STP55NF06L
N-channel Power MOSFETThe STP55NF06L is a n-channel power mosfet from STMicroelectronics. View the full STP55NF06L datasheet below including pinout, electrical characteristics.
Manufacturer
STMicroelectronics
Category
N-channel Power MOSFET
Package
TO-220, D 2 PAK, I 2 PAK
Overview
Part: STP55NF06L, STB55NF06L, STB55NF06L-1 — STMicroelectronics
Type: N-channel Power MOSFET
Description: N-channel 60V, 0.014 Ω, 55A STripFET™ II Power MOSFET with exceptional dv/dt capability and 100% avalanche testing, featuring high packing density for low on-resistance.
Operating Conditions:
- Gate-source voltage: ±16 V
- Operating junction temperature: -55 to 175 °C
- Drain-source voltage: 60 V
Absolute Maximum Ratings:
- Max drain-source voltage: 60 V
- Max gate-source voltage: ±16 V
- Max continuous drain current: 55 A (at T_C = 25°C)
- Max junction/storage temperature: -55 to 175 °C
Key Specs:
- Drain-source breakdown voltage V(BR)DSS: 60 V (min) at I_D = 250μA, V_GS = 0
- Static drain-source on resistance R_DS(on): 0.014 Ω (typ) / 0.018 Ω (max) at V_GS = 10V, I_D = 27.5A
- Gate threshold voltage V_GS(th): 1 V (min) / 1.7 V (typ) at V_DS = V_GS, I_D = 250μA
- Total gate charge Q_g: 27 nC (typ) / 37 nC (max) at V_DD = 48V, I_D = 55A, V_GS = 4.5V
- Input capacitance C_iss: 1700 pF (typ) at V_DS = 25V, f = 1 MHz, V_GS = 0
- Turn-on delay time t_d(on): 20 ns (typ) at V_DD = 30V, I_D = 27.5A, R_G = 4.7 Ω, V_GS = 4.5V
- Forward transconductance g_fs: 30 S (typ) at V_DS = 15V, I_D = 27.5A
- Source-drain forward on voltage V_SD: 1.6 V (max) at I_SD = 55A, V_GS = 0
Features:
- Exceptional dv/dt capability
- 100% avalanche tested
- Application oriented characterization
- High packing density for low on-resistance
- Rugged avalanche characteristics
- Remarkable manufacturing reproducibility
Applications:
- Switching application
Package:
- TO-220
- D²PAK
- I²PAK (TO-262)
Features
| Type | V DSS | R DS(on) | I D |
|---|---|---|---|
| STP55NF06L | 60V | <0.018 Ω | 55A |
| STB55NF06L | 60V | <0.018 Ω | 55A |
| STB55NF06L-1 | 60V | <0.018 Ω | 55A |
- ■ Exceptional dv/dt capability
- ■ 100% avalanche tested
- ■ Application oriented characterization
Pin Configuration
STP55NF06L – TO-220 Package
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | Gate (G) | I | Gate terminal |
| 2 | Drain (D) | O | Drain terminal |
| 3 | Source (S) | O | Source terminal |
Notes
- STP55NF06L is an N-channel power MOSFET in TO-220 package (3-pin configuration).
- Pin 2 (Drain) is typically connected to the metal tab/case for improved thermal dissipation.
- The device includes an integral body diode between Source and Drain.
- Absolute maximum ratings: VDS = 60V, VGS = ±16V, ID = 55A (continuous at 25°C).
Electrical Characteristics
(T CASE =25°C unless otherwise specified)
Table 3. On/off states
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-source breakdown voltage | I D = 250μA, V GS = 0 | 60 | V | ||
| I DSS | Zero gate voltage drain current (V GS = 0) | V DS = Max rating, V DS = Max rating @125°C | 1 10 | μA μA | ||
| I GSS | Gate body leakage current (V DS = 0) | V GS = ±16V | ± 100 | nA | ||
| V GS(th) | Gate threshold voltage | V DS = V GS , I D = 250μA | 1 | 1.7 | V | |
| R DS(on) | Static drain-source on resistance | V GS = 5V, I D = 27.5A V GS = 10V, I D = 27.5A | 0.016 0.014 | 0.020 0.018 | Ω Ω |
Table 4. Dynamic
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| g fs (1) | Forward transconductance | V DS =15V, I D = 27.5A | 30 | S | ||
| C iss C oss C rss | Input capacitance Output capacitance Reverse transfer capacitance | V DS =25V, f=1 MHz, V GS =0 | 1700 300 105 | pF pF pF | ||
| Q g Q gs Q gd | Total gate charge Gate-source charge Gate-drain charge | V DD =48V, I D = 55A V GS =4.5V | 27 7 10 | 37 | nC nC nC |
Table 4. Dynamic
Thermal Information
| R thj-case | Thermal resistance junction-case max | 1.58 | °C/W |
|---|---|---|---|
| R thj-a | Thermal resistance junction-ambient max | 62.5 | °C/W |
| T l | Maximum lead temperature for soldering purpose | 300 | °C |
Package Information
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
Ordering Information
| Part number | Package | Temperature Range | Packaging |
|---|---|---|---|
| STP55NF06L | TO-220 | -55 to 175 °C | Tube |
| STB55NF06LT4 | D 2 PAK | -55 to 175 °C | Tape & reel |
| STB55NF06L-1 | I 2 PAK | -55 to 175 °C | Tube |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| STB55NF06L-1 | STMicroelectronics | I 2 PAK |
| STB55NF06LT4 | STMicroelectronics | D 2 PAK |
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