BS170

Part: BS170 / MMBF170 from Fairchild Semiconductor Type: N-Channel Enhancement Mode Field Effect Transistor

Key Specs:

• Drain-Source Voltage (VDSS): 60 V
• Drain Current - Continuous (ID): 500 mA
• Operating and Storage Temperature Range (TJ, TSTG): -55 to 150 °C
• Maximum Power Dissipation (PD) for BS170: 830 mW
• Maximum Power Dissipation (PD) for MMBF170: 300 mW

Features:

• High density cell design for low RDS(ON).
• Voltage controlled small signal switch.
• Rugged and reliable.
• High saturation current capability.

Applications:

• Small servo motor control
• Power MOSFET gate drivers
• Other switching applications

Package:

• TO-92
• SOT-23

• High density cell design for low RDS(ON).
• Voltage controlled small signal switch.
• Rugged and reliable.
• High saturation current capability.

Symbol	Parameter	BS170	MMBF170	Units
VDSS	Drain-Source Voltage	60		V
VDGR	Drain-Gate Voltage (RGS ≤ 1MΩ)	60		V
VGSS	Gate-Source Voltage	± 20		V
ID	Drain Current - Continuous	500	500	mA
	- Pulsed	1200	800	mA
TJ, TSTG	Operating and Storage Temperature Range	- 55 to 150		°C
TL	Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds	300		°C

Symbol	Parameter	BS170	MMBF170	Units
PD	Maximum Power Dissipation Derate above 25°C	830 6.6	300 2.4	mW mW/°C
RθJA	Thermal Resistance, Junction to Ambient	150	417	°C/W

Symbol	Parameter	Conditions	Type	Min.	Typ.	Max.	Units
	OFF CHARACTERISTICS
BVDSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 100μA	All	60			V
IDSS	Zero Gate Voltage Drain Current	VDS = 25V, VGS = 0V	All			0.5	μA
IGSSF	Gate - Body Leakage, Forward	VGS = 15V, VDS = 0V	All			10	nA

Note:

1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.

Ordering Information

Part Number	Package	Package Type	Lead Frame	Pin array
BS170	TO-92	BULK	STRAIGHT	D G S
BS170_D26Z	TO-92	Tape and Reel	FORMING	D G S
BS170_D27Z	TO-92	Tape and Reel	FORMING	D G S
BS170_D74Z	TO-92	AMMO	FORMING	D G S
BS170_D75Z	TO-92	AMMO	FORMING	D G S
MMBF170	SOT-23	Tape and Reel

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com BS170 / MMBF170 Rev. E2 3

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor

BS170 / MMBF170 Rev. E2 5

BS170 / MMBF170 Rev. E2 6

Packing	Style	Quantity	FOL code
Reel	A	2,000	026Z
	B	2,000	D11Z
	C	2,000	028Z
	D	2,000	D10Z
	E	2,000	D27Z
	F	2,000	081Z
	G	2,000	029Z
	H	2,000	089Z
Ammo	M	2,000	D74Z
	P	2,000	075Z
EOL CODE / FLOW OPTION	DESCRIPTION	LEADCLIP DIMENSION	MINIMUM ORDER QTY
------------------------------	-------------------------	-----------------------	----------------------
NO EOL CODE	STRAIGHT LEADS	NO LEAD CLIP	2.0K / BOX
J18Z	TO-18 OPTION STD	NO LEAD CLIP	2.0K / BOX
J35Z	TO-18 OPTION REVERSE	NO LEAD CLIP	2.0K / BOX
J05Z	TO-5 OPTION STD	NO LEAD CLIP	1.5K / BOX
J60Z	TO-5 OPTION REVERSE	NO LEAD CLIP	1.5K / BOX
J61Z	IN LINE 0.200 SPACING	NO LEAD CLIP	1.5K / BOX

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com BS170 / MMBF170 Rev. E2 8

BS170 / MMBF170 Rev. E2 9

BS170 / MMBF170 Rev. E2 10

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

©2001 Fairchild Semiconductor Corporation October 2004, Rev. D1

BS170 / MMBF170 Rev. E2 11

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

BS170 / MMBF170 Rev. E2 12

October 2004, Rev. D1

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com BS170 / MMBF170 Rev. E2 13

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PRODUCT STATUS DEFINITIONS