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SI2337DS-T1-GE3

P-Channel Power MOSFET

The SI2337DS-T1-GE3 is a p-channel power mosfet from Vishay Intertechnology. View the full SI2337DS-T1-GE3 datasheet below including key specifications.

SI2337DS-T1-GE3 shares its datasheet with SI2337DS, whose page lists every part number it covers.

Official SI2337DS-T1-GE3 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Vishay Intertechnology

Category

MOSFETs

Package

TO-236-3, SC-59, SOT-23-3

Lifecycle

Obsolete (Last Updated: 2 weeks ago)

SI2337DS-T1-GE3 Key Specifications

ParameterValue
Case/PackageSOT-23-3
China RoHSCompliant
Contact PlatingTin
Continuous Drain Current (ID)1.2 mA
Continuous Drain Current2.2A (Tc)
Drain to Source Breakdown Voltage-80 V
Drain to Source Resistance270 mΩ
Drain to Source Voltage (Vds)-80 V
Drain-Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Element ConfigurationSingle
Fall Time12 ns
FET TypeP-Channel
Gate Charge (Qg)17 nC @ 10 V
Gate to Source Voltage (Vgs)20 V
Height1.12 mm
Input Capacitance500 pF
Input Capacitance (Ciss)500 pF @ 40 V
Introduction Date2009-02-11
Lead FreeLead Free
Length3.04 mm
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2025-01-21
LTD Date2025-07-21
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
MountSurface Mount
Mounting TypeSurface Mount
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
Number of Pins3
Number of Terminals3
Operating Temperature-50°C ~ 150°C (TJ)
Package / CaseTO-236-3, SC-59, SOT-23-3
PackagingDigi-Reel®
Power Dissipation760 mW
Power Dissipation (Max)760mW (Ta), 2.5W (Tc)
Radiation HardeningNo
Rds(on)270mOhm @ 1.2A, 10V Ω
Rds On Max270 mΩ
REACH SVHCUnaffected
Resistance270 MΩ
Rise Time18 ns
RoHSCompliant
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Supplier Device PackageSOT-23-3 (TO-236)
Diode TechnologyMOSFET (Metal Oxide)
Threshold Voltage-4 V
Turn-Off Delay Time20 ns
Turn-On Delay Time10 ns
Vgs (Max)±20V
Gate Threshold Voltage4V @ 250µA
Weight1.437803 g
Width1.4 mm

SI2337DS-T1-GE3 Overview

Part: Si2337DS — Vishay Siliconix

Type: P-Channel Power MOSFET (TrenchFET)

Description: -80 V P-channel MOSFET with 0.270 Ω max RDS(on) at VGS = -10 V, -2.2 A continuous drain current (package limited), and 7 nC typical gate charge at VGS = -6 V, in a SOT-23 package.

Operating Conditions:

  • Supply voltage: not applicable (discrete MOSFET; VDS up to -80 V, VGS ±20 V)
  • Operating temperature: -55 to +150 °C (junction)
  • Gate threshold voltage VGS(th): -2 to -4 V (VDS = VGS, ID = -250 μA)

Absolute Maximum Ratings:

  • Drain-source voltage: -80 V
  • Gate-source voltage: ±20 V
  • Continuous drain current (TJ = 150 °C): -2.2 A (TC = 25 °C); -1.2 A (TA = 25 °C, 1" x 1" FR4, t = 10 s)
  • Pulsed drain current: -7 A
  • Power dissipation: 2.5 W (TC = 25 °C); 0.76 W (TA = 25 °C)
  • Operating junction and storage temperature: -55 to +150 °C
  • Soldering peak temperature: 260 °C

Key Specs:

