STR2P3LLH6

P-channel Power MOSFET

The STR2P3LLH6 is a p-channel power mosfet from STMicroelectronics. View the full STR2P3LLH6 datasheet below including key specifications, electrical characteristics.

Manufacturer

STMicroelectronics

Key Specifications

Parameter	Value
Continuous Drain Current	2A (Ta)
Drain-Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	P-Channel
Gate Charge (Qg)	6 nC @ 4.5 V
Input Capacitance (Ciss)	639 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Packaging	MouseReel
Power Dissipation (Max)	350mW (Tc)
Rds(on)	56mOhm @ 1A, 10V Ω
Standard Pack Qty	3000
Supplier Device Package	SOT-23-3
Diode Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Gate Threshold Voltage	2.5V @ 250µA

Overview

Part: STR2P3LLH6 — STMicroelectronics

Type: P-channel Power MOSFET

Description: P-channel 30 V, 0.048 Ω typ., 2 A STripFET™ H6 Power MOSFET developed using a new trench gate structure, exhibiting very low RDS(on) in a SOT-23 package.

Operating Conditions:

Gate-source voltage: ±20 V
Operating junction temperature: 150 °C (max)
Storage temperature: -55 to 150 °C

Absolute Maximum Ratings:

Max drain-source voltage: 30 V
Max continuous drain current: 2 A (at T pcb = 25 °C)
Max junction/storage temperature: 150 °C

Key Specs:

Drain-source breakdown voltage V(BR)DSS: 30 V (min) at V GS = 0, I D = 250 μA
Zero gate voltage drain current I DSS: 1 μA (max) at V GS = 0, V DS = 30 V, T J = 125 °C
Gate threshold voltage V GS(th): 1 V (min) to 2.5 V (max) at V DS = V GS , I D = 250 μA
Static drain-source on-resistance R DS(on): 0.048 Ω (typ) at V GS = 10 V, I D = 1 A
Total gate charge Q g: 6 nC (typ) at V DD = 15 V, I D = 2 A, V GS = 4.5 V
Input capacitance C iss: 639 pF (typ) at V DS = 25 V, f=1 MHz, V GS = 0
Turn-on delay time t d(on): 5.4 ns (typ) at V DD = 15 V, I D = 2 A
Forward on voltage V SD: 1.1 V (max) at I SD = 2 A, V GS = 0

Features:

Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss

Applications:

Switching applications

Package:

SOT-23

Features

Order code	V DS	R DS(on) max	I D
STR2P3LLH6	30 V	0.056Ω@10 V	2 A

Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss

Electrical Characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
V (BR)DSS	Drain-source breakdown voltage	V GS = 0, I D = 250 μA	30			V
I DSS	Zero gate voltage drain current	V GS = 0, V DS = 30 V, T J = 125 °C			1	μA
I GSS	Gate body leakage current	V GS = 0, V GS = ±20 V			100	nA
V GS(th)	Gate threshold voltage	V DS = V GS , I D = 250 μA	1		2.5	V
R DS(on)	Static drain-source on-resistance	V GS = 10 V, I D = 1 A V GS = 4.5 V, I D = 1 A		0.048 0.075	0.056 0.09	Ω

Table 5: Dynamic

Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
C iss	Input capacitance	V DS = 25 V, f=1 MHz V GS = 0	-	639	-	pF
C oss	Output capacitance	V DS = 25 V, f=1 MHz V GS = 0	-	79	-	pF
C rss	Reverse transfer capacitance	V DS = 25 V, f=1 MHz V GS = 0	-	52	-	pF
Q g	Total gate charge	V DD = 15 V, I D = 2 A V GS = 4.5 V	-	6	-	nC
Q gs	Gate-source charge	V DD = 15 V, I D = 2 A V GS = 4.5 V	-	1.9	-	nC
Q gd	Gate-drain charge	V DD = 15 V, I D = 2 A V GS = 4.5 V	-	2.1	-	nC

Table 6: Switching times

Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
t d(on)	Turn-on delay time	V DD = 15 V, I D = 2 A,	-	5.4	-	ns
t r	Rise time	V DD = 15 V, I D = 2 A,	-	5	-	ns
t d (off)	Turn-off delay time	4.7 Ω, V GS = 10 V	-	19.2	-	ns
t f	Fall time	V DD = 15 V, I D = 2 A,	-	3.4	-	ns

Table 6: Switching times

Package Information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com . ECOPACK ® is an ST trademark.

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Get structured datasheet data via API

Get started free