FDS6679AZ
P-Channel PowerTrench MOSFETThe FDS6679AZ is a p-channel powertrench mosfet from onsemi. View the full FDS6679AZ datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official FDS6679AZ datasheet (PDF) — the source this page was extracted from.
FDS6679AZ Key Specifications
| Parameter | Value |
|---|---|
| Power Dissipation | 2.5W |
| ESD Protection (HBM) | 6kV typ |
| Pulsed Drain Current | -65A |
| Input Capacitance (Ciss) | 2890pF typ |
| Gate-Source Voltage (VGS) | ±25V |
| Drain-Source Voltage (VDS) | -30V |
| Operating Temperature Range | -55°C to +150°C |
| RDS(On) At VGS=-10V, ID=-13A | 7.7mΩ typ, 9.3mΩ max |
| Total Gate Charge (VGS=-10V) | 68nC typ, 96nC max |
| Continuous Drain Current (ID) | -13A |
| RDS(On) At VGS=-4.5V, ID=-11A | 11.8mΩ typ, 14.8mΩ max |
| Gate Threshold Voltage (VGS(Th)) | -1V to -3V |
| Thermal Resistance Junction-To-Case | 25°C/W |
| Thermal Resistance Junction-To-Ambient | 50°C/W |
FDS6679AZ Overview
Part: FDS6679AZ — ON Semiconductor (onsemi)
Type: P-Channel PowerTrench MOSFET
Description: -30 V, -13 A P-channel PowerTrench MOSFET with max rDS(on) of 9.3 mΩ at VGS = -10 V, extended ±25 V VGS range and 6 kV typical HBM ESD protection.
Operating Conditions:
- Supply voltage: not applicable
- Operating temperature: -55 to +150 °C (operating and storage junction temperature)
- Drain-source voltage: up to -30 V; gate-source voltage up to ±25 V
Absolute Maximum Ratings:
- Drain-source voltage (VDS): -30 V
- Gate-source voltage (VGS): ±25 V
- Continuous drain current (ID): -13 A (TA = 25 °C)
- Pulsed drain current: -65 A
- Max junction/storage temperature: -55 to +150 °C
Key Specs:
- rDS(on): 7.7 mΩ typ, 9.3 mΩ max (VGS = -10 V, ID = -13 A, TJ = 25 °C)
- rDS(on): 11.8 mΩ typ, 14.8 mΩ max (VGS = -4.5 V, ID = -11 A)
- rDS(on): 10.7 mΩ typ, 13.4 mΩ max (VGS = -10 V, ID = -13 A, TJ = 125 °C)
- VGS(th): -1 V min, -1.9 V typ, -3 V max (VGS = VDS, ID = -250 μA)
- IDSS: -1 μA max (VDS = -24 V, VGS = 0 V); IGSS: ±10 μA max (VGS = ±25 V)
- Ciss: 2890 pF typ, 3845 pF max (VDS = -15 V, VGS = 0 V, 1 MHz)
- Qg: 68 nC typ, 96 nC max (VDS = -15 V, VGS = -10 V, ID = -13 A)
- Turn-off delay td(off): 210 ns typ, 336 ns max (VDD = -15 V, ID = -1 A, VGS = -10 V, RGS = 6 Ω)
- Thermal resistance: RθJA 50 °C/W (1 in² 2 oz Cu pad), RθJC 25 °C/W
Features:
- Max rDS(on) = 9.3 mΩ at VGS = -10 V, ID = -13 A
- Max rDS(on) = 14.8 mΩ at VGS = -4.5 V, ID = -11 A
- Extended VGS range (-25 V) for battery applications
- HBM ESD protection level of 6 kV typical
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- RoHS compliant
Applications:
- Power management
- Load switching in notebook computers
- Portable battery packs
Package:
- Supplied on 13" reel, 12 mm tape, 2500 units per reel
FDS6679AZ Features
- Max r DS(on) = 9.3m Ω at V GS = -10V, I D = -13A
- Max r DS(on) = 14.8m Ω at V GS = -4.5V, I D = -11A
- Extended V GS range (-25V) for battery applications
- HBM ESD protection level of 6kV typical (note 3)
- High performance trench technology for extremely low r DS(on)
- High power and current handing capability
- RoHS Compliant
FDS6679AZ Electrical Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Off Characteristics | Off Characteristics | |||||
| B VDSS | Drain to Source Breakdown Voltage | I D = -250 μ A, V GS = 0V | -30 | V | ||
| ∆ B VDSS ∆ T J | Breakdown Voltage Temperature Coefficient | I D = -250 μ A, referenced to 25 ° C | -20 | mV/°C | ||
| I DSS | Zero Gate Voltage Drain Current | V DS = -24V, V GS =0V | -1 | μ A | ||
| I GSS | Gate to Source Leakage Current | V GS = ±25V, V DS =0V | ±10 | μ A |
FDS6679AZ Absolute Maximum Ratings
| Symbol | Parameter | Ratings | Units |
|---|---|---|---|
| V DS | Drain to Source Voltage | -30 | V |
| V GS | Gate to Source Voltage | ±25 | V |
| I D | Drain Current -Continuous | -13 | A |
| I D | -Pulsed | -65 | A |
| P D | Power Dissipation for Single Operation | 2.5 | W |
| P D | 1.2 | ||
| P D | 1.0 | ||
| T J , T STG | Operating and Storage Temperature | -55 to +150 | °C |
FDS6679AZ Thermal Information
| R θ JA | Thermal Resistance , Junction to Ambient (Note 1a) | 50 | °C/W |
|---|---|---|---|
| R θ JC | Thermal Resistance , Junction to Case (Note 1) | 25 | °C/W |
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- IRF540NPBF – Infineon Technologies, Power MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- 2N7002 – Nexperia, N-channel Trench MOSFET
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