IRFP260N
N-Channel Power MOSFETThe IRFP260N is a n-channel power mosfet from International Rectifier. View the full IRFP260N datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official IRFP260N datasheet (PDF) — the source this page was extracted from.
Manufacturer
International RectifierCategory
MOSFETsIRFP260N Key Specifications
| Parameter | Value |
|---|---|
| Total Gate Charge (Qg) | 234 nC max |
| On-Resistance (RDS(On)) | 0.04 Ω max (VGS = 10V, ID = 28A) |
| Input Capacitance (Ciss) | 4057 pF typ |
| Pulsed Drain Current (IDM) | 200A |
| Gate-To-Source Voltage (VGS) | ±20V |
| Drain-To-Source Voltage (VDSS) | 200V |
| Forward Transconductance (Gfs) | 27 S min |
| Operating Junction Temperature | -55°C to +175°C |
| Power Dissipation (PD @ 25°C) | 300W |
| Body Diode Forward Voltage (VSD) | 1.3V max |
| Gate Threshold Voltage (VGS(Th)) | 2.0V to 4.0V |
| Single Pulse Avalanche Energy (EAS) | 560 mJ |
| Continuous Drain Current (ID @ 25°C) | 50A |
| Continuous Drain Current (ID @ 100°C) | 35A |
| Thermal Resistance Junction-To-Case (RθJC) | 0.50 °C/W max |
| Thermal Resistance Junction-To-Ambient (RθJA) | 40 °C/W max |
IRFP260N Overview
Part: IRFPE30 — International Rectifier
Type: HEXFET® Power MOSFET
Description: A Fifth Generation HEXFET Power MOSFET featuring a 200V drain-to-source voltage, 0.04 Ω on-resistance, and 50 A continuous drain current, designed for high efficiency and reliability in various applications.
Operating Conditions:
- Gate-to-Source Voltage: ±20 V
- Operating temperature: -55 to +175 °C
- Drain-to-Source Voltage: 200 V (max)
Absolute Maximum Ratings:
- Max Gate-to-Source Voltage: ±20 V
- Max continuous drain current (T_C = 25°C): 50 A
- Max junction/storage temperature: -55 to +175 °C
Key Specs:
- Drain-to-Source Breakdown Voltage (V(BR)DSS): 200 V (V_GS = 0V, I_D = 250μA)
- Static Drain-to-Source On-Resistance (R_DS(on)): 0.04 Ω (V_GS = 10V, I_D = 28A)
- Gate Threshold Voltage (V_GS(th)): 2.0 V (min) to 4.0 V (max) (V_DS = V_GS, I_D = 250μA)
- Drain-to-Source Leakage Current (I_DSS): 25 μA (max) (V_DS = 200V, V_GS = 0V)
- Total Gate Charge (Q_g): 234 nC (max) (I_D = 28A)
- Input Capacitance (C_iss): 4057 pF (typ) (V_GS = 0V, V_DS = 25V, ƒ = 1.0MHz)
- Continuous Source Current (Body Diode) (I_S): 50 A (max)
- Diode Forward Voltage (V_SD): 1.3 V (max) (T_J = 25°C, I_S = 28A, V_GS = 0V)
Features:
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Ease of Paralleling
- Simple Drive Requirements
- Lead-Free
Applications:
Package:
- TO-247
IRFP260N Electrical Characteristics
| Parameter | Min. | Typ. | Max. | Units | Conditions | |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-to-Source Breakdown Voltage | 200 | --- | --- | V | V GS = 0V, I D = 250μA |
| ∆ V (BR)DSS / ∆ T J | Breakdown Voltage Temp. Coefficient | --- | 0.26 | --- | V/°C | Reference to 25°C, I D = 1mA |
| R DS(on) | Static Drain-to-Source On-Resistance | --- | --- | 0.04 | Ω | V GS = 10V, I D = 28A /G32 /G132 |
| V GS(th) | Gate Threshold Voltage | 2.0 | --- | 4.0 | V | V DS = V GS , I D = 250μA |
| g fs | Forward Transconductance | 27 | --- | --- | S | V DS = 50V, I D = 28A /G132 |
| I DSS | Drain-to-Source Leakage Current | --- | --- | 25 | μA | V DS = 200V, V GS = 0V |
| I DSS | Drain-to-Source Leakage Current | --- | --- | 250 | μA | V DS = 160V, V GS = 0V, T J = 150°C |
| I GSS | Gate-to-Source Forward Leakage | --- | --- | 100 | nA | V GS = 20V |
| I GSS | Gate-to-Source Reverse Leakage | --- | --- | -100 | nA | V GS = -20V |
| Q g | Total Gate Charge | --- | --- | 234 | nC | I D = 28A |
| Q gs | Gate-to-Source Charge | --- | --- | 38 | nC | V DS = 160V |
| Q gd | Gate-to-Drain ("Miller") Charge | --- | --- | 110 | nC | V GS = 10V /G132 |
| t d(on) | Turn-On Delay Time | --- | 17 | --- | ns | V DD = 100V |
| t r | Rise Time | --- | 60 | --- | ns | I D = 28A |
| t d(off) | Turn-Off Delay Time | --- | 55 | --- | ns | R G = 1.8 Ω |
| t f | Fall Time | --- | 48 | --- | ns | V GS = 10V /G32 /G132 |
| L D | Internal Drain Inductance | --- | 5.0 | --- | nH | Between lead, 6mm (0.25in.) G |
| L S | Internal Source Inductance | --- | 13 | --- | nH | from package and center of die contact |
| C iss | Input Capacitance | --- | 4057 | --- | pF | V GS = 0V |
| C oss | Output Capacitance | --- | 603 | --- | pF | V DS = 25V |
| C rss | Reverse Transfer Capacitance | --- | 161 | --- | pF | ƒ = 1.0MHz |
IRFP260N Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| I D @T C = 25°C | Continuous Drain Current, V GS @10V | 50 | A |
| I D @T C = 100°C | Continuous Drain Current, V GS @10V | 35 | A |
| I DM | Pulsed Drain Current /G129 | 200 | A |
| P D @T C = 25°C | Power Dissipation | 300 | W |
| Linear Derating Factor | 2.0 | W/°C | |
| V GS | Gate-to-Source Voltage | ±20 | V |
| E AS | Single Pulse Avalanche Energy /G130 | 560 | mJ |
| I AR | Avalanche Current /G129 | 50 | A |
| E AR | Repetitive Avalanche Energy /G129 | 30 | mJ |
| dv/dt | Peak Diode Recovery dv/dt /G131 | 10 | V/ns |
| T J | Operating Junction and | -55 to +175 | °C |
| T STG | Storage Temperature Range | °C | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | °C | |
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
IRFP260N Thermal Information
| Parameter | Typ. | Max. | Units | |
|---|---|---|---|---|
| R θ JC | Junction-to-Case | --- | 0.50 | |
| R θ CS | Case-to-Sink, Flat, Greased Surface | 0.24 | --- | °C/W |
| R θ JA | Junction-to-Ambient | --- | 40 |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| IRFP260NPBF | International Rectifier | TO-247 |
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- 2N7002 – Nexperia, N-channel Trench MOSFET
- ISC030N10NM6ATMA1 – Infineon Technologies, N-Channel Power MOSFET
All MOSFETs datasheetsAll International Rectifier datasheets (13)
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
Ask your AI agent about the IRFP260N
Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.
claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp
Then ask: "Can the IRFP260N run from my 12 V rail? Check it against the datasheet limits."
Create a free account $2 of usage every month, no card needed.