STB55NF06LT4
N-channel Power MOSFETThe STB55NF06LT4 is a n-channel power mosfet from STMicroelectronics. View the full STB55NF06LT4 datasheet below including key specifications, electrical characteristics.
STB55NF06LT4 shares its datasheet with STP55NF06L, whose page lists every part number it covers.
Official STB55NF06LT4 datasheet (PDF) — the source this page was extracted from.
STB55NF06LT4 Key Specifications
| Parameter | Value |
|---|---|
| Total Gate Charge (Qg) | 27nC typ, 37nC max |
| Input Capacitance (Ciss) | 1700pF |
| Gate-Source Voltage (VGS) | ±16V |
| Drain-Source Voltage (VDS) | 60V |
| Pulsed Drain Current (IDM) | 220A |
| RDS(On) At VGS=5V, ID=27.5A | 0.016 Ω typ, 0.020 Ω max |
| RDS(On) At VGS=10V, ID=27.5A | 0.014 Ω typ, 0.018 Ω max |
| Operating Junction Temperature | -55°C to 175°C |
| Gate Threshold Voltage (VGS(Th)) | 1V min, 1.7V typ |
| Thermal Resistance Junction-Case | 1.58 °C/W |
| Single Pulse Avalanche Energy (EAS) | 300mJ |
| Thermal Resistance Junction-Ambient | 62.5 °C/W |
| Total Power Dissipation (25°C Case) | 95W |
| Continuous Drain Current (ID) At 25°C | 55A |
| Continuous Drain Current (ID) At 100°C | 39A |
STB55NF06LT4 Overview
Part: STP55NF06L, STB55NF06L, STB55NF06L-1 — STMicroelectronics
Type: N-channel Power MOSFET
Description: N-channel 60V, 0.014 Ω, 55A STripFET™ II Power MOSFET with exceptional dv/dt capability and 100% avalanche testing, featuring high packing density for low on-resistance.
Operating Conditions:
- Gate-source voltage: ±16 V
- Operating junction temperature: -55 to 175 °C
- Drain-source voltage: 60 V
Absolute Maximum Ratings:
- Max drain-source voltage: 60 V
- Max gate-source voltage: ±16 V
- Max continuous drain current: 55 A (at T_C = 25°C)
- Max junction/storage temperature: -55 to 175 °C
Key Specs:
- Drain-source breakdown voltage V(BR)DSS: 60 V (min) at I_D = 250μA, V_GS = 0
- Static drain-source on resistance R_DS(on): 0.014 Ω (typ) / 0.018 Ω (max) at V_GS = 10V, I_D = 27.5A
- Gate threshold voltage V_GS(th): 1 V (min) / 1.7 V (typ) at V_DS = V_GS, I_D = 250μA
- Total gate charge Q_g: 27 nC (typ) / 37 nC (max) at V_DD = 48V, I_D = 55A, V_GS = 4.5V
- Input capacitance C_iss: 1700 pF (typ) at V_DS = 25V, f = 1 MHz, V_GS = 0
- Turn-on delay time t_d(on): 20 ns (typ) at V_DD = 30V, I_D = 27.5A, R_G = 4.7 Ω, V_GS = 4.5V
- Forward transconductance g_fs: 30 S (typ) at V_DS = 15V, I_D = 27.5A
- Source-drain forward on voltage V_SD: 1.6 V (max) at I_SD = 55A, V_GS = 0
Features:
- Exceptional dv/dt capability
- 100% avalanche tested
- Application oriented characterization
- High packing density for low on-resistance
- Rugged avalanche characteristics
- Remarkable manufacturing reproducibility
Applications:
- Switching application
Package:
- TO-220
- D²PAK
- I²PAK (TO-262)
STB55NF06LT4 Features
| Type | V DSS | R DS(on) | I D |
|---|---|---|---|
| STP55NF06L | 60V | <0.018 Ω | 55A |
| STB55NF06L | 60V | <0.018 Ω | 55A |
| STB55NF06L-1 | 60V | <0.018 Ω | 55A |
- ■ Exceptional dv/dt capability
- ■ 100% avalanche tested
- ■ Application oriented characterization
STB55NF06LT4 Electrical Characteristics
(T CASE =25°C unless otherwise specified)
Table 3. On/off states
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-source breakdown voltage | I D = 250μA, V GS = 0 | 60 | V | ||
| I DSS | Zero gate voltage drain current (V GS = 0) | V DS = Max rating, V DS = Max rating @125°C | 1 10 | μA μA | ||
| I GSS | Gate body leakage current (V DS = 0) | V GS = ±16V | ± 100 | nA | ||
| V GS(th) | Gate threshold voltage | V DS = V GS , I D = 250μA | 1 | 1.7 | V | |
| R DS(on) | Static drain-source on resistance | V GS = 5V, I D = 27.5A V GS = 10V, I D = 27.5A | 0.016 0.014 | 0.020 0.018 | Ω Ω |
Table 4. Dynamic
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| g fs (1) | Forward transconductance | V DS =15V, I D = 27.5A | 30 | S | ||
| C iss C oss C rss | Input capacitance Output capacitance Reverse transfer capacitance | V DS =25V, f=1 MHz, V GS =0 | 1700 300 105 | pF pF pF | ||
| Q g Q gs Q gd | Total gate charge Gate-source charge Gate-drain charge | V DD =48V, I D = 55A V GS =4.5V | 27 7 10 | 37 | nC nC nC |
Table 4. Dynamic
STB55NF06LT4 Thermal Information
| R thj-case | Thermal resistance junction-case max | 1.58 | °C/W |
|---|---|---|---|
| R thj-a | Thermal resistance junction-ambient max | 62.5 | °C/W |
| T l | Maximum lead temperature for soldering purpose | 300 | °C |
STB55NF06LT4 Package Information
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| STB55NF06L-1 | STMicroelectronics | I 2 PAK |
| STP55NF06L | STMicroelectronics | TO-220 |
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All MOSFETs datasheetsAll STMicroelectronics datasheets (808)
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