ISC030N10NM6ATMA1
N-Channel Power MOSFETThe ISC030N10NM6ATMA1 is a n-channel power mosfet from Infineon Technologies. View the full ISC030N10NM6ATMA1 datasheet below including key specifications.
Official ISC030N10NM6ATMA1 datasheet (PDF) — the source this page was extracted from.
ISC030N10NM6ATMA1 Key Specifications
| Parameter | Value |
|---|---|
| China RoHS | Non-Compliant |
| Continuous Drain Current (ID) | 179 A |
| Continuous Drain Current | 21A (Ta), 179A (Tc) |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 3 mΩ |
| Drain-Source Voltage (Vdss) | 100 V |
| Drain-Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 69 nC @ 10 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Height | 1.2 mm |
| Input Capacitance (Ciss) | 5200 pF @ 50 V |
| Introduction Date | 2021-09-06 |
| Lifecycle Status | Production (Last Updated: 4 months ago) |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 208 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Terminals | 8 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | 8-PowerTDFN |
| Packaging | MouseReel |
| Power Dissipation | 3 W |
| Power Dissipation (Max) | 3W (Ta), 208W (Tc) |
| Rds(on) | 3mOhm @ 50A, 10V Ω |
| REACH SVHC | Affected |
| RoHS | Compliant |
| Standard Pack Qty | 5000 |
| Supplier Device Package | PG-TDSON-8 FL |
| Diode Technology | MOSFET (Metal Oxide) |
| Turn-Off Delay Time | 22.5 ns |
| Turn-On Delay Time | 11 ns |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 3.3V @ 109µA |
ISC030N10NM6ATMA1 Overview
Part: ISC030N10NM6 — Infineon Technologies
Type: N-Channel Power MOSFET
Description: 100 V, 179 A N-channel OptiMOS 6 power transistor featuring a low maximum RDS(on) of 3.0 mΩ optimized for high-frequency switching and synchronous rectification.
Operating Conditions:
- Operating temperature: -55 to 175 °C
Absolute Maximum Ratings:
- Continuous drain current: 179 A (TC = 25 °C, VGS = 10 V)
- Gate source voltage: -20 V to 20 V
- Max junction/storage temperature: 175 °C
Key Specs:
- Drain-source breakdown voltage V(BR)DSS: min 100 V (VGS = 0 V, ID = 1 mA)
- Drain-source on-state resistance RDS(on): max 3.0 mΩ (VGS = 10 V, ID = 50 A)
- Drain-source on-state resistance RDS(on): max 4.0 mΩ (VGS = 8 V, ID = 25 A)
- Gate threshold voltage VGS(th): 2.3 V to 3.3 V (typ 2.8 V, VDS = VGS, ID = 109 μA)
- Total gate charge Qg: typ 55 nC, max 69 nC (VDD = 50 V, ID = 25 A, VGS = 0 to 10 V)
- Output charge Qoss: typ 101 nC, max 126 nC (VDS = 50 V, VGS = 0 V)
- Input capacitance Ciss: typ 4000 pF, max 5200 pF (VGS = 0 V, VDS = 50 V, f = 1 MHz)
- Diode forward voltage VSD: typ 0.82 V, max 1.0 V (Tj = 25 °C)
Features:
- N-channel, normal level
- Very low on-resistance RDS(on)
- Excellent gate charge x RDS(on) product (FOM)
- Very low reverse-recovery charge (Qrr)
- High avalanche energy rating
- 175 °C operating temperature
- Optimized for high-frequency switching and synchronous rectification
- Pb-free lead plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
- MSL-1 classified according to J-STD-020
Applications:
- High-frequency switching
- Synchronous rectification
- Industrial applications
Package:
- PG-TDSON-8 FL
ISC030N10NM6ATMA1 Features
- ·-N-channel,-normal-level
- ·-Very-low-on-resistance-RDS(on)
- ·-Excellent-gate-charge-x-RDS(on)-product-(FOM)
- ·-Very-low-reverse-recovery-charge-(Qrr)
- ·-High-avalanche-energy-rating
- ·-175°C-operating-temperature
- ·-Optimized-for-high-frequency-switching-and-synchronous-rectification
- ·-Pb-free-lead-plating;-RoHS-compliant
- ·-Halogen-free-according-to-IEC61249-2-21
- ·-MSL-1-classified-according-to-J-STD-020
ISC030N10NM6ATMA1 Thermal Information
| Values | Values | Values | Unit | ||
|---|---|---|---|---|---|
| Parameter | Symbol | Min. | Typ. | Max. | |
| Thermal resistance, junction - case, bottom | R thJC | - | 0.36 | 0.72 | °C/W |
| Thermal resistance, junction - case, top | R thJC | - | - | 20 | °C/W |
| Thermal resistance, junction - ambient, 6 cm² cooling area | R thJA | - | - | 50 | °C/W |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| ISC030N10NM6 | Infineon Technologies | PG-TDSON-8 FL |
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All MOSFETs datasheetsAll Infineon Technologies datasheets (140)
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