IRLR3110ZTRPBF

Power MOSFET

The IRLR3110ZTRPBF is a power mosfet from International Rectifier / Infineon Technologies. View the full IRLR3110ZTRPBF datasheet below including key specifications, pinout, electrical characteristics.

Manufacturer

International Rectifier / Infineon Technologies

Key Specifications

Parameter	Value
Power Dissipation (PD)	140W (max @ TC=25°C)
Total Gate Charge (Qg)	48nC (max)
On-Resistance (RDS(On))	14mΩ (max @ VGS=10V)
Reverse Recovery Time (Trr)	51ns (max)
Gate-To-Source Voltage (VGS)	±16V
Continuous Drain Current (ID)	42A (max, package limited @ TC=25°C)
Drain-To-Source Voltage (VDSS)	100V
Operating Junction Temperature	-55°C to +175°C
Gate Threshold Voltage (VGS(Th))	1.0V to 2.5V

Overview

Part: IRLR3110ZPbF / IRLU3110ZPbF — International Rectifier / Infineon Technologies

Type: HEXFET® Power MOSFET

Description: 100V, 14mΩ N-Channel HEXFET Power MOSFET with 175°C junction operating temperature and 63A continuous drain current, designed for industrial applications.

Operating Conditions:

Operating temperature: -55 to +175 °C
Gate-to-Source Voltage: ±16 V

Absolute Maximum Ratings:

Max drain-to-source voltage: 100 V
Max continuous drain current: 63 A (at Tc = 25°C, VGS = 10V, Silicon Limited)
Max junction/storage temperature: +175 °C

Key Specs:

Drain-to-Source Breakdown Voltage (V(BR)DSS): 100 V (VGS = 0V, ID = 250μA)
Static Drain-to-Source On-Resistance (RDS(on)): 14 mΩ max (VGS = 10V, ID = 38A)
Gate Threshold Voltage (VGS(th)): 1.0 V min, 2.5 V max (VDS = VGS, ID = 100μA)
Total Gate Charge (Qg): 48 nC max (ID = 38A)
Input Capacitance (Ciss): 3980 pF typ (VGS = 0V, VDS = 25V, ƒ = 1.0MHz)
Continuous Source Current (Body Diode) (IS): 63 A max
Diode Forward Voltage (VSD): 1.3 V max (TJ = 25°C, IS = 38A, VGS = 0V)
Reverse Recovery Time (trr): 51 ns max (TJ = 25°C, IF = 38A, VDD = 50V di/dt = 100A/μs)

Features:

Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax

Package:

D-Pak (TO-252AA)
I-Pak (TO-251AA)

Features

Advanced Process Technology

Description Specifically designed for Industrial applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications. /c108 /c108 Ultra Low On-Resistance /c108 175°C Operating Temperature /c108 Fast Switching /c108 Repetitive Avalanche Allowed up to Tjmax

Pin Configuration

IRLR3110ZTRPBF — D-Pak (TO-252AA) Pinout

Pin Number	Pin Name	Type	Description
1	G	I	Gate
2	D	O	Drain
3	S	O	Source

Notes

Package: D-Pak (TO-252AA) — 3-pin surface-mount power MOSFET package
Pin 2 (Drain) is connected to the metal tab on the back of the package for enhanced thermal dissipation
This is an N-channel HEXFET Power MOSFET with 100V rating and 14 mΩ typical on-resistance
The part number suffix "ZTRPBF" indicates the D-Pak package variant with RoHS compliance

Electrical Characteristics

	Parameter	Min.	Typ.	Max.	Units	Conditions
V (BR)DSS	Drain-to-Source Breakdown Voltage	100	---	---	V	V GS = 0V, I D = 250μA
∆ V (BR)DSS / ∆ T J	Breakdown Voltage Temp. Coefficient	---	0.077	---	V/°C	Reference to 25°C, I D = 1mA
R DS(on)	Static Drain-to-Source On-Resistance	---	11	14	m Ω	V GS = 10V, I D = 38A /c101
	Static Drain-to-Source On-Resistance	---	12	16	m Ω	V GS = 4.5V, I D = 32A /c101
V GS(th)	Gate Threshold Voltage	1.0	---	2.5	V	V DS = V GS , I D = 100μA
gfs	Forward Transconductance	52	---	---	S	V DS = 25V, I D = 38A
I DSS	Drain-to-Source Leakage Current	---	---	20	μA	V DS = 100V, V GS = 0V
	Drain-to-Source Leakage Current	---	---	250	μA	V DS = 100V, V GS = 0V, T J = 125°C
I GSS	Gate-to-Source Forward Leakage	---	---	200	nA	V GS = 16V
I GSS	Gate-to-Source Reverse Leakage	---	---	-200	nA	V GS = -16V
Q g	Total Gate Charge	---	34	48	nC	I D = 38A
Q gs	Gate-to-Source Charge	---	10	---	nC	V DS = 50V
Q gd	Gate-to-Drain ("Miller") Charge	---	15	---	nC	V GS = 4.5V /c101
t d(on)	Turn-On Delay Time	---	24	---	nC	V DD = 50V
t r	Rise Time	---	110	---	nC	I D = 38A
t d(off)	Turn-Off Delay Time	---	33	---	ns	R G = 3.7 Ω
t f	Fall Time	---	48	---	nC	V GS = 4.5V /c101
L D	Internal Drain Inductance	---	4.5	---	nH	D Between lead, 6mm (0.25in.)
L S	Internal Source Inductance	---	7.5	---	nH	S G from package and center of die contact
C iss	Input Capacitance	---	3980	---	pF	V GS = 0V
C oss	Output Capacitance	---	310	---	pF	V DS = 25V
C rss	Reverse Transfer Capacitance	---	130	---	pF	ƒ = 1.0MHz
C oss	Output Capacitance	---	1820	---	pF	V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz
C oss	Output Capacitance	---	170	---	pF	V GS = 0V, V DS = 80V, ƒ = 1.0MHz
C oss eff.	Effective Output Capacitance	---	320	---	pF	V GS = 0V, V DS = 0V to 80V /c102

Ordering Information

MPN	Package	Temperature Range	Packing
IRLR3110ZPbF	D-Pak (TO-252AA)	-55 to +175 °C	null
IRLR3110ZTRPBF	D-Pak (TO-252AA)	-55 to +175 °C	Tape & Reel
IRLU3110ZPbF	I-Pak (TO-251AA)	-55 to +175 °C	null

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
IRLR3110Z	International Rectifier / Infineon Technologies	—
IRLR3110ZPBF	International Rectifier / Infineon Technologies	D-Pak (TO-252AA)
IRLU3110ZPBF	International Rectifier / Infineon Technologies	I-Pak (TO-251AA)

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