FS8205A
Dual N-Channel Enhancement Mode Power MOSFETThe FS8205A is a dual n-channel enhancement mode power mosfet from EVVO. View the full FS8205A datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.
Official FS8205A datasheet (PDF) — the source this page was extracted from.
FS8205A Key Specifications
| Parameter | Value |
|---|---|
| Configuration | 2 N-Channel, Common Drain |
| Continuous Drain Current | 6A (Ta) |
| Drain-Source Voltage (Vdss) | 20V |
| Gate Charge (Qg) | 17.6nC @ 4.5V |
| Input Capacitance (Ciss) | 910pF @ 20V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | SOT-23-6 |
| Power (Max) | 2W (Ta) |
| Rds(on) | 27mOhm @ 6A, 4.5V Ω |
| Supplier Device Package | SOT-23-6 |
| Diode Technology | MOSFET (Metal Oxide) |
| Gate Threshold Voltage | 1.2V @ 250µA |
FS8205A Overview
Part: FS8205A — Fortune Semiconductor Corporation
Type: Dual N-Channel Enhancement Mode Power MOSFET
Description: Dual N-Channel Enhancement Mode Power MOSFET featuring low on-resistance (25 mΩ max at VGS=4.5V, ID=4A) and a continuous drain current of 6 A at 25 °C, suitable for Li-ion battery management applications.
Operating Conditions:
- Operating junction temperature: -55 to 150 °C
- Gate threshold voltage: 0.5–1.0 V (VDS = VGS, ID = 250μA)
Absolute Maximum Ratings:
- Max drain-source voltage: 20 V
- Max gate-source voltage: ±12 V
- Max continuous drain current: 6 A (TA= 25 °C)
- Max pulsed drain current: 25 A
- Max junction/storage temperature: -55 to 150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BVDSS): 20 V (VGS = 0V, ID = 250μA)
- Static Drain-Source On-Resistance (RDS(ON)): 25 mΩ max (VGS = 4.5V, ID = 4A)
- Static Drain-Source On-Resistance (RDS(ON)): 35 mΩ max (VGS = 2.5V, ID = 3A)
- Gate Threshold Voltage (VGS(th)): 0.5 V min, 1.0 V max (VDS = VGS, ID = 250μA)
- Drain-Source Leakage Current (IDSS): 1 μA max (Tj = 25 °C, VDS = 20V, VGS = 0V)
- Gate-Source Leakage (IGSS): ±10 μA max (VGS = ±10V)
- Thermal Resistance Junction-ambient (Rthj-a): 125 °C/W max
Features:
- Low on-resistance
- RDS(ON) = 25 mΩ MAX. (VGS = 4.5V, ID = 4A)
- RDS(ON) = 35 mΩ MAX. (VGS = 2.5V, ID = 3A)
Applications:
- Li-ion battery management applications
Package:
- TSSOP-8
FS8205A Features
- 1.1 Low on-resistance 1.1.1 RDS(ON) = 25 m Ω MAX. (VGS = 4.5V, ID = 4A) 1.1.2 RDS(ON) = 35 m Ω MAX. (VGS = 2.5V, ID = 3A)
FS8205A Pin Configuration
| Pin | Name | Type | Description |
|---|---|---|---|
| 1 | G | I | Gate |
| 2 | S | P | Source |
| 3 | D | P | Drain |
FS8205A Electrical Characteristics
Electrical Characteristics @Tj = 25 °C ( unless otherwise specified )
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Static Characteristics | Static Characteristics | Static Characteristics | Static Characteristics | Static Characteristics | Static Characteristics | Static Characteristics |
| BV DSS | Drain-Source Breakdown Voltage | V GS = 0V, I D = 250μA | 20 | - | - | V |
| Δ BV DSS / Δ T j | Breakdown Voltage Temperature Coefficient | Reference to 25 °C , I D =1mA | - | 0.1 | - | V/ °C |
| R DS(ON) | Static Drain-Source On-Resistance 2 | V GS = 4.5V, I D = 4A | - | 21 | 25 | m Ω |
| V GS = 2.5V, I D = 3A | - | 27 | 35 | m Ω | ||
| V GS(th) | Gate Threshold Voltage | V DS = V GS , I D = 250μA | 0.5 | - | 1.0 | V |
| I DSS | Drain-Source Leakage Current (T j = 25 °C ) | V DS =20V, V GS = 0V | - | - | 1 | μA |
| I DSS | Drain-Source Leakage Current (T j = 70 °C ) | V DS =20V, V GS = 0V | - | - | 25 | μA |
| I GSS | Gate-Source Leakage | V GS = ± 10V | - | - | ± 10 | μA |
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| I S | Continuous Source Current (Body Diode) | V D = V G = 0V, V S = 1.2V | - | - | 0.83 | A |
| V SD | Forward On Voltage 2 | T j = 25 °C , I S = 1.25A, V GS = 0V | - | - | 1.2 | V |
FSC'
Properties
- Source-Drain Diode Notes : 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦ 300us, duty cycle ≦ 2%. 3. Surface mounted on 1 in 2 copper pad of FR4 board ; 208 °C /W when mounted on Min. copper pad. For Reference Onl
FS8205A Absolute Maximum Ratings
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | ± 12 | V |
| ID @TA= 25 °C | Continuous Drain Current3 | 6 | A |
| ID @TA= 70 °C | Continuous Drain Current3 | 5 | A |
| IDM | Pulsed Drain Current1 | 25 | A |
| PD @TA= 25 °C | Total Power Dissipation | 1 | W |
| Linear Derating Factor | 0.008 | W/ °C | |
| TSTG | Storage Temperature Range | -55 to 150 | °C |
| TJ | Operating Junction Temperature Range | -55 to 150 | °C |
Properties
FS8205A Thermal Information
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| Rthj-a | Thermal Resistance Junction-ambient3 | Max. 125 | °C /W |
For Reference Onl
FS8205A Package Information
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- IRF540NPBF – Infineon Technologies, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- SI2337DS – Vishay Intertechnology, P-Channel Power MOSFET
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
Ask your AI agent about the FS8205A
Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.
claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp
Then ask: "Can the FS8205A run from my 12 V rail? Check it against the datasheet limits."
Create a free account $2 of usage every month, no card needed.