IRFP4368PBF

Power MOSFET

The IRFP4368PBF is a power mosfet from Infineon Technologies. View the full IRFP4368PBF datasheet below including key specifications, pinout, absolute maximum ratings.

IRFP4368PBF shares its datasheet with IRFP4368, whose page lists every part number it covers.

Official IRFP4368PBF datasheet (PDF) — the source this page was extracted from.

Manufacturer

Infineon Technologies

IRFP4368PBF Key Specifications

Parameter	Value
On Resistance Max	1.85mΩ
Drain Source Voltage	75V
Power Dissipation Max	520W
Total Gate Charge Max	570nC
Gate Source Voltage Range	±20V
Continuous Drain Current Max	195A
Gate Threshold Voltage Range	2.0V to 4.0V
Junction To Case Thermal Resistance	0.29°C/W
Operating Junction Temperature Range	-55°C to +175°C

IRFP4368PBF Overview

Part: IRFP4368PbF — Infineon Technologies

Type: HEXFET Power MOSFET

Description: 75V, 350A N-Channel HEXFET Power MOSFET with a maximum on-resistance of 1.85 mΩ.

Operating Conditions:

Supply voltage: Gate-to-Source Voltage ±20V
Operating temperature: -55 to +175 °C
Max continuous drain current: 350A (Silicon Limited, T_C = 25°C)

Absolute Maximum Ratings:

Max supply voltage: 75 V (V_DSS)
Max continuous current: 350 A (I_D @ T_C = 25°C, Silicon Limited)
Max junction/storage temperature: +175 °C

Key Specs:

Drain-to-Source Breakdown Voltage (V_BR)DSS: 75 V (V_GS = 0V, I_D = 250μA)
Static Drain-to-Source On-Resistance (R_DS(on)): 1.85 mΩ (max) (V_GS = 10V, I_D = 195A)
Gate Threshold Voltage (V_GS(th)): 2.0 V (min) to 4.0 V (max) (V_DS = V_GS, I_D = 250μA)
Drain-to-Source Leakage Current (I_DSS): 20 μA (max) (V_DS = 75V, V_GS = 0V)
Total Gate Charge (Q_g): 570 nC (max) (I_D = 195A, V_DS = 38V, V_GS = 10V)
Turn-On Delay Time (t_d(on)): 43 ns (typ) (V_DD = 49V, I_D = 195A, R_G = 2.7 Ω, V_GS = 10V)
Input Capacitance (C_iss): 19230 pF (typ) (V_GS = 0V, V_DS = 50V, ƒ = 100kHz)
Continuous Source Current (Body Diode) (I_S): 350 A (max)

Features:

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability

Applications:

High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits

Package:

TO-247AC

IRFP4368PBF Applications

l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits

IRFP4368PBF Pin Configuration

IRFP4368PBF – TO-247AC Package

Pin Number	Pin Name	Type	Description
1	G	I	Gate
2	D	P	Drain
3	S	P	Source

Notes

TO-247AC package: Three-pin through-hole power package with Gate (G), Drain (D), and Source (S).
Pin 2 (Drain) and Pin 3 (Source) are power pins rated for high current (195 A package-limited, 350 A silicon-limited).
Pin 1 (Gate) is the control input, rated for ±20 V.
The device includes an integral body diode (Source-Drain reverse p-n junction) with continuous current rating of 350 A and pulsed rating of 1280 A.
Mounting torque for M3 or 6-32 screw: 10 lb·in (1.1 N·m).

IRFP4368PBF Absolute Maximum Ratings

IRFP4368PBF Thermal Information

Symbol	Parameter	Typ.	Max.	Units
R θ JC	Junction-to-Case k	---	0.29	°C/W
R θ CS	Case-to-Sink, Flat Greased Surface	0.24	---	°C/W
R θ JA	Junction-to-Ambient jk	---	40	°C/W

IRFP4368PBF Package Information

Dimensions are shown in millimeters (inches)

IRFP4368PBF Ordering Information

MPN	Package	Temperature Range	Packing
IRFP4368PbF	TO-247AC	-55 to +175 °C	null

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
IRFP4368	Infineon Technologies	TO-247AC

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All MOSFETs datasheets All Infineon Technologies datasheets (140)

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