IPP110N20N3GXKSA1
N-channel MOSFETThe IPP110N20N3GXKSA1 is a n-channel mosfet from Infineon Technologies. View the full IPP110N20N3GXKSA1 datasheet below including key specifications, pinout, absolute maximum ratings.
Manufacturer
Infineon Technologies
Category
N-channel MOSFET
Package
PG-TO220-3, PG-TO262-3, PG-TO263-3
Key Specifications
| Parameter | Value |
|---|---|
| Total Gate Charge (Qg) | 87 nC (max) |
| Power Dissipation (Ptot) | 300 W (at Tc=25°C) |
| Gate-Source Voltage (VGS) | ±20 V |
| Drain-Source Voltage (VDS) | 200 V |
| Operating Temperature Range | -55 °C to 175 °C |
| Continuous Drain Current (ID) | 88 A (at Tc=25°C) |
| On-State Resistance (RDS(On)) | 10.7 mΩ (max, for TO263) |
| Gate Threshold Voltage (VGS(Th)) | 2 V to 4 V |
Overview
Part: IPP110N20N3 G — Infineon Technologies
Type: N-channel OptiMOS™ 3 Power-Transistor
Description: 200 V, 88 A N-channel power transistor with 10.7 mΩ max on-resistance and 175 °C operating temperature, ideal for high-frequency switching and synchronous rectification.
Operating Conditions:
- Gate-source voltage: ±20 V
- Operating temperature: -55 to 175 °C
- Continuous drain current: 88 A (at T C =25 °C)
Absolute Maximum Ratings:
- Max drain-source voltage: 200 V
- Max continuous drain current: 88 A (at T C =25 °C)
- Max junction/storage temperature: 175 °C
Key Specs:
- Drain-source breakdown voltage V(BR)DSS: 200 V (V GS =0 V, I D =1 mA)
- Gate threshold voltage V GS(th): 2 V min, 4 V max (V DS = V GS , I D =270 μA)
- Zero gate voltage drain current I DSS: 1 μA max (V DS =160 V, V GS =0 V, T j =25 °C)
- Drain-source on-state resistance R DS(on): 10.7 mΩ max (V GS =10 V, I D =88 A, TO263)
- Input capacitance C iss: 7100 pF max (V GS =0 V, V DS =100 V, f =1 MHz)
- Gate charge total Q g: 87 nC max (V DD =100 V, I D =44 A, V =0 to 10 V)
- Diode continous forward current I S: 88 A max (T C =25 °C)
- Diode forward voltage V SD: 1.2 V max (V GS =0 V, I F =88 A, T j =25 °C)
Features:
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC for target application
- Halogen-free according to IEC61249-2-21
- Ideal for high-frequency switching and synchronous rectification
Package:
- PG-TO220-3
- PG-TO263-3
- PG-TO262-3
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC 1) for target application
- Halogen-free according to IEC61249-2-21
- Ideal for high-frequency switching and synchronous rectification
Pin Configuration
IPP110N20N3GXKSA1 Pinout
Package: PG-TO220-3
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | Gate (G) | I | Gate terminal |
| 2 | Drain (D) | O | Drain terminal |
| 3 | Source (S) | O | Source terminal |
Notes
- IPP110N20N3GXKSA1 is a 3-pin power MOSFET in PG-TO220-3 package (TO220 outline with 3 leads).
- Pin 2 (Drain) is the tab/mounting pad on the package.
- This is an N-channel enhancement-mode MOSFET with integrated body diode.
- Maximum ratings: V_DS = 200 V, I_D = 88 A (at T_C = 25°C), R_DS(on) = 10.7 mΩ (max).
Absolute Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Continuous drain current | I D | T C =25 °C T C =100 °C | 88 63 | A |
| Pulsed drain current 2) | I D,pulse | T C =25 °C | 352 | |
| Avalanche energy, single pulse | E AS | I D =80 A, R GS =25 W | 560 | mJ |
| Reverse diode d v /d t | d v /d t | 10 | kV/μs | |
| Gate source voltage | V GS | ±20 | V | |
| Power dissipation | P tot | T C =25 °C | 300 | W |
| Operating and storage temperature | T j , T stg | -55 ... 175 | °C | |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
Thermal Information
parameter:
D = t p / T
Ordering Information
| MPN | Package | Temperature Range | Packing |
|---|---|---|---|
| IPB107N20N3 G | PG-TO220-3 | -55 to 175 °C | null |
| IPB107N20N3 G | PG-TO262-3 | -55 to 175 °C | null |
| IPB107N20N3 G | PG-TO263-3 | -55 to 175 °C | null |
| IPP110N20N3 G | PG-TO220-3 | -55 to 175 °C | null |
| IPP110N20N3 G | PG-TO262-3 | -55 to 175 °C | null |
| IPP110N20N3 G | PG-TO263-3 | -55 to 175 °C | null |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| IPB107N20N3 G | Infineon Technologies | PG-TO263-3 |
| IPP110N20N3 | Infineon Technologies | — |
| IPP110N20N3 G | Infineon Technologies | PG-TO263-3 |
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