IPP110N20N3

Part: IPP110N20N3 G — Infineon Technologies

Type: N-channel OptiMOS™ 3 Power-Transistor

Description: 200 V, 88 A N-channel power transistor with 10.7 mΩ max on-resistance and 175 °C operating temperature, ideal for high-frequency switching and synchronous rectification.

Operating Conditions:

• Gate-source voltage: ±20 V
• Operating temperature: -55 to 175 °C
• Continuous drain current: 88 A (at T C =25 °C)

Absolute Maximum Ratings:

• Max drain-source voltage: 200 V
• Max continuous drain current: 88 A (at T C =25 °C)
• Max junction/storage temperature: 175 °C

Key Specs:

• Drain-source breakdown voltage V(BR)DSS: 200 V (V GS =0 V, I D =1 mA)
• Gate threshold voltage V GS(th): 2 V min, 4 V max (V DS = V GS , I D =270 μA)
• Zero gate voltage drain current I DSS: 1 μA max (V DS =160 V, V GS =0 V, T j =25 °C)
• Drain-source on-state resistance R DS(on): 10.7 mΩ max (V GS =10 V, I D =88 A, TO263)
• Input capacitance C iss: 7100 pF max (V GS =0 V, V DS =100 V, f =1 MHz)
• Gate charge total Q g: 87 nC max (V DD =100 V, I D =44 A, V =0 to 10 V)
• Diode continous forward current I S: 88 A max (T C =25 °C)
• Diode forward voltage V SD: 1.2 V max (V GS =0 V, I F =88 A, T j =25 °C)

Features:

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification

Package:

• PG-TO220-3
• PG-TO263-3
• PG-TO262-3

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC 1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification

parameter:

D = t p / T