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DMN62D0UT-13

N-CHANNEL ENHANCEMENT MODE MOSFET

The DMN62D0UT-13 is a n-channel enhancement mode mosfet from Diodes Incorporated. View the full DMN62D0UT-13 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

DMN62D0UT-13 shares its datasheet with DMN62D0UT4, whose page lists every part number it covers.

Official DMN62D0UT-13 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Diodes Incorporated

Category

MOSFETs

Package

SOT523

DMN62D0UT-13 Key Specifications

ParameterValue
PackageSOT523
ESD ProtectionUp to 1kV
Power Dissipation (PD)230mW to 340mW
Total Gate Charge (Qg)0.5nC typ
RDS(ON) Max At VGS=1.8V3.0Ω (ID=0.05A)
RDS(ON) Max At VGS=2.5V2.5Ω (ID=0.05A)
RDS(ON) Max At VGS=4.5V2.0Ω (ID=0.1A)
Input Capacitance (Ciss)32pF typ
Gate-Source Voltage (VGSS)±20V
Pulsed Drain Current (IDM)1.2A
Drain-Source Voltage (VDSS)60V
Operating Temperature Range-55°C to +150°C
Gate Threshold Voltage (VGS(TH))0.5V to 1.0V
Continuous Drain Current (ID, TA=+25°C)320mA

DMN62D0UT-13 Overview

Part: DMN62D0UT — Diodes Incorporated

Type: N-CHANNEL ENHANCEMENT MODE MOSFET

Description: 60V Drain-Source Voltage, 320mA continuous drain current N-channel enhancement mode MOSFET with low on-state resistance and fast switching speed, ideal for high-efficiency power management applications.

Operating Conditions:

  • Gate-Source Voltage: ±20 V
  • Operating temperature: -55 to +150 °C
  • Max Drain-Source Voltage: 60 V

Absolute Maximum Ratings:

  • Max supply voltage (Drain-Source): 60 V
  • Max continuous drain current: 320 mA (T_A = +25°C, V_GS = 4.5V)
  • Max junction/storage temperature: 150 °C

Key Specs:

  • Drain-Source Breakdown Voltage (BV_DSS): 60 V (V_GS = 0V, I_D = 10μA)
  • Gate Threshold Voltage (V_GS(TH)): 0.5 V min, 1.0 V max (V_DS = 10V, I_D = 250μA)
  • Static Drain-Source On-Resistance (R_DS(ON)): 1.2 Ω typ, 2.0 Ω max (V_GS = 4.5V, I_D = 0.1A)
  • Zero Gate Voltage Drain Current (I_DSS): 1.0 μA max (V_DS = 60V, V_GS = 0V)
  • Input Capacitance (C_iss): 32 pF typ (V_DS = 30V, V_GS = 0V, f = 1.0MHz)
  • Total Gate Charge (Qg): 0.5 nC typ (V_GS = 4.5V, V_DS = 10V, I_D = 250mA)
  • Turn-On Delay Time (t_D(ON)): 2.4 ns typ (V_DD = 30V, V_GS = 10V, R_G = 25Ω, I_D = 200mA)

Features:

  • Low On-Resistance: R_DS(ON)
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Up To 1kV
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. 'Green' Device

Applications:

  • Motor Control
  • Power Management Functions

Package:

  • SOT523

DMN62D0UT-13 Features

  • Low On-Resistance: RDS(ON)
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Up To 1kV
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. 'Green' Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.

https://www.diodes.com/quality/product-definitions/

DMN62D0UT-13 Applications

  • Motor Control
  • Power Management Functions

DMN62D0UT-13 Electrical Characteristics

CharacteristicSymbolMinTypMaxUnitTest Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown VoltageBV DSS60--VV GS = 0V, I D = 10μA
Zero Gate Voltage Drain CurrentI DSS--1.0μAV DS = 60V, V GS = 0V
Gate-Source LeakageI GSS--±10μAV GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold VoltageV GS(TH)0.5-1.0VV DS = 10V, I D = 250μA
Static Drain-Source On-ResistanceR DS(ON)-1.2 1.4 1.82.0 2.5 3.0ΩV GS = 4.5V, I D = 0.1A V GS = 2.5V, I D = 0.05A V GS = 1.8V, I D = 0.05A
Forward Transconductance\Y fs \-1.8-
Diode Forward VoltageV SD-0.81.3VV GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input CapacitanceC iss-32-pFV DS = 30V, V GS = 0V f = 1.0MHz
Output CapacitanceC oss-3.9-pFV DS = 30V, V GS = 0V f = 1.0MHz
Reverse Transfer CapacitanceC rss-2.4-pFV DS = 30V, V GS = 0V f = 1.0MHz
Gate ResistanceR g-101-Ωf = 1MHz, V GS = 0V, V DS = 0V
Total Gate ChargeQg-0.5-nCV GS = 4.5V, V DS = 10V, I D = 250mA
Gate-Source ChargeQgs-0.09-nCV GS = 4.5V, V DS = 10V, I D = 250mA
Gate-Drain ChargeQgd-0.09-nC
Turn-On Delay Timet D(ON)-2.4-nsV DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA
Turn-On Rise Timet R-2.5-nsV DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA
Turn-Off Delay Timet D(OFF)-22.6-nsV DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA
Turn-Off Fall Timet F-12.5-nsV DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA

DMN62D0UT-13 Absolute Maximum Ratings

CharacteristicCharacteristicCharacteristicSymbolValueUnit
Drain-Source VoltageDrain-Source VoltageDrain-Source VoltageV DSS60V
Gate-Source VoltageGate-Source VoltageGate-Source VoltageV GSS±20V
Continuous Drain Current (Note 6) V GS = 4.5VSteady StateT A = +25° C T A = +70° CI D320 260mA
Maximum Continuous Body Diode Forward Current (Note 6)Maximum Continuous Body Diode Forward Current (Note 6)Maximum Continuous Body Diode Forward Current (Note 6)I S320mA
Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%)Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%)Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%)I DM1.2A

DMN62D0UT-13 Thermal Information

CharacteristicCharacteristicSymbolValueUnit
Total Power Dissipation (Note 5)Total Power Dissipation (Note 5)P D230mW
Thermal Resistance, Junction to Ambient (Note 5)Steady StateR θJA546° C/W
Total Power Dissipation (Note 6)Total Power Dissipation (Note 6)P D340mW
Thermal Resistance, Junction to Ambient (Note 6)Steady StateR θJA377° C/W
Operating and Storage Temperature RangeOperating and Storage Temperature RangeT J, T STG-55 to +150° C

DMN62D0UT-13 Package Information

  • Case: SOT523
  • Case Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208
  • Terminal Connections: See Diagram
  • Weight: 0.002 grams (Approximate)

Equivalent Circuit

Top View Pin Out

Configuration

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
DMN62D0UTDiodes IncorporatedSOT523
DMN62D0UT-7Diodes IncorporatedSOT523
DMN62D0UT4Diodes IncorporatedSOT523

Other MOSFETs

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  • AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
  • 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
  • DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
  • DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
  • ISC030N10NM6ATMA1 – Infineon Technologies, N-Channel Power MOSFET
  • SI2337DS – Vishay Intertechnology, P-Channel Power MOSFET

All MOSFETs datasheetsAll Diodes datasheets (217)

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