MMBF170
N-Channel Enhancement Mode MOSFETThe MMBF170 is a n-channel enhancement mode mosfet from onsemi. View the full MMBF170 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official MMBF170 datasheet (PDF) — the source this page was extracted from.
MMBF170 Key Specifications
| Parameter | Value |
|---|---|
| Turn-On/Turn-Off Time | 10 ns max |
| Power Dissipation (PD) | 300 mW |
| Input Capacitance (Ciss) | 24 pF typ, 40 pF max |
| Pulsed Drain Current (ID) | 800 mA |
| Gate-Source Voltage (VGSS) | ±20 V |
| Drain-Source Voltage (VDSS) | 60 V |
| Continuous Drain Current (ID) | 500 mA |
| Forward Transconductance (GFS) | 320 mS typ |
| Gate Threshold Voltage VGS(Th) | 0.8 V to 3 V (2.1 V typ) |
| Drain-Gate Voltage (RGS ≤ 1 MΩ) | 60 V |
| Thermal Resistance Junction-To-Ambient | 417 °C/W |
| Operating And Storage Temperature Range | -55 °C to 150 °C |
| Static On-Resistance RDS(ON) (VGS=10V, ID=200mA) | 1.2 Ω typ, 5 Ω max |
MMBF170 Overview
Part: BS170 / MMBF170 — onsemi
Type: N-Channel, Enhancement Mode Field Effect Transistor
Description: 60 V, 500 mA N-Channel enhancement mode field effect transistor designed for low on-state resistance and fast switching performance in low voltage, low current applications.
Operating Conditions:
- Drain-Source Voltage: up to 60 V
- Operating temperature: -55 to 150 °C
- Gate-Source Voltage: up to 20 V
Absolute Maximum Ratings:
- Max Drain-Source Voltage: 60 V
- Max continuous Drain Current: 500 mA
- Max Gate-Source Voltage: 20 V
- Max Junction/Storage Temperature: 150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BV_DSS): 60 V (V_GS = 0 V, I_D = 100 μA)
- Gate Threshold Voltage (V_GS(th)): 0.8 V min, 3 V max (V_DS = V_GS, I_D = 1 mA)
- Static Drain-Source On-Resistance (R_DS(ON)): 1.2 Ω typ, 5 Ω max (V_GS = 10 V, I_D = 200 mA)
- Zero Gate Voltage Drain Current (I_DSS): 0.5 mA max (V_DS = 25 V, V_GS = 0 V)
- Input Capacitance (C_iss): 24 pF typ, 40 pF max (V_DS = 10 V, V_GS = 0 V, f = 1.0 MHz)
- Turn-On Time (t_on): 10 ns max (V_DD = 25 V, I_D = 200 mA, V_GS = 10 V, R_GEN = 25 Ω for BS170)
- Turn-Off Time (t_off): 10 ns max (V_DD = 25 V, I_D = 200 mA, V_GS = 10 V, R_GEN = 25 Ω for BS170)
Features:
- High Density Cell Design for Low R_DS(ON)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
- Pb-Free Devices
Applications:
- Small servo motor control
- Power MOSFET gate drivers
- Switching applications
Package:
- TO-92
- SOT-23
MMBF170 Features
- High Density Cell Design for Low RDS(ON)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
- These are Pb-Free Devices
A
= Assembly Plant Code
L
= Wafer Lot Number
YW
= Assembly Start Week
M
= Date Code
MMBF170 Electrical Characteristics
| Symbol | Parameter | Test Condition | Type | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS |
| BV DSS | Drain-Source Breakdown Voltage | V GS = 0 V, I D = 100 m A | All | 60 | - | - | V |
| I DSS | Zero Gate Voltage Drain Current | V DS = 25 V, V GS = 0 V | All | - | - | 0.5 | m A |
| I GSSF | Gate - Body Leakage, Forward | V GS = 15 V, V DS = 0 V | All | - | - | 10 | nA |
