TPN6R303NC,LQ
N-channel MOS (U-MOS) MOSFETThe TPN6R303NC,LQ is a n-channel mos (u-mos) mosfet from Toshiba Semiconductor and Storage. View the full TPN6R303NC,LQ datasheet below including key specifications, absolute maximum ratings.
Official TPN6R303NC,LQ datasheet (PDF) — the source this page was extracted from.
TPN6R303NC,LQ Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 20A (Ta) |
| Drain-Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 24 nC @ 10 V |
| Input Capacitance (Ciss) | 1370 pF @ 15 V |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package / Case | 8-PowerVDFN |
| Packaging | MouseReel |
| Power Dissipation (Max) | 700mW (Ta), 19W (Tc) |
| Rds(on) | 6.3mOhm @ 10A, 10V Ω |
| Standard Pack Qty | 3000 |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 2.3V @ 200µA |
TPN6R303NC,LQ Overview
Part: TPN6R303NC — Toshiba
Type: N-channel MOS (U-MOS) MOSFET
Description: 30 V, 43 A N-channel MOSFET with 5.2 mΩ (typ.) on-resistance at VGS = 10 V.
Operating Conditions:
- Drain-source voltage: up to 30 V
- Gate-source voltage: ±20 V
- Operating temperature: -55 to 150 °C
Absolute Maximum Ratings:
- Drain-source voltage (VDSS): 30 V
- Gate-source voltage (VGSS): ±20 V
- Drain current (ID): 43 A (DC, Silicon limit)
- Channel temperature (Tch): 150 °C
- Storage temperature (Tstg): -55 to 150 °C
Key Specs:
- Drain-source on-resistance (RDS(ON)): 5.2 mΩ (typ.) at VGS = 10 V, ID = 10 A
- Drain-source on-resistance (RDS(ON)): 6.9 mΩ (typ.) at VGS = 4.5 V, ID = 10 A
- Drain cut-off current (IDSS): 10 μA (max) at VDS = 30 V, VGS = 0 V
- Gate threshold voltage (Vth): 1.3 V (min) to 2.3 V (max) at VDS = 10 V, ID = 0.2 mA
- Input capacitance (Ciss): 1370 pF (typ.) at VDS = 15 V, VGS = 0 V, f = 1 MHz
- Total gate charge (Qg): 24 nC (typ.) at VDD ≈ 24 V, VGS = 10 V, ID = 20 A
- Rise time (tr): 6 ns (typ.)
- Fall time (tf): 14 ns (typ.)
Features:
- Small, thin package
- Low drain-source on-resistance: RDS(ON) = 5.2 mΩ (typ.) (VGS = 10 V)
- Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
- Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
Applications:
- Lithium-Ion Secondary Batteries
- Power Management Switches
Package:
- Weight: 0.02 g (typ.)
TPN6R303NC,LQ Features
- (1) Small, thin package
- (2) Low drain-source on-resistance: RDS(ON) = 5.2 m Ω (typ.) (VGS = 10 V)
- (3) Low leakage current: IDSS = 10 μ A (max) (VDS = 30 V)
- (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
TPN6R303NC,LQ Applications
- Lithium-Ion Secondary Batteries
- Power Management Switches
TPN6R303NC,LQ Absolute Maximum Ratings
| Characteristics | Characteristics | Characteristics | Symbol | Rating | Unit |
|---|---|---|---|---|---|
| Drain-source voltage | V DSS | 30 | V | ||
| Gate-source voltage | V GSS | ± 20 | V | ||
| Drain current (DC) | (Silicon limit) | (Note 1) | I D | 43 | A |
| Drain current (DC) | (Note 1) | I D | 20 | A | |
| Drain current (pulsed) | (1 ms) | (Note 1) | I DP | 107 | A |
| Power dissipation | (T c = 25 ) | P D | 19 | W | |
| Power dissipation | (t = 10 s) | (Note 2) | P D | 1.9 | W |
| Power dissipation | (t = 10 s) | (Note 3) | P D | 0.7 | W |
| Single-pulse avalanche energy | (Note 4) | E AS | 51 | mJ | |
| Avalanche current | I AR | 20 | A | ||
| Channel temperature | T ch | 150 | |||
| Storage temperature | T stg | -55 to 150 |
TPN6R303NC,LQ Thermal Information
| Characteristics | Characteristics | Characteristics | Symbol | Max | Unit |
|---|---|---|---|---|---|
| Channel-to-case thermal resistance | (T c = 25 ) | (T c = 25 ) | R th(ch-c) | 6.57 | /W |
| Channel-to-ambient thermal resistance | (t = 10 s) | (Note 2) | R th(ch-a) | 65.7 | |
| Channel-to-ambient thermal resistance | (t = 10 s) | (Note 3) | R th(ch-a) | 178 |
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: VDD = 24 V, Tch = 25 (initial), L = 0.099 mH, IAR = 20 A
Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
TPN6R303NC,LQ Package Information
Weight: 0.02 g (typ.)
Weight: 0.02 g (typ.)
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| TPN6R303NC | Toshiba | — |
More part numbers on this datasheet
Their pages show this same datasheet. Some are linked through their part family rather than checked part by part, so confirm the exact part in the ordering information.
Other MOSFETs
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- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- STL110N10F7 – STMicroelectronics, N-channel Power MOSFET
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