BS170

Part: BS170 / MMBF170 — ON Semiconductor (formerly Fairchild Semiconductor)

Type: N-Channel Enhancement Mode Field Effect Transistor

Description: N-Channel enhancement mode field effect transistor produced using DMOS technology, designed to minimize on-state resistance and provide rugged, reliable, and fast switching performance for applications requiring up to 500mA DC and 60V drain-source voltage.

Operating Conditions:

• Gate-Source Voltage: ±20 V
• Operating temperature: -55 to 150 °C
• Max continuous drain current: 500 mA

Absolute Maximum Ratings:

• Max Drain-Source Voltage: 60 V
• Max continuous Drain Current: 500 mA
• Max Operating and Storage Temperature: 150 °C

Key Specs:

• Drain-Source Breakdown Voltage (BV DSS): 60 V (V GS = 0V, I D = 100 μ A)
• Zero Gate Voltage Drain Current (I DSS): 0.5 μ A max (V DS = 25V, V GS = 0V)
• Gate Threshold Voltage (V GS(th)): 0.8 V min, 3 V max (V DS = V GS , I D = 1mA)
• Static Drain-Source On-Resistance (R DS(ON)): 1.2 Ω typ, 5 Ω max (V GS = 10V, I D = 200mA)
• Input Capacitance (C iss): 24 pF typ, 40 pF max (V DS = 10V, V GS = 0V, f = 1.0MHz)
• Turn-On Time (t on): 10 ns max (V DD = 25V, I D = 200mA/500mA, V GS = 10V)
• Turn-Off Time (t off): 10 ns max (V DD = 25V, I D = 200mA/500mA, V GS = 10V)

Features:

• High density cell design for low R DS(ON)
• Voltage controlled small signal switch
• Rugged and reliable
• High saturation current capability

Applications:

• Small servo motor control
• Power MOSFET gate drivers
• Switching applications

Package:

• TO-92
• SOT-23

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

• ■ High density cell design for low R DS(ON) .
• ■ Voltage controlled small signal switch.
• ■ Rugged and reliable.
• ■ High saturation current capability.