  • V(BR)DSS: -80 V min (VGS = 0 V, ID = -250 μA)
  • RDS(on): 0.216 Ω typ / 0.270 Ω max (VGS = -10 V, ID = -1.2 A); 0.242 Ω typ / 0.303 Ω max (VGS = -6 V, ID = -1.1 A)
  • IDSS: -1 μA max (VDS = -80 V, VGS = 0 V, TJ = 25 °C)
  • IGSS: ±100 nA max (VGS = ±20 V)
  • Qg: 11 nC typ, 17 nC max (VGS = -10 V); 7 nC typ, 11 nC max (VGS = -6 V), VDS = -40 V, ID = -1.2 A
  • Ciss / Coss / Crss: 500 / 40 / 25 pF typ (VDS = -40 V, f = 1 MHz)
  • Switching (VGEN = -10 V, VDD = -40 V): td(on) 10 ns, tr 15 ns, td(off) 20 ns, tf 15 ns typ
  • Body diode: VSD -0.8 V typ (-1.2 V max); trr 30 ns typ
  • Thermal resistance RthJA: 120 °C/W typ, 166 °C/W max (steady state)

Features:

  • TrenchFET power MOSFET
  • Lead (Pb)-free; halogen-free option (-GE3)

Applications:

Package:

  • SOT-23 (TO-236), 3-lead
  • Ordering: Si2337DS-T1-E3 (Pb-free), Si2337DS-T1-GE3 (Pb-free and halogen-free)

SI2337DS-T1-GE3 Features

ORDERING INFORMATION - PackageSOT-23
Lead (Pb)-freeSi2337DS-T1-E3
Lead (Pb)-free and halogen-freeSi2337DS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless PARAMETERABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless PARAMETERotherwise noted) SYMBOLLIMITUNIT
Drain-source voltageDrain-source voltageV DS-80V
Gate-source voltageGate-source voltageV GS± 20V
Continuous drain current (T J = 150 °C)T C = 25 °CI D-2.2A
Continuous drain current (T J = 150 °C)T C = 70 °CI D-1.75A
Continuous drain current (T J = 150 °C)T A = 25 °CI D-1.2 b, cA
Continuous drain current (T J = 150 °C)T A = 70 °CI D-0.96 b, cA
Pulsed drain currentPulsed drain currentI DM-7A
Continuous source-drain diode currentT C = 25 °CI S-2.1A
Continuous source-drain diode currentT A = 25 °CI S-0.63 b, cA
Avalanche currentL = 0.1 mHI AS11A
Single-pulse avalanche energyL = 0.1 mHE AS6mJ
Maximum power dissipationT C = 25 °CP D2.5W
Maximum power dissipationT C = 70 °CP D1.6W
Maximum power dissipationT A = 25 °CP D0.76 b, cW
Maximum power dissipationT A = 70 °CP D0.48 b, cW
Operating junction and storage temperature rangeOperating junction and storage temperature rangeT J , T stg-55 to +150°C
Soldering recommendations (peak temperature) d, eSoldering recommendations (peak temperature) d, e260°C
THERMAL RESISTANCE RATINGSTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE RATINGS
PARAMETERPARAMETERSYMBOLTYPICALMAXIMUMUNIT
Maximum junction-to-ambient b, dt 10 sR thJA120166°C/W
Maximum junction-to-foot (drain)Steady stateR thJF4050°C/W

SI2337DS-T1-GE3 Package Information

Vishay Siliconix

DimMILLIMETERS - MinMILLIMETERS - MaxINCHES - MinINCHES - Max
A0.891.120.0 3 50.044
A 10.010.100.00040.004
A 20.881.020.0 3 460.040
b0. 3 50.500.0140.020
c0.0850.180.00 30.007
D2.803 .040.1100.120
E2.102.640.08 30.104
E 11.201.400.0470.055
e0.95 BSC0.95 BSC0.0 3 74 Ref0.0 3 74 Ref
e 11.90 BSC1.90 BSC0.0748 Ref0.0748 Ref
L0.400.600.0160.024
L 10.64 Ref0.64 Ref0.025 Ref0.025 Ref
S0.50 Ref0.50 Ref0.020 Ref0.020 Ref
q3 °8°3 °8°
ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
SI2337DSVishay IntertechnologySOT-23
SI2337DS-T1-E3Vishay IntertechnologyTO-236-3, SC-59, SOT-23-3

Other MOSFETs

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  • AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
  • DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
  • DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
  • STL110N10F7 – STMicroelectronics, N-channel Power MOSFET
  • 2N7002 – Nexperia, N-channel Trench MOSFET

All MOSFETs datasheetsAll Vishay Intertechnology datasheets (32)

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