MOSFETs Datasheets
146 MOSFETs datasheets read into specs, pinouts and ratings. Parts from Infineon Technologies, Diodes and onsemi.
MOSFETs datasheets, page 3
146 parts · page 3 of 5. Most used first, then by part number.
HSBB6115
Huashuo
-60V, -26A P-channel trench power MOSFET with 20 mΩ typical RDS(ON), low gate charge and 100% EAS guaranteed, intended for synchronous buck converter applications.
IPP110N20N3
Infineon Technologies
OptiMOS 3 200V N-channel normal-level power MOSFET with 11 mΩ max on-resistance and 88 A continuous drain current, ideal for high-frequency switching and synchronous rectification
IPP110N20N3GXKSA1
Infineon Technologies
N-channel OptiMOS 3 Power MOSFET with very low on-resistance, high operating temperature, ideal for high-frequency switching and synchronous rectification.
IPT015N10N5
Infineon Technologies
MOSFETs IFX FET >80 - 100V
IRF3205
International Rectifier
55V, 110A N-channel HEXFET power MOSFET with 8.0mΩ max on-resistance, fast switching, 175°C rating and full avalanche rating
IRF3205L
International Rectifier
55V, 110A N-channel HEXFET power MOSFET with 8.0 mOhm max on-resistance, fast switching and fully avalanche rated; IRF3205L is the through-hole TO-262 version.
IRF3205LPBF
International Rectifier
55V, 110A HEXFET N-channel power MOSFET with 8.0 mOhm max on-resistance, 175 C operating temperature, fast switching and full avalanche rating (through-hole TO-262 version)
IRF3205SPBF
International Rectifier
Advanced HEXFET Power MOSFET with ultra-low on-resistance, dynamic dv/dt rating, and 175°C operating temperature, suitable for a wide variety of efficient and reliable power applications.
IRF540N
Infineon Technologies
IRF540NPBF
Infineon Technologies
MOSFET N-CH 100V 33A TO220AB
IRF540NT
Infineon Technologies
IRFML8244
Infineon Technologies
N-Channel HEXFET Power MOSFET designed for load/system switching applications, featuring low on-resistance.
IRFML9244
Infineon Technologies
30V HEXFET power MOSFET in a Micro3 (SOT-23) package with low RDS(on), intended for load/system switch applications
IRFP260N
International Rectifier
200V, 50A HEXFET N-channel power MOSFET with 0.04 ohm RDS(on), fast switching and fully avalanche rated in a TO-247AC package
IRFP260NPBF
International Rectifier
Fifth Generation HEXFET Power MOSFET from International Rectifier with extremely low on-resistance, fast switching speed, and ruggedized design for a wide variety of applications.
IRFP4368
Infineon Technologies
75V, 350A (silicon limited) HEXFET N-channel power MOSFET with 1.46 mΩ typical RDS(on), designed for synchronous rectification, UPS and high-frequency hard-switched circuits
IRFP4368PBF
Infineon Technologies
High-efficiency N-channel HEXFET Power MOSFET designed for synchronous rectification, UPS, and high-speed power switching applications.
IRFZ44N
Infineon Technologies
Advanced HEXFET® Power MOSFET with ultra-low on-resistance, fast switching, and rugged design, suitable for a wide variety of applications.
IRFZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO220AB
IRLML0030
Infineon Technologies
30V HEXFET N-channel power MOSFET in Micro3 (SOT-23) package with low RDS(on) (<29 mΩ at 4.5V VGS), intended for load/system switch applications
IRLML0040
Infineon Technologies
30V N-channel logic-level HEXFET power MOSFET in a Micro3 (SOT-23) package for load/system switch applications, with RDS(on) below 29 mOhm at VGS = 4.5V.
IRLML0060
Infineon Technologies
30V logic-level N-channel HEXFET power MOSFET in SOT-23 with low RDS(on) (max 29 mΩ at 4.5V), intended for load/system switching
IRLML0100
Infineon Technologies
30V HEXFET N-channel power MOSFET in Micro3 (SOT-23) package with low RDS(on) (<29 mΩ at 4.5V) for load/system switch applications
IRLML2030
Infineon Technologies
30V N-channel HEXFET power MOSFET in Micro3 (SOT-23) package with low RDS(on) (<29 mOhm at 4.5V VGS), intended for load/system switch applications.
IRLML2060
Infineon Technologies
30V N-channel HEXFET power MOSFET with low RDS(on) (<29 mΩ at VGS=4.5V) in an industry-standard SOT-23 package, intended for load/system switch applications
IRLML2244
Infineon Technologies
30V N-channel HEXFET power MOSFET in a Micro3 (SOT-23) package with low RDS(on) (<29 mOhm at 4.5V VGS) for load/system switch applications
IRLML2246
Infineon Technologies
30V N-channel HEXFET power MOSFET in SOT-23 with low RDS(on) for load/system switch applications
IRLML2402
Infineon Technologies
30V N-channel HEXFET power MOSFET in Micro3 (SOT-23) with low RDS(on) (<29 mOhm at 4.5V), intended for load/system switch applications
IRLML2502
Infineon Technologies
30V N-channel HEXFET power MOSFET in a Micro3 (SOT-23) package with low RDS(on) (<29 mΩ), intended for load/system switching.
IRLML2803
International Rectifier
30V N-channel HEXFET power MOSFET in SOT-23 package with low RDS(on) (<29 mOhm at 4.5V VGS) for load/system switch applications