DMN7022LFGQ-7

N-Channel Enhancement Mode MOSFET

The DMN7022LFGQ-7 is a n-channel enhancement mode mosfet from Diodes Incorporated. View the full DMN7022LFGQ-7 datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.

Manufacturer

Diodes Incorporated

Key Specifications

Parameter	Value
Package Weight	0.072 grams (Approximate)
On-Resistance (R DS(ON))	22mΩ (max, at VGS=10V), 28mΩ (max, at VGS=4.5V)
Gate-Source Voltage (V GSS)	±20V
Operating Temperature Range	-55 to +150°C
Drain-Source Voltage (BV DSS)	75V
Continuous Drain Current (I D)	7.8A (at VGS=10V, TA=+25°C)

Overview

Part: DMN7022LFGQ, Diodes Incorporated

Type: N-Channel Enhancement Mode MOSFET

Description: 75V N-Channel Enhancement Mode MOSFET with a maximum R_DS(ON) of 22mΩ at V_GS = 10V and a continuous drain current of 7.8A, qualified to AEC-Q101 for automotive applications.

Operating Conditions:

Operating temperature: -55 to +150 °C
Drain-Source Voltage (BV_DSS): 75V
Gate-Source Voltage (V_GSS): ±20V

Absolute Maximum Ratings:

Max supply voltage: 75 V (Drain-Source Voltage)
Max continuous current: 7.8 A (I_D @ T_A = +25°C, V_GS = 10V, Note 5)
Max junction/storage temperature: +150 °C

Key Specs:

Drain-Source Breakdown Voltage (BV_DSS): 75 V (min) @ V_GS = 0V, I_D = 250μA
Zero Gate Voltage Drain Current (I_DSS): 1 μA (max) @ T_J = +25°C, V_DS = 75V, V_GS = 0V
Gate Threshold Voltage (V_GS(TH)): 1 V (min) to 3 V (max) @ V_DS = V_GS, I_D = 250μA
Static Drain-Source On-Resistance (R_DS(ON)): 22 mΩ (max) @ V_GS = 10V, I_D = 7.2A
Static Drain-Source On-Resistance (R_DS(ON)): 28 mΩ (max) @ V_GS = 4.5V, I_D = 6.4A
Input Capacitance (C_iss): 2737 pF (typ) @ V_DS = 35V, V_GS = 0V, f = 1MHz
Total Gate Charge (Q_g): 56.5 nC (typ) @ V_GS = 10V, V_DS = 38V, I_D = 7.2A
Turn-On Delay Time (t_D(ON)): 6.1 ns (typ) @ V_GS = 10V, V_DS = 38V, R_g = 1Ω, I_D = 5.7A

Features:

100% Unclamped Inductive Switching
Low R_DS(ON)
Small Form Factor Thermally Efficient Package
Occupies just 33% of the Board Area Occupied by SO-8
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free ('Green' Device)
AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities

Applications:

Backlighting
Power management functions
DC-DC converters

Package:

PowerDI® 3333-8

Features

100% Unclamped Inductive Switching - Ensures More Reliable and Robust End Application
Low RDS(ON) - Ensures On-State Losses are Minimized
Small Form Factor Thermally Efficient Package Enables Higher Density End Products
Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. 'Green' Device (Note 3)
The DIODES™ DMN7022LFGQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.

https://www.diodes.com/quality/product-definitions/

Applications

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:

Backlighting
Power management functions
DC-DC converters

DMN7022LFGQ

Pin Configuration

DMN7022LFGQ-7 Pinout

Package: PowerDI3333-8

Pin Number	Pin Name	Type	Description
1	D	P	Drain
2	D	P	Drain
3	D	P	Drain
4	S	P	Source
5	S	P	Source
6	G	I	Gate
7	S	P	Source
8	D	P	Drain

Notes

PowerDI3333-8 package: 8-pin power package with multiple drain and source connections for thermal and current distribution.
Drain pins (1, 2, 3, 8): Multiple drain connections provide low thermal resistance and improved current handling.
Source pins (4, 5, 7): Multiple source connections for current distribution.
Gate pin (6): Single gate control pin.
Exposed pad: The package includes an exposed drain pad on the bottom for enhanced thermal performance (see thermal resistance specifications in datasheet).
This pinout applies specifically to DMN7022LFGQ-7 (2,000 qty tape & reel variant); DMN7022LFGQ-13 uses the same PowerDI3333-8 package with identical pinout.

