DMN62D0UT-13

N-CHANNEL ENHANCEMENT MODE MOSFET

The DMN62D0UT-13 is a n-channel enhancement mode mosfet from Diodes Incorporated. View the full DMN62D0UT-13 datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Diodes Incorporated

Overview

Part: DMN62D0UT — Diodes Incorporated

Type: N-CHANNEL ENHANCEMENT MODE MOSFET

Description: 60V Drain-Source Voltage, 320mA continuous drain current N-channel enhancement mode MOSFET with low on-state resistance and fast switching speed, ideal for high-efficiency power management applications.

Operating Conditions:

Gate-Source Voltage: ±20 V
Operating temperature: -55 to +150 °C
Max Drain-Source Voltage: 60 V

Absolute Maximum Ratings:

Max supply voltage (Drain-Source): 60 V
Max continuous drain current: 320 mA (T_A = +25°C, V_GS = 4.5V)
Max junction/storage temperature: 150 °C

Key Specs:

Drain-Source Breakdown Voltage (BV_DSS): 60 V (V_GS = 0V, I_D = 10μA)
Gate Threshold Voltage (V_GS(TH)): 0.5 V min, 1.0 V max (V_DS = 10V, I_D = 250μA)
Static Drain-Source On-Resistance (R_DS(ON)): 1.2 Ω typ, 2.0 Ω max (V_GS = 4.5V, I_D = 0.1A)
Zero Gate Voltage Drain Current (I_DSS): 1.0 μA max (V_DS = 60V, V_GS = 0V)
Input Capacitance (C_iss): 32 pF typ (V_DS = 30V, V_GS = 0V, f = 1.0MHz)
Total Gate Charge (Qg): 0.5 nC typ (V_GS = 4.5V, V_DS = 10V, I_D = 250mA)
Turn-On Delay Time (t_D(ON)): 2.4 ns typ (V_DD = 30V, V_GS = 10V, R_G = 25Ω, I_D = 200mA)

Features:

Low On-Resistance: R_DS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 1kV
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. 'Green' Device

Applications:

Motor Control
Power Management Functions

Package:

SOT523

Features

Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 1kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. 'Green' Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.

https://www.diodes.com/quality/product-definitions/

Applications

Motor Control
Power Management Functions

Electrical Characteristics

Characteristic	Symbol	Min	Typ	Max	Unit	Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage	BV DSS	60	-	-	V	V GS = 0V, I D = 10μA
Zero Gate Voltage Drain Current	I DSS	-	-	1.0	μA	V DS = 60V, V GS = 0V
Gate-Source Leakage	I GSS	-	-	±10	μA	V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage	V GS(TH)	0.5	-	1.0	V	V DS = 10V, I D = 250μA
Static Drain-Source On-Resistance	R DS(ON)	-	1.2 1.4 1.8	2.0 2.5 3.0	Ω	V GS = 4.5V, I D = 0.1A V GS = 2.5V, I D = 0.05A V GS = 1.8V, I D = 0.05A
Forward Transconductance	\	Y fs \		-	1.8	-
Diode Forward Voltage	V SD	-	0.8	1.3	V	V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance	C iss	-	32	-	pF	V DS = 30V, V GS = 0V f = 1.0MHz
Output Capacitance	C oss	-	3.9	-	pF	V DS = 30V, V GS = 0V f = 1.0MHz
Reverse Transfer Capacitance	C rss	-	2.4	-	pF	V DS = 30V, V GS = 0V f = 1.0MHz
Gate Resistance	R g	-	101	-	Ω	f = 1MHz, V GS = 0V, V DS = 0V
Total Gate Charge	Qg	-	0.5	-	nC	V GS = 4.5V, V DS = 10V, I D = 250mA
Gate-Source Charge	Qgs	-	0.09	-	nC	V GS = 4.5V, V DS = 10V, I D = 250mA
Gate-Drain Charge	Qgd	-	0.09	-	nC
Turn-On Delay Time	t D(ON)	-	2.4	-	ns	V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA
Turn-On Rise Time	t R	-	2.5	-	ns	V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA
Turn-Off Delay Time	t D(OFF)	-	22.6	-	ns	V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA
Turn-Off Fall Time	t F	-	12.5	-	ns	V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA

Absolute Maximum Ratings

Characteristic	Characteristic	Characteristic	Symbol	Value	Unit
Drain-Source Voltage	Drain-Source Voltage	Drain-Source Voltage	V DSS	60	V
Gate-Source Voltage	Gate-Source Voltage	Gate-Source Voltage	V GSS	±20	V
Continuous Drain Current (Note 6) V GS = 4.5V	Steady State	T A = +25° C T A = +70° C	I D	320 260	mA
Maximum Continuous Body Diode Forward Current (Note 6)	Maximum Continuous Body Diode Forward Current (Note 6)	Maximum Continuous Body Diode Forward Current (Note 6)	I S	320	mA
Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%)	Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%)	Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%)	I DM	1.2	A

Thermal Information

Characteristic	Characteristic	Symbol	Value	Unit
Total Power Dissipation (Note 5)	Total Power Dissipation (Note 5)	P D	230	mW
Thermal Resistance, Junction to Ambient (Note 5)	Steady State	R θJA	546	° C/W
Total Power Dissipation (Note 6)	Total Power Dissipation (Note 6)	P D	340	mW
Thermal Resistance, Junction to Ambient (Note 6)	Steady State	R θJA	377	° C/W
Operating and Storage Temperature Range	Operating and Storage Temperature Range	T J, T STG	-55 to +150	° C

Package Information

Case: SOT523
Case Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (Approximate)

Equivalent Circuit

Top View Pin Out

Configuration

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
DMN62D0UT	Diodes Incorporated	—
DMN62D0UT-7	Diodes Incorporated	SOT523
DMN62D0UT4	Diodes Incorporated	SOT523

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