SI2333DDS-T1-E3
P-Channel Power MOSFETThe SI2333DDS-T1-E3 is a p-channel power mosfet from Vishay Intertechnology. View the full SI2333DDS-T1-E3 datasheet below including key specifications, pinout.
Official SI2333DDS-T1-E3 datasheet (PDF) — the source this page was extracted from.
Manufacturer
Vishay IntertechnologyCategory
MOSFETsSI2333DDS-T1-E3 Key Specifications
| Parameter | Value |
|---|---|
| Input Capacitance (Ciss) | 1275 pF |
| Gate-Source Voltage (VGS) | ±8 V |
| RDS(On) Max At VGS=-1.5 V | 0.150 Ω |
| RDS(On) Max At VGS=-1.8 V | 0.063 Ω |
| RDS(On) Max At VGS=-2.5 V | 0.040 Ω |
| RDS(On) Max At VGS=-3.7 V | 0.032 Ω |
| RDS(On) Max At VGS=-4.5 V | 0.028 Ω |
| Drain-Source Voltage (VDS) | -12 V |
| Total Gate Charge (Qg) Typ | 9 nC |
| Power Dissipation (TC=25°C) | 1.7 W |
| Gate-Source Threshold Voltage | -0.4 V to -1 V |
| Pulsed Drain Current (300 μS) | -20 A |
| Continuous Drain Current (TC=25°C) | -6 A (package limited) |
| Operating Junction/Storage Temperature | -55°C to 150°C |
SI2333DDS-T1-E3 Overview
Part: Si2333DDS — Vishay Siliconix
Type: P-Channel MOSFET
Description: -12 V P-Channel MOSFET with 28 mΩ R_DS(on) at V_GS = -4.5 V, -6 A continuous drain current, and 9 nC typical gate charge.
Operating Conditions:
- Drain-Source Voltage: -12 V
- Gate-Source Voltage: ±8 V
- Operating temperature: -55 to 150 °C
- Continuous Drain Current: -6 A (T_C = 25 °C)
Absolute Maximum Ratings:
- Max supply voltage (V_DS): -12 V
- Max continuous current (I_D): -6 A (T_C = 25 °C)
- Max junction/storage temperature: -55 to 150 °C
Key Specs:
- Drain-Source Breakdown Voltage (V_DS): -12 V (min, V_DS = 0 V, I_D = -250 μA)
- Gate-Source Threshold Voltage (V_GS(th)): -0.4 V to -1 V (V_DS = V_GS, I_D = -250 μA)
- Drain-Source On-State Resistance (R_DS(on)): 0.028 Ω (max, V_GS = -4.5 V, I_D = -5 A)
- Zero Gate Voltage Drain Current (I_DSS): -1 μA (max, V_DS = -12 V, V_GS = 0 V)
- Total Gate Charge (Q_g): 23 nC (typ, V_DS = -6 V, V_GS = -8 V, I_D = -5 A)
- Input Capacitance (C_iss): 1275 pF (typ, V_DS = -6 V, V_GS = 0 V, f = 1 MHz)
- Forward Transconductance (g_fs): 18 S (typ, V_DS = -5 V, I_D = -5 A)
- Turn-On Delay Time (t_d(on)): 26 ns (typ, V_DD = -6 V, R_L = 6 Ω)
Features:
- TrenchFET® Power MOSFET
- 100 % R_g Tested
- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
Applications:
- Smart Phones and Tablet PCs
- Load Switch
- Battery Switch
Package:
- SOT-23 (3-lead)
SI2333DDS-T1-E3 Features
- TrenchFET ® Power MOSFET
- 100 % R g Tested
- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
SI2333DDS-T1-E3 Applications
- Smart Phones and Tablet PCs
- Load Switch
- Battery Switch
Top
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Si2333DDS (O4)*
- Marking Code
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Information: Si2333DDS-T1-GE3 (Lead (P b )-free and Halogen-free)
| ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted) | ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted) | ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted) | ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted) | ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted) |
|---|---|---|---|---|
| Parameter | Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | Drain-Source Voltage | V DS | - 12 | V |
| Gate-Source Voltage | Gate-Source Voltage | V GS | ± 8 | V |
| Continuous Drain Current | T C = 25 °C | D | - 6 e | A |
| Continuous Drain Current | T C = 70 °C | D | - 5.2 | A |
| Continuous Drain Current | T A = 25 °C | D | - 5 b, c | A |
| Continuous Drain Current | T A = 70 °C | D | - 4 b, c | A |
| Pulsed Drain Current (t = 300 μs) | Pulsed Drain Current (t = 300 μs) | I DM | - 20 | A |
| Continuous Source-Drain Diode Current | T C = 25 °C | I S | - 1.4 | A |
| Continuous Source-Drain Diode Current | T A = 25 °C | I S | - 0.63 b, c | A |
| Maximum Power | T C = 25 °C | P D | 1.7 | W |
| Maximum Power | T C = 70 °C | P D | 1.1 | W |
| Maximum Power | T A = 25 °C | P D | 1.20 b, c | W |
| Maximum Power | T A = 70 °C | P D | 0.6 b, c | W |
| Operating Junction and Storage Temperature Range | Operating Junction and Storage Temperature Range | T J , T stg | - 55 to 150 | °C |
| THERMAL RESISTANCE RATINGS | THERMAL RESISTANCE RATINGS |
|---|---|
| Parameter | |
| Maximum Junction-to-Ambient b, d | 5 s |
| Maximum Junction-to-Foot (Drain) | Steady State |
SI2333DDS-T1-E3 Pin Configuration
SI2333DDS-T1-E3 Pinout
Package: SOT-23 (TO-236), 3-Lead
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | G | I | Gate |
| 2 | S | I/O | Source |
| 3 | D | I/O | Drain |
Notes
- This is a P-Channel MOSFET in a 3-lead SOT-23 package.
- Pin 3 (Drain) is the large pad and serves as the primary heat-dissipation path.
- Negative drain-source voltage rating: –12 V.
- Gate-source threshold voltage: –0.4 to –1.0 V.
SI2333DDS-T1-E3 Package Information
Vishay Siliconix
| Dim | MILLIMETERS | MILLIMETERS | INCHES | INCHES |
|---|---|---|---|---|
| Dim | Min | Max | Min | Max |
| A | 0.89 | 1.12 | 0.0 3 5 | 0.044 |
| A 1 | 0.01 | 0.10 | 0.0004 | 0.004 |
| A 2 | 0.88 | 1.02 | 0.0 3 46 | 0.040 |
| b | 0. 3 5 | 0.50 | 0.014 | 0.020 |
| c | 0.085 | 0.18 | 0.00 3 | 0.007 |
| D | 2.80 | 3 .04 | 0.110 | 0.120 |
| E | 2.10 | 2.64 | 0.08 3 | 0.104 |
| E 1 | 1.20 | 1.40 | 0.047 | 0.055 |
| e | 0.95 BSC | 0.95 BSC | 0.0 3 74 Ref | 0.0 3 74 Ref |
| e 1 | 1.90 BSC | 1.90 BSC | 0.0748 Ref | 0.0748 Ref |
| L | 0.40 | 0.60 | 0.016 | 0.024 |
| L 1 | 0.64 Ref | 0.64 Ref | 0.025 Ref | 0.025 Ref |
| S | 0.50 Ref | 0.50 Ref | 0.020 Ref | 0.020 Ref |
| q | 3 ° | 8° | 3 ° | 8° |
| ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479 | ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479 | ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479 | ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479 | ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479 |
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All MOSFETs datasheetsAll Vishay Intertechnology datasheets (32)
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