IPP110N20N3GXKSA1

Part: IPP110N20N3 G (IPB107N20N3 G in the same datasheet) — Infineon Technologies

Type: N-channel Power MOSFET (OptiMOS 3)

Description: 200 V, 88 A N-channel normal-level power MOSFET with R DS(on) max of 11 mΩ (TO220/TO262) or 10.7 mΩ (TO263) at V GS = 10 V, rated to 175 °C.

Operating Conditions:

• Supply voltage: not applicable (V DS up to 200 V; V GS ±20 V)
• Operating temperature: -55 to 175 °C
• Continuous drain current: 88 A at T C = 25 °C, 63 A at T C = 100 °C

Absolute Maximum Ratings:

• Max drain-source voltage: 200 V (V DS, product summary)
• Max gate-source voltage: ±20 V
• Max continuous drain current: 88 A (T C = 25 °C)
• Max pulsed drain current: 352 A (T C = 25 °C)
• Max power dissipation: 300 W (T C = 25 °C)
• Single-pulse avalanche energy: 560 mJ (I D = 80 A, R GS = 25 Ω)
• Max junction/storage temperature: -55 to 175 °C

Key Specs:

• V (BR)DSS: 200 V min (V GS = 0 V, I D = 1 mA)
• R DS(on): 9.9 mΩ typ, 11 mΩ max (V GS = 10 V, I D = 88 A, TO220/TO262); 9.6 mΩ typ, 10.7 mΩ max (TO263)
• V GS(th): 2 / 3 / 4 V min/typ/max (V DS = V GS, I D = 270 μA)
• Q g: 65 nC typ, 87 nC max (V DD = 100 V, I D = 44 A, V GS = 0 to 10 V)
• C iss: 5340 pF typ, 7100 pF max (V DS = 100 V, f = 1 MHz)
• I DSS: 0.1 μA typ, 1 μA max (V DS = 160 V, T j = 25 °C)
• Thermal resistance R thJC: 0.5 K/W max
• Switching times (V DD = 100 V, I D = 44 A): t d(on) 18 ns, t r 26 ns, t d(off) 41 ns, t f 11 ns typ

Features:

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification

Applications:

• High-frequency switching
• Synchronous rectification

Package:

• PG-TO220-3
• PG-TO263-3
• PG-TO262-3

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC 1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification

I

D=f(

V

DS);

T

C=25 °C;

D

=0

parameter: t p

$$Z_{thJC}=f(t_p)$$

parameter:

D = t p / T