Electrical Characteristics

Characteristic	Symbol	Min	Typ	Max	Unit	Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage	BV DSS	75	-	-	V	V GS = 0V, I D = 250μA
Zero Gate Voltage Drain Current (T J = +25°C )	I DSS	-	-	1	μA	V DS = 75V, V GS = 0V
Gate-Source Leakage	I GSS	-	-	±100	nA	V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage	V GS(TH)	1	-	3	V	V DS = V GS , I D = 250μA
Static Drain-Source On-Resistance	R DS(ON)	- -	14.6 20.5	22 28	mΩ	V GS = 10V, I D = 7.2A V GS = 4.5V, I D = 6.4A
Voltage		-			V	V GS = 0V, I S = 3.2A
Diode Forward	V SD		0.72	-
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance	C iss	-	2737	- - -	pF	V DS = 35V, V GS = 0V f = 1MHz
Output Capacitance	C oss	-	126		pF	V DS = 35V, V GS = 0V f = 1MHz
Reverse Transfer Capacitance	C rss	-	96.1		pF	V DS = 35V, V GS = 0V f = 1MHz
Gate Resistance	R g	-	0.89	-	Ω	V DS = 0V, V GS = 0V, f = 1MHz
Total Gate Charge (V GS = 4.5V)	Qg	-	26.4	-	nC	V DS = 38V, I D = 7.2A
Total Gate Charge (V GS = 10V)	Qg	-	56.5	-	nC	V DS = 38V, I D = 7.2A
Gate-Source Charge	Qgs	-	12	-	nC	V DS = 38V, I D = 7.2A
Gate-Drain Charge	Qgd	-	11.8	-	nC	V DS = 38V, I D = 7.2A
Turn-On Delay Time	t D(ON)	-	6.1	-	ns	V GS = 10V, V DS = 38V R g = 1Ω, I D = 5.7A
Turn-On Rise Time	t R	-	5.7	-	ns	V GS = 10V, V DS = 38V R g = 1Ω, I D = 5.7A
Turn-Off Delay Time	t D(OFF)	-	19.6	-	ns	V GS = 10V, V DS = 38V R g = 1Ω, I D = 5.7A
Turn-Off Fall Time	t F	-	3.9	-	ns	V GS = 10V, V DS = 38V R g = 1Ω, I D = 5.7A
Body Diode Reverse Recovery Time	t RR	-	26.2	-	ns	I F = 5.7A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge	QRR	-	25.2	-	nC	I F = 5.7A, dI/dt = 100A/μs

Notes: 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing.

ADVANCE INFORMATION

Absolute Maximum Ratings

Characteristic	Characteristic	Symbol	Value	Unit
Drain-Source Voltage	Drain-Source Voltage	V DSS	75	V
Gate-Source Voltage	Gate-Source Voltage	V GSS	±20	V
Continuous Drain Current (Note 5) V GS = 10V	Steady State	+25°C +70°C I D	7.8 6.2	A
Continuous Drain Current (Note 6) V GS = 10V	Steady State	+25°C +70°C I D	23 18	A
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)	Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)	I DM	56	A
Maximum Continuous Body Diode Forward Current (Note 7)	Maximum Continuous Body Diode Forward Current (Note 7)	I S	2.1	A
Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%)	Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%)	I SM	50	A
Avalanche Current, L = 0.1mH (Note 8)	Avalanche Current, L = 0.1mH (Note 8)	I AS	28.8	A
Avalanche Energy, L = 0.1mH (Note 8)	Avalanche Energy, L = 0.1mH (Note 8)	E AS	42.2	mJ

Thermal Information

Characteristic	Symbol	Value	Unit
Total Power Dissipation (Note 7)	P D	0.9	W
Thermal Resistance, Junction to Ambient (Note 7)	R θJA	125	°C/W
	R θJA	67	°C/W
Total Power Dissipation (Note 5)	P D	2	W
Thermal Resistance, Junction to Ambient (Note 5)	R θJA	62 34	°C/W
Thermal Resistance, Junction to Case (Note 6)	R θJC	6.9
Operating and Storage Temperature Range	T J, T STG	-55 to +150	°C

Package Information

Package: PowerDI ® 3333-8
Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)

PowerDI3333-8

Bottom View

Ordering Information

Part Number	Package	Packing
DMN7022LFGQ-7	PowerDI3333-8	2,000 pcs, Tape & Reel
DMN7022LFGQ-13	PowerDI3333-8	3,000 pcs, Tape & Reel

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
DMN7022LFGQ	Diodes Incorporated	—
DMN7022LFGQ-13	Diodes Incorporated	PowerDI3333-8

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