IRFP4368PBF
Power MOSFETThe IRFP4368PBF is a power mosfet from Infineon Technologies. View the full IRFP4368PBF datasheet below including key specifications, pinout, absolute maximum ratings.
Manufacturer
Infineon Technologies
Category
Power MOSFET
Package
TO-247AC
Key Specifications
| Parameter | Value |
|---|---|
| On Resistance Max | 1.85mΩ |
| Drain Source Voltage | 75V |
| Power Dissipation Max | 520W |
| Total Gate Charge Max | 570nC |
| Gate Source Voltage Range | ±20V |
| Continuous Drain Current Max | 195A |
| Gate Threshold Voltage Range | 2.0V to 4.0V |
| Junction To Case Thermal Resistance | 0.29°C/W |
| Operating Junction Temperature Range | -55°C to +175°C |
Overview
Part: IRFP4368PbF — Infineon Technologies
Type: HEXFET Power MOSFET
Description: 75V, 350A N-Channel HEXFET Power MOSFET with a maximum on-resistance of 1.85 mΩ.
Operating Conditions:
- Supply voltage: Gate-to-Source Voltage ±20V
- Operating temperature: -55 to +175 °C
- Max continuous drain current: 350A (Silicon Limited, T_C = 25°C)
Absolute Maximum Ratings:
- Max supply voltage: 75 V (V_DSS)
- Max continuous current: 350 A (I_D @ T_C = 25°C, Silicon Limited)
- Max junction/storage temperature: +175 °C
Key Specs:
- Drain-to-Source Breakdown Voltage (V_BR)DSS: 75 V (V_GS = 0V, I_D = 250μA)
- Static Drain-to-Source On-Resistance (R_DS(on)): 1.85 mΩ (max) (V_GS = 10V, I_D = 195A)
- Gate Threshold Voltage (V_GS(th)): 2.0 V (min) to 4.0 V (max) (V_DS = V_GS, I_D = 250μA)
- Drain-to-Source Leakage Current (I_DSS): 20 μA (max) (V_DS = 75V, V_GS = 0V)
- Total Gate Charge (Q_g): 570 nC (max) (I_D = 195A, V_DS = 38V, V_GS = 10V)
- Turn-On Delay Time (t_d(on)): 43 ns (typ) (V_DD = 49V, I_D = 195A, R_G = 2.7 Ω, V_GS = 10V)
- Input Capacitance (C_iss): 19230 pF (typ) (V_GS = 0V, V_DS = 50V, ƒ = 100kHz)
- Continuous Source Current (Body Diode) (I_S): 350 A (max)
Features:
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche SOA
- Enhanced body diode dV/dt and dI/dt Capability
Applications:
- High Efficiency Synchronous Rectification in SMPS
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits
Package:
- TO-247AC
Applications
- l High Efficiency Synchronous Rectification in SMPS
- l Uninterruptible Power Supply
- l High Speed Power Switching
- l Hard Switched and High Frequency Circuits
Pin Configuration
IRFP4368PBF – TO-247AC Package
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | G | I | Gate |
| 2 | D | P | Drain |
| 3 | S | P | Source |
Notes
- TO-247AC is a 3-pin power package with Gate (control), Drain (power output), and Source (power return/ground).
- The device includes an integral body diode (reverse p-n junction) between Source and Drain.
- Pin numbers are read from the package outline diagram showing the circular pin arrangement with D at top-right, G at left, and S at bottom-right.
Absolute Maximum Ratings
Thermal Information
| Symbol | Parameter | Typ. | Max. | Units |
|---|---|---|---|---|
| R θ JC | Junction-to-Case k | --- | 0.29 | °C/W |
| R θ CS | Case-to-Sink, Flat Greased Surface | 0.24 | --- | °C/W |
| R θ JA | Junction-to-Ambient jk | --- | 40 | °C/W |
Package Information
Dimensions are shown in millimeters (inches)
Ordering Information
| MPN | Package | Temperature Range | Packing |
|---|---|---|---|
| IRFP4368PbF | TO-247AC | -55 to +175 °C | null |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| IRFP4368 | Infineon Technologies | — |
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