SSM3K333R,LF(T

Part: SSM3K333R — TOSHIBA

Type: N-Channel MOS Type (U-MOS VII-H) Field-Effect Transistor

Description: 30 V, 6 A N-channel MOSFET with 28 mΩ max ON-resistance at VGS = 10 V, designed for power management and high-speed switching applications.

Operating Conditions:

• Gate-source voltage: ±20 V
• Operating temperature: -55 to 150 °C (storage temperature range)

Absolute Maximum Ratings:

• Max supply voltage: 30 V (Drain-source voltage)
• Max continuous current: 6 A (DC Drain current)
• Max junction/storage temperature: 150 °C (Channel temperature)

Key Specs:

• Drain-source breakdown voltage: 30 V (min) @ ID = 10 mA, VGS = 0 V
• Drain-source ON-resistance: 42 mΩ (max) @ ID = 3.0 A, VGS = 4.5 V
• Drain-source ON-resistance: 28 mΩ (max) @ ID = 5.0 A, VGS = 10 V
• Gate threshold voltage: 1.3 V (min), 2.5 V (max) @ VDS = 10 V, ID = 0.1 mA
• Input capacitance: 436 pF (typ) @ VDS = 15V, VGS = 0 V, f = 1 MHz
• Total gate charge: 3.4 nC (typ) @ VDD = 15V, ID = 6.0 A, VGS = 4.5V
• Turn-on time: 12 ns (typ) @ VDD = 15 V, ID = 3.0 A, VGS = 0 to 4.5 V, RG = 10 Ω
• Turn-off time: 9 ns (typ) @ VDD = 15 V, ID = 3.0 A, VGS = 0 to 4.5 V, RG = 10 Ω

Features:

• Power Management Switch Applications
• High-Speed Switching Applications
• 4.5V drive
• Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V)
• RDS(ON) = 28 mΩ (max) (@VGS = 10 V)

Applications:

• Power Management Switch Applications
• High-Speed Switching Applications

Package:

SSM3K333R,LF(T — KFK Package (3-Pin)

Notes

• Package: KFK (3-pin, surface-mount). This is a small-outline power MOSFET package with exposed drain pad for thermal management.
• Device Type: N-Channel MOS Field-Effect Transistor (U-MOS VII-H), designed for power management and high-speed switching applications.
• Key Specifications: RDS(ON) = 42 mΩ max @ VGS = 4.5 V; 28 mΩ max @ VGS = 10 V. VDS(max) = 30 V.
• Thermal Considerations: Power dissipation and thermal resistance depend on PCB layout (FR4 board, 645 mm² Cu pad recommended per absolute maximum ratings).

Note 3: Pulse test

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ('Handling Precautions'/'Derating Concept and Methods') and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: The channel temperature should not exceed 150 ° C during use.

Note 2: Mounted on a FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm 2 )