MOSFETs Datasheets
146 MOSFETs datasheets read into specs, pinouts and ratings. Parts from Infineon Technologies, Diodes and onsemi.
MOSFETs datasheets, page 5
146 parts · page 5 of 5. Most used first, then by part number.
SI2302CDS-T1-E3
Vishay Intertechnology
MOSFETs 20V Vds 8V Vgs SOT-23
SI2302CDS-T1-GE3
Vishay Intertechnology
MOSFET N-CH 20V 2.6A SOT23-3
SI2333DDS-T1-E3
Vishay Intertechnology
12 V P-channel TrenchFET power MOSFET with low on-resistance (28 mΩ max at VGS = -4.5 V) for load and battery switching in SOT-23 package
SI2337DS
Vishay Intertechnology
1 P-Channel 1.25W 100V 1A 21pF 28pF 2V 448pF 500mΩ@10V 8nC@10V SOT-23 MOSFETs ROHS
SI2337DS-T1-E3
Vishay Intertechnology
MOSFET P-CH 80V 2.2A SOT23-3
SI2337DS-T1-GE3
Vishay Intertechnology
In a Pack of 20, P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay SI2337DS-T1-GE3
SI7157DP
Vishay Intertechnology
P-Channel 20 V (D-S) TrenchFET Gen III power MOSFET for mobile computing, adaptor, battery, and load switch applications.
SIR668DP-T1-RE3
Vishay Intertechnology
MOSFET N-CH 100V 95A PPAK SO-8
SSM14N956L
Toshiba
Silicon N-channel MOSFET with very low source-source on-resistance (1.0 mOhm typ. at VGS=4.5V) for lithium-ion battery protection circuits
SSM14N956L,EFF
Toshiba
12V Common Drain Mosfet Rss(on):
SSM3J338R
Toshiba
1W(Ta) 10V 1V@1mA 19.5nC@ 4.5 V 1P 12V 17.6m¦¸@ 6A, 8V 6A 1.4nF@6V SOT-23F 2.9mm*1.8mm*800¦Ìm
SSM3J338R,LF
Toshiba
1W(Ta) 10V 1V@1mA 19.5nC@ 4.5 V 1P 12V 17.6m¦¸@ 6A, 8V 6A 1.4nF@6V SOT-23F 2.9mm*1.8mm*800¦Ìm
SSM3K333R
Toshiba
MOSFETs
SSM3K333R,LF(T
Toshiba
N-Channel 30V 6A 2.5V @ 100uA 28mΩ @ 5A, 10V 1W SOT-23F MOSFET RoHS
STB55NF06L-1
STMicroelectronics
60V, 55A N-channel STripFET II logic-level power MOSFET with low on-resistance, 100% avalanche tested, for switching applications
STB55NF06LT4
STMicroelectronics
60V, 55A N-channel logic-level STripFET II Power MOSFET with RDS(on) below 0.018 Ω, 100% avalanche tested, for switching applications
STL110N10F7
STMicroelectronics
N-channel 100 V, 0.005 Ohm typ., 107 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
STL6P3LLH6-MS
STMicroelectronics
P-channel Power MOSFET developed using STripFET H6 technology, featuring very low on-resistance and high avalanche ruggedness, suitable for switching applications.
STP55NF06L
STMicroelectronics
N-channel Power MOSFET featuring low on-resistance, rugged avalanche characteristics, and high packing density, developed using STMicroelectronics' "Single Feature Size™" strip-based process.
STR2P3LLH6
STMicroelectronics
MOSFET P-CH 30V 2A SOT-23
TPN6R303NC
Toshiba
N-channel Low-VDSS MOSFET for high-speed switching power supply applications, part of the U-MOSVIII-H series.
TPN6R303NC,LQ
Toshiba Semiconductor and Storage
MOSFET N CH 30V 20A 8TSON-ADV
TPS22918
Texas Instruments
5.5-V, 2-A, 52-mΩ on-resistance single-channel load switch with configurable rise time and adjustable quick output discharge
TPS22918-Q1
Texas Instruments
5.5-V, 2-A, 52-mΩ on-resistance N-channel load switch with configurable rise time and adjustable quick output discharge (automotive Q1 qualified version of TPS22918)
TPS22918DBVR
Texas Instruments
Power Switch ICs - Power Distribution 5.5-V 2-A 52-mohm lo ad switch with adj A 595-TPS22918DBVT
TPS22918DBVT
Texas Instruments
Power Switch ICs - Power Distribution 5.5-V 2-A 52-mohm lo ad switch with adj A 595-TPS22918DBVR