DMN62D0UT
N-CHANNEL ENHANCEMENT MODE MOSFETThe DMN62D0UT is a n-channel enhancement mode mosfet from Diodes Incorporated. View the full DMN62D0UT datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.
DMN62D0UT shares its datasheet with DMN62D0UT4, whose page lists every part number it covers.
Official DMN62D0UT datasheet (PDF) — the source this page was extracted from.
DMN62D0UT Key Specifications
| Parameter | Value |
|---|---|
| ESD Protection | Up to 1kV |
| Gate Threshold Voltage | 0.5V to 1.0V |
| Power Dissipation (PD) | 230mW to 340mW |
| RDS(ON) Max @ VGS=1.8V | 3.0Ω |
| RDS(ON) Max @ VGS=2.5V | 2.5Ω |
| RDS(ON) Max @ VGS=4.5V | 2Ω |
| Total Gate Charge (Qg) | 0.5nC |
| Input Capacitance (Ciss) | 32pF |
| Gate-Source Voltage (VGSS) | ±20V |
| Pulsed Drain Current (IDM) | 1.2A |
| Drain-Source Voltage (VDSS) | 60V |
| Operating Temperature Range | -55°C to +150°C |
| Continuous Drain Current (ID, TA=+25°C) | 320mA |
DMN62D0UT Overview
Part: DMN62D0UT — Diodes Incorporated
Type: N-CHANNEL ENHANCEMENT MODE MOSFET
Description: 60V Drain-Source Voltage, 320mA continuous drain current N-channel enhancement mode MOSFET with low on-state resistance and fast switching speed, ideal for high-efficiency power management applications.
Operating Conditions:
- Gate-Source Voltage: ±20 V
- Operating temperature: -55 to +150 °C
- Max Drain-Source Voltage: 60 V
Absolute Maximum Ratings:
- Max supply voltage (Drain-Source): 60 V
- Max continuous drain current: 320 mA (T_A = +25°C, V_GS = 4.5V)
- Max junction/storage temperature: 150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BV_DSS): 60 V (V_GS = 0V, I_D = 10μA)
- Gate Threshold Voltage (V_GS(TH)): 0.5 V min, 1.0 V max (V_DS = 10V, I_D = 250μA)
- Static Drain-Source On-Resistance (R_DS(ON)): 1.2 Ω typ, 2.0 Ω max (V_GS = 4.5V, I_D = 0.1A)
- Zero Gate Voltage Drain Current (I_DSS): 1.0 μA max (V_DS = 60V, V_GS = 0V)
- Input Capacitance (C_iss): 32 pF typ (V_DS = 30V, V_GS = 0V, f = 1.0MHz)
- Total Gate Charge (Qg): 0.5 nC typ (V_GS = 4.5V, V_DS = 10V, I_D = 250mA)
- Turn-On Delay Time (t_D(ON)): 2.4 ns typ (V_DD = 30V, V_GS = 10V, R_G = 25Ω, I_D = 200mA)
Features:
- Low On-Resistance: R_DS(ON)
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Up To 1kV
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. 'Green' Device
Applications:
- Motor Control
- Power Management Functions
Package:
- SOT523
DMN62D0UT Features
- Low On-Resistance: RDS(ON)
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Up To 1kV
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. 'Green' Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.
