SI2337DS-T1-E3
P-Channel Power MOSFETThe SI2337DS-T1-E3 is a p-channel power mosfet from Vishay Intertechnology. View the full SI2337DS-T1-E3 datasheet below including key specifications.
SI2337DS-T1-E3 shares its datasheet with SI2337DS, whose page lists every part number it covers.
Official SI2337DS-T1-E3 datasheet (PDF) — the source this page was extracted from.
SI2337DS-T1-E3 Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 2.2A (Tc) |
| Drain-Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) | 17 nC @ 10 V |
| Input Capacitance (Ciss) | 500 pF @ 40 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power Dissipation (Max) | 760mW (Ta), 2.5W (Tc) |
| Rds(on) | 270mOhm @ 1.2A, 10V Ω |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 4V @ 250µA |
SI2337DS-T1-E3 Overview
Part: Si2337DS — Vishay Siliconix
Type: P-Channel Power MOSFET (TrenchFET)
Description: -80 V P-channel MOSFET with 0.270 Ω max RDS(on) at VGS = -10 V, -2.2 A continuous drain current (package limited), and 7 nC typical gate charge at VGS = -6 V, in a SOT-23 package.
Operating Conditions:
- Supply voltage: not applicable (discrete MOSFET; VDS up to -80 V, VGS ±20 V)
- Operating temperature: -55 to +150 °C (junction)
- Gate threshold voltage VGS(th): -2 to -4 V (VDS = VGS, ID = -250 μA)
Absolute Maximum Ratings:
- Drain-source voltage: -80 V
- Gate-source voltage: ±20 V
- Continuous drain current (TJ = 150 °C): -2.2 A (TC = 25 °C); -1.2 A (TA = 25 °C, 1" x 1" FR4, t = 10 s)
- Pulsed drain current: -7 A
- Power dissipation: 2.5 W (TC = 25 °C); 0.76 W (TA = 25 °C)
- Operating junction and storage temperature: -55 to +150 °C
- Soldering peak temperature: 260 °C
Key Specs:
- V(BR)DSS: -80 V min (VGS = 0 V, ID = -250 μA)
- RDS(on): 0.216 Ω typ / 0.270 Ω max (VGS = -10 V, ID = -1.2 A); 0.242 Ω typ / 0.303 Ω max (VGS = -6 V, ID = -1.1 A)
- IDSS: -1 μA max (VDS = -80 V, VGS = 0 V, TJ = 25 °C)
- IGSS: ±100 nA max (VGS = ±20 V)
- Qg: 11 nC typ, 17 nC max (VGS = -10 V); 7 nC typ, 11 nC max (VGS = -6 V), VDS = -40 V, ID = -1.2 A
- Ciss / Coss / Crss: 500 / 40 / 25 pF typ (VDS = -40 V, f = 1 MHz)
- Switching (VGEN = -10 V, VDD = -40 V): td(on) 10 ns, tr 15 ns, td(off) 20 ns, tf 15 ns typ
- Body diode: VSD -0.8 V typ (-1.2 V max); trr 30 ns typ
- Thermal resistance RthJA: 120 °C/W typ, 166 °C/W max (steady state)
Features:
- TrenchFET power MOSFET
- Lead (Pb)-free; halogen-free option (-GE3)
Applications:
Package:
- SOT-23 (TO-236), 3-lead
- Ordering: Si2337DS-T1-E3 (Pb-free), Si2337DS-T1-GE3 (Pb-free and halogen-free)
SI2337DS-T1-E3 Features
- TrenchFET ® power MOSFET
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
| ORDERING INFORMATION - Package | SOT-23 |
|---|---|
| Lead (Pb)-free | Si2337DS-T1-E3 |
| Lead (Pb)-free and halogen-free | Si2337DS-T1-GE3 |
| ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless PARAMETER | ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless PARAMETER | otherwise noted) SYMBOL | LIMIT | UNIT |
|---|---|---|---|---|
