FDS6679AZ
The FDS6679AZ is an electronic component. View the full FDS6679AZ datasheet below including pinout, electrical characteristics, absolute maximum ratings.
Overview
Part: FDS6679AZ — Fairchild Semiconductor
Type: P-Channel PowerTrench® MOSFET
Description: This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process, tailored to minimize on-state resistance, offering -30V drain-to-source voltage and -13A continuous drain current with a maximum rDS(on) of 9.3mΩ.
Operating Conditions:
- Drain to Source Voltage: -30 V
- Operating temperature: -55 to +150 °C
- Max rDS(on): 9.3mΩ at VGS = -10V, ID = -13A
Absolute Maximum Ratings:
- Max supply voltage: -30 V (Drain to Source Voltage)
- Max continuous current: -13 A (Drain Current - Continuous)
- Max junction/storage temperature: +150 °C
Key Specs:
- Drain to Source Breakdown Voltage (BVDSS): -30 V (min) at ID = -250 μA, VGS = 0V
- Zero Gate Voltage Drain Current (IDSS): -1 μA (max) at VDS = -24V, VGS = 0V
- Gate to Source Threshold Voltage (VGS(th)): -1 V (min), -3 V (max) at VGS = VDS, ID = -250 μA
- Drain to Source On Resistance (rDS(on)): 9.3 mΩ (max) at VGS = -10V, ID = -13A
- Drain to Source On Resistance (rDS(on)): 14.8 mΩ (max) at VGS = -4.5V, ID = -11A
- Input Capacitance (Ciss): 3845 pF (max) at VDS = -15V, VGS = 0V, f = 1MHz
- Total Gate Charge (Qg): 96 nC (max) at VDS = -15V, VGS = -10V, ID = -13A
- Source to Drain Diode Forward Voltage (VSD): -1.2 V (max) at VGS = 0V, IS = -2.1A
Features:
- Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
- Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
- Extended VGS range (-25V) for battery applications
- HBM ESD protection level of 6 kV typical
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- RoHS Compliant
Applications:
- Power Management
- Load switching applications common in Notebook Computers
- Portable Battery Packs
Package:
- FDS6679AZ
Features
- Max r DS(on) = 9.3m Ω at V GS = -10V, I D = -13A
- Max r DS(on) = 14.8m Ω at V GS = -4.5V, I D = -11A
- Extended V GS range (-25V) for battery applications
- HBM ESD protection level of 6 k V typical (note 3)
- High performance trench technology for extremely low r DS(on)
- High power and current handing capability
- RoHS Compliant
Pin Configuration
FDS6679AZ Pinout – SO-8 Package
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | D | P | Drain |
| 2 | D | P | Drain |
| 3 | D | P | Drain |
| 4 | D | P | Drain |
| 5 | S | P | Source |
| 6 | S | P | Source |
| 7 | G | I | Gate |
| 8 | S | P | Source |
Notes
- Package: SO-8 (8-pin Small Outline)
- Device Type: P-Channel PowerTrench® MOSFET
- Pin Configuration: Multiple drain pins (1–4) and source pins (5, 6, 8) are connected internally to minimize on-state resistance. Pin 7 is the gate input.
- Polarity: This is a P-channel device; drain and source voltages are negative relative to typical N-channel conventions.
Electrical Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Off Characteristics | Off Characteristics | |||||
| B VDSS | Drain to Source Breakdown Voltage | I D = -250 μ A, V GS = 0V | -30 | V | ||
| ∆ B VDSS ∆ T J | Breakdown Voltage Temperature Coefficient | I D = -250 μ A, referenced to 25° C | -20 | mV/°C | ||
| I DSS | Zero Gate Voltage Drain Current | V DS = -24V, V GS =0V | -1 | μ A | ||
| I GSS | Gate to Source Leakage Current | V GS = ±25V, V DS =0V | ±10 | μ A |
Absolute Maximum Ratings
| Symbol | Parameter | Ratings | Units |
|---|---|---|---|
| V DS | Drain to Source Voltage | -30 | V |
| V GS | Gate to Source Voltage | ±25 | V |
| I D | Drain Current -Continuous | -13 | A |
| I D | -Pulsed | -65 | A |
| P D | Power Dissipation for Single Operation | 2.5 | W |
| P D | 1.2 | ||
| P D | 1.0 | ||
| T J , T STG | Operating and Storage Temperature | -55 to +150 | °C |
Thermal Information
| R θ JA | Thermal Resistance , Junction to Ambient (Note 1a) | 50 | °C/W |
|---|---|---|---|
| R θ JC | Thermal Resistance , Junction to Case (Note 1) | 25 | °C/W |
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