STB55NF06LT4

N-channel Power MOSFET

The STB55NF06LT4 is a n-channel power mosfet from STMicroelectronics. View the full STB55NF06LT4 datasheet below including electrical characteristics.

Manufacturer

STMicroelectronics

Overview

Part: STP55NF06L, STB55NF06L, STB55NF06L-1 — STMicroelectronics

Type: N-channel Power MOSFET

Description: N-channel 60V, 0.014 Ω, 55A STripFET™ II Power MOSFET with exceptional dv/dt capability and 100% avalanche testing, featuring high packing density for low on-resistance.

Operating Conditions:

Gate-source voltage: ±16 V
Operating junction temperature: -55 to 175 °C
Drain-source voltage: 60 V

Absolute Maximum Ratings:

Max drain-source voltage: 60 V
Max gate-source voltage: ±16 V
Max continuous drain current: 55 A (at T_C = 25°C)
Max junction/storage temperature: -55 to 175 °C

Key Specs:

Drain-source breakdown voltage V(BR)DSS: 60 V (min) at I_D = 250μA, V_GS = 0
Static drain-source on resistance R_DS(on): 0.014 Ω (typ) / 0.018 Ω (max) at V_GS = 10V, I_D = 27.5A
Gate threshold voltage V_GS(th): 1 V (min) / 1.7 V (typ) at V_DS = V_GS, I_D = 250μA
Total gate charge Q_g: 27 nC (typ) / 37 nC (max) at V_DD = 48V, I_D = 55A, V_GS = 4.5V
Input capacitance C_iss: 1700 pF (typ) at V_DS = 25V, f = 1 MHz, V_GS = 0
Turn-on delay time t_d(on): 20 ns (typ) at V_DD = 30V, I_D = 27.5A, R_G = 4.7 Ω, V_GS = 4.5V
Forward transconductance g_fs: 30 S (typ) at V_DS = 15V, I_D = 27.5A
Source-drain forward on voltage V_SD: 1.6 V (max) at I_SD = 55A, V_GS = 0

Features:

Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
High packing density for low on-resistance
Rugged avalanche characteristics
Remarkable manufacturing reproducibility

Applications:

Switching application

Package:

TO-220
D²PAK
I²PAK (TO-262)

Features

Type	V DSS	R DS(on)	I D
STP55NF06L	60V	<0.018 Ω	55A
STB55NF06L	60V	<0.018 Ω	55A
STB55NF06L-1	60V	<0.018 Ω	55A

■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization

Electrical Characteristics

(T CASE =25°C unless otherwise specified)

Table 3. On/off states

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
V (BR)DSS	Drain-source breakdown voltage	I D = 250μA, V GS = 0	60			V
I DSS	Zero gate voltage drain current (V GS = 0)	V DS = Max rating, V DS = Max rating @125°C			1 10	μA μA
I GSS	Gate body leakage current (V DS = 0)	V GS = ±16V			± 100	nA
V GS(th)	Gate threshold voltage	V DS = V GS , I D = 250μA	1	1.7		V
R DS(on)	Static drain-source on resistance	V GS = 5V, I D = 27.5A V GS = 10V, I D = 27.5A		0.016 0.014	0.020 0.018	Ω Ω

Table 4. Dynamic

Symbol	Parameter	Test conditions	Typ.	Max.	Unit
g fs (1)	Forward transconductance	V DS =15V, I D = 27.5A	30		S
C iss C oss C rss	Input capacitance Output capacitance Reverse transfer capacitance	V DS =25V, f=1 MHz, V GS =0	1700 300 105		pF pF pF
Q g Q gs Q gd	Total gate charge Gate-source charge Gate-drain charge	V DD =48V, I D = 55A V GS =4.5V	27 7 10	37	nC nC nC

Table 4. Dynamic

Thermal Information

R thj-case	Thermal resistance junction-case max	1.58	°C/W
R thj-a	Thermal resistance junction-ambient max	62.5	°C/W
T l	Maximum lead temperature for soldering purpose	300	°C

Package Information

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
STB55NF06L-1	STMicroelectronics	I 2 PAK
STP55NF06L	STMicroelectronics	TO-220

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