STP55NF06L
N-channel Power MOSFETThe STP55NF06L is a n-channel power mosfet from STMicroelectronics. View the full STP55NF06L datasheet below including key specifications, pinout, electrical characteristics.
Official STP55NF06L datasheet (PDF) — the source this page was extracted from.
STP55NF06L Key Specifications
| Parameter | Value |
|---|---|
| Drain-source breakdown voltage V(BR)DSS | 60 V (min) at I_D = 250μA, V_GS = 0 |
| Static drain-source on resistance R_DS(on) | 0.014 Ω (typ) / 0.018 Ω (max) at V_GS = 10V, I_D = 27.5A |
| Gate threshold voltage V_GS(th) | 1 V (min) / 1.7 V (typ) at V_DS = V_GS, I_D = 250μA |
| Total gate charge Q_g | 27 nC (typ) / 37 nC (max) at V_DD = 48V, I_D = 55A, V_GS = 4.5V |
| Input capacitance C_iss | 1700 pF (typ) at V_DS = 25V, f = 1 MHz, V_GS = 0 |
| Turn-on delay time t_d(on) | 20 ns (typ) at V_DD = 30V, I_D = 27.5A, R_G = 4.7 Ω, V_GS = 4.5V |
| Forward transconductance g_fs | 30 S (typ) at V_DS = 15V, I_D = 27.5A |
| Source-drain forward on voltage V_SD | 1.6 V (max) at I_SD = 55A, V_GS = 0 |
STP55NF06L Overview
Part: STP55NF06L, STB55NF06L, STB55NF06L-1 — STMicroelectronics
Type: N-channel Power MOSFET
Description: N-channel 60V, 0.014 Ω, 55A STripFET™ II Power MOSFET with exceptional dv/dt capability and 100% avalanche testing, featuring high packing density for low on-resistance.
Operating Conditions:
- Gate-source voltage: ±16 V
- Operating junction temperature: -55 to 175 °C
- Drain-source voltage: 60 V
Absolute Maximum Ratings:
- Max drain-source voltage: 60 V
- Max gate-source voltage: ±16 V
- Max continuous drain current: 55 A (at T_C = 25°C)
- Max junction/storage temperature: -55 to 175 °C
Key Specs:
- Drain-source breakdown voltage V(BR)DSS: 60 V (min) at I_D = 250μA, V_GS = 0
- Static drain-source on resistance R_DS(on): 0.014 Ω (typ) / 0.018 Ω (max) at V_GS = 10V, I_D = 27.5A
- Gate threshold voltage V_GS(th): 1 V (min) / 1.7 V (typ) at V_DS = V_GS, I_D = 250μA
- Total gate charge Q_g: 27 nC (typ) / 37 nC (max) at V_DD = 48V, I_D = 55A, V_GS = 4.5V
- Input capacitance C_iss: 1700 pF (typ) at V_DS = 25V, f = 1 MHz, V_GS = 0
- Turn-on delay time t_d(on): 20 ns (typ) at V_DD = 30V, I_D = 27.5A, R_G = 4.7 Ω, V_GS = 4.5V
- Forward transconductance g_fs: 30 S (typ) at V_DS = 15V, I_D = 27.5A
- Source-drain forward on voltage V_SD: 1.6 V (max) at I_SD = 55A, V_GS = 0
Features:
- Exceptional dv/dt capability
- 100% avalanche tested
- Application oriented characterization
- High packing density for low on-resistance
- Rugged avalanche characteristics
- Remarkable manufacturing reproducibility
Applications:
- Switching application
Package:
- TO-220
- D²PAK
- I²PAK (TO-262)
STP55NF06L Features
| Type | V DSS | R DS(on) | I D |
|---|---|---|---|
| STP55NF06L | 60V | <0.018 Ω | 55A |
| STB55NF06L | 60V | <0.018 Ω | 55A |
| STB55NF06L-1 | 60V | <0.018 Ω | 55A |
- ■ Exceptional dv/dt capability
- ■ 100% avalanche tested
- ■ Application oriented characterization
STP55NF06L Pin Configuration
STP55NF06L – TO-220 Package
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | Gate (G) | I | Gate terminal |
| 2 | Drain (D) | O | Drain terminal |
| 3 | Source (S) | O | Source terminal |
Notes
- STP55NF06L is an N-channel power MOSFET in TO-220 package (3-pin configuration).
- Pin 2 (Drain) is typically connected to the metal tab/case for improved thermal dissipation.
- The device includes an integral body diode between Source and Drain.
- Absolute maximum ratings: VDS = 60V, VGS = ±16V, ID = 55A (continuous at 25°C).
STP55NF06L Electrical Characteristics
(T CASE =25°C unless otherwise specified)
Table 3. On/off states
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-source breakdown voltage | I D = 250μA, V GS = 0 | 60 | V | ||
| I DSS | Zero gate voltage drain current (V GS = 0) | V DS = Max rating, V DS = Max rating @125°C | 1 10 | μA μA | ||
| I GSS | Gate body leakage current (V DS = 0) | V GS = ±16V | ± 100 | nA | ||
| V GS(th) | Gate threshold voltage | V DS = V GS , I D = 250μA | 1 | 1.7 | V | |
| R DS(on) | Static drain-source on resistance | V GS = 5V, I D = 27.5A V GS = 10V, I D = 27.5A | 0.016 0.014 | 0.020 0.018 | Ω Ω |
Table 4. Dynamic
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| g fs (1) | Forward transconductance | V DS =15V, I D = 27.5A | 30 | S | ||
| C iss C oss C rss | Input capacitance Output capacitance Reverse transfer capacitance | V DS =25V, f=1 MHz, V GS =0 | 1700 300 105 | pF pF pF | ||
| Q g Q gs Q gd | Total gate charge Gate-source charge Gate-drain charge | V DD =48V, I D = 55A V GS =4.5V | 27 7 10 | 37 | nC nC nC |
Table 4. Dynamic
STP55NF06L Thermal Information
| R thj-case | Thermal resistance junction-case max | 1.58 | °C/W |
|---|---|---|---|
| R thj-a | Thermal resistance junction-ambient max | 62.5 | °C/W |
| T l | Maximum lead temperature for soldering purpose | 300 | °C |
STP55NF06L Package Information
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
STP55NF06L Ordering Information
| Part number | Package | Temperature Range | Packaging |
|---|---|---|---|
| STP55NF06L | TO-220 | -55 to 175 °C | Tube |
| STB55NF06LT4 | D 2 PAK | -55 to 175 °C | Tape & reel |
| STB55NF06L-1 | I 2 PAK | -55 to 175 °C | Tube |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| STB55NF06L-1 | STMicroelectronics | I 2 PAK |
| STB55NF06LT4 | STMicroelectronics | D 2 PAK |
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- STL110N10F7 – STMicroelectronics, N-channel Power MOSFET
All MOSFETs datasheetsAll STMicroelectronics datasheets (808)
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