SSM3K333R,LF(T
N-Channel MOSFETThe SSM3K333R,LF(T is a n-channel mosfet from Toshiba. View the full SSM3K333R,LF(T datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.
Manufacturer
Toshiba
Category
N-Channel MOSFET
Lifecycle
Production (Last Updated: 4 months ago)
Key Specifications
| Parameter | Value |
|---|---|
| Case/Package | SOT-23-3 |
| Continuous Drain Current (ID) | 6 A |
| Drain to Source Resistance | 28 mΩ |
| Drain-Source Voltage (Vdss) | 30 V |
| Input Capacitance | 436 pF |
| Introduction Date | 2014-03-19 |
| Lifecycle Status | Production (Last Updated: 4 months ago) |
| Max Power Dissipation | 1 W |
| Min Breakdown Voltage | 30 V |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Rds On Max | 28 mΩ |
| RoHS | Compliant |
Overview
Part: SSM3K333R — TOSHIBA
Type: N-Channel MOS Type (U-MOS VII-H) Field-Effect Transistor
Description: 30 V, 6 A N-channel MOSFET with 28 mΩ max ON-resistance at VGS = 10 V, designed for power management and high-speed switching applications.
Operating Conditions:
- Gate-source voltage: ±20 V
- Operating temperature: -55 to 150 °C (storage temperature range)
Absolute Maximum Ratings:
- Max supply voltage: 30 V (Drain-source voltage)
- Max continuous current: 6 A (DC Drain current)
- Max junction/storage temperature: 150 °C (Channel temperature)
Key Specs:
- Drain-source breakdown voltage: 30 V (min) @ ID = 10 mA, VGS = 0 V
- Drain-source ON-resistance: 42 mΩ (max) @ ID = 3.0 A, VGS = 4.5 V
- Drain-source ON-resistance: 28 mΩ (max) @ ID = 5.0 A, VGS = 10 V
- Gate threshold voltage: 1.3 V (min), 2.5 V (max) @ VDS = 10 V, ID = 0.1 mA
- Input capacitance: 436 pF (typ) @ VDS = 15V, VGS = 0 V, f = 1 MHz
- Total gate charge: 3.4 nC (typ) @ VDD = 15V, ID = 6.0 A, VGS = 4.5V
- Turn-on time: 12 ns (typ) @ VDD = 15 V, ID = 3.0 A, VGS = 0 to 4.5 V, RG = 10 Ω
- Turn-off time: 9 ns (typ) @ VDD = 15 V, ID = 3.0 A, VGS = 0 to 4.5 V, RG = 10 Ω
Features:
- Power Management Switch Applications
- High-Speed Switching Applications
- 4.5V drive
- Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V)
- RDS(ON) = 28 mΩ (max) (@VGS = 10 V)
Applications:
- Power Management Switch Applications
- High-Speed Switching Applications
Package:
Pin Configuration
SSM3K333R,LF(T) – KFK Package (3-Pin)
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | Source (S) | I/O | Source terminal |
| 2 | Drain (D) | I/O | Drain terminal |
| 3 | Gate (G) | I/O | Gate terminal |
Notes
- Package: KFK (3-pin, surface-mount)
- Device Type: N-Channel MOSFET (U-MOS VII-H)
- Key Specifications: RDS(ON) = 42 mΩ max @ VGS = 4.5V; 28 mΩ max @ VGS = 10V; VDS(max) = 30V
- Pin diagram shows top view with Gate (3) at top center, Source (1) at bottom left, and Drain (2) at bottom right.
Electrical Characteristics
Note 3: Pulse test
| Characteristic | Symbol | Test Conditions | Min | Typ. | Max | Unit | ||
|---|---|---|---|---|---|---|---|---|
| V (BR) DSS | I D = 10 mA, V GS = 0 V | 30 | ⎯ | ⎯ | V | |||
| Drain-source breakdown voltage | V (BR) DSX | I D = 10 mA, V GS = - 20 V | 15 | ⎯ | ⎯ | |||
| Drain cut-off current | I DSS | V DS = 30 V, V GS = 0 V | ⎯ | ⎯ | 1 | μ A | ||
| Gate leakage current | I GSS | V GS = ± 20 V, V DS = 0 V | ⎯ | ⎯ | ± 0.1 | μ A | ||
| Gate threshold voltage | V th | V DS = 10 V, I D = 0.1 mA | 1.3 | ⎯ | 2.5 | V | ||
| Forward transfer admittance | ⏐ Y fs ⏐ | V DS = 10 V, I D = 5 A | (Note 3) | 12 | 24 | ⎯ | S | |
| R DS (ON) | I D = 3.0 A, V GS = 4.5 V | (Note 3) | ⎯ | 25.7 | 42 | m Ω | ||
| Drain-source ON-resistance | I D = 5.0 A, V GS = 10 V | (Note 3) | ⎯ | 18.7 | 28 | |||
| Input capacitance | C iss | ⎯ | 436 | ⎯ | pF | |||
| Output capacitance | C oss | V DS = 15V, V GS = 0 V, f = 1 | MHz | ⎯ | 77 | ⎯ | ||
| Reverse transfer capacitance | C rss | ⎯ | 28 | ⎯ | ||||
| Total gate charge | Q g | V DD = 15V, I D = 6.0 A | ⎯ | 3.4 | ⎯ | nC | ||
| Gate-source charge | Q gs1 | V = 4.5V | ⎯ | 1.8 | ⎯ | |||
| Gate-drain charge | Q gd | GS | ⎯ | 1.0 | ⎯ | |||
| Switching time | Turn-on time | t on | V DD = 15 V, I D = 3.0 A, | ⎯ | 12 | ⎯ | ns | |
| Turn-off time | t off | V GS = 0 to 4.5 V, R G = 10 Ω | ⎯ | 9 | ⎯ | |||
| Drain-source forward voltage | V DSF | I D = -6.0 A, V GS = 0 V | (Note 3) | ⎯ | -0.85 | -1.2 | V |
Absolute Maximum Ratings
| Characteristic | Characteristic | Symbol | Rating | Unit |
|---|---|---|---|---|
| Drain-source voltage | Drain-source voltage | V DSS | 30 | V |
| Gate-source voltage | Gate-source voltage | V GSS | ± 20 | V |
| DC | I D (Note1) | 6 | A | |
| Pulse | I DP (Note1) | 12 | A | |
| Power dissipation | Power dissipation | P D (Note 2) | 1 | W |
| T ch | 150 | ° C | ||
| Storage temperature range | Storage temperature range | T stg | - 55 to 150 | ° C |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ('Handling Precautions'/'Derating Concept and Methods') and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150 ° C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm 2 )
Ordering Information
| MPN | Package | Temperature Range | Packing |
|---|---|---|---|
| SSM3K333R | null | null | null |
| SSM3K333R,LF(T | null | null | null |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| SSM3K333R | Toshiba | — |
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