TPN6R303NC,LQ(S

The TPN6R303NC,LQ(S is an electronic component from Toshiba. View the full TPN6R303NC,LQ(S datasheet below including absolute maximum ratings.

Manufacturer

Toshiba

Package

TSON-8(3.1x3.1)

Overview

Part: TPN6R303NC — Toshiba

Type: N-channel MOS (U-MOS) MOSFET

Description: 30 V, 43 A N-channel MOSFET with 5.2 mΩ (typ.) on-resistance at VGS = 10 V.

Operating Conditions:

Drain-source voltage: up to 30 V
Gate-source voltage: ±20 V
Operating temperature: -55 to 150 °C

Absolute Maximum Ratings:

Drain-source voltage (VDSS): 30 V
Gate-source voltage (VGSS): ±20 V
Drain current (ID): 43 A (DC, Silicon limit)
Channel temperature (Tch): 150 °C
Storage temperature (Tstg): -55 to 150 °C

Key Specs:

Drain-source on-resistance (RDS(ON)): 5.2 mΩ (typ.) at VGS = 10 V, ID = 10 A
Drain-source on-resistance (RDS(ON)): 6.9 mΩ (typ.) at VGS = 4.5 V, ID = 10 A
Drain cut-off current (IDSS): 10 μA (max) at VDS = 30 V, VGS = 0 V
Gate threshold voltage (Vth): 1.3 V (min) to 2.3 V (max) at VDS = 10 V, ID = 0.2 mA
Input capacitance (Ciss): 1370 pF (typ.) at VDS = 15 V, VGS = 0 V, f = 1 MHz
Total gate charge (Qg): 24 nC (typ.) at VDD ≈ 24 V, VGS = 10 V, ID = 20 A
Rise time (tr): 6 ns (typ.)
Fall time (tf): 14 ns (typ.)

Features:

Small, thin package
Low drain-source on-resistance: RDS(ON) = 5.2 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)

Applications:

Lithium-Ion Secondary Batteries
Power Management Switches

Package:

Weight: 0.02 g (typ.)

Features

(1) Small, thin package
(2) Low drain-source on-resistance: RDS(ON) = 5.2 m Ω (typ.) (VGS = 10 V)
(3) Low leakage current: IDSS = 10 μ A (max) (VDS = 30 V)
(4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)

Applications

Lithium-Ion Secondary Batteries
Power Management Switches

Absolute Maximum Ratings

Characteristics	Characteristics	Characteristics	Symbol	Rating	Unit
Drain-source voltage			V DSS	30	V
Gate-source voltage			V GSS	± 20	V
Drain current (DC)	(Silicon limit)	(Note 1)	I D	43	A
Drain current (DC)		(Note 1)	I D	20	A
Drain current (pulsed)	(1 ms)	(Note 1)	I DP	107	A
Power dissipation	(T c = 25 )		P D	19	W
Power dissipation	(t = 10 s)	(Note 2)	P D	1.9	W
Power dissipation	(t = 10 s)	(Note 3)	P D	0.7	W
Single-pulse avalanche energy		(Note 4)	E AS	51	mJ
Avalanche current			I AR	20	A
Channel temperature			T ch	150
Storage temperature			T stg	-55 to 150

Thermal Information

Characteristics	Characteristics	Characteristics	Symbol	Max	Unit
Channel-to-case thermal resistance	(T c = 25 )	(T c = 25 )	R th(ch-c)	6.57	/W
Channel-to-ambient thermal resistance	(t = 10 s)	(Note 2)	R th(ch-a)	65.7
Channel-to-ambient thermal resistance	(t = 10 s)	(Note 3)	R th(ch-a)	178

Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1

Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2

Note 4: VDD = 24 V, Tch = 25 (initial), L = 0.099 mH, IAR = 20 A

Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a)

Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b)

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

Package Information

Weight: 0.02 g (typ.)

Weight: 0.02 g (typ.)

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
TPN6R303NC	Toshiba	—
TPN6R303NC,LQ	Toshiba Semiconductor and Storage	8-PowerVDFN

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