TPN6R303NC

: High ESD protection

MOSFET

The TPN6R303NC is a mosfet from Toshiba. : High ESD protection. View the full TPN6R303NC datasheet below including key specifications.

Official TPN6R303NC datasheet (PDF) — the source this page was extracted from.

Manufacturer

Toshiba

TPN6R303NC Key Specifications

Parameter	Value
Continuous Drain Current	20A (Ta)
Drain-Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg)	24 nC @ 10 V
Input Capacitance (Ciss)	1370 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Package / Case	8-PowerVDFN
Packaging	MouseReel
Power Dissipation (Max)	700mW (Ta), 19W (Tc)
Rds(on)	6.3mOhm @ 10A, 10V Ω
Standard Pack Qty	3000
Supplier Device Package	8-TSON Advance (3.1x3.1)
Diode Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Gate Threshold Voltage	2.3V @ 200µA

TPN6R303NC Overview

Part: U-MOS VIII-H Series — Toshiba Type: N-Channel Power MOSFETs Description: High-efficiency MOSFET series designed for switching power supply applications, featuring low on-resistance (less than 1 mΩ) and high-speed switching due to a Gen-8 trench MOS process.

Operating Conditions:

Supply voltage: 12 V to 250 V (VDSS range for Low-VDSS MOSFETs)
On-resistance: less than 1 mΩ (TPHR9003NL: 0.77 mΩ at VGS = 10 V, ID = 30 A)
Switching speed: 56% faster than U-MOS VII-H Series

Absolute Maximum Ratings:

Max drain-source voltage (VDSS): 12 V to 250 V (for Low-VDSS MOSFETs)
Max gate-source voltage (VGSS): ±8 V (for SSM3J56MFV, SSM3J46CTB)
Max drain current (ID): -0.8 A (for SSM3J56MFV), -2.0 A (for SSM3J46CTB)

Key Specs:

On-resistance (RDS(ON)): 0.77 mΩ (TPHR9003NL, VGS = 10 V, ID = 30 A)
Input capacitance (Ciss): 100 pF (SSM3J56MFV), 290 pF (SSM3J46CTB)
Drain-Source Voltage (VDSS): 12 V to 250 V (Low-VDSS MOSFETs)
Gate-Source Voltage (VGSS): ±8 V (SSM3J56MFV, SSM3J46CTB)
Drain Current (ID): -0.8 A (SSM3J56MFV), -2.0 A (SSM3J46CTB)
On-resistance (RDS(ON)): 103 mΩ (SSM3J46CTB, VGS = 4.5 V)

Features:

Fabricated with a Gen-8 trench MOS process
Significantly better trade-offs between on-resistance and input capacitance
High avalanche ruggedness
Suppresses switching noise and ringing more effectively than U-MOS VII-H Series
Low on-resistance per die area (RonA)

Applications:

AC-DC power supplies (secondary side)
DC-DC power supplies
Notebook PC adapters
Game consoles, servers, desktop PCs, flat-panel displays
Communication equipment, data centers
Mobile devices (charger circuits)
Load switch and battery pack protection

Package:

VESM 1.2 x 1.2 x 0.5 mm
CST3B 0.8 x 1.2 x 0.48 mm
WCST6

TPN6R303NC Features

O Fabricated with a Gen-8 trench MOS process designed for various power supply applications
O On-resistance, RDS(ON), less than 1 m 1 TPHR9003NL: RDS(ON) = 0.77 m 1 (VGS = 10 V, ID = 30 A)
O Provides significantly better trade-offs between on-resistance and input capacitance
O Offers high avalanche ruggedness
O Available in various packages

TPN6R303NC Applications

Page 7

High-efficiency MOSFET series for AC-DC and DC-DC power supplies, fabricated using the latest Gen-8 trench-gate process

O Features and available packages
O Various power supply topologies and recommended MOSFETs
O Product lineup

Other MOSFETs

20N06D – onsemi, Power MOSFET
IRF540NPBF – Infineon Technologies, Power MOSFET
AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
IRF540N – Infineon Technologies, Power MOSFET

All MOSFETs datasheets All Toshiba datasheets (24)

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