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ISC030N10NM6

N-Channel Power MOSFET

The ISC030N10NM6 is a n-channel power mosfet from Infineon Technologies. View the full ISC030N10NM6 datasheet below including key specifications.

ISC030N10NM6 shares its datasheet with ISC030N10NM6ATMA1, whose page lists every part number it covers.

Official ISC030N10NM6 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Infineon Technologies

Category

MOSFETs

Package

PG-TDSON-8 FL

ISC030N10NM6 Key Specifications

ParameterValue
Avalanche Energy988 mJ
Power Dissipation208 W
Total Gate Charge55 nC
Package Dimensions5.00mm x 6.00mm (approx. D x E)
Drain Source Voltage100 V
Pulsed Drain Current716 A
Continuous Drain Current179 A
Gate Source Voltage Range-20V to 20V
Drain Source On Resistance3 mΩ
Operating Temperature Range-55°C to 175°C

ISC030N10NM6 Overview

Part: ISC030N10NM6 — Infineon Technologies

Type: N-Channel Power MOSFET

Description: 100 V, 179 A N-channel OptiMOS 6 power transistor featuring a low maximum RDS(on) of 3.0 mΩ optimized for high-frequency switching and synchronous rectification.

Operating Conditions:

  • Operating temperature: -55 to 175 °C

Absolute Maximum Ratings:

  • Continuous drain current: 179 A (TC = 25 °C, VGS = 10 V)
  • Gate source voltage: -20 V to 20 V
  • Max junction/storage temperature: 175 °C

Key Specs:

  • Drain-source breakdown voltage V(BR)DSS: min 100 V (VGS = 0 V, ID = 1 mA)
  • Drain-source on-state resistance RDS(on): max 3.0 mΩ (VGS = 10 V, ID = 50 A)
  • Drain-source on-state resistance RDS(on): max 4.0 mΩ (VGS = 8 V, ID = 25 A)
  • Gate threshold voltage VGS(th): 2.3 V to 3.3 V (typ 2.8 V, VDS = VGS, ID = 109 μA)
  • Total gate charge Qg: typ 55 nC, max 69 nC (VDD = 50 V, ID = 25 A, VGS = 0 to 10 V)
  • Output charge Qoss: typ 101 nC, max 126 nC (VDS = 50 V, VGS = 0 V)
  • Input capacitance Ciss: typ 4000 pF, max 5200 pF (VGS = 0 V, VDS = 50 V, f = 1 MHz)
  • Diode forward voltage VSD: typ 0.82 V, max 1.0 V (Tj = 25 °C)

Features:

  • N-channel, normal level
  • Very low on-resistance RDS(on)
  • Excellent gate charge x RDS(on) product (FOM)
  • Very low reverse-recovery charge (Qrr)
  • High avalanche energy rating
  • 175 °C operating temperature
  • Optimized for high-frequency switching and synchronous rectification
  • Pb-free lead plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21
  • MSL-1 classified according to J-STD-020

Applications:

  • High-frequency switching
  • Synchronous rectification
  • Industrial applications

Package:

  • PG-TDSON-8 FL

ISC030N10NM6 Features

  • ·-N-channel,-normal-level
  • ·-Very-low-on-resistance-RDS(on)
  • ·-Excellent-gate-charge-x-RDS(on)-product-(FOM)
  • ·-Very-low-reverse-recovery-charge-(Qrr)
  • ·-High-avalanche-energy-rating
  • ·-175°C-operating-temperature
  • ·-Optimized-for-high-frequency-switching-and-synchronous-rectification
  • ·-Pb-free-lead-plating;-RoHS-compliant
  • ·-Halogen-free-according-to-IEC61249-2-21
  • ·-MSL-1-classified-according-to-J-STD-020

ISC030N10NM6 Thermal Information

ValuesValuesValuesUnit
ParameterSymbolMin.Typ.Max.
Thermal resistance, junction - case, bottomR thJC-0.360.72°C/W
Thermal resistance, junction - case, topR thJC--20°C/W
Thermal resistance, junction - ambient, 6 cm² cooling areaR thJA--50°C/W

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
ISC030N10NM6ATMA1Infineon Technologies8-PowerTDFN

Other MOSFETs

  • 20N06D – onsemi, Power MOSFET
  • AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
  • AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
  • DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
  • 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
  • DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
  • 2N7002 – Nexperia, N-channel Trench MOSFET
  • ISC030N10NM6ATMA1 – Infineon Technologies, N-Channel Power MOSFET

All MOSFETs datasheetsAll Infineon Technologies datasheets (140)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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