TPN6R303NC

: High ESD protection

MOSFET

The TPN6R303NC is a mosfet from Toshiba. : High ESD protection. View the full TPN6R303NC datasheet below including key specifications.

Manufacturer

Toshiba

Key Specifications

Parameter	Value
Continuous Drain Current	20A (Ta)
Drain-Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg)	24 nC @ 10 V
Input Capacitance (Ciss)	1370 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Package / Case	8-PowerVDFN
Packaging	MouseReel
Packaging	MouseReel
Packaging	MouseReel
Power Dissipation (Max)	700mW (Ta), 19W (Tc)
Rds(on)	6.3mOhm @ 10A, 10V Ω
Standard Pack Qty	3000
Standard Pack Qty	3000
Standard Pack Qty	3000
Supplier Device Package	8-TSON Advance (3.1x3.1)
Supplier Device Package	8-TSON Advance (3.1x3.1)
Supplier Device Package	8-TSON Advance (3.1x3.1)
Diode Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Gate Threshold Voltage	2.3V @ 200µA

Overview

Part: U-MOS VIII-H Series — Toshiba Type: N-Channel Power MOSFETs Description: High-efficiency MOSFET series designed for switching power supply applications, featuring low on-resistance (less than 1 mΩ) and high-speed switching due to a Gen-8 trench MOS process.

Operating Conditions:

Supply voltage: 12 V to 250 V (VDSS range for Low-VDSS MOSFETs)
On-resistance: less than 1 mΩ (TPHR9003NL: 0.77 mΩ at VGS = 10 V, ID = 30 A)
Switching speed: 56% faster than U-MOS VII-H Series

Absolute Maximum Ratings:

Max drain-source voltage (VDSS): 12 V to 250 V (for Low-VDSS MOSFETs)
Max gate-source voltage (VGSS): ±8 V (for SSM3J56MFV, SSM3J46CTB)
Max drain current (ID): -0.8 A (for SSM3J56MFV), -2.0 A (for SSM3J46CTB)

Key Specs:

On-resistance (RDS(ON)): 0.77 mΩ (TPHR9003NL, VGS = 10 V, ID = 30 A)
Input capacitance (Ciss): 100 pF (SSM3J56MFV), 290 pF (SSM3J46CTB)
Drain-Source Voltage (VDSS): 12 V to 250 V (Low-VDSS MOSFETs)
Gate-Source Voltage (VGSS): ±8 V (SSM3J56MFV, SSM3J46CTB)
Drain Current (ID): -0.8 A (SSM3J56MFV), -2.0 A (SSM3J46CTB)
On-resistance (RDS(ON)): 103 mΩ (SSM3J46CTB, VGS = 4.5 V)

Features:

Fabricated with a Gen-8 trench MOS process
Significantly better trade-offs between on-resistance and input capacitance
High avalanche ruggedness
Suppresses switching noise and ringing more effectively than U-MOS VII-H Series
Low on-resistance per die area (RonA)

Applications:

AC-DC power supplies (secondary side)
DC-DC power supplies
Notebook PC adapters
Game consoles, servers, desktop PCs, flat-panel displays
Communication equipment, data centers
Mobile devices (charger circuits)
Load switch and battery pack protection

Package:

VESM 1.2 x 1.2 x 0.5 mm
CST3B 0.8 x 1.2 x 0.48 mm
WCST6

Features

O Fabricated with a Gen-8 trench MOS process designed for various power supply applications
O On-resistance, RDS(ON), less than 1 m 1 TPHR9003NL: RDS(ON) = 0.77 m 1 (VGS = 10 V, ID = 30 A)
O Provides significantly better trade-offs between on-resistance and input capacitance
O Offers high avalanche ruggedness
O Available in various packages

Applications

Page 7

High-efficiency MOSFET series for AC-DC and DC-DC power supplies, fabricated using the latest Gen-8 trench-gate process

O Features and available packages
O Various power supply topologies and recommended MOSFETs
O Product lineup

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