DMN7022LFGQ-13
N-Channel Enhancement Mode MOSFETThe DMN7022LFGQ-13 is a n-channel enhancement mode mosfet from Diodes Incorporated. View the full DMN7022LFGQ-13 datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
Diodes Incorporated
Category
N-Channel Enhancement Mode MOSFET
Package
PowerDI3333-8
Overview
Part: DMN7022LFGQ, Diodes Incorporated
Type: N-Channel Enhancement Mode MOSFET
Description: 75V N-Channel Enhancement Mode MOSFET with a maximum R_DS(ON) of 22mΩ at V_GS = 10V and a continuous drain current of 7.8A, qualified to AEC-Q101 for automotive applications.
Operating Conditions:
- Operating temperature: -55 to +150 °C
- Drain-Source Voltage (BV_DSS): 75V
- Gate-Source Voltage (V_GSS): ±20V
Absolute Maximum Ratings:
- Max supply voltage: 75 V (Drain-Source Voltage)
- Max continuous current: 7.8 A (I_D @ T_A = +25°C, V_GS = 10V, Note 5)
- Max junction/storage temperature: +150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BV_DSS): 75 V (min) @ V_GS = 0V, I_D = 250μA
- Zero Gate Voltage Drain Current (I_DSS): 1 μA (max) @ T_J = +25°C, V_DS = 75V, V_GS = 0V
- Gate Threshold Voltage (V_GS(TH)): 1 V (min) to 3 V (max) @ V_DS = V_GS, I_D = 250μA
- Static Drain-Source On-Resistance (R_DS(ON)): 22 mΩ (max) @ V_GS = 10V, I_D = 7.2A
- Static Drain-Source On-Resistance (R_DS(ON)): 28 mΩ (max) @ V_GS = 4.5V, I_D = 6.4A
- Input Capacitance (C_iss): 2737 pF (typ) @ V_DS = 35V, V_GS = 0V, f = 1MHz
- Total Gate Charge (Q_g): 56.5 nC (typ) @ V_GS = 10V, V_DS = 38V, I_D = 7.2A
- Turn-On Delay Time (t_D(ON)): 6.1 ns (typ) @ V_GS = 10V, V_DS = 38V, R_g = 1Ω, I_D = 5.7A
Features:
- 100% Unclamped Inductive Switching
- Low R_DS(ON)
- Small Form Factor Thermally Efficient Package
- Occupies just 33% of the Board Area Occupied by SO-8
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free ('Green' Device)
- AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities
Applications:
- Backlighting
- Power management functions
- DC-DC converters
Package:
- PowerDI® 3333-8
Features
- 100% Unclamped Inductive Switching - Ensures More Reliable and Robust End Application
- Low RDS(ON) - Ensures On-State Losses are Minimized
- Small Form Factor Thermally Efficient Package Enables Higher Density End Products
- Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. 'Green' Device (Note 3)
- The DIODES™ DMN7022LFGQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.
Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
- Backlighting
- Power management functions
- DC-DC converters
DMN7022LFGQ
Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 9) | ||||||
| Drain-Source Breakdown Voltage | BV DSS | 75 | - | - | V | V GS = 0V, I D = 250μA |
| Zero Gate Voltage Drain Current (T J = +25°C ) | I DSS | - | - | 1 | μA | V DS = 75V, V GS = 0V |
| Gate-Source Leakage | I GSS | - | - | ±100 | nA | V GS = ±20V, V DS = 0V |
| ON CHARACTERISTICS (Note 9) | ||||||
| Gate Threshold Voltage | V GS(TH) | 1 | - | 3 | V | V DS = V GS , I D = 250μA |
| Static Drain-Source On-Resistance | R DS(ON) | - - | 14.6 20.5 | 22 28 | mΩ | V GS = 10V, I D = 7.2A V GS = 4.5V, I D = 6.4A |
| Voltage | - | V | V GS = 0V, I S = 3.2A | |||
| Diode Forward | V SD | 0.72 | - | |||
| DYNAMIC CHARACTERISTICS (Note 10) | ||||||
| Input Capacitance | C iss | - | 2737 | - - - | pF | V DS = 35V, V GS = 0V f = 1MHz |
| Output Capacitance | C oss | - | 126 | pF | V DS = 35V, V GS = 0V f = 1MHz | |
| Reverse Transfer Capacitance | C rss | - | 96.1 | pF | V DS = 35V, V GS = 0V f = 1MHz | |
| Gate Resistance | R g | - | 0.89 | - | Ω | V DS = 0V, V GS = 0V, f = 1MHz |
| Total Gate Charge (V GS = 4.5V) | Qg | - | 26.4 | - | nC | V DS = 38V, I D = 7.2A |
| Total Gate Charge (V GS = 10V) | Qg | - | 56.5 | - | nC | V DS = 38V, I D = 7.2A |
| Gate-Source Charge | Qgs | - | 12 | - | nC | V DS = 38V, I D = 7.2A |
| Gate-Drain Charge | Qgd | - | 11.8 | - | nC | V DS = 38V, I D = 7.2A |
| Turn-On Delay Time | t D(ON) | - | 6.1 | - | ns | V GS = 10V, V DS = 38V R g = 1Ω, I D = 5.7A |
| Turn-On Rise Time | t R | - | 5.7 | - | ns | V GS = 10V, V DS = 38V R g = 1Ω, I D = 5.7A |
| Turn-Off Delay Time | t D(OFF) | - | 19.6 | - | ns | V GS = 10V, V DS = 38V R g = 1Ω, I D = 5.7A |
| Turn-Off Fall Time | t F | - | 3.9 | - | ns | V GS = 10V, V DS = 38V R g = 1Ω, I D = 5.7A |
| Body Diode Reverse Recovery Time | t RR | - | 26.2 | - | ns | I F = 5.7A, dI/dt = 100A/μs |
| Body Diode Reverse Recovery Charge | QRR | - | 25.2 | - | nC | I F = 5.7A, dI/dt = 100A/μs |
Notes: 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing.
ADVANCE INFORMATION
ADVANCE INFORMATION
ADVANCE INFORMATION
ADVANCE INFORMATION
Absolute Maximum Ratings
| Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | Drain-Source Voltage | V DSS | 75 | V |
| Gate-Source Voltage | Gate-Source Voltage | V GSS | ±20 | V |
| Continuous Drain Current (Note 5) V GS = 10V | Steady State | +25°C +70°C I D | 7.8 6.2 | A |
| Continuous Drain Current (Note 6) V GS = 10V | Steady State | +25°C +70°C I D | 23 18 | A |
| Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) | Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) | I DM | 56 | A |
| Maximum Continuous Body Diode Forward Current (Note 7) | Maximum Continuous Body Diode Forward Current (Note 7) | I S | 2.1 | A |
| Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%) | Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%) | I SM | 50 | A |
| Avalanche Current, L = 0.1mH (Note 8) | Avalanche Current, L = 0.1mH (Note 8) | I AS | 28.8 | A |
| Avalanche Energy, L = 0.1mH (Note 8) | Avalanche Energy, L = 0.1mH (Note 8) | E AS | 42.2 | mJ |
Thermal Information
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Total Power Dissipation (Note 7) | P D | 0.9 | W |
| Thermal Resistance, Junction to Ambient (Note 7) | R θJA | 125 | °C/W |
| R θJA | 67 | °C/W | |
| Total Power Dissipation (Note 5) | P D | 2 | W |
| Thermal Resistance, Junction to Ambient (Note 5) | R θJA | 62 34 | °C/W |
| Thermal Resistance, Junction to Case (Note 6) | R θJC | 6.9 | |
| Operating and Storage Temperature Range | T J, T STG | -55 to +150 | °C |
Package Information
- Package: PowerDI ® 3333-8
- Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections Indicator: See Diagram
- Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.072 grams (Approximate)
PowerDI3333-8
Bottom View
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| DMN7022LFGQ | Diodes Incorporated | — |
| DMN7022LFGQ-7 | Diodes Incorporated | PowerDI3333-8 |
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