IRF3205SPBF

Power MOSFET

The IRF3205SPBF is a power mosfet from International Rectifier. View the full IRF3205SPBF datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

IRF3205SPBF shares its datasheet with IRF3205, whose page lists every part number it covers.

Official IRF3205SPBF datasheet (PDF) — the source this page was extracted from.

Manufacturer

International Rectifier

IRF3205SPBF Key Specifications

Parameter	Value
Total Gate Charge (Q G)	146nC
Peak Diode Recovery Dv/Dt	5.0 V/ns
Gate-To-Source Voltage (V GS)	-20V to 20V
Power Dissipation (P D) @ 25°C	200W
Operating Junction Temperature (T J)	-55°C to 175°C
Continuous Drain Current (I D) @ 25°C	110A
Continuous Drain Current (I D) @ 100°C	80A
Drain-To-Source Breakdown Voltage (V DSS)	55V
Static Drain-To-Source On-Resistance (R DS(On))	8.0mΩ

IRF3205SPBF Overview

Part: IRF3205SPbF IRF3205LPbF — International Rectifier

Type: HEXFET Power MOSFET

Description: Advanced HEXFET Power MOSFETs featuring ultra-low on-resistance, fast switching, and ruggedized design for efficient and reliable operation in a wide variety of applications.

Operating Conditions:

Gate-to-Source Voltage: -20 to +20 V
Operating temperature: -55 to +175 °C
Max continuous drain current: 110 A (at T_C = 25 °C)

Absolute Maximum Ratings:

Max supply voltage (Drain-to-Source): 55 V
Max continuous current (Drain): 110 A (at T_C = 25 °C, V_GS @ 10V)
Max junction/storage temperature: 175 °C

Key Specs:

Drain-to-Source Breakdown Voltage: 55 V (V_GS = 0V, I_D = 250 μA)
Static Drain-to-Source On-Resistance: 8.0 mΩ (V_GS = 10V, I_D = 62A)
Gate Threshold Voltage: 2 V min, 4.0 V max (V_DS = V_GS, I_D = 250 μA)
Total Gate Charge: 146 nC max (I_D = 62A)
Input Capacitance: 3247 pF typ (V_GS = 0V, V_DS = 25V, f = 1.0MHz)
Turn-On Delay Time: 14 ns typ (V_DD = 28V, I_D = 62A, R_G = 4.5Ω, V_GS = 10V)
Peak Diode Recovery dv/dt: 5.0 V/ns
Junction-to-Case Thermal Resistance: 0.75 °C/W max

Features:

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175 C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free

Package:

D2Pak (surface mount)
TO-262 (through-hole)

IRF3205SPBF Electrical Characteristics

	Parameter	Min.	Typ.	Max.	Units	Conditions
V (BR)DSS	Drain-to-Source Breakdown Voltage	55			V	V GS = 0V, I D = 250 A
∆ V (BR)DSS / ∆ T J	Breakdown Voltage Temp. Coefficient		0.057		V/ C	Reference to 25 C, I D = 1mA
R DS(on)	Static Drain-to-Source On-Resistance			8.0	m Ω	V GS = 10V, I D = 62A /G32 /G132
V GS(th)	Gate Threshold Voltage	2		4.0	V	V DS = V GS , I D = 250 A
g fs	Forward Transconductance	44			S	V DS = 25V, I D = 62A /G132
I DSS	Drain-to-Source Leakage Current			25	A	V DS = 55V, V GS = 0V
I DSS	Drain-to-Source Leakage Current			250	A	V DS = 44V, V GS = 0V, T J = 150 C
I GSS	Gate-to-Source Forward Leakage			100	nA	V GS = 20V
I GSS	Gate-to-Source Reverse Leakage			-100	nA	V GS = -20V
Q g	Total Gate Charge			146	nC	I D = 62A
Q gs	Gate-to-Source Charge			35	nC	V DS = 44V
Q gd	Gate-to-Drain ("Miller") Charge			54	nC	V GS = 10V, See Fig. 6 and 13
t d(on)	Turn-On Delay Time		14		ns	V DD = 28V
t r	Rise Time		101		ns	I D = 62A
t d(off)	Turn-Off Delay Time		50		ns	R G = 4.5 Ω
t f	Fall Time		65		ns	V GS = 10V, See Fig. 10 /G132
L D	Internal Drain Inductance		4.5		nH	Between lead, 6mm (0.25in.) G
L S	Internal Source Inductance		7.5		nH	from package and center of die contact
C iss	Input Capacitance		3247			V GS = 0V
C oss	Output Capacitance		781			V DS = 25V
C rss	Reverse Transfer Capacitance		211		pF	= 1.0MHz, See Fig. 5
E AS	Single Pulse Avalanche Energy /G130		1050 /G134	264 /G135	mJ	I AS = 62A, L = 138 μ H

IRF3205SPBF Absolute Maximum Ratings

	Parameter	Max.	Units
I D @T C = 25 C	Continuous Drain Current, V GS @10V	110 /G133	A
I D @T C = 100 C	Continuous Drain Current, V GS @10V	80	A
I DM	Pulsed Drain Current /G129	390	A
P D @T C = 25 C	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/ C
V GS	Gate-to-Source Voltage	- 20	V
I AR	Avalanche Current /G129	62	A
E AR	Repetitive Avalanche Energy /G129	20	mJ
dv/dt	Peak Diode Recovery dv/dt /G131	5.0	V/ns
T J T STG	Operating Junction and	-55 to + 175	C
T J T STG	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	C
	Mounting torque, 6-32 or M3 srew	10 lbf in (1.1N m)

IRF3205SPBF Thermal Information

	Parameter	Typ.	Max.	Units
R θ JC	Junction-to-Case		0.75	C/W
R θ JA	Junction-to-Ambient (PCB mounted, steady-state)*		40

RDS(on) = 8.0m Ω

ID = 110A /G133

D 2 Pak IRF3205SPbF

TO-262 IRF3205LPbF

IRF3205SPBF Package Information

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
IRF3205	International Rectifier	—
IRF3205L	International Rectifier	TO-262
IRF3205LPBF	International Rectifier	TO-262

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All MOSFETs datasheets All International Rectifier datasheets (13)

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