| ON CHARACTERISTICS (Note 1) | ON CHARACTERISTICS (Note 1) | ON CHARACTERISTICS (Note 1) | ON CHARACTERISTICS (Note 1) | ON CHARACTERISTICS (Note 1) | ON CHARACTERISTICS (Note 1) | ON CHARACTERISTICS (Note 1) | ON CHARACTERISTICS (Note 1) |
| V GS(th) | Gate Threshold Voltage | V DS = V GS , I D = 1 mA | All | 0.8 | 2.1 | 3 | V |
| R DS(ON) | Static Drain-Source On-Resistance | V GS = 10 V, I D = 200 mA | All | - | 1.2 | 5 | W |
| g FS | Forward Transconductance | V DS = 10 V, I D = 200 mA | BS170 | - | 320 | - | mS |
| g FS | V DS 2 V DS(on) , I D = 200 mA | MMBF170 | - | 320 | - | ||
| DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS |
| C iss | Input Capacitance | V DS = 10 V, V GS = 0 V, f = 1.0 MHz | All | - | 24 | 40 | pF |
| C oss | Output Capacitance | All | - | 17 | 30 | pF | |
| C rss | Reverse Transfer Capacitance | All | - | 7 | 10 | pF | |
| SWITCHING CHARACTERISTICS (Note 1) | SWITCHING CHARACTERISTICS (Note 1) | SWITCHING CHARACTERISTICS (Note 1) | SWITCHING CHARACTERISTICS (Note 1) | SWITCHING CHARACTERISTICS (Note 1) | SWITCHING CHARACTERISTICS (Note 1) | SWITCHING CHARACTERISTICS (Note 1) | SWITCHING CHARACTERISTICS (Note 1) |
| t on | Turn-On Time | V DD = 25 V, I D = 200 mA, V GS = 10 V, R GEN = 25 W | BS170 | - | - | 10 | ns |
| t on | V DD = 25 V, I D = 500 mA, V GS = 10 V, R GEN = 50 W | MMBF170 | - | - | 10 | ||
| t off | Turn-Off Time | V DD = 25 V, I D = 200 mA, V GS = 10 V, R GEN = 25 W | BS170 | - | - | 10 | ns |
| t off | V DD = 25 V, I D = 500 mA, V GS = 10 V, R GEN = 50 W | MMBF170 | - | - | 10 |
- Pulse Test: Pulse Width 300 m s, Duty Cycle 2.0%.
MMBF170 Absolute Maximum Ratings
| Symbol | Parameter | Parameter | BS170 | MMBF170 | Unit |
|---|---|---|---|---|---|
| V DSS | Drain-Source Voltage | Drain-Source Voltage | 60 | 60 | V |
| V DGR | Drain-Gate Voltage (R GS 1M W ) | Drain-Gate Voltage (R GS 1M W ) | 60 | 60 | V |
| V GSS | Gate-Source Voltage | Gate-Source Voltage | 20 | 20 | V |
| I D | Drain Current | - Continuous | 500 | 500 | mA |
| - Pulsed | 1200 | 800 | |||
| T J , T STG | Operating and Storage Temperature Range | Operating and Storage Temperature Range | - 55 to 150 | - 55 to 150 | C |
| T L | Maximum Lead Temperature for Soldering Purposes, 1/16' from Case for 10 Seconds | Maximum Lead Temperature for Soldering Purposes, 1/16' from Case for 10 Seconds | 300 | 300 | C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
MMBF170 Thermal Information
| Symbol | Parameter | BS170 | MMBF170 | Unit |
|---|---|---|---|---|
| P D | Maximum Power Dissipation Derate above 25 C | 830 6.6 | 300 2.4 | mW mW/ C |
| R q JA | Thermal Resistance, Junction to Ambient | 150 | 417 | C/W |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| BS170 | Fairchild Semiconductor | TO-92 |
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- IRF540NPBF – Infineon Technologies, Power MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- 2N7002 – Nexperia, N-channel Trench MOSFET
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
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