IRLR3110ZPBF
Power MOSFETThe IRLR3110ZPBF is a power mosfet from International Rectifier / Infineon Technologies. View the full IRLR3110ZPBF datasheet below including key specifications, electrical characteristics.
IRLR3110ZPBF shares its datasheet with IRLR3110Z, whose page lists every part number it covers.
Official IRLR3110ZPBF datasheet (PDF) — the source this page was extracted from.
IRLR3110ZPBF Key Specifications
| Parameter | Value |
|---|---|
| VDSS | 100V |
| Total Gate Charge | 34nC typ, 48nC max |
| Pulsed Drain Current | 250A |
| Gate Threshold Voltage | 1.0V to 2.5V |
| Gate-To-Source Voltage | ±16V |
| Input Capacitance (Ciss) | 3980pF |
| RDS(On) @ VGS=10V, ID=38A | 11 mOhm typ, 14 mOhm max |
| Power Dissipation (TC=25C) | 140W |
| RDS(On) @ VGS=4.5V, ID=32A | 12 mOhm typ, 16 mOhm max |
| Operating Junction Temperature | -55C to +175C |
| Thermal Resistance Junction-To-Case | 1.05 C/W max |
| Single Pulse Avalanche Energy (Thermally Limited) | 110mJ |
| Continuous Drain Current (TC=25C, Package Limited) | 42A |
| Continuous Drain Current (TC=25C, Silicon Limited) | 63A |
IRLR3110ZPBF Overview
Part: IRLR3110ZPbF / IRLU3110ZPbF — International Rectifier / Infineon Technologies
Type: HEXFET® Power MOSFET
Description: 100V, 14mΩ N-Channel HEXFET Power MOSFET with 175°C junction operating temperature and 63A continuous drain current, designed for industrial applications.
Operating Conditions:
- Operating temperature: -55 to +175 °C
- Gate-to-Source Voltage: ±16 V
Absolute Maximum Ratings:
- Max drain-to-source voltage: 100 V
- Max continuous drain current: 63 A (at Tc = 25°C, VGS = 10V, Silicon Limited)
- Max junction/storage temperature: +175 °C
Key Specs:
- Drain-to-Source Breakdown Voltage (V(BR)DSS): 100 V (VGS = 0V, ID = 250μA)
- Static Drain-to-Source On-Resistance (RDS(on)): 14 mΩ max (VGS = 10V, ID = 38A)
- Gate Threshold Voltage (VGS(th)): 1.0 V min, 2.5 V max (VDS = VGS, ID = 100μA)
- Total Gate Charge (Qg): 48 nC max (ID = 38A)
- Input Capacitance (Ciss): 3980 pF typ (VGS = 0V, VDS = 25V, ƒ = 1.0MHz)
- Continuous Source Current (Body Diode) (IS): 63 A max
- Diode Forward Voltage (VSD): 1.3 V max (TJ = 25°C, IS = 38A, VGS = 0V)
- Reverse Recovery Time (trr): 51 ns max (TJ = 25°C, IF = 38A, VDD = 50V di/dt = 100A/μs)
Features:
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
Package:
- D-Pak (TO-252AA)
- I-Pak (TO-251AA)
IRLR3110ZPBF Features
- Advanced Process Technology
Description Specifically designed for Industrial applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications. /c108 /c108 Ultra Low On-Resistance /c108 175°C Operating Temperature /c108 Fast Switching /c108 Repetitive Avalanche Allowed up to Tjmax
IRLR3110ZPBF Electrical Characteristics
| Parameter | Min. | Typ. | Max. | Units | Conditions | |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-to-Source Breakdown Voltage | 100 | --- | --- | V | V GS = 0V, I D = 250μA |
| ∆ V (BR)DSS / ∆ T J | Breakdown Voltage Temp. Coefficient | --- | 0.077 | --- | V/°C | Reference to 25°C, I D = 1mA |
| R DS(on) | Static Drain-to-Source On-Resistance | --- | 11 | 14 | m Ω | V GS = 10V, I D = 38A /c101 |
| Static Drain-to-Source On-Resistance | --- | 12 | 16 | m Ω | V GS = 4.5V, I D = 32A /c101 | |
| V GS(th) | Gate Threshold Voltage | 1.0 | --- | 2.5 | V | V DS = V GS , I D = 100μA |
| gfs | Forward Transconductance | 52 | --- | --- | S | V DS = 25V, I D = 38A |
| I DSS | Drain-to-Source Leakage Current | --- | --- | 20 | μA | V DS = 100V, V GS = 0V |
| Drain-to-Source Leakage Current | --- | --- | 250 | μA | V DS = 100V, V GS = 0V, T J = 125°C | |
| I GSS | Gate-to-Source Forward Leakage | --- | --- | 200 | nA | V GS = 16V |
| I GSS | Gate-to-Source Reverse Leakage | --- | --- | -200 | nA | V GS = -16V |
| Q g | Total Gate Charge | --- | 34 | 48 | nC | I D = 38A |
| Q gs | Gate-to-Source Charge | --- | 10 | --- | nC | V DS = 50V |
| Q gd | Gate-to-Drain ("Miller") Charge | --- | 15 | --- | nC | V GS = 4.5V /c101 |
| t d(on) | Turn-On Delay Time | --- | 24 | --- | nC | V DD = 50V |
| t r | Rise Time | --- | 110 | --- | nC | I D = 38A |
| t d(off) | Turn-Off Delay Time | --- | 33 | --- | ns | R G = 3.7 Ω |
| t f | Fall Time | --- | 48 | --- | nC | V GS = 4.5V /c101 |
| L D | Internal Drain Inductance | --- | 4.5 | --- | nH | D Between lead, 6mm (0.25in.) |
| L S | Internal Source Inductance | --- | 7.5 | --- | nH | S G from package and center of die contact |
| C iss | Input Capacitance | --- | 3980 | --- | pF | V GS = 0V |
| C oss | Output Capacitance | --- | 310 | --- | pF | V DS = 25V |
| C rss | Reverse Transfer Capacitance | --- | 130 | --- | pF | ƒ = 1.0MHz |
| C oss | Output Capacitance | --- | 1820 | --- | pF | V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz |
| C oss | Output Capacitance | --- | 170 | --- | pF | V GS = 0V, V DS = 80V, ƒ = 1.0MHz |
| C oss eff. | Effective Output Capacitance | --- | 320 | --- | pF | V GS = 0V, V DS = 0V to 80V /c102 |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| IRLR3110Z | International Rectifier / Infineon Technologies | — |
| IRLR3110ZTRPBF | International Rectifier / Infineon Technologies | D-Pak (TO-252AA) |
| IRLU3110ZPBF | International Rectifier / Infineon Technologies | I-Pak (TO-251AA) |
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- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
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- 2N7002 – Nexperia, N-channel Trench MOSFET
All MOSFETs datasheetsAll International Rectifier datasheets (13)
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