SSM14N956L,EFF

Part: SSM14N956L — Toshiba

Type: Silicon N-Channel MOSFET (Common-Drain / Source-Source Configuration)

Description: 12 V, 20 A dual N-channel MOSFET offering low typical source-source on-resistance down to 1.0 mΩ for battery protection circuits.

Operating Conditions:

• Supply voltage: not applicable

Absolute Maximum Ratings:

• Max supply voltage: 12 V (VSSS)
• Max continuous current: 20.0 A (Source current DC, IS)
• Max junction/storage temperature: 150 °C (Tch max), -55 to 150 °C (Tstg)

Key Specs:

• Source-source breakdown voltage V(BR)SSS: 12 V min (IS = 1 mA, VGS = 0 V)
• Gate threshold voltage Vth: 0.35 V min, 0.9 V typ, 1.4 V max (VSS = 6 V, IS = 1.57 mA)
• Source-source on-resistance RSS(ON): 1.00 mΩ typ, 1.35 mΩ max (IS = 10 A, VGS = 4.5 V)
• Source-source on-resistance RSS(ON): 1.10 mΩ typ, 1.50 mΩ max (IS = 10 A, VGS = 3.8 V)
• Source-source on-resistance RSS(ON): 1.25 mΩ typ, 2.15 mΩ max (IS = 10 A, VGS = 3.1 V)
• Source-source on-resistance RSS(ON): 1.60 mΩ typ, 3.20 mΩ max (IS = 10 A, VGS = 2.5 V)
• Gate-source leakage current IGSS: ±1 μA max (VSS = 0 V, VGS = ±8 V)
• Total gate charge Qg: 76 nC typ (VDD = 6 V, IS = 20.0 A, VGS = 4.0 V)

Features:

• Low source-source on-resistance: RSS(ON) = 1.1 mΩ (typ.) at VGS = 3.8 V
• Low source-source on-resistance: RSS(ON) = 1.0 mΩ (typ.) at VGS = 4.5 V
• RoHS compatible
• Halogen-free

Applications:

• Battery protection circuits
• Lithium-ion battery charge and discharge control

Package:

• Weight: 4.05 mg (typ.)

• (1) Low source-source on-resistance

1. : RSS(ON) = 1.1 m Ω (typ.) (@VGS = 3.8 V)
2. : RSS(ON) = 1.0 m Ω (typ.) (@VGS = 4.5 V)

• (2) RoHS Compatible (Note 1)
• (3) Halogen-free

Note 1: The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Pulse width ≤ 10 μ s, Duty ≤ 1 %

Note 2: Device mounted on a 25 mm × 27.5 mm, t = 1.6 mm, Cu Pad: 35 μ m, 407 mm 2 , FR4 glass epoxy board

Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge.

Note: The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account.

Weight: 4.05 mg (typ.)

Weight: 4.05 mg (typ.)