FS8205A

Dual N-Channel Enhancement Mode Power MOSFET

The FS8205A is a dual n-channel enhancement mode power mosfet from Fortune Semiconductor Corporation. View the full FS8205A datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Manufacturer

Fortune Semiconductor Corporation

Key Specifications

Parameter	Value
Gate-Source Voltage (VGS)	±12 V
Storage Temperature Range	-55 to 150 °C
Drain-Source Voltage (VDS)	20 V
Operating Junction Temperature Range	-55 to 150 °C
Total Power Dissipation (PD @ 25°C)	1 W
Continuous Drain Current (ID @ 25°C)	6 A
On-Resistance (RDS(ON) @ VGS=2.5V, ID=3A)	35 mΩ max
On-Resistance (RDS(ON) @ VGS=4.5V, ID=4A)	25 mΩ max

Overview

Part: FS8205A — Fortune Semiconductor Corporation

Type: Dual N-Channel Enhancement Mode Power MOSFET

Description: Dual N-Channel Enhancement Mode Power MOSFET featuring low on-resistance (25 mΩ max at VGS=4.5V, ID=4A) and a continuous drain current of 6 A at 25 °C, suitable for Li-ion battery management applications.

Operating Conditions:

Operating junction temperature: -55 to 150 °C
Gate threshold voltage: 0.5–1.0 V (VDS = VGS, ID = 250μA)

Absolute Maximum Ratings:

Max drain-source voltage: 20 V
Max gate-source voltage: ±12 V
Max continuous drain current: 6 A (TA= 25 °C)
Max pulsed drain current: 25 A
Max junction/storage temperature: -55 to 150 °C

Key Specs:

Drain-Source Breakdown Voltage (BVDSS): 20 V (VGS = 0V, ID = 250μA)
Static Drain-Source On-Resistance (RDS(ON)): 25 mΩ max (VGS = 4.5V, ID = 4A)
Static Drain-Source On-Resistance (RDS(ON)): 35 mΩ max (VGS = 2.5V, ID = 3A)
Gate Threshold Voltage (VGS(th)): 0.5 V min, 1.0 V max (VDS = VGS, ID = 250μA)
Drain-Source Leakage Current (IDSS): 1 μA max (Tj = 25 °C, VDS = 20V, VGS = 0V)
Gate-Source Leakage (IGSS): ±10 μA max (VGS = ±10V)
Thermal Resistance Junction-ambient (Rthj-a): 125 °C/W max

Features:

Low on-resistance
RDS(ON) = 25 mΩ MAX. (VGS = 4.5V, ID = 4A)
RDS(ON) = 35 mΩ MAX. (VGS = 2.5V, ID = 3A)

Applications:

Li-ion battery management applications

Package:

TSSOP-8

Features

1.1 Low on-resistance 1.1.1 RDS(ON) = 25 m Ω MAX. (VGS = 4.5V, ID = 4A) 1.1.2 RDS(ON) = 35 m Ω MAX. (VGS = 2.5V, ID = 3A)

Pin Configuration

FSC'

Electrical Characteristics

Electrical Characteristics @Tj = 25 °C ( unless otherwise specified )

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
Static Characteristics	Static Characteristics	Static Characteristics	Static Characteristics	Static Characteristics	Static Characteristics	Static Characteristics
BV DSS	Drain-Source Breakdown Voltage	V GS = 0V, I D = 250μA	20	-	-	V
Δ BV DSS / Δ T j	Breakdown Voltage Temperature Coefficient	Reference to 25 °C , I D =1mA	-	0.1	-	V/ °C
R DS(ON)	Static Drain-Source On-Resistance 2	V GS = 4.5V, I D = 4A	-	21	25	m Ω
		V GS = 2.5V, I D = 3A	-	27	35	m Ω
V GS(th)	Gate Threshold Voltage	V DS = V GS , I D = 250μA	0.5	-	1.0	V
I DSS	Drain-Source Leakage Current (T j = 25 °C )	V DS =20V, V GS = 0V	-	-	1	μA
I DSS	Drain-Source Leakage Current (T j = 70 °C )	V DS =20V, V GS = 0V	-	-	25	μA
I GSS	Gate-Source Leakage	V GS = ± 10V	-	-	± 10	μA

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
I S	Continuous Source Current (Body Diode)	V D = V G = 0V, V S = 1.2V	-	-	0.83	A
V SD	Forward On Voltage 2	T j = 25 °C , I S = 1.25A, V GS = 0V	-	-	1.2	V

FSC'

Properties

Source-Drain Diode Notes : 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦ 300us, duty cycle ≦ 2%. 3. Surface mounted on 1 in 2 copper pad of FR4 board ; 208 °C /W when mounted on Min. copper pad. For Reference Onl

Absolute Maximum Ratings

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-Source Voltage	± 12	V
ID @TA= 25 °C	Continuous Drain Current3	6	A
ID @TA= 70 °C	Continuous Drain Current3	5	A
IDM	Pulsed Drain Current1	25	A
PD @TA= 25 °C	Total Power Dissipation	1	W
	Linear Derating Factor	0.008	W/ °C
TSTG	Storage Temperature Range	-55 to 150	°C
TJ	Operating Junction Temperature Range	-55 to 150	°C

Properties

Thermal Information

Symbol	Parameter	Value	Unit
Rthj-a	Thermal Resistance Junction-ambient3	Max. 125	°C /W

For Reference Onl

Package Information

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