IRFP4368

Part: IRFP4368PbF — Infineon Technologies

Type: HEXFET Power MOSFET

Description: 75V, 350A N-Channel HEXFET Power MOSFET with a maximum on-resistance of 1.85 mΩ.

Operating Conditions:

• Supply voltage: Gate-to-Source Voltage ±20V
• Operating temperature: -55 to +175 °C
• Max continuous drain current: 350A (Silicon Limited, T_C = 25°C)

Absolute Maximum Ratings:

• Max supply voltage: 75 V (V_DSS)
• Max continuous current: 350 A (I_D @ T_C = 25°C, Silicon Limited)
• Max junction/storage temperature: +175 °C

Key Specs:

• Drain-to-Source Breakdown Voltage (V_BR)DSS: 75 V (V_GS = 0V, I_D = 250μA)
• Static Drain-to-Source On-Resistance (R_DS(on)): 1.85 mΩ (max) (V_GS = 10V, I_D = 195A)
• Gate Threshold Voltage (V_GS(th)): 2.0 V (min) to 4.0 V (max) (V_DS = V_GS, I_D = 250μA)
• Drain-to-Source Leakage Current (I_DSS): 20 μA (max) (V_DS = 75V, V_GS = 0V)
• Total Gate Charge (Q_g): 570 nC (max) (I_D = 195A, V_DS = 38V, V_GS = 10V)
• Turn-On Delay Time (t_d(on)): 43 ns (typ) (V_DD = 49V, I_D = 195A, R_G = 2.7 Ω, V_GS = 10V)
• Input Capacitance (C_iss): 19230 pF (typ) (V_GS = 0V, V_DS = 50V, ƒ = 100kHz)
• Continuous Source Current (Body Diode) (I_S): 350 A (max)

Features:

• Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
• Fully Characterized Capacitance and Avalanche SOA
• Enhanced body diode dV/dt and dI/dt Capability

Applications:

• High Efficiency Synchronous Rectification in SMPS
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits

Package:

• TO-247AC

• l High Efficiency Synchronous Rectification in SMPS
• l Uninterruptible Power Supply
• l High Speed Power Switching
• l Hard Switched and High Frequency Circuits

Dimensions are shown in millimeters (inches)