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IR2110STRPBF

The IR2110STRPBF is an electronic component. View the full IR2110STRPBF datasheet below including electrical characteristics, absolute maximum ratings.

Overview

Part: IR2110/IR2113

Type: High voltage, high speed power MOSFET and IGBT drivers

Description: High voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels, fully operational to +500V or +600V, featuring 2A/2A output current and 120 ns typical turn-on delay.

Operating Conditions:

  • Supply voltage (VCC, VB): 10–20 V
  • Logic supply voltage (VDD): VSS + 3V to VSS + 20V
  • Operating temperature: -40 to 125 °C
  • High side floating supply offset voltage (VS): Note 1 to 500V (IR2110), Note 1 to 600V (IR2113)

Absolute Maximum Ratings:

  • Max high side floating supply voltage (VB): 525 V (IR2110), 625 V (IR2113)
  • Max low side fixed supply voltage (VCC): 25 V
  • Max logic supply voltage (VDD): VSS + 25 V
  • Max junction temperature: 150 °C
  • Max storage temperature: -55 to 150 °C
  • Allowable offset supply voltage transient (dVs/dt): 50 V/ns

Key Specs:

  • Turn-on propagation delay (ton): 120 ns (typ) at VS = 0V
  • Turn-off propagation delay (toff): 94 ns (typ) at VS = 500V/600V
  • Delay matching, HS & LS (IR2110): 10 ns (max)
  • Output high short circuit pulsed current (IO+): 2.0 A (min)
  • Output low short circuit pulsed current (IO-): 2.0 A (min)
  • Quiescent VBS supply current (IQBS): 125 μA (typ) at VIN = 0V or VDD
  • Quiescent VCC supply current (IQCC): 180 μA (typ) at VIN = 0V or VDD
  • Logic '1' input voltage (VIH): 9.5 V (min)

Features:

  • Gate drive supply range from 10 to 20V
  • Floating channel designed for bootstrap operation, fully operational to +500V or +600V
  • Tolerant to negative transient voltage, dV/dt immune
  • Undervoltage lockout for both channels
  • CMOS Schmitt-triggered inputs with pull-down
  • 3.3V logic compatible, separate logic supply range from 3.3V to 20V
  • Cycle by cycle edge-triggered shutdown logic
  • Outputs in phase with inputs
  • Matched propagation delay for both channels

Package:

  • 14-Lead PDIP
  • 16-Lead SOIC

Electrical Characteristics

VBIAS (V CC , V BS , V DD ) = 15V, C L = 1000 pF, T A = 25 ° C and VSS = COM unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3.

SymbolDefinitionFigureMin.Typ.Max.UnitsTest Conditions
t onTurn-on propagation delay7-120150nsV S = 0V
t offTurn-off propagation delay8-94125nsV S = 500V/600V
t sdShutdown propagation delay9-110140nsV S = 500V/600V
t rTurn-on rise time10-2535ns
t fTurn-off fall time11-1725ns
MTDelay matching, HS & LS (IR2110)---10ns
MTturn-on/off (IR2113)---20ns

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 28 through 35.

SymbolDefinitionDefinitionMin.Max.Units
V BHigh side floating supply voltage (IR2110)High side floating supply voltage (IR2110)-0.3525V
V B(IR2113)(IR2113)-0.3625V
V SHigh side floating supply offset voltageHigh side floating supply offset voltageV B - 25V B + 0.3V
V HOHigh side floating output voltageHigh side floating output voltageV S - 0.3V B + 0.3V
V CCLow side fixed supply voltageLow side fixed supply voltage-0.325V
V LOLow side output voltageLow side output voltage-0.3V CC + 0.3V
V DDLogic supply voltageLogic supply voltage-0.3V SS + 25V
V SSLogic supply offset voltageLogic supply offset voltageV CC - 25V CC + 0.3V
V INLogic input voltage (HIN, LIN & SD)Logic input voltage (HIN, LIN & SD)V SS - 0.3V DD + 0.3V
dV s /dtAllowable offset supply voltage transient (figure 2)Allowable offset supply voltage transient (figure 2)-50V/ns
P DPackage power dissipation@TA ≤ +25 ° C(14 lead DIP)-1.6W
P D(16 lead SOIC)-1.25W
R THJAThermal resistance, junction to ambient(14 lead DIP)-75° C/W
R THJA(16 lead SOIC)-100° C/W
T JJunction temperatureJunction temperature-150° C
T SStorage temperatureStorage temperature-55150° C
T LLead temperature (soldering, 10 seconds)Lead temperature (soldering, 10 seconds)-300° C

Recommended Operating Conditions

The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The V S and V SS offset ratings are tested with all supplies biased at 15V differential. Typical ratings at other bias conditions are shown in figures 36 and 37.

SymbolDefinitionDefinitionMin.Max.Units
V BHigh side floating supply absolute voltageHigh side floating supply absolute voltageV S + 10V S + 20V
V SHigh side floating supply offset voltage(IR2110)Note 1500V
V S(IR2113)Note 1600V
V HOHigh side floating output voltageHigh side floating output voltageV SV BV
V CCLow side fixed supply voltageLow side fixed supply voltage1020V
V LOLow side output voltageLow side output voltage0VCCV
V DDLogic supply voltageLogic supply voltageV SS + 3V SS + 20V
V SSLogic supply offset voltageLogic supply offset voltage-5 (Note 2)5V
V INLogic input voltage (HIN, LIN & SD)Logic input voltage (HIN, LIN & SD)V SSV DDV
T AAmbient temperatureAmbient temperature-40125° C

Note 1: Logic operational for V S of -4 to +500V. Logic state held for V S of -4V to -V BS . (Please refer to the Design Tip DT97-3 for more details).

Note 2: When VDD < 5V, the minimum VSS offset is limited to -V DD.

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
IR2110Infineon Technologies
IR2110-1Infineon Technologies
IR2110-1PBFInfineon Technologies
IR2110-2Infineon Technologies
IR2110-2PBFInfineon Technologies
IR2110PBFInfineon Technologies
IR2110SInfineon Technologies
IR2110SPBFInfineon Technologies
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