DMN62D0UT4
N-CHANNEL ENHANCEMENT MODE MOSFETThe DMN62D0UT4 is a n-channel enhancement mode mosfet from Diodes Incorporated. View the full DMN62D0UT4 datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.
Official DMN62D0UT4 datasheet (PDF) — the source this page was extracted from.
DMN62D0UT4 Key Specifications
| Parameter | Value |
|---|---|
| Gate-Source Voltage | ±20V |
| On-Resistance (Max) | 2.0Ω @VGS = 4.5V, 2.5Ω @VGS = 2.5V |
| Drain-Source Voltage | 60V |
| Total Power Dissipation | 340mW |
| Continuous Drain Current | 320mA |
| Operating Temperature Range | -55°C to +150°C |
| Package Dimensions (SOT523) | Length: 1.50-1.70mm, Width: 1.45-1.75mm, Height: 0.60-0.80mm |
DMN62D0UT4 Overview
Part: DMN62D0UT — Diodes Incorporated
Type: N-CHANNEL ENHANCEMENT MODE MOSFET
Description: 60V Drain-Source Voltage, 320mA continuous drain current N-channel enhancement mode MOSFET with low on-state resistance and fast switching speed, ideal for high-efficiency power management applications.
Operating Conditions:
- Gate-Source Voltage: ±20 V
- Operating temperature: -55 to +150 °C
- Max Drain-Source Voltage: 60 V
Absolute Maximum Ratings:
- Max supply voltage (Drain-Source): 60 V
- Max continuous drain current: 320 mA (T_A = +25°C, V_GS = 4.5V)
- Max junction/storage temperature: 150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BV_DSS): 60 V (V_GS = 0V, I_D = 10μA)
- Gate Threshold Voltage (V_GS(TH)): 0.5 V min, 1.0 V max (V_DS = 10V, I_D = 250μA)
- Static Drain-Source On-Resistance (R_DS(ON)): 1.2 Ω typ, 2.0 Ω max (V_GS = 4.5V, I_D = 0.1A)
- Zero Gate Voltage Drain Current (I_DSS): 1.0 μA max (V_DS = 60V, V_GS = 0V)
- Input Capacitance (C_iss): 32 pF typ (V_DS = 30V, V_GS = 0V, f = 1.0MHz)
- Total Gate Charge (Qg): 0.5 nC typ (V_GS = 4.5V, V_DS = 10V, I_D = 250mA)
- Turn-On Delay Time (t_D(ON)): 2.4 ns typ (V_DD = 30V, V_GS = 10V, R_G = 25Ω, I_D = 200mA)
Features:
- Low On-Resistance: R_DS(ON)
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Up To 1kV
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. 'Green' Device
Applications:
- Motor Control
- Power Management Functions
Package:
- SOT523
DMN62D0UT4 Features
- Low On-Resistance: RDS(ON)
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Up To 1kV
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. 'Green' Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.
DMN62D0UT4 Applications
- Motor Control
- Power Management Functions
DMN62D0UT4 Pin Configuration
DMN62D0UT4 Pinout – SOT523 Package
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | G | I | Gate |
| 2 | S | P | Source |
| 3 | D | P | Drain |
Notes
- Part Number Clarification: The requested part number "DMN62D0UT4" does not appear in the datasheet's Ordering Information table. The datasheet lists only two variants: DMN62D0UT-7 and DMN62D0UT-13, both in SOT523 package with identical pinouts. The pinout above is for the DMN62D0UT family in SOT523 package and applies to both listed variants.
- SOT523 Package: This is a 3-pin small-outline package. Pin 1 is Gate, Pin 2 is Source (connected to substrate), and Pin 3 is Drain.
- Device Type: N-channel enhancement-mode MOSFET with integrated body diode.
