IRF3205
Manufacturer
International Rectifier
Overview
Part: IRF3205SPbF, IRF3205LPbF from International Rectifier
Type: HEXFET Power MOSFET
Key Specs:
- Continuous Drain Current (TC = 25°C, VGS @ 10V): 110 A
- Power Dissipation (TC = 25°C): 200 W
- Operating Junction Temperature Range: -55 to +175 °C
- Junction-to-Case Thermal Resistance: 0.75 °C/W
- Peak Diode Recovery dv/dt: 5.0 V/ns
Features:
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
- Ruggedized device design
Applications:
- High current applications
Package:
- D2Pak: Surface mount power package, highest power capability, lowest on-resistance in surface mount, dissipates up to 2.0W. Dimensions not provided in text.
- TO-262: Through-hole version (IRF3205LPbF) for low-profile applications. Dimensions not provided in text.
Electrical Characteristics
| Parameter | Typ. | Max. | Units | |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| I D @ T C = 25°C | Continuous Drain Current, V GS @ 10V | 110 ⑤ | A | |
| I D @ T C = 100°C | Continuous Drain Current, V GS @ 10V | 80 | A | |
| I DM | Pulsed Drain Current ① | 390 | A | |
| P D @ T C = 25°C | Power Dissipation | 200 | W | |
| Linear Derating Factor | 1.3 | W/°C | ||
| V GS | Gate-to-Source Voltage | ± 20 | V | |
| I AR | Avalanche Current ① | 62 | A | |
| E AR | Repetitive Avalanche Energy ① | 20 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt ③ | 5.0 | V/ns | |
| T J | Operating Junction and | -55 to + 175 | °C | |
| T STG | Storage Temperature Range | |||
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | °C | ||
| Mounting torque, 6-32 or M3 screw | 10 lbf•in (1.1N•m) | |||
| Thermal Resistance | ||||
| R θJC | Junction-to-Case | --- | 0.75 | °C/W |
| R θJA | Junction-to-Ambient (PCB mounted, steady-state)* | --- | 40 | °C/W |
Source-Drain Ratings and Characteristics
| Parameter | Min. | Typ. Max. | Units | Conditions | ||
|---|---|---|---|---|---|---|
| IS | Continuous Source Current | D MOSFET symbol | ||||
| (Body Diode) | ñññ ñññ | 110 | A | showing the | ||
| ISM | Pulsed Source Current (Body Diode) | ñññ ñññ | 390 | integral reverse G p-n junction diode. S | ||
| VSD | Diode Forward Voltage | ñññ | ñññ | 1.3 | V | TJ = 25°C, IS = 62A, VGS = 0V |
| trr | Reverse Recovery Time | ñññ | 69 | 104 | ns | TJ = 25°C, IF = 62A |
| Qrr | Reverse Recovery Charge | ñññ | 143 | 215 | nC | di/dt = 100A/μs |
| ton | Forward Turn-On Time | Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
-
-
- Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
-
Starting TJ = 25°C, L = 138μH RG = 25Ω, IAS = 62A. (See Figure 12)
- ISD ≤ 62Adi/d≤ 207A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
- Pulse width ≤ 400μs; duty cycle ≤ 2%.
- Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
- This is a typical value at device destruction and represents operation outside rated limits.
- This is a calculated value limited to TJ = 175°C.
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
-- -
--- -
- "# $
- --
- -%&
-"# '&--()*
A
-.( &-
-.( &%&
--! %& -
-"# $& '
!
- - - - -
1
- /'0'-
--
Dimensions are shown in millimeters (inches)
Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 110 | |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 80 | A |
| IDM | Pulsed Drain Current ① | 390 | |
| PD @TC = 25°C | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.3 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| IAR | Avalanche Current ① | 62 | A |
| EAR | Repetitive Avalanche Energy ① | 20 | mJ |
| dv/dt | Peak Diode Recovery dv/dt ③ | 5.0 | V/ns |
| TJ | Operating Junction and | -55 to + 175 | |
| TSTG | Storage Temperature Range | °C | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
Thermal Information
| Parameter | Typ. | Max. | Units | |
|---|---|---|---|---|
| RθJC | Junction-to-Case | --- | 0.75 | °C/W |
| RθJA | Junction-to-Ambient (PCB mounted, steady-state)* | --- | 40 | °C/W |
IRF3205SPbF IRF3205LPbF HEXFETÆ Power MOSFET PD - 95106
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| IRF3205L | International Rectifier | — |
| IRF3205LPBF | International Rectifier | — |
| IRF3205SPBF | International Rectifier | — |
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
Get structured datasheet data via API
Get started free