SIR668DP-T1-RE3

Part: SiR668DP — Vishay Siliconix

Type: N-Channel 100 V (D-S) MOSFET

Description: N-Channel 100 V (D-S) MOSFET featuring TrenchFET Gen IV technology, very low RDS-Qg figure-of-merit, and tuned for the lowest RDS-Qoss FOM.

Operating Conditions:

• Operating junction and storage temperature: -55 to +150 °C

Absolute Maximum Ratings:

• Max drain-source voltage: 100 V
• Max gate-source voltage: ± 20 V
• Max continuous drain current (Tc=25°C): 95 A
• Max pulsed drain current (t=100 μs): 200 A
• Max continuous source-drain diode current (Tc=25°C): 94 A
• Max single pulse avalanche current: 35 A
• Max single pulse avalanche energy: 61.2 mJ
• Max power dissipation (Tc=25°C): 104 W
• Max junction and storage temperature: +150 °C

Key Specs:

• Drain-source breakdown voltage: 100 V (VGS = 0 V, ID = 250 μA)
• Gate-source threshold voltage: 2 V min, 3.4 V max (VDS = VGS, ID = 250 μA)
• Zero gate voltage drain current: 1 μA max (VDS = 100 V, VGS = 0 V)
• Drain-source on-state resistance: 0.00480 Ω max (VGS = 10 V, ID = 20 A)
• Input capacitance: 5400 pF typ (VDS = 50 V, VGS = 0 V, f = 1 MHz)
• Total gate charge: 72 nC typ (VDS = 50 V, VGS = 10 V, ID = 10 A)
• Body diode voltage: 0.73 V typ, 1.1 V max (IS = 5 A, VGS = 0 V)
• Body diode reverse recovery time: 59 ns typ, 118 ns max (IS = 5 A, VGS = 0 V)

Features:

• TrenchFET Gen IV power MOSFET
• Very low RDS - Qg figure-of-merit (FOM)
• Tuned for the lowest RDS - Qoss FOM
• 100 % Rg and UIS tested
• Material categorization: lead (Pb)-free and halogen-free

Applications:

• Synchronous rectification
• Primary side switch
• DC/DC converters
• OR-ing
• Power supplies
• Motor drive control
• Battery and load switch

Package:

• PowerPAK SO-8 (Single/Dual)

• TrenchFET ® Gen IV power MOSFET
• Very low RDS - Qg figure-of-merit (FOM)
• Tuned for the lowest RDS - Qoss FOM
• 100 % Rg and UIS tested

Vishay Siliconix

• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

• Synchronous rectification

• Primary side switch

• DC/DC converters

• OR-ing

• Power supplies

• Motor drive control

• Battery and load switch

• Package

• Lead (Pb)-free and halogen-free

Because of the common footprint, a PowerPAK SO-8 can be mounted on an existing standard SO-8 pad pattern. The question then arises as to the thermal performance of the PowerPAK device under these conditions. A characterization was made comparing a standard SO-8 and a PowerPAK device on a board with a trough cut out underneath the PowerPAK drain pad. This configuration restricted the heat flow to the SO-8 land pads. The results are shown in figure 5.