IRFP260NPBF

Power MOSFET

The IRFP260NPBF is a power mosfet from International Rectifier. View the full IRFP260NPBF datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

IRFP260NPBF shares its datasheet with IRFP260N, whose page lists every part number it covers.

Official IRFP260NPBF datasheet (PDF) — the source this page was extracted from.

Manufacturer

International Rectifier

IRFP260NPBF Key Specifications

Parameter	Value
Total Gate Charge (Qg)	234 nC
Peak Diode Recovery Dv/Dt	10 V/ns
Gate-To-Source Voltage (VGS)	±20V
Power Dissipation (PD) @ 25°C	300W
Continuous Drain Current (ID) @ 25°C	50A
Drain-To-Source Breakdown Voltage (VDSS)	200V
Static Drain-To-Source On-Resistance (RDS(On))	0.04 Ω
Operating Junction And Storage Temperature Range	-55 to +175 °C

IRFP260NPBF Overview

Part: IRFPE30 — International Rectifier

Type: HEXFET® Power MOSFET

Description: A Fifth Generation HEXFET Power MOSFET featuring a 200V drain-to-source voltage, 0.04 Ω on-resistance, and 50 A continuous drain current, designed for high efficiency and reliability in various applications.

Operating Conditions:

Gate-to-Source Voltage: ±20 V
Operating temperature: -55 to +175 °C
Drain-to-Source Voltage: 200 V (max)

Absolute Maximum Ratings:

Max Gate-to-Source Voltage: ±20 V
Max continuous drain current (T_C = 25°C): 50 A
Max junction/storage temperature: -55 to +175 °C

Key Specs:

Drain-to-Source Breakdown Voltage (V(BR)DSS): 200 V (V_GS = 0V, I_D = 250μA)
Static Drain-to-Source On-Resistance (R_DS(on)): 0.04 Ω (V_GS = 10V, I_D = 28A)
Gate Threshold Voltage (V_GS(th)): 2.0 V (min) to 4.0 V (max) (V_DS = V_GS, I_D = 250μA)
Drain-to-Source Leakage Current (I_DSS): 25 μA (max) (V_DS = 200V, V_GS = 0V)
Total Gate Charge (Q_g): 234 nC (max) (I_D = 28A)
Input Capacitance (C_iss): 4057 pF (typ) (V_GS = 0V, V_DS = 25V, ƒ = 1.0MHz)
Continuous Source Current (Body Diode) (I_S): 50 A (max)
Diode Forward Voltage (V_SD): 1.3 V (max) (T_J = 25°C, I_S = 28A, V_GS = 0V)

Features:

Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead-Free

Applications:

Package:

TO-247

IRFP260NPBF Electrical Characteristics

	Parameter	Min.	Typ.	Max.	Units	Conditions
V (BR)DSS	Drain-to-Source Breakdown Voltage	200	---	---	V	V GS = 0V, I D = 250μA
∆ V (BR)DSS / ∆ T J	Breakdown Voltage Temp. Coefficient	---	0.26	---	V/°C	Reference to 25°C, I D = 1mA
R DS(on)	Static Drain-to-Source On-Resistance	---	---	0.04	Ω	V GS = 10V, I D = 28A /G32 /G132
V GS(th)	Gate Threshold Voltage	2.0	---	4.0	V	V DS = V GS , I D = 250μA
g fs	Forward Transconductance	27	---	---	S	V DS = 50V, I D = 28A /G132
I DSS	Drain-to-Source Leakage Current	---	---	25	μA	V DS = 200V, V GS = 0V
I DSS	Drain-to-Source Leakage Current	---	---	250	μA	V DS = 160V, V GS = 0V, T J = 150°C
I GSS	Gate-to-Source Forward Leakage	---	---	100	nA	V GS = 20V
I GSS	Gate-to-Source Reverse Leakage	---	---	-100	nA	V GS = -20V
Q g	Total Gate Charge	---	---	234	nC	I D = 28A
Q gs	Gate-to-Source Charge	---	---	38	nC	V DS = 160V
Q gd	Gate-to-Drain ("Miller") Charge	---	---	110	nC	V GS = 10V /G132
t d(on)	Turn-On Delay Time	---	17	---	ns	V DD = 100V
t r	Rise Time	---	60	---	ns	I D = 28A
t d(off)	Turn-Off Delay Time	---	55	---	ns	R G = 1.8 Ω
t f	Fall Time	---	48	---	ns	V GS = 10V /G32 /G132
L D	Internal Drain Inductance	---	5.0	---	nH	Between lead, 6mm (0.25in.) G
L S	Internal Source Inductance	---	13	---	nH	from package and center of die contact
C iss	Input Capacitance	---	4057	---	pF	V GS = 0V
C oss	Output Capacitance	---	603	---	pF	V DS = 25V
C rss	Reverse Transfer Capacitance	---	161	---	pF	ƒ = 1.0MHz

IRFP260NPBF Absolute Maximum Ratings

	Parameter	Max.	Units
I D @T C = 25°C	Continuous Drain Current, V GS @10V	50	A
I D @T C = 100°C	Continuous Drain Current, V GS @10V	35	A
I DM	Pulsed Drain Current /G129	200	A
P D @T C = 25°C	Power Dissipation	300	W
	Linear Derating Factor	2.0	W/°C
V GS	Gate-to-Source Voltage	±20	V
E AS	Single Pulse Avalanche Energy /G130	560	mJ
I AR	Avalanche Current /G129	50	A
E AR	Repetitive Avalanche Energy /G129	30	mJ
dv/dt	Peak Diode Recovery dv/dt /G131	10	V/ns
T J	Operating Junction and	-55 to +175	°C
T STG	Storage Temperature Range		°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

IRFP260NPBF Thermal Information

	Parameter	Typ.	Max.	Units
R θ JC	Junction-to-Case	---	0.50
R θ CS	Case-to-Sink, Flat, Greased Surface	0.24	---	°C/W
R θ JA	Junction-to-Ambient	---	40

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
IRFP260N	International Rectifier	—

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All MOSFETs datasheets All International Rectifier datasheets (13)

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