IR2110S

Part: IR2110 / IR2113 — Infineon (International Rectifier)

Type: High and Low Side Gate Driver (MOSFET/IGBT)

Description: High-voltage, high-speed power MOSFET and IGBT driver with independent high and low side outputs, 500 V (IR2110) or 600 V (IR2113) max offset, 2 A source/sink output current and 10–20 V gate drive supply.

Operating Conditions:

• Gate drive supply (VCC): 10–20 V; VB = VS + 10 to VS + 20 V
• Logic supply (VDD): VSS + 3 to VSS + 20 V
• Operating (ambient) temperature: -40 to 125 °C
• High side floating offset VS: up to 500 V (IR2110) or 600 V (IR2113)

Absolute Maximum Ratings:

• High side floating supply voltage VB: 525 V (IR2110), 625 V (IR2113)
• Low side fixed supply voltage VCC: 25 V
• Logic supply voltage VDD: VSS + 25 V
• Allowable offset supply voltage transient dVs/dt: 50 V/ns
• Junction temperature: 150 °C
• Storage temperature: -55 to 150 °C
• Lead temperature (soldering, 10 s): 300 °C

Key Specs:

• Output short circuit pulsed current (PW ≤ 10 μs, VBIAS = 15 V, 25 °C): IO+ 2.0 A min / 2.5 A typ; IO- 2.0 A min / 2.5 A typ
• Turn-on propagation delay: 120 ns typ, 150 ns max (CL = 1000 pF, VBIAS = 15 V)
• Turn-off propagation delay: 94 ns typ, 125 ns max
• Rise/fall time: 25 ns / 17 ns typ (CL = 1000 pF)
• Delay matching: 10 ns max (IR2110), 20 ns max (IR2113)
• Logic input thresholds: VIH 9.5 V min, VIL 6.0 V max
• Quiescent current: IQBS 125 μA typ, IQCC 180 μA typ, IQDD 15 μA typ
• Undervoltage lockout: VBS+ 8.6 V typ, VCC+ 8.5 V typ
• Offset supply leakage: 50 μA max (VB = VS = 500 V/600 V)

Features:

• Floating channel designed for bootstrap operation, fully operational to +500 V or +600 V
• Tolerant to negative transient voltage, dV/dt immune
• Undervoltage lockout for both channels
• CMOS Schmitt-triggered inputs with pull-down
• 3.3 V logic compatible; separate logic supply range from 3.3 V to 20 V
• Logic and power ground ±5 V offset
• Cycle by cycle edge-triggered shutdown logic
• Outputs in phase with inputs
• Matched propagation delay for both channels

Applications:

• Half-bridge and high/low side power MOSFET or IGBT gate driving
• High frequency switching power stages

Package:

• 14-lead PDIP (IR2110PbF, IR2113PbF)
• 16-lead SOIC (IR2110SPbF, IR2113SPbF)

VBIAS (V CC , V BS , V DD ) = 15V, C L = 1000 pF, T A = 25 ° C and VSS = COM unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3.

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 28 through 35.

The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The V S and V SS offset ratings are tested with all supplies biased at 15V differential. Typical ratings at other bias conditions are shown in figures 36 and 37.

Note 1: Logic operational for V S of -4 to +500V. Logic state held for V S of -4V to -V BS . (Please refer to the Design Tip DT97-3 for more details).

Note 2: When VDD < 5V, the minimum VSS offset is limited to -V DD.