TPN6R303NC,LQ

N-channel MOS (U-MOS) MOSFET

The TPN6R303NC,LQ is a n-channel mos (u-mos) mosfet from Toshiba Semiconductor and Storage. View the full TPN6R303NC,LQ datasheet below including key specifications, absolute maximum ratings.

Manufacturer

Toshiba Semiconductor and Storage

Key Specifications

Parameter	Value
Continuous Drain Current	20A (Ta)
Drain-Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg)	24 nC @ 10 V
Input Capacitance (Ciss)	1370 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Package / Case	8-PowerVDFN
Packaging	MouseReel
Packaging	MouseReel
Power Dissipation (Max)	700mW (Ta), 19W (Tc)
Rds(on)	6.3mOhm @ 10A, 10V Ω
Standard Pack Qty	3000
Standard Pack Qty	3000
Supplier Device Package	8-TSON Advance (3.1x3.1)
Supplier Device Package	8-TSON Advance (3.1x3.1)
Diode Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Gate Threshold Voltage	2.3V @ 200µA

Overview

Part: TPN6R303NC — Toshiba

Type: N-channel MOS (U-MOS) MOSFET

Description: 30 V, 43 A N-channel MOSFET with 5.2 mΩ (typ.) on-resistance at VGS = 10 V.

Operating Conditions:

Drain-source voltage: up to 30 V
Gate-source voltage: ±20 V
Operating temperature: -55 to 150 °C

Absolute Maximum Ratings:

Drain-source voltage (VDSS): 30 V
Gate-source voltage (VGSS): ±20 V
Drain current (ID): 43 A (DC, Silicon limit)
Channel temperature (Tch): 150 °C
Storage temperature (Tstg): -55 to 150 °C

Key Specs:

Drain-source on-resistance (RDS(ON)): 5.2 mΩ (typ.) at VGS = 10 V, ID = 10 A
Drain-source on-resistance (RDS(ON)): 6.9 mΩ (typ.) at VGS = 4.5 V, ID = 10 A
Drain cut-off current (IDSS): 10 μA (max) at VDS = 30 V, VGS = 0 V
Gate threshold voltage (Vth): 1.3 V (min) to 2.3 V (max) at VDS = 10 V, ID = 0.2 mA
Input capacitance (Ciss): 1370 pF (typ.) at VDS = 15 V, VGS = 0 V, f = 1 MHz
Total gate charge (Qg): 24 nC (typ.) at VDD ≈ 24 V, VGS = 10 V, ID = 20 A
Rise time (tr): 6 ns (typ.)
Fall time (tf): 14 ns (typ.)

Features:

Small, thin package
Low drain-source on-resistance: RDS(ON) = 5.2 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)

Applications:

Lithium-Ion Secondary Batteries
Power Management Switches

Package:

Weight: 0.02 g (typ.)

Features

(1) Small, thin package
(2) Low drain-source on-resistance: RDS(ON) = 5.2 m Ω (typ.) (VGS = 10 V)
(3) Low leakage current: IDSS = 10 μ A (max) (VDS = 30 V)
(4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)

Applications

Lithium-Ion Secondary Batteries
Power Management Switches

Absolute Maximum Ratings

Characteristics	Characteristics	Characteristics	Symbol	Rating	Unit
Drain-source voltage			V DSS	30	V
Gate-source voltage			V GSS	± 20	V
Drain current (DC)	(Silicon limit)	(Note 1)	I D	43	A
Drain current (DC)		(Note 1)	I D	20	A
Drain current (pulsed)	(1 ms)	(Note 1)	I DP	107	A
Power dissipation	(T c = 25 )		P D	19	W
Power dissipation	(t = 10 s)	(Note 2)	P D	1.9	W
Power dissipation	(t = 10 s)	(Note 3)	P D	0.7	W
Single-pulse avalanche energy		(Note 4)	E AS	51	mJ
Avalanche current			I AR	20	A
Channel temperature			T ch	150
Storage temperature			T stg	-55 to 150

Thermal Information

Characteristics	Characteristics	Characteristics	Symbol	Max	Unit
Channel-to-case thermal resistance	(T c = 25 )	(T c = 25 )	R th(ch-c)	6.57	/W
Channel-to-ambient thermal resistance	(t = 10 s)	(Note 2)	R th(ch-a)	65.7
Channel-to-ambient thermal resistance	(t = 10 s)	(Note 3)	R th(ch-a)	178

Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1

Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2

Note 4: VDD = 24 V, Tch = 25 (initial), L = 0.099 mH, IAR = 20 A

Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a)

Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b)

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

Package Information

Weight: 0.02 g (typ.)

Weight: 0.02 g (typ.)

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
TPN6R303NC	Toshiba	—

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