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SI2333DDS-T1-E3

The SI2333DDS-T1-E3 is an electronic component. View the full SI2333DDS-T1-E3 datasheet below including specifications and datasheet sections.

Overview

Part: Si2333DDS — Vishay Siliconix

Type: P-Channel MOSFET

Description: -12 V P-Channel MOSFET with 28 mΩ R_DS(on) at V_GS = -4.5 V, -6 A continuous drain current, and 9 nC typical gate charge.

Operating Conditions:

  • Drain-Source Voltage: -12 V
  • Gate-Source Voltage: ±8 V
  • Operating temperature: -55 to 150 °C
  • Continuous Drain Current: -6 A (T_C = 25 °C)

Absolute Maximum Ratings:

  • Max supply voltage (V_DS): -12 V
  • Max continuous current (I_D): -6 A (T_C = 25 °C)
  • Max junction/storage temperature: -55 to 150 °C

Key Specs:

  • Drain-Source Breakdown Voltage (V_DS): -12 V (min, V_DS = 0 V, I_D = -250 μA)
  • Gate-Source Threshold Voltage (V_GS(th)): -0.4 V to -1 V (V_DS = V_GS, I_D = -250 μA)
  • Drain-Source On-State Resistance (R_DS(on)): 0.028 Ω (max, V_GS = -4.5 V, I_D = -5 A)
  • Zero Gate Voltage Drain Current (I_DSS): -1 μA (max, V_DS = -12 V, V_GS = 0 V)
  • Total Gate Charge (Q_g): 23 nC (typ, V_DS = -6 V, V_GS = -8 V, I_D = -5 A)
  • Input Capacitance (C_iss): 1275 pF (typ, V_DS = -6 V, V_GS = 0 V, f = 1 MHz)
  • Forward Transconductance (g_fs): 18 S (typ, V_DS = -5 V, I_D = -5 A)
  • Turn-On Delay Time (t_d(on)): 26 ns (typ, V_DD = -6 V, R_L = 6 Ω)

Features:

  • TrenchFET® Power MOSFET
  • 100 % R_g Tested
  • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Applications:

  • Smart Phones and Tablet PCs
  • Load Switch
  • Battery Switch

Package:

  • SOT-23 (3-lead)

Features

  • TrenchFET ® Power MOSFET
  • 100 % R g Tested
  • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Applications

  • Smart Phones and Tablet PCs
  • Load Switch
  • Battery Switch

Top

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Si2333DDS (O4)*

  • Marking Code

Orderin g

Information: Si2333DDS-T1-GE3 (Lead (P b )-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
ParameterParameterSymbolLimitUnit
Drain-Source VoltageDrain-Source VoltageV DS- 12V
Gate-Source VoltageGate-Source VoltageV GS± 8V
Continuous Drain CurrentT C = 25 °CD- 6 eA
Continuous Drain CurrentT C = 70 °CD- 5.2A
Continuous Drain CurrentT A = 25 °CD- 5 b, cA
Continuous Drain CurrentT A = 70 °CD- 4 b, cA
Pulsed Drain Current (t = 300 μs)Pulsed Drain Current (t = 300 μs)I DM- 20A
Continuous Source-Drain Diode CurrentT C = 25 °CI S- 1.4A
Continuous Source-Drain Diode CurrentT A = 25 °CI S- 0.63 b, cA
Maximum PowerT C = 25 °CP D1.7W
Maximum PowerT C = 70 °CP D1.1W
Maximum PowerT A = 25 °CP D1.20 b, cW
Maximum PowerT A = 70 °CP D0.6 b, cW
Operating Junction and Storage Temperature RangeOperating Junction and Storage Temperature RangeT J , T stg- 55 to 150°C
THERMAL RESISTANCE RATINGSTHERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient b, d5 s
Maximum Junction-to-Foot (Drain)Steady State

Package Information

Vishay Siliconix

DimMILLIMETERSMILLIMETERSINCHESINCHES
DimMinMaxMinMax
A0.891.120.0 3 50.044
A 10.010.100.00040.004
A 20.881.020.0 3 460.040
b0. 3 50.500.0140.020
c0.0850.180.00 30.007
D2.803 .040.1100.120
E2.102.640.08 30.104
E 11.201.400.0470.055
e0.95 BSC0.95 BSC0.0 3 74 Ref0.0 3 74 Ref
e 11.90 BSC1.90 BSC0.0748 Ref0.0748 Ref
L0.400.600.0160.024
L 10.64 Ref0.64 Ref0.025 Ref0.025 Ref
S0.50 Ref0.50 Ref0.020 Ref0.020 Ref
q3 °3 °
ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479ECN: S-0 3 946-Rev. K, 09-Jul-01 DWG: 5479

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