DMN62D0UT Applications
- Motor Control
- Power Management Functions
DMN62D0UT Pin Configuration
DMN62D0UT — SOT523 Package
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | G | I | Gate |
| 2 | S | P | Source |
| 3 | D | P | Drain |
Notes
- SOT523 package: 3-pin surface-mount package for N-channel enhancement mode MOSFET
- Pin 2 (Source) is the exposed pad on the bottom of the package
- ESD Protection: Device is ESD protected up to 1kV
- RoHS Compliant: Fully lead-free and RoHS 2/3 compliant
DMN62D0UT Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 7) | ||||||
| Drain-Source Breakdown Voltage | BV DSS | 60 | - | - | V | V GS = 0V, I D = 10μA |
| Zero Gate Voltage Drain Current | I DSS | - | - | 1.0 | μA | V DS = 60V, V GS = 0V |
| Gate-Source Leakage | I GSS | - | - | ±10 | μA | V GS = ±20V, V DS = 0V |
| ON CHARACTERISTICS (Note 7) | ||||||
| Gate Threshold Voltage | V GS(TH) | 0.5 | - | 1.0 | V | V DS = 10V, I D = 250μA |
| Static Drain-Source On-Resistance | R DS(ON) | - | 1.2 1.4 1.8 | 2.0 2.5 3.0 | Ω | V GS = 4.5V, I D = 0.1A V GS = 2.5V, I D = 0.05A V GS = 1.8V, I D = 0.05A |
| Forward Transconductance | \ | Y fs \ | - | 1.8 | - | |
| Diode Forward Voltage | V SD | - | 0.8 | 1.3 | V | V GS = 0V, I S = 115mA |
| DYNAMIC CHARACTERISTICS (Note 8) | ||||||
| Input Capacitance | C iss | - | 32 | - | pF | V DS = 30V, V GS = 0V f = 1.0MHz |
| Output Capacitance | C oss | - | 3.9 | - | pF | V DS = 30V, V GS = 0V f = 1.0MHz |
| Reverse Transfer Capacitance | C rss | - | 2.4 | - | pF | V DS = 30V, V GS = 0V f = 1.0MHz |
| Gate Resistance | R g | - | 101 | - | Ω | f = 1MHz, V GS = 0V, V DS = 0V |
| Total Gate Charge | Qg | - | 0.5 | - | nC | V GS = 4.5V, V DS = 10V, I D = 250mA |
| Gate-Source Charge | Qgs | - | 0.09 | - | nC | V GS = 4.5V, V DS = 10V, I D = 250mA |
| Gate-Drain Charge | Qgd | - | 0.09 | - | nC | |
| Turn-On Delay Time | t D(ON) | - | 2.4 | - | ns | V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA |
| Turn-On Rise Time | t R | - | 2.5 | - | ns | V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA |
| Turn-Off Delay Time | t D(OFF) | - | 22.6 | - | ns | V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA |
| Turn-Off Fall Time | t F | - | 12.5 | - | ns | V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA |
DMN62D0UT Absolute Maximum Ratings
| Characteristic | Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | Drain-Source Voltage | Drain-Source Voltage | V DSS | 60 | V |
| Gate-Source Voltage | Gate-Source Voltage | Gate-Source Voltage | V GSS | ±20 | V |
| Continuous Drain Current (Note 6) V GS = 4.5V | Steady State | T A = +25° C T A = +70° C | I D | 320 260 | mA |
| Maximum Continuous Body Diode Forward Current (Note 6) | Maximum Continuous Body Diode Forward Current (Note 6) | Maximum Continuous Body Diode Forward Current (Note 6) | I S | 320 | mA |
| Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%) | Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%) | Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%) | I DM | 1.2 | A |
DMN62D0UT Thermal Information
| Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|
| Total Power Dissipation (Note 5) | Total Power Dissipation (Note 5) | P D | 230 | mW |
| Thermal Resistance, Junction to Ambient (Note 5) | Steady State | R θJA | 546 | ° C/W |
| Total Power Dissipation (Note 6) | Total Power Dissipation (Note 6) | P D | 340 | mW |
| Thermal Resistance, Junction to Ambient (Note 6) | Steady State | R θJA | 377 | ° C/W |
| Operating and Storage Temperature Range | Operating and Storage Temperature Range | T J, T STG | -55 to +150 | ° C |
DMN62D0UT Package Information
- Case: SOT523
- Case Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208
- Terminal Connections: See Diagram
- Weight: 0.002 grams (Approximate)
Equivalent Circuit
Top View Pin Out
Configuration
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| DMN62D0UT-13 | Diodes Incorporated | SOT523 |
| DMN62D0UT-7 | Diodes Incorporated | SOT523 |
| DMN62D0UT4 | Diodes Incorporated | SOT523 |
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- ISC030N10NM6ATMA1 – Infineon Technologies, N-Channel Power MOSFET
- SI2337DS – Vishay Intertechnology, P-Channel Power MOSFET
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