HL20N06D
The HL20N06D is an electronic component from HL Microelectronics. View the full HL20N06D datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
HL Microelectronics
Overview
Part: HL20N06D (HL Microelectronics)
Type: N-Ch 60V Fast Switching MOSFET
Description: 60V, 20A N-channel MOSFET with 28 mΩ typical on-resistance and fast switching speed, featuring super low gate charge and advanced trench technology.
Operating Conditions:
- Drain-Source Voltage: 0–60 V
- Gate-Source Voltage: ±20 V
- Operating temperature: -55 to 150 °C
- Continuous Drain Current (TC=25 °C): 20 A
Absolute Maximum Ratings:
- Max supply voltage (Drain-Source): 60 V
- Max continuous current (Drain, TC=25 °C): 20 A
- Max junction/storage temperature: 150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BV DSS): 60 V (min, VGS=0V, ID=250μA)
- Gate Threshold Voltage (V GS(th)): 1 V (min) to 2.5 V (max, VDS=VGS, ID=250μA)
- Static Drain-Source On-Resistance (R DS(on)): 28 mΩ (typ, VGS=10V, ID=5A)
- Static Drain-Source On-Resistance (R DS(on)): 36 mΩ (typ, VGS=4.5V, ID=3A)
- Total Gate Charge (Q g): 20.5 nC (typ, VDS=30V, VGS=10V, ID=2.5A)
- Input Capacitance (C iss): 1148 pF (typ, VDS=25V, VGS=0V, f=1MHz)
- Turn-on Delay Time (T d(on)): 7.5 nS (typ, VGS=10V, VDS=30V, RG=1.8Ω, ID=5A)
- Diode Forward Voltage (V SD): 1.2 V (max, VGS=0V, IS=1A)
Features:
- Super Low Gate Charge
- Green Device Available
- Fast Switching Speed
- Advanced high cell density Trench technology
Applications:
- DC-DC Converters
- Power management functions
- Synchronous-rectification applications
Package:
- PDFN3x3-8L
Electrical Characteristics
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BV DSS | V GS =0V,I D =250μA | 60 | - | - | V |
| Drain-Source Leakage Current | I DSS | V DS =60V,V GS =0V | - | - | 1 | μA |
| Gate-Source Leakage Current | I GSS | V DS =0V, V GS =±20V | - | - | ±100 | nA |
| Gate Threshold Voltage | V GS(th) | V DS =V GS ,I D =250μA | 1 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance 3 | R DS(on) | V GS =10V, I D =5A | - | 28 | 40 | mΩ |
| Static Drain-Source On-Resistance 3 | R DS(on) | V GS =4.5V, I D =3A | - | 36 | 50 | mΩ |
| Gate Resistance | R g | DS =0V,V GS =0V,f=1MHz V DS =25V,V GS =0V, | - | - | - | Ω |
| Input Capacitance | C iss | f=1MHz | - | 1148 | - | pF |
| Output Capacitance | C oss | f=1MHz | - | 59 | - | pF |
| Reverse Transfer Capacitance | C rss | f=1MHz | - | 49 | - | pF |
| Total Gate Charge | Q g | V DS =30V,V GS =10V, I D =2.5A | - | 20.5 | - | nC |
| Gate-Source Charge | Q gs | V DS =30V,V GS =10V, I D =2.5A | - | 3.5 | - | nC |
| Gate-Drain Charge | Q gd | V DS =30V,V GS =10V, I D =2.5A | - | 5.5 | - | nC |
| Turn-on Delay Time | T d(on) | V GS =10V,V DS =30V, R G =1.8Ω,I D =5A | - | 7.5 | - | nS |
| Turn-on Rise Time | T r | V GS =10V,V DS =30V, R G =1.8Ω,I D =5A | - | 20 | - | nS |
| Turn-Off Delay Time | T d(off) | V GS =10V,V DS =30V, R G =1.8Ω,I D =5A | - | 15 | - | nS |
| Turn-Off Fall Time | T f | V GS =10V,V DS =30V, R G =1.8Ω,I D =5A | - | 24 | - | nS |
| Diode Forward Voltage | V SD | V GS =0V,I S =1A | - | - | 1.2 | V |
| Continuous Source Current | I S | V G =V D =0V,Force Current | - | - | 5 | A |
| Pulsed Source Current | I SM | V G =V D =0V,Force Current | - | - | 20 | A |
| Body Diode Reverse Recovery Time | trr | I F =5A,dl/dt=100A/us | - | 29 | - | ns |
| Body Diode Reverse Recovery Charge | Qrr | I F =5A,dl/dt=100A/us | - | 43 | - | nC |
Absolute Maximum Ratings
| Parameter | Parameter | Symbol | Limit | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | Drain-Source Voltage | V DS | 60 | V |
| Gate-Source Voltage | Gate-Source Voltage | V GS | ± 20 | V |
| T C =25 °C | l D | 20 | A | |
| T C =70 °C | l D | 10 | A | |
| Pulsed Drain Current 2 | Pulsed Drain Current 2 | l DM | 46 | A |
| Single Pulsed Avalanche Energy 3 | Single Pulsed Avalanche Energy 3 | EAS | 25.5 | mJ |
| Avalanche Current | Avalanche Current | I AS | 20 | A |
| Total Power Dissipation 4 | Total Power Dissipation 4 | P D | 34.5 | W |
| Operating Junction Temperature Range | Operating Junction Temperature Range | T J | -55 ~ 150 | °C |
| Storage Temperature Range | Storage Temperature Range | T STG | -55 ~ 150 | °C |
Thermal Information
| Parameter | Symbol | Typ. | Max. | Unit |
|---|---|---|---|---|
| Thermal Resistance Junction-to-Case 1 | R θJC | -- | -- | °C /W |
| Thermal Resistance Junction-to-Ambient 1 | R θJA | -- | 62 | °C /W |
Package Information
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