MMBF170
The MMBF170 is an electronic component from onsemi. View the full MMBF170 datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
onsemi
Overview
Part: BS170 / MMBF170 — onsemi
Type: N-Channel, Enhancement Mode Field Effect Transistor
Description: 60 V, 500 mA N-Channel enhancement mode field effect transistor designed for low on-state resistance and fast switching performance in low voltage, low current applications.
Operating Conditions:
- Drain-Source Voltage: up to 60 V
- Operating temperature: -55 to 150 °C
- Gate-Source Voltage: up to 20 V
Absolute Maximum Ratings:
- Max Drain-Source Voltage: 60 V
- Max continuous Drain Current: 500 mA
- Max Gate-Source Voltage: 20 V
- Max Junction/Storage Temperature: 150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BV_DSS): 60 V (V_GS = 0 V, I_D = 100 μA)
- Gate Threshold Voltage (V_GS(th)): 0.8 V min, 3 V max (V_DS = V_GS, I_D = 1 mA)
- Static Drain-Source On-Resistance (R_DS(ON)): 1.2 Ω typ, 5 Ω max (V_GS = 10 V, I_D = 200 mA)
- Zero Gate Voltage Drain Current (I_DSS): 0.5 mA max (V_DS = 25 V, V_GS = 0 V)
- Input Capacitance (C_iss): 24 pF typ, 40 pF max (V_DS = 10 V, V_GS = 0 V, f = 1.0 MHz)
- Turn-On Time (t_on): 10 ns max (V_DD = 25 V, I_D = 200 mA, V_GS = 10 V, R_GEN = 25 Ω for BS170)
- Turn-Off Time (t_off): 10 ns max (V_DD = 25 V, I_D = 200 mA, V_GS = 10 V, R_GEN = 25 Ω for BS170)
Features:
- High Density Cell Design for Low R_DS(ON)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
- Pb-Free Devices
Applications:
- Small servo motor control
- Power MOSFET gate drivers
- Switching applications
Package:
- TO-92
- SOT-23
Features
- High Density Cell Design for Low RDS(ON)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
- These are Pb-Free Devices
A
= Assembly Plant Code
L
= Wafer Lot Number
YW
= Assembly Start Week
M
= Date Code
Electrical Characteristics
| Symbol | Parameter | Test Condition | Type | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS |
| BV DSS | Drain-Source Breakdown Voltage | V GS = 0 V, I D = 100 m A | All | 60 | - | - | V |
| I DSS | Zero Gate Voltage Drain Current | V DS = 25 V, V GS = 0 V | All | - | - | 0.5 | m A |
| I GSSF | Gate - Body Leakage, Forward | V GS = 15 V, V DS = 0 V | All | - | - | 10 | nA |
| ON CHARACTERISTICS (Note 1) | ON CHARACTERISTICS (Note 1) | ON CHARACTERISTICS (Note 1) | ON CHARACTERISTICS (Note 1) | ON CHARACTERISTICS (Note 1) | ON CHARACTERISTICS (Note 1) | ON CHARACTERISTICS (Note 1) | ON CHARACTERISTICS (Note 1) |
| V GS(th) | Gate Threshold Voltage | V DS = V GS , I D = 1 mA | All | 0.8 | 2.1 | 3 | V |
| R DS(ON) | Static Drain-Source On-Resistance | V GS = 10 V, I D = 200 mA | All | - | 1.2 | 5 | W |
| g FS | Forward Transconductance | V DS = 10 V, I D = 200 mA | BS170 | - | 320 | - | mS |
| g FS | V DS 2 V DS(on) , I D = 200 mA | MMBF170 | - | 320 | - | ||
| DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS |
| C iss | Input Capacitance | V DS = 10 V, V GS = 0 V, f = 1.0 MHz | All | - | 24 | 40 | pF |
| C oss | Output Capacitance | All | - | 17 | 30 | pF | |
| C rss | Reverse Transfer Capacitance | All | - | 7 | 10 | pF | |
| SWITCHING CHARACTERISTICS (Note 1) | SWITCHING CHARACTERISTICS (Note 1) | SWITCHING CHARACTERISTICS (Note 1) | SWITCHING CHARACTERISTICS (Note 1) | SWITCHING CHARACTERISTICS (Note 1) | SWITCHING CHARACTERISTICS (Note 1) | SWITCHING CHARACTERISTICS (Note 1) | SWITCHING CHARACTERISTICS (Note 1) |
| t on | Turn-On Time | V DD = 25 V, I D = 200 mA, V GS = 10 V, R GEN = 25 W | BS170 | - | - | 10 | ns |
| t on | V DD = 25 V, I D = 500 mA, V GS = 10 V, R GEN = 50 W | MMBF170 | - | - | 10 | ||
| t off | Turn-Off Time | V DD = 25 V, I D = 200 mA, V GS = 10 V, R GEN = 25 W | BS170 | - | - | 10 | ns |
| t off | V DD = 25 V, I D = 500 mA, V GS = 10 V, R GEN = 50 W | MMBF170 | - | - | 10 |
- Pulse Test: Pulse Width 300 m s, Duty Cycle 2.0%.
Absolute Maximum Ratings
| Symbol | Parameter | Parameter | BS170 | MMBF170 | Unit |
|---|---|---|---|---|---|
| V DSS | Drain-Source Voltage | Drain-Source Voltage | 60 | 60 | V |
| V DGR | Drain-Gate Voltage (R GS 1M W ) | Drain-Gate Voltage (R GS 1M W ) | 60 | 60 | V |
| V GSS | Gate-Source Voltage | Gate-Source Voltage | 20 | 20 | V |
| I D | Drain Current | - Continuous | 500 | 500 | mA |
| - Pulsed | 1200 | 800 | |||
| T J , T STG | Operating and Storage Temperature Range | Operating and Storage Temperature Range | - 55 to 150 | - 55 to 150 | C |
| T L | Maximum Lead Temperature for Soldering Purposes, 1/16' from Case for 10 Seconds | Maximum Lead Temperature for Soldering Purposes, 1/16' from Case for 10 Seconds | 300 | 300 | C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Thermal Information
| Symbol | Parameter | BS170 | MMBF170 | Unit |
|---|---|---|---|---|
| P D | Maximum Power Dissipation Derate above 25 C | 830 6.6 | 300 2.4 | mW mW/ C |
| R q JA | Thermal Resistance, Junction to Ambient | 150 | 417 | C/W |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| BS-08-B2AA016 | — | — |
| BS170 | Fairchild Semiconductor | — |
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