IR2110STRPBF

Part: IR2110S / IR2113S (IR2110STRPBF) — Infineon (International Rectifier)

Type: High and Low Side Gate Driver (MOSFET/IGBT)

Description: 500 V (IR2110) / 600 V (IR2113) high and low side gate driver with 2 A source/sink output current, 10–20 V gate drive supply range, and 120 ns / 94 ns typical turn-on/turn-off delays.

Operating Conditions:

• Gate drive supply (VCC): 10–20 V
• Logic supply (VDD): VSS + 3 V to VSS + 20 V
• High side floating offset (VS): up to 500 V (IR2110) / 600 V (IR2113)
• Operating temperature (ambient): -40 to 125 °C

Absolute Maximum Ratings:

• High side floating supply voltage (VB): 525 V (IR2110) / 625 V (IR2113)
• Low side fixed supply voltage (VCC): 25 V
• Logic supply voltage (VDD): VSS + 25 V
• Allowable offset supply voltage transient (dVs/dt): 50 V/ns
• Max junction temperature: 150 °C
• Storage temperature: -55 to 150 °C
• Lead temperature (soldering, 10 s): 300 °C

Key Specs:

• Output short circuit pulsed current: IO+ 2.0 A min (2.5 A typ); IO- 2.0 A min (2.5 A typ) (PW ≤ 10 μs)
• Turn-on / turn-off propagation delay: 120 ns / 94 ns typ (150 ns / 125 ns max), VBIAS = 15 V, CL = 1000 pF, TA = 25 °C
• Shutdown propagation delay: 110 ns typ, 140 ns max
• Rise / fall time: 25 ns / 17 ns typ (35 ns / 25 ns max)
• Delay matching: 10 ns max (IR2110), 20 ns max (IR2113)
• Logic input thresholds: VIH 9.5 V min, VIL 6.0 V max
• Quiescent current (VIN = 0 V or VDD): IQBS 125 μA typ, IQCC 180 μA typ, IQDD 15 μA typ
• UVLO: VBS rising 8.6 V typ, falling 8.2 V typ; VCC rising 8.5 V typ, falling 8.2 V typ
• Offset supply leakage: 50 μA max
• Thermal resistance RθJA (16-lead SOIC): 100 °C/W; power dissipation 1.25 W at TA ≤ 25 °C

Features:

• Floating channel designed for bootstrap operation, fully operational to +500 V or +600 V
• Tolerant to negative transient voltage, dV/dt immune
• Undervoltage lockout for both channels
• CMOS Schmitt-triggered inputs with pull-down
• 3.3 V logic compatible; separate logic supply range from 3.3 V to 20 V
• Logic and power ground ±5 V offset
• Cycle-by-cycle edge-triggered shutdown logic
• Outputs in phase with inputs
• Matched propagation delay for both channels

Applications:

• Driving N-channel power MOSFETs and IGBTs in high side and low side configurations
• High frequency power conversion

Package:

• 16-Lead SOIC (IR2110S / IR2113S)
• 14-Lead PDIP (IR2110 / IR2113)

VBIAS (V CC , V BS , V DD ) = 15V, C L = 1000 pF, T A = 25 ° C and VSS = COM unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3.

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 28 through 35.

The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The V S and V SS offset ratings are tested with all supplies biased at 15V differential. Typical ratings at other bias conditions are shown in figures 36 and 37.

Note 1: Logic operational for V S of -4 to +500V. Logic state held for V S of -4V to -V BS . (Please refer to the Design Tip DT97-3 for more details).

Note 2: When VDD < 5V, the minimum VSS offset is limited to -V DD.