = 6.0 V, ID = 1.3 A VGS = 10 V, ID = 1.4 A, TJ = 125°C | - - - | 319 332 624 | 425 475 875 | mΩ |
| ls: | On–State Drain Current | VGS = 10 V, VDS = 5 V | 4 | _ | Α | |
| I D(on) | Forward Transconductance | VQS = 10 V, VDS = 3 V VDS = 10 V, ID = 1.4 A | - | 4 | _ | S |
| 9FS (NAMIC CHA | ARACTERISTICS | VDS = 10 V, ID = 1.47 | ||||
| C iss | Input Capacitance | V DS = 75 V, V GS = 0 V, f = 1.0 MHz | _ | 344 | _ | pF |
| C oss | Output Capacitance | 1 | _ | 22 | _ | pF |
| C rss | Reverse Transfer Capacitance | 1 | _ | 9 | _ | pF |
| R a | Gate Resistance | 0.1 | 1.4 | 3.0 | Ω | |
| VITCHING C | HARACTERISTICS (Note 2) | |||||
| t d(on) | Turn-On Delay Time | V DD = 75 V, I D = 1 A, | _ | 6.5 | 13 | ns |
| t r | Turn–On Rise Time | VGS = 10 V, RGEN = 6 Ω | _ | 3.5 | 7 | ns |
| t d(off) | Turn-Off Delay Time | 1 | - | 22 | 33 | ns |
| t f | Turn-Off Fall Time | 1 | _ | 4 | 8 | ns |
| Qg | Total Gate Charge | V DS = 75 V, I D = 1.4 A, | _ | 8 | 11 | nC |
| Q gs | Gate-Source Charge | V GS = 10 V | _ | 1.5 | - | nC |
| Q gd | Gate-Drain Charge | - | 2.3 | - | nC | |
| RAIN-SOUR | CE DIODE CHARACTERISTICS AND M | AXIMUM RATINGS | ||||
| I S | Maximum Continuous Drain-Source Di | ode Forward Current | - | _ | 1.3 | Α |
| V SD | Drain-Source Diode Forward Voltage | V GS = 0 V, I S = 1.3 A (Note 2) | _ | 0.8 | 1.2 | V |
| t rr | Diode Reverse Recovery Time | I F = 1.4 A, d iF /dt = 300 A/μs (Note 2) | _ | 45.8 | - | ns |
| Qrr | Diode Reverse Recovery Charge | 1 | _ | 119 | - | nC |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES:
- R0JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rθ JC is guaranteed by design while Rθ CA is determined by the user's board design.
a. 78°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 156°C/W when mounted on a minimum pad of 2 oz copper
-
- Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%.
- EAS of 13.5 mJ is based on starting TJ = 25°C, N-ch: L = 3 mH, IAS = 3 A, VDD = 150 V, VGS = 10 V.
TYPICAL CHARACTERISTICS
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage
Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance Variation with Gate-to-Source Voltage
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
TYPICAL ELECTRICAL CHARACTERISTICS (continued)
Figure 11. Transient Thermal Response Curve
NOTE: Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba "onsemi" or its affiliates and/or subsidiaries in the United States and/or other countries.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba "onsemi" or its affiliates and/or subsidiaries in the United States and/or other countries.
0.20 C
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