IRF3205L

Part: IRF3205SPbF, IRF3205LPbF from International Rectifier

Type: HEXFET Power MOSFET

Key Specs:

• Continuous Drain Current (ID @ 25°C): 110 A
• Drain-to-Source Breakdown Voltage (V(BR)DSS): 55 V
• Static Drain-to-Source On-Resistance (RDS(on)): 8.0 mΩ
• Operating Junction and Storage Temperature Range: -55 to +175 °C
• Power Dissipation (PD @ 25°C): 200 W
• Peak Diode Recovery dv/dt: 5.0 V/ns

Features:

• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead-Free

Applications:

• High current applications

Package:

• D2Pak: Surface mount, highest power capability, lowest on-resistance, dissipates up to 2.0W
• IRF3205L (through-hole version): Low-profile applications

	Parameter	Min.		Typ. Max.	Units	Conditions
V(BR)DSS	Drain-to-Source Breakdown Voltage	55	ñññ	ñññ	V	VGS = 0V, ID = 250μA
∆V(BR)DSS/∆TJ	Breakdown Voltage Temp. Coefficient	ñññ	0.057	ñññ	V/°C	Reference to 25°C, ID = 1mA
RDS(on)	Static Drain-to-Source On-Resistance	ñññ	ñññ	8.0	mΩ	VGS = 10V, ID = 62A
VGS(th)	Gate Threshold Voltage	2.0	ñññ	4.0	V	VDS = VGS, ID = 250μA
gfs	Forward Transconductance	44	ñññ	ñññ	S	VDS = 25V, ID = 62A
	Drain-to-Source Leakage Current	ñññ	ñññ	25	μA	VDS = 55V, VGS = 0V
IDSS		ñññ	ñññ	250		VDS = 44V, VGS = 0V, TJ = 150°C
	Gate-to-Source Forward Leakage	ñññ	ñññ	100		VGS = 20V
IGSS	Gate-to-Source Reverse Leakage	ñññ	ñññ	-100	nA	VGS = -20V
Qg	Total Gate Charge	ñññ	ñññ	146		ID = 62A
Qgs	Gate-to-Source Charge	ñññ	ñññ	35	nC	VDS = 44V
Qgd	Gate-to-Drain ("Miller") Charge	ñññ	ñññ	54		VGS = 10V, See Fig. 6 and 13
td(on)	Turn-On Delay Time	ñññ	14	ñññ		VDD = 28V
tr	Rise Time	ñññ	101	ñññ		ID = 62A
td(off)	Turn-Off Delay Time	ñññ	50	ñññ	ns	RG = 4.5Ω
tf	Fall Time	ñññ	65	ñññ		VGS = 10V, See Fig. 10
	Internal Drain Inductance	ñññ	4.5	ñññ		Between lead, D
LD						6mm (0.25in.)
	Internal Source Inductance	ñññ	7.5	ñññ	nH	from package G
LS						and center of die contact S
Ciss	Input Capacitance	ñññ	3247	ñññ		VGS = 0V
Coss	Output Capacitance	ñññ	781	ñññ		VDS = 25V
Crss	Reverse Transfer Capacitance	ñññ	211	ñññ	pF	É = 1.0MHz, See Fig. 5
EAS	Single Pulse Avalanche Energy			ñññ 1050 264	mJ	IAS = 62A, L = 138μH

Source-Drain Ratings and Characteristics

	Parameter	Min.		Typ. Max.	Units	Conditions
IS	Continuous Source Current					D MOSFET symbol
	(Body Diode)	ñññ ñññ	110	A	showing the
ISM	Pulsed Source Current (Body Diode)		ñññ ñññ	390		integral reverse G p-n junction diode. S
VSD	Diode Forward Voltage	ñññ	ñññ	1.3	V	TJ = 25°C, IS = 62A, VGS = 0V
trr	Reverse Recovery Time	ñññ	69	104	ns	TJ = 25°C, IF = 62A
Qrr	Reverse Recovery Charge	ñññ	143	215	nC	di/dt = 100A/μs
ton	Forward Turn-On Time	Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

-

• • Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )

• Starting TJ = 25°C, L = 138μH RG = 25Ω, IAS = 62A. (See Figure 12)

• ISD ^≤ 62Adi/d≤ 207A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
• Pulse width ≤ 400μs; duty cycle ≤ 2%.
• Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
• This is a typical value at device destruction and represents operation outside rated limits.
• This is a calculated value limited to TJ = 175°C.

* When mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

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Dimensions are shown in millimeters (inches)

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	110 ⑤
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	80	A
IDM	Pulsed Drain Current ①	390
PD @TC = 25°C	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/°C
VGS	Gate-to-Source Voltage	± 20	V
IAR	Avalanche Current①	62	A
EAR	Repetitive Avalanche Energy①	20	mJ
dv/dt	Peak Diode Recovery dv/dt ③	5.0	V/ns
TJ	Operating Junction and	-55 to + 175
TSTG	Storage Temperature Range		°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 screw	10 lbf•in (1.1N•m)

	Parameter	Typ.	Max.	Units
RθJC	Junction-to-Case	---	0.75	°C/W
RθJA	Junction-to-Ambient (PCB mounted, steady-state)*	---	40

IRF3205SPbF IRF3205LPbF HEXFETÆ Power MOSFET

PD - 95106