DMN62D0UT4 Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 7) | ||||||
| Drain-Source Breakdown Voltage | BV DSS | 60 | - | - | V | V GS = 0V, I D = 10μA |
| Zero Gate Voltage Drain Current | I DSS | - | - | 1.0 | μA | V DS = 60V, V GS = 0V |
| Gate-Source Leakage | I GSS | - | - | ±10 | μA | V GS = ±20V, V DS = 0V |
| ON CHARACTERISTICS (Note 7) | ||||||
| Gate Threshold Voltage | V GS(TH) | 0.5 | - | 1.0 | V | V DS = 10V, I D = 250μA |
| Static Drain-Source On-Resistance | R DS(ON) | - | 1.2 1.4 1.8 | 2.0 2.5 3.0 | Ω | V GS = 4.5V, I D = 0.1A V GS = 2.5V, I D = 0.05A V GS = 1.8V, I D = 0.05A |
| Forward Transconductance | \ | Y fs \ | - | 1.8 | - | |
| Diode Forward Voltage | V SD | - | 0.8 | 1.3 | V | V GS = 0V, I S = 115mA |
| DYNAMIC CHARACTERISTICS (Note 8) | ||||||
| Input Capacitance | C iss | - | 32 | - | pF | V DS = 30V, V GS = 0V f = 1.0MHz |
| Output Capacitance | C oss | - | 3.9 | - | pF | V DS = 30V, V GS = 0V f = 1.0MHz |
| Reverse Transfer Capacitance | C rss | - | 2.4 | - | pF | V DS = 30V, V GS = 0V f = 1.0MHz |
| Gate Resistance | R g | - | 101 | - | Ω | f = 1MHz, V GS = 0V, V DS = 0V |
| Total Gate Charge | Qg | - | 0.5 | - | nC | V GS = 4.5V, V DS = 10V, I D = 250mA |
| Gate-Source Charge | Qgs | - | 0.09 | - | nC | V GS = 4.5V, V DS = 10V, I D = 250mA |
| Gate-Drain Charge | Qgd | - | 0.09 | - | nC | |
| Turn-On Delay Time | t D(ON) | - | 2.4 | - | ns | V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA |
| Turn-On Rise Time | t R | - | 2.5 | - | ns | V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA |
| Turn-Off Delay Time | t D(OFF) | - | 22.6 | - | ns | V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA |
| Turn-Off Fall Time | t F | - | 12.5 | - | ns | V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA |
DMN62D0UT4 Absolute Maximum Ratings
| Characteristic | Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | Drain-Source Voltage | Drain-Source Voltage | V DSS | 60 | V |
| Gate-Source Voltage | Gate-Source Voltage | Gate-Source Voltage | V GSS | ±20 | V |
| Continuous Drain Current (Note 6) V GS = 4.5V | Steady State | T A = +25° C T A = +70° C | I D | 320 260 | mA |
| Maximum Continuous Body Diode Forward Current (Note 6) | Maximum Continuous Body Diode Forward Current (Note 6) | Maximum Continuous Body Diode Forward Current (Note 6) | I S | 320 | mA |
| Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%) | Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%) | Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%) | I DM | 1.2 | A |
DMN62D0UT4 Thermal Information
| Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|
| Total Power Dissipation (Note 5) | Total Power Dissipation (Note 5) | P D | 230 | mW |
| Thermal Resistance, Junction to Ambient (Note 5) | Steady State | R θJA | 546 | ° C/W |
| Total Power Dissipation (Note 6) | Total Power Dissipation (Note 6) | P D | 340 | mW |
| Thermal Resistance, Junction to Ambient (Note 6) | Steady State | R θJA | 377 | ° C/W |
| Operating and Storage Temperature Range | Operating and Storage Temperature Range | T J, T STG | -55 to +150 | ° C |
DMN62D0UT4 Package Information
- Case: SOT523
- Case Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208
- Terminal Connections: See Diagram
- Weight: 0.002 grams (Approximate)
Equivalent Circuit
Top View Pin Out
Configuration
DMN62D0UT4 Ordering Information
| Part Number | Case | Packaging |
|---|---|---|
| DMN62D0UT-7 | SOT523 | 3,000/Tape & Reel |
| DMN62D0UT-13 | SOT523 | 10,000/Tape & Reel |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| DMN62D0UT | Diodes Incorporated | SOT523 |
| DMN62D0UT-13 | Diodes Incorporated | SOT523 |
| DMN62D0UT-7 | Diodes Incorporated | SOT523 |
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- ISC030N10NM6ATMA1 – Infineon Technologies, N-Channel Power MOSFET
- SI2337DS – Vishay Intertechnology, P-Channel Power MOSFET
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
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