IRFP260N

The IRFP260N is an electronic component from International Rectifier. View the full IRFP260N datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

International Rectifier

Overview

Part: IRFP260NPbF from International Rectifier

Type: HEXFET Power MOSFET

Key Specs:

Continuous Drain Current (ID @ TC = 25°C): 50 A
Drain-to-Source Breakdown Voltage (V(BR)DSS): 200 V
Static Drain-to-Source On-Resistance (RDS(on)): 0.04 Ω
Operating Junction Temperature: -55 to +175 °C
Power Dissipation (PD @TC = 25°C): 300 W
Peak Diode Recovery dv/dt: 10 V/ns

Features:

Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead-Free
Extremely low on-resistance per silicon area
Ruggedized device design

Applications:

null

Package:

TO-247: dimensions null

Electrical Characteristics

	Parameter	Min.		Typ. Max.	Units	Conditions
V(BR)DSS	Drain-to-Source Breakdown Voltage	200	–––	–––	V	VGS = 0V, ID = 250μA
∆V(BR)DSS/∆TJ	Breakdown Voltage Temp. Coefficient	–––	0.26	–––	V/°C	Reference to 25°C, ID = 1mA
RDS(on)	Static Drain-to-Source On-Resistance	–––	–––	0.04	Ω	VGS = 10V, ID = 28A
VGS(th)	Gate Threshold Voltage	2.0	–––	4.0	V	VDS = VGS, ID = 250μA
gfs	Forward Transconductance	27	–––	–––	S	VDS = 50V, ID = 28A
IDSS	Drain-to-Source Leakage Current	–––	–––	25	μA	VDS = 200V, VGS = 0V
		–––	–––	250		VDS = 160V, VGS = 0V, TJ = 150°C
	Gate-to-Source Forward Leakage	–––	–––	100		VGS = 20V
IGSS	Gate-to-Source Reverse Leakage	–––	–––	-100	nA	VGS = -20V
Qg	Total Gate Charge	–––	–––	234		ID = 28A
Qgs	Gate-to-Source Charge	–––	–––	38	nC	VDS = 160V
Qgd	Gate-to-Drain ("Miller") Charge	–––	–––	110		VGS = 10V
td(on)	Turn-On Delay Time	–––	17	–––		VDD = 100V
tr	Rise Time	–––	60	–––		ID = 28A
td(off)	Turn-Off Delay Time	–––	55	–––	ns	RG = 1.8Ω
tf	Fall Time	–––	48	–––		VGS = 10V
LD	Internal Drain Inductance	–––	5.0	–––		Between lead, D 6mm (0.25in.)
LS	Internal Source Inductance	–––	13	–––	nH	G from package and center of die contact S
Ciss	Input Capacitance	–––	4057	–––		VGS = 0V
Coss	Output Capacitance	–––	603	–––	pF	VDS = 25V
Crss	Reverse Transfer Capacitance	–––	161	–––		ƒ = 1.0MHz

Absolute Maximum Ratings

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	50	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	35	A
IDM	Pulsed Drain Current ①	200	A
PD @TC = 25°C	Power Dissipation	300	W
	Linear Derating Factor	2.0	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy ②	560	mJ
IAR	Avalanche Current ①	50	A
EAR	Repetitive Avalanche Energy ①	30	mJ
dv/dt	Peak Diode Recovery dv/dt ③	10	V/ns
TJ	Operating Junction and	-55 to +175	°C
TSTG	Storage Temperature Range		°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torque, 6-32 or M3 screw	10 lbf•in (1.1N•m)

Thermal Information

Parameter	Typ.	Max.	Units
RθJC Junction-to-Case	–––	0.50	°C/W
RθCS Case-to-Sink, Flat, Greased Surface	0.24	–––	°C/W
RθJA Junction-to-Ambient	–––	40	°C/W

IRFP260NPbF HEXFET® Power MOSFET

PD - 95010A

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
IRFP260NPBF	International Rectifier	—

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