MOSFETs Datasheets

IRLML2803PBF

International Rectifier

IRLML2803TRPBF

Infineon Technologies

MOSFET N-CH 30V 1.2A SOT23

IRLML5103

Infineon Technologies

30V HEXFET N-channel power MOSFET in Micro3 (SOT-23) package with RDS(on) below 29 mΩ at 4.5V gate drive, intended for load/system switching

IRLML5203

Infineon Technologies

30V N-channel HEXFET power MOSFET in a Micro3 (SOT-23) package with low RDS(on) of 29 mΩ max at 4.5V gate drive, intended for load/system switching

IRLML6244

Infineon Technologies

30V N-channel HEXFET power MOSFET in SOT-23 (Micro3) with low RDS(on) (<29 mΩ at 4.5V gate drive), intended for load/system switch applications

IRLML6246

Infineon Technologies

30V N-channel HEXFET power MOSFET with low on-resistance (<29 mΩ at 4.5V gate drive) in a SOT-23 package, intended for load/system switch applications.

IRLML6302

Infineon Technologies

30V logic-level N-channel HEXFET power MOSFET in SOT-23 with 29 mOhm max RDS(on) at 4.5V, for load/system switching

IRLML6344

Infineon Technologies

30V N-Channel HEXFET Power MOSFET for load/system switch applications, featuring low on-resistance.

IRLML6346

Infineon Technologies

30V N-channel HEXFET power MOSFET with low on-resistance (<29 mΩ at 4.5V VGS) in a Micro3 (SOT-23) package for load/system switch applications

IRLML6401

Infineon Technologies

30V N-channel HEXFET power MOSFET in SOT-23 with 29 mΩ max RDS(on) at 4.5V VGS, intended for load/system switching.

IRLML6402

Infineon Technologies

30V N-channel HEXFET power MOSFET with low RDS(on) (<29 mΩ at 4.5V) in a SOT-23 package, intended for load/system switch applications

IRLML9301

Infineon Technologies

30V N-channel HEXFET power MOSFET with low RDS(on) (<29 mΩ at 4.5V) in a Micro3 (SOT-23) package, intended for load/system switch applications.

IRLML9303

Infineon Technologies

30V N-channel logic-level HEXFET power MOSFET in SOT-23 with low RDS(on) (<29 mΩ) for load/system switch applications

IRLR3110Z

International Rectifier / Infineon Technologies

100V, 14mΩ N-channel logic-level HEXFET power MOSFET with 175°C junction rating, fast switching and repetitive avalanche capability for industrial applications

IRLR3110ZPBF

International Rectifier / Infineon Technologies

100V, 14mOhm N-channel logic-level HEXFET power MOSFET with 175C junction temperature, fast switching and repetitive avalanche capability for industrial applications

IRLR3110ZTRPBF

International Rectifier / Infineon Technologies

N-Channel HEXFET Power MOSFET designed for industrial applications, featuring ultra-low on-resistance, 175°C operating temperature, fast switching, and improved repetitive avalanche rating.

IRLU3110ZPBF

International Rectifier / Infineon Technologies

100V, 14mOhm N-channel HEXFET power MOSFET with 63A continuous drain current and 175°C junction operating temperature, designed for industrial applications

IRLZ44N

Infineon Technologies

Logic-Level Gate Drive HEXFET Power MOSFET with advanced process technology, dynamic dv/dt rating, 175°C operating temperature, fast switching, and fully avalanche rated.

IRLZ44NPBF

Infineon Technologies

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.022 Ohm; Id 47A; TO-220AB; Pd 110W; Vgs +/-16V

ISC030N10NM6

Infineon Technologies

100 V N-channel power MOSFET optimized for high-frequency switching and synchronous rectification with very low on-resistance

ISC030N10NM6ATMA1

Infineon Technologies

Power MOSFET, N Channel, 100 V, 179 A, 0.0026 ohm, TDSON-FL, Surface Mount

MMBF170

onsemi

60V N-channel enhancement mode small-signal MOSFET in SOT-23 using DMOS technology, for switching applications up to 500 mA DC

NTA/NTE4151P

onsemi

NTA4151PT1

onsemi

NTA4151PT1G

onsemi

MOSFET P-CH 20V 760MA SC75

NTD20N06L

onsemi

NTE4151PT1G

onsemi

NTMD4184P

Uniroyal Electronics

Dual-die FETKY device combining a -30 V, -4.0 A P-channel power MOSFET with an independent 20 V, 2.2 A Schottky barrier diode in a SOIC-8 package, for DC-DC converters, disk drives and printers.

NTMD4184PFR2G

onsemi

Single P-channel power MOSFET (-30 V, -4.0 A) co-packaged with an independent-pinout 20 V, 2.2 A Schottky barrier diode (FETKY) in SOIC-8 for DC-DC converters, disk drives and printers.

SI2302

Vishay Intertechnology

20 V N-channel TrenchFET power MOSFET for load switching in portable devices and DC/DC converters