| Drain-source voltage | Drain-source voltage | V DS | -80 | V |
| Gate-source voltage | Gate-source voltage | V GS | ± 20 | V |
| Continuous drain current (T J = 150 °C) | T C = 25 °C | I D | -2.2 | A |
| Continuous drain current (T J = 150 °C) | T C = 70 °C | I D | -1.75 | A |
| Continuous drain current (T J = 150 °C) | T A = 25 °C | I D | -1.2 b, c | A |
| Continuous drain current (T J = 150 °C) | T A = 70 °C | I D | -0.96 b, c | A |
| Pulsed drain current | Pulsed drain current | I DM | -7 | A |
| Continuous source-drain diode current | T C = 25 °C | I S | -2.1 | A |
| Continuous source-drain diode current | T A = 25 °C | I S | -0.63 b, c | A |
| Avalanche current | L = 0.1 mH | I AS | 11 | A |
| Single-pulse avalanche energy | L = 0.1 mH | E AS | 6 | mJ |
| Maximum power dissipation | T C = 25 °C | P D | 2.5 | W |
| Maximum power dissipation | T C = 70 °C | P D | 1.6 | W |
| Maximum power dissipation | T A = 25 °C | P D | 0.76 b, c | W |
| Maximum power dissipation | T A = 70 °C | P D | 0.48 b, c | W |
| Operating junction and storage temperature range | Operating junction and storage temperature range | T J , T stg | -55 to +150 | °C |
| Soldering recommendations (peak temperature) d, e | Soldering recommendations (peak temperature) d, e | 260 | °C |
| THERMAL RESISTANCE RATINGS | THERMAL RESISTANCE RATINGS | THERMAL RESISTANCE RATINGS | THERMAL RESISTANCE RATINGS | THERMAL RESISTANCE RATINGS | THERMAL RESISTANCE RATINGS |
| PARAMETER | PARAMETER | SYMBOL | TYPICAL | MAXIMUM | UNIT |
| Maximum junction-to-ambient b, d | t 10 s | R thJA | 120 | 166 | °C/W |
| Maximum junction-to-foot (drain) | Steady state | R thJF | 40 | 50 | °C/W |
SI2337DS-T1-E3 Package Information
Vishay Siliconix
| Dim | MILLIMETERS - Min | MILLIMETERS - Max | INCHES - Min | INCHES - Max |
|---|---|---|---|---|
| A | 0.89 | 1.12 | 0.0 3 5 | 0.044 |
| A 1 | 0.01 | 0.10 | 0.0004 | 0.004 |
| A 2 | 0.88 | 1.02 | 0.0 3 46 | 0.040 |
| b | 0. 3 5 | 0.50 | 0.014 | 0.020 |
| c | 0.085 | 0.18 | 0.00 3 | 0.007 |
| D | 2.80 | 3 .04 | 0.110 | 0.120 |
| E | 2.10 | 2.64 | 0.08 3 | 0.104 |
| E 1 | 1.20 | 1.40 | 0.047 | 0.055 |
| e | 0.95 BSC | 0.95 BSC | 0.0 3 74 Ref | 0.0 3 74 Ref |
| e 1 | 1.90 BSC | 1.90 BSC | 0.0748 Ref | 0.0748 Ref |
| L | 0.40 | 0.60 | 0.016 | 0.024 |
| L 1 | 0.64 Ref | 0.64 Ref | 0.025 Ref | 0.025 Ref |
| S | 0.50 Ref | 0.50 Ref | 0.020 Ref | 0.020 Ref |
| q | 3 ° | 8° | 3 ° | 8° |
| ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479 | ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479 | ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479 | ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479 | ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479 |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| SI2337DS | Vishay Intertechnology | SOT-23 |
| SI2337DS-T1-GE3 | Vishay Intertechnology | TO-236-3, SC-59, SOT-23-3 |
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All MOSFETs datasheetsAll Vishay Intertechnology datasheets (32)
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