IRF3205
N-Channel HEXFET Power MOSFETThe IRF3205 is a n-channel hexfet power mosfet from International Rectifier. View the full IRF3205 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official IRF3205 datasheet (PDF) — the source this page was extracted from.
Manufacturer
International RectifierCategory
MOSFETsIRF3205 Key Specifications
| Parameter | Value |
|---|---|
| Total Gate Charge (Qg) | 146nC max |
| Avalanche Current (IAR) | 62A |
| Input Capacitance (Ciss) | 3247pF typ |
| Peak Diode Recovery Dv/Dt | 5.0V/ns |
| Pulsed Drain Current (IDM) | 390A |
| Gate-To-Source Voltage (VGS) | ±20V |
| Drain-To-Source Voltage (VDSS) | 55V |
| Operating Junction Temperature | -55°C to +175°C |
| Static On-Resistance (RDS(On)) | 8.0mΩ max (VGS=10V, ID=62A) |
| Gate Threshold Voltage (VGS(Th)) | 2V to 4.0V |
| Power Dissipation (PD @ TC=25°C) | 200W |
| Continuous Drain Current (ID @ TC=25°C) | 110A |
| Continuous Drain Current (ID @ TC=100°C) | 80A |
| Junction-To-Case Thermal Resistance (RθJC) | 0.75°C/W max |
| Junction-To-Ambient Thermal Resistance (RθJA) | 40°C/W max |
IRF3205 Overview
Part: IRF3205SPbF IRF3205LPbF — International Rectifier
Type: HEXFET Power MOSFET
Description: Advanced HEXFET Power MOSFETs featuring ultra-low on-resistance, fast switching, and ruggedized design for efficient and reliable operation in a wide variety of applications.
Operating Conditions:
- Gate-to-Source Voltage: -20 to +20 V
- Operating temperature: -55 to +175 °C
- Max continuous drain current: 110 A (at T_C = 25 °C)
Absolute Maximum Ratings:
- Max supply voltage (Drain-to-Source): 55 V
- Max continuous current (Drain): 110 A (at T_C = 25 °C, V_GS @ 10V)
- Max junction/storage temperature: 175 °C
Key Specs:
- Drain-to-Source Breakdown Voltage: 55 V (V_GS = 0V, I_D = 250 μA)
- Static Drain-to-Source On-Resistance: 8.0 mΩ (V_GS = 10V, I_D = 62A)
- Gate Threshold Voltage: 2 V min, 4.0 V max (V_DS = V_GS, I_D = 250 μA)
- Total Gate Charge: 146 nC max (I_D = 62A)
- Input Capacitance: 3247 pF typ (V_GS = 0V, V_DS = 25V, f = 1.0MHz)
- Turn-On Delay Time: 14 ns typ (V_DD = 28V, I_D = 62A, R_G = 4.5Ω, V_GS = 10V)
- Peak Diode Recovery dv/dt: 5.0 V/ns
- Junction-to-Case Thermal Resistance: 0.75 °C/W max
Features:
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175 C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Package:
- D2Pak (surface mount)
- TO-262 (through-hole)
IRF3205 Electrical Characteristics
| Parameter | Min. | Typ. | Max. | Units | Conditions | |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-to-Source Breakdown Voltage | 55 | V | V GS = 0V, I D = 250 A | ||
| ∆ V (BR)DSS / ∆ T J | Breakdown Voltage Temp. Coefficient | 0.057 | V/ C | Reference to 25 C, I D = 1mA | ||
| R DS(on) | Static Drain-to-Source On-Resistance | 8.0 | m Ω | V GS = 10V, I D = 62A /G32 /G132 | ||
| V GS(th) | Gate Threshold Voltage | 2 | 4.0 | V | V DS = V GS , I D = 250 A | |
| g fs | Forward Transconductance | 44 | S | V DS = 25V, I D = 62A /G132 | ||
| I DSS | Drain-to-Source Leakage Current | 25 | A | V DS = 55V, V GS = 0V | ||
| I DSS | Drain-to-Source Leakage Current | 250 | A | V DS = 44V, V GS = 0V, T J = 150 C | ||
| I GSS | Gate-to-Source Forward Leakage | 100 | nA | V GS = 20V | ||
| I GSS | Gate-to-Source Reverse Leakage | -100 | nA | V GS = -20V | ||
| Q g | Total Gate Charge | 146 | nC | I D = 62A | ||
| Q gs | Gate-to-Source Charge | 35 | nC | V DS = 44V | ||
| Q gd | Gate-to-Drain ("Miller") Charge | 54 | nC | V GS = 10V, See Fig. 6 and 13 | ||
| t d(on) | Turn-On Delay Time | 14 | ns | V DD = 28V | ||
| t r | Rise Time | 101 | ns | I D = 62A | ||
| t d(off) | Turn-Off Delay Time | 50 | ns | R G = 4.5 Ω | ||
| t f | Fall Time | 65 | ns | V GS = 10V, See Fig. 10 /G132 | ||
| L D | Internal Drain Inductance | 4.5 | nH | Between lead, 6mm (0.25in.) G | ||
| L S | Internal Source Inductance | 7.5 | nH | from package and center of die contact | ||
| C iss | Input Capacitance | 3247 | V GS = 0V | |||
| C oss | Output Capacitance | 781 | V DS = 25V | |||
| C rss | Reverse Transfer Capacitance | 211 | pF | = 1.0MHz, See Fig. 5 | ||
| E AS | Single Pulse Avalanche Energy /G130 | 1050 /G134 | 264 /G135 | mJ | I AS = 62A, L = 138 μ H |
IRF3205 Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| I D @T C = 25 C | Continuous Drain Current, V GS @10V | 110 /G133 | A |
| I D @T C = 100 C | Continuous Drain Current, V GS @10V | 80 | A |
| I DM | Pulsed Drain Current /G129 | 390 | A |
| P D @T C = 25 C | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.3 | W/ C | |
| V GS | Gate-to-Source Voltage | - 20 | V |
| I AR | Avalanche Current /G129 | 62 | A |
| E AR | Repetitive Avalanche Energy /G129 | 20 | mJ |
| dv/dt | Peak Diode Recovery dv/dt /G131 | 5.0 | V/ns |
| T J T STG | Operating Junction and | -55 to + 175 | C |
| T J T STG | Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | C |
| Mounting torque, 6-32 or M3 srew | 10 lbf in (1.1N m) |
IRF3205 Thermal Information
| Parameter | Typ. | Max. | Units | |
|---|---|---|---|---|
| R θ JC | Junction-to-Case | 0.75 | C/W | |
| R θ JA | Junction-to-Ambient (PCB mounted, steady-state)* | 40 |
RDS(on) = 8.0m Ω
ID = 110A /G133
D 2 Pak IRF3205SPbF
TO-262 IRF3205LPbF
IRF3205 Package Information
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| IRF3205L | International Rectifier | TO-262 |
| IRF3205LPBF | International Rectifier | TO-262 |
| IRF3205SPBF | International Rectifier | D2Pak |
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- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- SI2337DS – Vishay Intertechnology, P-Channel Power MOSFET
All MOSFETs datasheetsAll International Rectifier datasheets (13)
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