SIR668DP-T1-RE3
N-Channel MOSFETThe SIR668DP-T1-RE3 is a n-channel mosfet from Vishay Siliconix. View the full SIR668DP-T1-RE3 datasheet below including key specifications.
Manufacturer
Vishay Siliconix
Category
N-Channel MOSFET
Package
PowerPAK® SO-8
Lifecycle
Active
Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current (ID) | 95 A |
| Continuous Drain Current | 95A (Tc) |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 4.8 mΩ |
| Drain-Source Voltage (Vdss) | 100 V |
| Drain-Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 83 nC @ 7.5 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Height | 1.17 mm |
| Input Capacitance (Ciss) | 5400 pF @ 50 V |
| Introduction Date | 2017-03-22 |
| Lifecycle Status | NRND (Last Updated: 4 months ago) |
| Manufacturer Package Identifier | S17-0173-Single |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 104 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Terminals | 5 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | PowerPAK® SO-8 |
| Power Dissipation | 6.25 W |
| Power Dissipation (Max) | 104W (Tc) |
| Rds(on) | 4.8mOhm @ 20A, 10V Ω |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Supplier Device Package | PowerPAK® SO-8 |
| Diode Technology | MOSFET (Metal Oxide) |
| Turn-Off Delay Time | 30 ns |
| Turn-On Delay Time | 17 ns |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 3.4V @ 250µA |
Overview
Part: SiR668DP — Vishay Siliconix
Type: N-Channel 100 V (D-S) MOSFET
Description: N-Channel 100 V (D-S) MOSFET featuring TrenchFET Gen IV technology, very low RDS-Qg figure-of-merit, and tuned for the lowest RDS-Qoss FOM.
Operating Conditions:
- Operating junction and storage temperature: -55 to +150 °C
Absolute Maximum Ratings:
- Max drain-source voltage: 100 V
- Max gate-source voltage: ± 20 V
- Max continuous drain current (Tc=25°C): 95 A
- Max pulsed drain current (t=100 μs): 200 A
- Max continuous source-drain diode current (Tc=25°C): 94 A
- Max single pulse avalanche current: 35 A
- Max single pulse avalanche energy: 61.2 mJ
- Max power dissipation (Tc=25°C): 104 W
- Max junction and storage temperature: +150 °C
Key Specs:
- Drain-source breakdown voltage: 100 V (VGS = 0 V, ID = 250 μA)
- Gate-source threshold voltage: 2 V min, 3.4 V max (VDS = VGS, ID = 250 μA)
- Zero gate voltage drain current: 1 μA max (VDS = 100 V, VGS = 0 V)
- Drain-source on-state resistance: 0.00480 Ω max (VGS = 10 V, ID = 20 A)
- Input capacitance: 5400 pF typ (VDS = 50 V, VGS = 0 V, f = 1 MHz)
- Total gate charge: 72 nC typ (VDS = 50 V, VGS = 10 V, ID = 10 A)
- Body diode voltage: 0.73 V typ, 1.1 V max (IS = 5 A, VGS = 0 V)
- Body diode reverse recovery time: 59 ns typ, 118 ns max (IS = 5 A, VGS = 0 V)
Features:
- TrenchFET Gen IV power MOSFET
- Very low RDS - Qg figure-of-merit (FOM)
- Tuned for the lowest RDS - Qoss FOM
- 100 % Rg and UIS tested
- Material categorization: lead (Pb)-free and halogen-free
Applications:
- Synchronous rectification
- Primary side switch
- DC/DC converters
- OR-ing
- Power supplies
- Motor drive control
- Battery and load switch
Package:
- PowerPAK SO-8 (Single/Dual)
Features
- TrenchFET ® Gen IV power MOSFET
- Very low RDS - Qg figure-of-merit (FOM)
- Tuned for the lowest RDS - Qoss FOM
- 100 % Rg and UIS tested
Vishay Siliconix
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Applications
- Synchronous rectification
- Primary side switch
- DC/DC converters
- OR-ing
- Power supplies
- Motor drive control
- Battery and load switch
- Package
- Lead (Pb)-free and halogen-free
| ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, PARAMETER | ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, PARAMETER | unless otherwise SYMBOL | LIMIT | UNIT |
|---|---|---|---|---|
| Drain-source voltage | Drain-source voltage | V DS | 100 | V |
| Gate-source voltage | Gate-source voltage | V GS | ± 20 | V |
| Continuous drain current (T J = 150 °C) | T C = 25 °C | I D | 95 | A |
| Continuous drain current (T J = 150 °C) | T C = 70 °C | I D | 76 | A |
| Continuous drain current (T J = 150 °C) | T A = 25 °C | I D | 23.2 b, c | A |
| Continuous drain current (T J = 150 °C) | T A = 70 °C | I D | 18.6 b, c | A |
| Pulsed drain current (t = 100 μs) | Pulsed drain current (t = 100 μs) | I DM | 200 | A |
| Continuous source-drain diode current | T C = 25 °C | I S | 94 | A |
| Continuous source-drain diode current | T A = 25 °C | I S | 5.6 b, c | A |
| Single pulse avalanche current | L = 0.1 mH | I AS | 35 | A |
| Single pulse avalanche energy | L = 0.1 mH | E AS | 61.2 | mJ |
| Maximum power dissipation | T C = 25 °C | P D | 104 | W |
| Maximum power dissipation | T C = 70 °C | P D | 66.6 | W |
| Maximum power dissipation | T A = 25 °C | P D | 6.25 b, c | W |
| Maximum power dissipation | T A = 70 °C | P D | 4 b, c | W |
| Operating junction and storage temperature range | Operating junction and storage temperature range | T J , T stg | -55 to +150 | °C |
| Soldering recommendations (peak temperature) c | Soldering recommendations (peak temperature) c | 260 | °C |
| THERMAL RESISTANCE RATINGS | THERMAL RESISTANCE RATINGS |
|---|---|
| PARAMETER | |
| Maximum junction-to-ambient b | t 10 s |
| Maximum junction-to-case (drain) | Steady state |
Thermal Information
Because of the common footprint, a PowerPAK SO-8 can be mounted on an existing standard SO-8 pad pattern. The question then arises as to the thermal performance of the PowerPAK device under these conditions. A characterization was made comparing a standard SO-8 and a PowerPAK device on a board with a trough cut out underneath the PowerPAK drain pad. This configuration restricted the heat flow to the SO-8 land pads. The results are shown in figure 5.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| SIR668DP | Vishay Siliconix | — |
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