International Rectifier Datasheets
13 International Rectifier datasheets read into specs, pinouts and ratings, including MOSFETs.
International Rectifier parts by category
- MOSFETs (12)
International Rectifier datasheets
13 parts · page 1 of 1. Most used first, then by part number.
IR2110STRPBF
International Rectifier
High voltage (500V), high speed power MOSFET and IGBT driver with independent high and low side referenced output channels, 2A source/sink, 3.3V logic compatible
IRF3205
International Rectifier
55V, 110A N-channel HEXFET power MOSFET with 8.0mΩ max on-resistance, fast switching, 175°C rating and full avalanche rating
IRF3205L
International Rectifier
55V, 110A N-channel HEXFET power MOSFET with 8.0 mOhm max on-resistance, fast switching and fully avalanche rated; IRF3205L is the through-hole TO-262 version.
IRF3205LPBF
International Rectifier
55V, 110A HEXFET N-channel power MOSFET with 8.0 mOhm max on-resistance, 175 C operating temperature, fast switching and full avalanche rating (through-hole TO-262 version)
IRF3205SPBF
International Rectifier
Advanced HEXFET Power MOSFET with ultra-low on-resistance, dynamic dv/dt rating, and 175°C operating temperature, suitable for a wide variety of efficient and reliable power applications.
IRFP260N
International Rectifier
200V, 50A HEXFET N-channel power MOSFET with 0.04 ohm RDS(on), fast switching and fully avalanche rated in a TO-247AC package
IRFP260NPBF
International Rectifier
Fifth Generation HEXFET Power MOSFET from International Rectifier with extremely low on-resistance, fast switching speed, and ruggedized design for a wide variety of applications.
IRLML2803
International Rectifier
30V N-channel HEXFET power MOSFET in SOT-23 package with low RDS(on) (<29 mOhm at 4.5V VGS) for load/system switch applications
IRLML2803PBF
International Rectifier
IRLR3110Z
International Rectifier / Infineon Technologies
100V, 14mΩ N-channel logic-level HEXFET power MOSFET with 175°C junction rating, fast switching and repetitive avalanche capability for industrial applications
IRLR3110ZPBF
International Rectifier / Infineon Technologies
100V, 14mOhm N-channel logic-level HEXFET power MOSFET with 175C junction temperature, fast switching and repetitive avalanche capability for industrial applications
IRLR3110ZTRPBF
International Rectifier / Infineon Technologies
N-Channel HEXFET Power MOSFET designed for industrial applications, featuring ultra-low on-resistance, 175°C operating temperature, fast switching, and improved repetitive avalanche rating.
IRLU3110ZPBF
International Rectifier / Infineon Technologies
100V, 14mOhm N-channel HEXFET power MOSFET with 63A continuous drain current and 175°C junction operating temperature, designed for industrial applications