HL20N06D
N-Channel Power MOSFETThe HL20N06D is a n-channel power mosfet from HL Microelectronics. View the full HL20N06D datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official HL20N06D datasheet (PDF) — the source this page was extracted from.
HL20N06D Key Specifications
| Parameter | Value |
|---|---|
| Total Gate Charge (Qg) | 20.5nC typ |
| Input Capacitance (Ciss) | 1148pF typ |
| RDS(On) (VGS=10V, ID=5A) | 28mΩ typ, 40mΩ max |
| Gate-Source Voltage (VGS) | ±20V |
| RDS(On) (VGS=4.5V, ID=3A) | 36mΩ typ, 50mΩ max |
| Drain-Source Voltage (VDS) | 60V |
| Pulsed Drain Current (IDM) | 46A |
| Total Power Dissipation (PD) | 34.5W |
| Operating Junction Temperature | -55°C to 150°C |
| Gate Threshold Voltage (VGS(Th)) | 1V to 2.5V |
| Single Pulsed Avalanche Energy (EAS) | 25.5mJ |
| Continuous Drain Current (ID, TC=25°C) | 20A |
| Continuous Drain Current (ID, TC=70°C) | 10A |
| Thermal Resistance Junction-To-Ambient (RθJA) | 62°C/W max |
HL20N06D Overview
Part: HL20N06D (HL Microelectronics)
Type: N-Ch 60V Fast Switching MOSFET
Description: 60V, 20A N-channel MOSFET with 28 mΩ typical on-resistance and fast switching speed, featuring super low gate charge and advanced trench technology.
Operating Conditions:
- Drain-Source Voltage: 0–60 V
- Gate-Source Voltage: ±20 V
- Operating temperature: -55 to 150 °C
- Continuous Drain Current (TC=25 °C): 20 A
Absolute Maximum Ratings:
- Max supply voltage (Drain-Source): 60 V
- Max continuous current (Drain, TC=25 °C): 20 A
- Max junction/storage temperature: 150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BV DSS): 60 V (min, VGS=0V, ID=250μA)
- Gate Threshold Voltage (V GS(th)): 1 V (min) to 2.5 V (max, VDS=VGS, ID=250μA)
- Static Drain-Source On-Resistance (R DS(on)): 28 mΩ (typ, VGS=10V, ID=5A)
- Static Drain-Source On-Resistance (R DS(on)): 36 mΩ (typ, VGS=4.5V, ID=3A)
- Total Gate Charge (Q g): 20.5 nC (typ, VDS=30V, VGS=10V, ID=2.5A)
- Input Capacitance (C iss): 1148 pF (typ, VDS=25V, VGS=0V, f=1MHz)
- Turn-on Delay Time (T d(on)): 7.5 nS (typ, VGS=10V, VDS=30V, RG=1.8Ω, ID=5A)
- Diode Forward Voltage (V SD): 1.2 V (max, VGS=0V, IS=1A)
Features:
- Super Low Gate Charge
- Green Device Available
- Fast Switching Speed
- Advanced high cell density Trench technology
Applications:
- DC-DC Converters
- Power management functions
- Synchronous-rectification applications
Package:
- PDFN3x3-8L
HL20N06D Electrical Characteristics
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BV DSS | V GS =0V,I D =250μA | 60 | - | - | V |
| Drain-Source Leakage Current | I DSS | V DS =60V,V GS =0V | - | - | 1 | μA |
| Gate-Source Leakage Current | I GSS | V DS =0V, V GS =±20V | - | - | ±100 | nA |
| Gate Threshold Voltage | V GS(th) | V DS =V GS ,I D =250μA | 1 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance 3 | R DS(on) | V GS =10V, I D =5A | - | 28 | 40 | mΩ |
| Static Drain-Source On-Resistance 3 | R DS(on) | V GS =4.5V, I D =3A | - | 36 | 50 | mΩ |
| Gate Resistance | R g | DS =0V,V GS =0V,f=1MHz V DS =25V,V GS =0V, | - | - | - | Ω |
| Input Capacitance | C iss | f=1MHz | - | 1148 | - | pF |
| Output Capacitance | C oss | f=1MHz | - | 59 | - | pF |
| Reverse Transfer Capacitance | C rss | f=1MHz | - | 49 | - | pF |
| Total Gate Charge | Q g | V DS =30V,V GS =10V, I D =2.5A | - | 20.5 | - | nC |
| Gate-Source Charge | Q gs | V DS =30V,V GS =10V, I D =2.5A | - | 3.5 | - | nC |
| Gate-Drain Charge | Q gd | V DS =30V,V GS =10V, I D =2.5A | - | 5.5 | - | nC |
| Turn-on Delay Time | T d(on) | V GS =10V,V DS =30V, R G =1.8Ω,I D =5A | - | 7.5 | - | nS |
| Turn-on Rise Time | T r | V GS =10V,V DS =30V, R G =1.8Ω,I D =5A | - | 20 | - | nS |
| Turn-Off Delay Time | T d(off) | V GS =10V,V DS =30V, R G =1.8Ω,I D =5A | - | 15 | - | nS |
| Turn-Off Fall Time | T f | V GS =10V,V DS =30V, R G =1.8Ω,I D =5A | - | 24 | - | nS |
| Diode Forward Voltage | V SD | V GS =0V,I S =1A | - | - | 1.2 | V |
| Continuous Source Current | I S | V G =V D =0V,Force Current | - | - | 5 | A |
| Pulsed Source Current | I SM | V G =V D =0V,Force Current | - | - | 20 | A |
| Body Diode Reverse Recovery Time | trr | I F =5A,dl/dt=100A/us | - | 29 | - | ns |
| Body Diode Reverse Recovery Charge | Qrr | I F =5A,dl/dt=100A/us | - | 43 | - | nC |
HL20N06D Absolute Maximum Ratings
| Parameter | Parameter | Symbol | Limit | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | Drain-Source Voltage | V DS | 60 | V |
| Gate-Source Voltage | Gate-Source Voltage | V GS | ± 20 | V |
| T C =25 °C | l D | 20 | A | |
| T C =70 °C | l D | 10 | A | |
| Pulsed Drain Current 2 | Pulsed Drain Current 2 | l DM | 46 | A |
| Single Pulsed Avalanche Energy 3 | Single Pulsed Avalanche Energy 3 | EAS | 25.5 | mJ |
| Avalanche Current | Avalanche Current | I AS | 20 | A |
| Total Power Dissipation 4 | Total Power Dissipation 4 | P D | 34.5 | W |
| Operating Junction Temperature Range | Operating Junction Temperature Range | T J | -55 ~ 150 | °C |
| Storage Temperature Range | Storage Temperature Range | T STG | -55 ~ 150 | °C |
HL20N06D Thermal Information
| Parameter | Symbol | Typ. | Max. | Unit |
|---|---|---|---|---|
| Thermal Resistance Junction-to-Case 1 | R θJC | -- | -- | °C /W |
| Thermal Resistance Junction-to-Ambient 1 | R θJA | -- | 62 | °C /W |
HL20N06D Package Information
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| 20N06D | onsemi | DPAK |
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- STL110N10F7 – STMicroelectronics, N-channel Power MOSFET
- 2N7002 – Nexperia, N-channel Trench MOSFET
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
Ask your AI agent about the HL20N06D
Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.
claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp
Then ask: "Can the HL20N06D run from my 12 V rail? Check it against the datasheet limits."
Create a free account $2 of usage every month, no card needed.