STR2P3LLH6

Part: STR2P3LLH6 — STMicroelectronics

Type: P-channel Power MOSFET

Description: P-channel 30 V, 0.048 Ω typ., 2 A STripFET™ H6 Power MOSFET developed using a new trench gate structure, exhibiting very low RDS(on) in a SOT-23 package.

Operating Conditions:

• Gate-source voltage: ±20 V
• Operating junction temperature: 150 °C (max)
• Storage temperature: -55 to 150 °C

Absolute Maximum Ratings:

• Max drain-source voltage: 30 V
• Max continuous drain current: 2 A (at T pcb = 25 °C)
• Max junction/storage temperature: 150 °C

Key Specs:

• Drain-source breakdown voltage V(BR)DSS: 30 V (min) at V GS = 0, I D = 250 μA
• Zero gate voltage drain current I DSS: 1 μA (max) at V GS = 0, V DS = 30 V, T J = 125 °C
• Gate threshold voltage V GS(th): 1 V (min) to 2.5 V (max) at V DS = V GS , I D = 250 μA
• Static drain-source on-resistance R DS(on): 0.048 Ω (typ) at V GS = 10 V, I D = 1 A
• Total gate charge Q g: 6 nC (typ) at V DD = 15 V, I D = 2 A, V GS = 4.5 V
• Input capacitance C iss: 639 pF (typ) at V DS = 25 V, f=1 MHz, V GS = 0
• Turn-on delay time t d(on): 5.4 ns (typ) at V DD = 15 V, I D = 2 A
• Forward on voltage V SD: 1.1 V (max) at I SD = 2 A, V GS = 0

Features:

• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss

Applications:

• Switching applications

Package:

• SOT-23

• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Table 5: Dynamic

Table 6: Switching times

Table 6: Switching times

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com . ECOPACK ® is an ST trademark.