DMN62D0UT4
N-CHANNEL ENHANCEMENT MODE MOSFETThe DMN62D0UT4 is a n-channel enhancement mode mosfet from Diodes Incorporated. View the full DMN62D0UT4 datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.
Manufacturer
Diodes Incorporated
Category
N-CHANNEL ENHANCEMENT MODE MOSFET
Package
SOT523
Key Specifications
| Parameter | Value |
|---|---|
| Gate-Source Voltage | ±20V |
| On-Resistance (Max) | 2.0Ω @VGS = 4.5V, 2.5Ω @VGS = 2.5V |
| Drain-Source Voltage | 60V |
| Total Power Dissipation | 340mW |
| Continuous Drain Current | 320mA |
| Operating Temperature Range | -55°C to +150°C |
| Package Dimensions (SOT523) | Length: 1.50-1.70mm, Width: 1.45-1.75mm, Height: 0.60-0.80mm |
Overview
Part: DMN62D0UT — Diodes Incorporated
Type: N-CHANNEL ENHANCEMENT MODE MOSFET
Description: 60V Drain-Source Voltage, 320mA continuous drain current N-channel enhancement mode MOSFET with low on-state resistance and fast switching speed, ideal for high-efficiency power management applications.
Operating Conditions:
- Gate-Source Voltage: ±20 V
- Operating temperature: -55 to +150 °C
- Max Drain-Source Voltage: 60 V
Absolute Maximum Ratings:
- Max supply voltage (Drain-Source): 60 V
- Max continuous drain current: 320 mA (T_A = +25°C, V_GS = 4.5V)
- Max junction/storage temperature: 150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BV_DSS): 60 V (V_GS = 0V, I_D = 10μA)
- Gate Threshold Voltage (V_GS(TH)): 0.5 V min, 1.0 V max (V_DS = 10V, I_D = 250μA)
- Static Drain-Source On-Resistance (R_DS(ON)): 1.2 Ω typ, 2.0 Ω max (V_GS = 4.5V, I_D = 0.1A)
- Zero Gate Voltage Drain Current (I_DSS): 1.0 μA max (V_DS = 60V, V_GS = 0V)
- Input Capacitance (C_iss): 32 pF typ (V_DS = 30V, V_GS = 0V, f = 1.0MHz)
- Total Gate Charge (Qg): 0.5 nC typ (V_GS = 4.5V, V_DS = 10V, I_D = 250mA)
- Turn-On Delay Time (t_D(ON)): 2.4 ns typ (V_DD = 30V, V_GS = 10V, R_G = 25Ω, I_D = 200mA)
Features:
- Low On-Resistance: R_DS(ON)
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Up To 1kV
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. 'Green' Device
Applications:
- Motor Control
- Power Management Functions
Package:
- SOT523
Features
- Low On-Resistance: RDS(ON)
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Up To 1kV
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. 'Green' Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.
Applications
- Motor Control
- Power Management Functions
Pin Configuration
DMN62D0UT4 – SOT523 Package
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | Gate (G) | I | Gate terminal |
| 2 | Drain (D) | O | Drain terminal |
| 3 | Source (S) | O | Source terminal |
Notes
- Part Number Clarification: The requested part number "DMN62D0UT4" does not appear in the datasheet's ordering information. The datasheet lists only DMN62D0UT-7 and DMN62D0UT-13, both in SOT523 package. The pinout above is for the SOT523 package variant and applies to both listed part numbers.
- SOT523 Package: This is a 3-pin small-outline transistor package.
- Device Type: N-channel enhancement mode MOSFET with integrated body diode.
- Pin Diagram Source: Pin numbers extracted from the "Top View Pin Out" diagram in the datasheet.
Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 7) | ||||||
| Drain-Source Breakdown Voltage | BV DSS | 60 | - | - | V | V GS = 0V, I D = 10μA |
| Zero Gate Voltage Drain Current | I DSS | - | - | 1.0 | μA | V DS = 60V, V GS = 0V |
| Gate-Source Leakage | I GSS | - | - | ±10 | μA | V GS = ±20V, V DS = 0V |
| ON CHARACTERISTICS (Note 7) | ||||||
| Gate Threshold Voltage | V GS(TH) | 0.5 | - | 1.0 | V | V DS = 10V, I D = 250μA |
| Static Drain-Source On-Resistance | R DS(ON) | - | 1.2 1.4 1.8 | 2.0 2.5 3.0 | Ω | V GS = 4.5V, I D = 0.1A V GS = 2.5V, I D = 0.05A V GS = 1.8V, I D = 0.05A |
| Forward Transconductance | \ | Y fs \ | - | 1.8 | - | |
| Diode Forward Voltage | V SD | - | 0.8 | 1.3 | V | V GS = 0V, I S = 115mA |
| DYNAMIC CHARACTERISTICS (Note 8) | ||||||
| Input Capacitance | C iss | - | 32 | - | pF | V DS = 30V, V GS = 0V f = 1.0MHz |
| Output Capacitance | C oss | - | 3.9 | - | pF | V DS = 30V, V GS = 0V f = 1.0MHz |
| Reverse Transfer Capacitance | C rss | - | 2.4 | - | pF | V DS = 30V, V GS = 0V f = 1.0MHz |
| Gate Resistance | R g | - | 101 | - | Ω | f = 1MHz, V GS = 0V, V DS = 0V |
| Total Gate Charge | Qg | - | 0.5 | - | nC | V GS = 4.5V, V DS = 10V, I D = 250mA |
| Gate-Source Charge | Qgs | - | 0.09 | - | nC | V GS = 4.5V, V DS = 10V, I D = 250mA |
| Gate-Drain Charge | Qgd | - | 0.09 | - | nC | |
| Turn-On Delay Time | t D(ON) | - | 2.4 | - | ns | V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA |
| Turn-On Rise Time | t R | - | 2.5 | - | ns | V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA |
| Turn-Off Delay Time | t D(OFF) | - | 22.6 | - | ns | V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA |
| Turn-Off Fall Time | t F | - | 12.5 | - | ns | V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA |
Absolute Maximum Ratings
| Characteristic | Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | Drain-Source Voltage | Drain-Source Voltage | V DSS | 60 | V |
| Gate-Source Voltage | Gate-Source Voltage | Gate-Source Voltage | V GSS | ±20 | V |
| Continuous Drain Current (Note 6) V GS = 4.5V | Steady State | T A = +25° C T A = +70° C | I D | 320 260 | mA |
| Maximum Continuous Body Diode Forward Current (Note 6) | Maximum Continuous Body Diode Forward Current (Note 6) | Maximum Continuous Body Diode Forward Current (Note 6) | I S | 320 | mA |
| Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%) | Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%) | Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%) | I DM | 1.2 | A |
Thermal Information
| Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|
| Total Power Dissipation (Note 5) | Total Power Dissipation (Note 5) | P D | 230 | mW |
| Thermal Resistance, Junction to Ambient (Note 5) | Steady State | R θJA | 546 | ° C/W |
| Total Power Dissipation (Note 6) | Total Power Dissipation (Note 6) | P D | 340 | mW |
| Thermal Resistance, Junction to Ambient (Note 6) | Steady State | R θJA | 377 | ° C/W |
| Operating and Storage Temperature Range | Operating and Storage Temperature Range | T J, T STG | -55 to +150 | ° C |
Package Information
- Case: SOT523
- Case Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208
- Terminal Connections: See Diagram
- Weight: 0.002 grams (Approximate)
Equivalent Circuit
Top View Pin Out
Configuration
Ordering Information
| Part Number | Case | Packaging |
|---|---|---|
| DMN62D0UT-7 | SOT523 | 3,000/Tape & Reel |
| DMN62D0UT-13 | SOT523 | 10,000/Tape & Reel |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| DMN62D0UT | Diodes Incorporated | — |
| DMN62D0UT-13 | Diodes Incorporated | SOT523 |
| DMN62D0UT-7 | Diodes Incorporated | SOT523 |
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