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IRFP4368PBF

Power MOSFET

The IRFP4368PBF is a power mosfet from Infineon Technologies. View the full IRFP4368PBF datasheet below including key specifications, pinout, absolute maximum ratings.

Manufacturer

Infineon Technologies

Category

Power MOSFET

Package

TO-247AC

Key Specifications

ParameterValue
On Resistance Max1.85mΩ
Drain Source Voltage75V
Power Dissipation Max520W
Total Gate Charge Max570nC
Gate Source Voltage Range±20V
Continuous Drain Current Max195A
Gate Threshold Voltage Range2.0V to 4.0V
Junction To Case Thermal Resistance0.29°C/W
Operating Junction Temperature Range-55°C to +175°C

Overview

Part: IRFP4368PbF — Infineon Technologies

Type: HEXFET Power MOSFET

Description: 75V, 350A N-Channel HEXFET Power MOSFET with a maximum on-resistance of 1.85 mΩ.

Operating Conditions:

  • Supply voltage: Gate-to-Source Voltage ±20V
  • Operating temperature: -55 to +175 °C
  • Max continuous drain current: 350A (Silicon Limited, T_C = 25°C)

Absolute Maximum Ratings:

  • Max supply voltage: 75 V (V_DSS)
  • Max continuous current: 350 A (I_D @ T_C = 25°C, Silicon Limited)
  • Max junction/storage temperature: +175 °C

Key Specs:

  • Drain-to-Source Breakdown Voltage (V_BR)DSS: 75 V (V_GS = 0V, I_D = 250μA)
  • Static Drain-to-Source On-Resistance (R_DS(on)): 1.85 mΩ (max) (V_GS = 10V, I_D = 195A)
  • Gate Threshold Voltage (V_GS(th)): 2.0 V (min) to 4.0 V (max) (V_DS = V_GS, I_D = 250μA)
  • Drain-to-Source Leakage Current (I_DSS): 20 μA (max) (V_DS = 75V, V_GS = 0V)
  • Total Gate Charge (Q_g): 570 nC (max) (I_D = 195A, V_DS = 38V, V_GS = 10V)
  • Turn-On Delay Time (t_d(on)): 43 ns (typ) (V_DD = 49V, I_D = 195A, R_G = 2.7 Ω, V_GS = 10V)
  • Input Capacitance (C_iss): 19230 pF (typ) (V_GS = 0V, V_DS = 50V, ƒ = 100kHz)
  • Continuous Source Current (Body Diode) (I_S): 350 A (max)

Features:

  • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability

Applications:

  • High Efficiency Synchronous Rectification in SMPS
  • Uninterruptible Power Supply
  • High Speed Power Switching
  • Hard Switched and High Frequency Circuits

Package:

  • TO-247AC

Applications

  • l High Efficiency Synchronous Rectification in SMPS
  • l Uninterruptible Power Supply
  • l High Speed Power Switching
  • l Hard Switched and High Frequency Circuits

Pin Configuration

IRFP4368PBF – TO-247AC Package

Pin NumberPin NameTypeDescription
1GIGate
2DPDrain
3SPSource

Notes

  • TO-247AC is a 3-pin power package with Gate (control), Drain (power output), and Source (power return/ground).
  • The device includes an integral body diode (reverse p-n junction) between Source and Drain.
  • Pin numbers are read from the package outline diagram showing the circular pin arrangement with D at top-right, G at left, and S at bottom-right.

Absolute Maximum Ratings

Thermal Information

SymbolParameterTyp.Max.Units
R θ JCJunction-to-Case k---0.29°C/W
R θ CSCase-to-Sink, Flat Greased Surface0.24---°C/W
R θ JAJunction-to-Ambient jk---40°C/W

Package Information

Dimensions are shown in millimeters (inches)

Ordering Information

MPNPackageTemperature RangePacking
IRFP4368PbFTO-247AC-55 to +175 °Cnull

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
IRFP4368Infineon Technologies
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