IRF3205LPBF
N-Channel Power MOSFETThe IRF3205LPBF is a n-channel power mosfet from International Rectifier. View the full IRF3205LPBF datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
IRF3205LPBF shares its datasheet with IRF3205, whose page lists every part number it covers.
Official IRF3205LPBF datasheet (PDF) — the source this page was extracted from.
IRF3205LPBF Key Specifications
| Parameter | Value |
|---|---|
| Total Gate Charge (Qg) | 146 nC max |
| Input Capacitance (Ciss) | 3247 pF |
| Pulsed Drain Current (IDM) | 390A |
| Gate-To-Source Voltage (VGS) | ±20V |
| Drain-To-Source Voltage (VDSS) | 55V |
| Forward Transconductance (Gfs) | 44 S min |
| Operating Junction Temperature | -55C to +175C |
| Static On-Resistance (RDS(On)) | 8.0 mOhm max (VGS=10V, ID=62A) |
| Power Dissipation (PD @ TC=25C) | 200W |
| Gate Threshold Voltage (VGS(Th)) | 2V to 4.0V |
| Single Pulse Avalanche Energy (EAS) | 264 mJ max |
| Continuous Drain Current (ID @ TC=25C) | 110A |
| Continuous Drain Current (ID @ TC=100C) | 80A |
| Thermal Resistance Junction-To-Case (RθJC) | 0.75 C/W max |
IRF3205LPBF Overview
Part: IRF3205SPbF IRF3205LPbF — International Rectifier
Type: HEXFET Power MOSFET
Description: Advanced HEXFET Power MOSFETs featuring ultra-low on-resistance, fast switching, and ruggedized design for efficient and reliable operation in a wide variety of applications.
Operating Conditions:
- Gate-to-Source Voltage: -20 to +20 V
- Operating temperature: -55 to +175 °C
- Max continuous drain current: 110 A (at T_C = 25 °C)
Absolute Maximum Ratings:
- Max supply voltage (Drain-to-Source): 55 V
- Max continuous current (Drain): 110 A (at T_C = 25 °C, V_GS @ 10V)
- Max junction/storage temperature: 175 °C
Key Specs:
- Drain-to-Source Breakdown Voltage: 55 V (V_GS = 0V, I_D = 250 μA)
- Static Drain-to-Source On-Resistance: 8.0 mΩ (V_GS = 10V, I_D = 62A)
- Gate Threshold Voltage: 2 V min, 4.0 V max (V_DS = V_GS, I_D = 250 μA)
- Total Gate Charge: 146 nC max (I_D = 62A)
- Input Capacitance: 3247 pF typ (V_GS = 0V, V_DS = 25V, f = 1.0MHz)
- Turn-On Delay Time: 14 ns typ (V_DD = 28V, I_D = 62A, R_G = 4.5Ω, V_GS = 10V)
- Peak Diode Recovery dv/dt: 5.0 V/ns
- Junction-to-Case Thermal Resistance: 0.75 °C/W max
Features:
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175 C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Package:
- D2Pak (surface mount)
- TO-262 (through-hole)
IRF3205LPBF Electrical Characteristics
| Parameter | Min. | Typ. | Max. | Units | Conditions | |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-to-Source Breakdown Voltage | 55 | V | V GS = 0V, I D = 250 A | ||
| ∆ V (BR)DSS / ∆ T J | Breakdown Voltage Temp. Coefficient | 0.057 | V/ C | Reference to 25 C, I D = 1mA | ||
| R DS(on) | Static Drain-to-Source On-Resistance | 8.0 | m Ω | V GS = 10V, I D = 62A /G32 /G132 | ||
| V GS(th) | Gate Threshold Voltage | 2 | 4.0 | V | V DS = V GS , I D = 250 A | |
| g fs | Forward Transconductance | 44 | S | V DS = 25V, I D = 62A /G132 | ||
| I DSS | Drain-to-Source Leakage Current | 25 | A | V DS = 55V, V GS = 0V | ||
| I DSS | Drain-to-Source Leakage Current | 250 | A | V DS = 44V, V GS = 0V, T J = 150 C | ||
| I GSS | Gate-to-Source Forward Leakage | 100 | nA | V GS = 20V | ||
| I GSS | Gate-to-Source Reverse Leakage | -100 | nA | V GS = -20V | ||
| Q g | Total Gate Charge | 146 | nC | I D = 62A | ||
| Q gs | Gate-to-Source Charge | 35 | nC | V DS = 44V | ||
| Q gd | Gate-to-Drain ("Miller") Charge | 54 | nC | V GS = 10V, See Fig. 6 and 13 | ||
| t d(on) | Turn-On Delay Time | 14 | ns | V DD = 28V | ||
| t r | Rise Time | 101 | ns | I D = 62A | ||
| t d(off) | Turn-Off Delay Time | 50 | ns | R G = 4.5 Ω | ||
| t f | Fall Time | 65 | ns | V GS = 10V, See Fig. 10 /G132 | ||
| L D | Internal Drain Inductance | 4.5 | nH | Between lead, 6mm (0.25in.) G | ||
| L S | Internal Source Inductance | 7.5 | nH | from package and center of die contact | ||
| C iss | Input Capacitance | 3247 | V GS = 0V | |||
| C oss | Output Capacitance | 781 | V DS = 25V | |||
| C rss | Reverse Transfer Capacitance | 211 | pF | = 1.0MHz, See Fig. 5 | ||
| E AS | Single Pulse Avalanche Energy /G130 | 1050 /G134 | 264 /G135 | mJ | I AS = 62A, L = 138 μ H |
IRF3205LPBF Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| I D @T C = 25 C | Continuous Drain Current, V GS @10V | 110 /G133 | A |
| I D @T C = 100 C | Continuous Drain Current, V GS @10V | 80 | A |
| I DM | Pulsed Drain Current /G129 | 390 | A |
| P D @T C = 25 C | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.3 | W/ C | |
| V GS | Gate-to-Source Voltage | - 20 | V |
| I AR | Avalanche Current /G129 | 62 | A |
| E AR | Repetitive Avalanche Energy /G129 | 20 | mJ |
| dv/dt | Peak Diode Recovery dv/dt /G131 | 5.0 | V/ns |
| T J T STG | Operating Junction and | -55 to + 175 | C |
| T J T STG | Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | C |
| Mounting torque, 6-32 or M3 srew | 10 lbf in (1.1N m) |
IRF3205LPBF Thermal Information
| Parameter | Typ. | Max. | Units | |
|---|---|---|---|---|
| R θ JC | Junction-to-Case | 0.75 | C/W | |
| R θ JA | Junction-to-Ambient (PCB mounted, steady-state)* | 40 |
RDS(on) = 8.0m Ω
ID = 110A /G133
D 2 Pak IRF3205SPbF
TO-262 IRF3205LPbF
IRF3205LPBF Package Information
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| IRF3205 | International Rectifier | — |
| IRF3205L | International Rectifier | TO-262 |
| IRF3205SPBF | International Rectifier | D2Pak |
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- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- SI2337DS – Vishay Intertechnology, P-Channel Power MOSFET
All MOSFETs datasheetsAll International Rectifier datasheets (13)
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