IRFP260NPBF
Power MOSFETThe IRFP260NPBF is a power mosfet from International Rectifier. View the full IRFP260NPBF datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Manufacturer
International Rectifier
Category
Power MOSFET
Package
TO-247
Key Specifications
| Parameter | Value |
|---|---|
| Total Gate Charge (Qg) | 234 nC |
| Peak Diode Recovery Dv/Dt | 10 V/ns |
| Gate-To-Source Voltage (VGS) | ±20V |
| Power Dissipation (PD) @ 25°C | 300W |
| Continuous Drain Current (ID) @ 25°C | 50A |
| Drain-To-Source Breakdown Voltage (VDSS) | 200V |
| Static Drain-To-Source On-Resistance (RDS(On)) | 0.04 Ω |
| Operating Junction And Storage Temperature Range | -55 to +175 °C |
Overview
Part: IRFPE30 — International Rectifier
Type: HEXFET® Power MOSFET
Description: A Fifth Generation HEXFET Power MOSFET featuring a 200V drain-to-source voltage, 0.04 Ω on-resistance, and 50 A continuous drain current, designed for high efficiency and reliability in various applications.
Operating Conditions:
- Gate-to-Source Voltage: ±20 V
- Operating temperature: -55 to +175 °C
- Drain-to-Source Voltage: 200 V (max)
Absolute Maximum Ratings:
- Max Gate-to-Source Voltage: ±20 V
- Max continuous drain current (T_C = 25°C): 50 A
- Max junction/storage temperature: -55 to +175 °C
Key Specs:
- Drain-to-Source Breakdown Voltage (V(BR)DSS): 200 V (V_GS = 0V, I_D = 250μA)
- Static Drain-to-Source On-Resistance (R_DS(on)): 0.04 Ω (V_GS = 10V, I_D = 28A)
- Gate Threshold Voltage (V_GS(th)): 2.0 V (min) to 4.0 V (max) (V_DS = V_GS, I_D = 250μA)
- Drain-to-Source Leakage Current (I_DSS): 25 μA (max) (V_DS = 200V, V_GS = 0V)
- Total Gate Charge (Q_g): 234 nC (max) (I_D = 28A)
- Input Capacitance (C_iss): 4057 pF (typ) (V_GS = 0V, V_DS = 25V, ƒ = 1.0MHz)
- Continuous Source Current (Body Diode) (I_S): 50 A (max)
- Diode Forward Voltage (V_SD): 1.3 V (max) (T_J = 25°C, I_S = 28A, V_GS = 0V)
Features:
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Ease of Paralleling
- Simple Drive Requirements
- Lead-Free
Applications:
Package:
- TO-247
Electrical Characteristics
| Parameter | Min. | Typ. | Max. | Units | Conditions | |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-to-Source Breakdown Voltage | 200 | --- | --- | V | V GS = 0V, I D = 250μA |
| ∆ V (BR)DSS / ∆ T J | Breakdown Voltage Temp. Coefficient | --- | 0.26 | --- | V/°C | Reference to 25°C, I D = 1mA |
| R DS(on) | Static Drain-to-Source On-Resistance | --- | --- | 0.04 | Ω | V GS = 10V, I D = 28A /G32 /G132 |
| V GS(th) | Gate Threshold Voltage | 2.0 | --- | 4.0 | V | V DS = V GS , I D = 250μA |
| g fs | Forward Transconductance | 27 | --- | --- | S | V DS = 50V, I D = 28A /G132 |
| I DSS | Drain-to-Source Leakage Current | --- | --- | 25 | μA | V DS = 200V, V GS = 0V |
| I DSS | Drain-to-Source Leakage Current | --- | --- | 250 | μA | V DS = 160V, V GS = 0V, T J = 150°C |
| I GSS | Gate-to-Source Forward Leakage | --- | --- | 100 | nA | V GS = 20V |
| I GSS | Gate-to-Source Reverse Leakage | --- | --- | -100 | nA | V GS = -20V |
| Q g | Total Gate Charge | --- | --- | 234 | nC | I D = 28A |
| Q gs | Gate-to-Source Charge | --- | --- | 38 | nC | V DS = 160V |
| Q gd | Gate-to-Drain ("Miller") Charge | --- | --- | 110 | nC | V GS = 10V /G132 |
| t d(on) | Turn-On Delay Time | --- | 17 | --- | ns | V DD = 100V |
| t r | Rise Time | --- | 60 | --- | ns | I D = 28A |
| t d(off) | Turn-Off Delay Time | --- | 55 | --- | ns | R G = 1.8 Ω |
| t f | Fall Time | --- | 48 | --- | ns | V GS = 10V /G32 /G132 |
| L D | Internal Drain Inductance | --- | 5.0 | --- | nH | Between lead, 6mm (0.25in.) G |
| L S | Internal Source Inductance | --- | 13 | --- | nH | from package and center of die contact |
| C iss | Input Capacitance | --- | 4057 | --- | pF | V GS = 0V |
| C oss | Output Capacitance | --- | 603 | --- | pF | V DS = 25V |
| C rss | Reverse Transfer Capacitance | --- | 161 | --- | pF | ƒ = 1.0MHz |
Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| I D @T C = 25°C | Continuous Drain Current, V GS @10V | 50 | A |
| I D @T C = 100°C | Continuous Drain Current, V GS @10V | 35 | A |
| I DM | Pulsed Drain Current /G129 | 200 | A |
| P D @T C = 25°C | Power Dissipation | 300 | W |
| Linear Derating Factor | 2.0 | W/°C | |
| V GS | Gate-to-Source Voltage | ±20 | V |
| E AS | Single Pulse Avalanche Energy /G130 | 560 | mJ |
| I AR | Avalanche Current /G129 | 50 | A |
| E AR | Repetitive Avalanche Energy /G129 | 30 | mJ |
| dv/dt | Peak Diode Recovery dv/dt /G131 | 10 | V/ns |
| T J | Operating Junction and | -55 to +175 | °C |
| T STG | Storage Temperature Range | °C | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | °C | |
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
Thermal Information
| Parameter | Typ. | Max. | Units | |
|---|---|---|---|---|
| R θ JC | Junction-to-Case | --- | 0.50 | |
| R θ CS | Case-to-Sink, Flat, Greased Surface | 0.24 | --- | °C/W |
| R θ JA | Junction-to-Ambient | --- | 40 |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| IRFP260N | International Rectifier | — |
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