DMP2160UFDBQ
P-Channel Enhancement Mode MOSFETThe DMP2160UFDBQ is a p-channel enhancement mode mosfet from Diodes Incorporated. View the full DMP2160UFDBQ datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
DMP2160UFDBQ shares its datasheet with DMP2160UFDB-7, whose page lists every part number it covers.
Official DMP2160UFDBQ datasheet (PDF) — the source this page was extracted from.
Manufacturer
Diodes IncorporatedCategory
MOSFETsDMP2160UFDBQ Key Specifications
| Parameter | Value |
|---|---|
| Package Size | 2.0mm x 2.0mm |
| Max Package Height | 0.5mm |
| RDS(ON) @ VGS=-1.8V | 86mΩ typ |
| RDS(ON) @ VGS=-2.5V | 85mΩ max (68mΩ typ) |
| RDS(ON) @ VGS=-4.5V | 70mΩ max (54mΩ typ) |
| Power Dissipation (PD) | 1.4W |
| Total Gate Charge (Qg) | 6.5nC |
| Input Capacitance (Ciss) | 536pF |
| Gate-Source Voltage (VGSS) | ±12V |
| Pulsed Drain Current (IDM) | -13A |
| Drain-Source Voltage (VDSS) | -20V |
| Operating Temperature Range | -55°C to +150°C |
| Continuous Drain Current (ID) | -3.8A |
| Gate Threshold Voltage (VGS(TH)) | -0.45V to -0.9V |
| Thermal Resistance Junction-Ambient (RθJA) | 89°C/W |
DMP2160UFDBQ Overview
Part: DMP2160UFDB-7 — Diodes Incorporated
Type: DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Description: Dual P-Channel Enhancement Mode MOSFET with -20V Drain-Source Voltage, -3.8A continuous Drain Current, and low on-resistance of 70mΩ at VGS = -4.5V.
Operating Conditions:
- Gate-Source Voltage: ±12 V
- Drain-Source Voltage: -20 V
- Operating temperature: -55 to +150 °C
- Max continuous drain current: -3.8 A
Absolute Maximum Ratings:
- Max supply voltage: -20 V (Drain-Source Voltage)
- Max continuous current: -3.8 A (Drain Current)
- Max junction/storage temperature: +150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BV DSS): -20 V (V GS = 0V, I D = -250μA)
- Gate Threshold Voltage (V GS(TH)): -0.45 V (Min) to -0.9 V (Max) (V DS = V GS , I D = -250μA)
- Static Drain-Source On-Resistance (R DS(ON)): 70 mΩ (Max) (V GS = -4.5V, I D = -2.8A)
- Zero Gate Voltage Drain Current (I DSS): -1 μA (Max) (V DS = -20V, V GS = 0V)
- Gate-Source Leakage (I GSS): ±100 nA (Max) (V GS = ±8V, V DS = 0V)
- Input Capacitance (C iss): 536 pF (Typ) (V DS = -10V, V GS = 0V, f = 1.0MHz)
- Total Gate Charge (Q g): 6.5 nC (Typ) (V GS = -4.5V, V DD = -10V)
- Turn-On Delay Time (t D(ON)): 11.51 ns (Typ)
Features:
- Low On-Resistance
- Low Gate Threshold Voltage, -0.9V Max
- Fast Switching Speed
- Low Input/Output Leakage
- Low Profile, 0.5mm Max Height
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. 'Green' Device
- Qualified to AEC-Q101 Standards for High Reliability
Package:
- U-DFN2020-6 (Type B)
DMP2160UFDBQ Features
- Low On-Resistance
- 70mΩ @VGS = -4.5V
- 85mΩ @VGS = -2.5V
- 86mΩ (Typ) @VGS = -1.8V
- Low Gate Threshold Voltage, -0.9V Max
- Fast Switching Speed
- Low Input/Output Leakage
- Low Profile, 0.5mm Max Height
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. 'Green' Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- An Automotive-Compliant Part is Available Under Separate Datasheet (DMP2160UFDBQ)
DMP2160UFDBQ Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 7) | ||||||
| Drain-Source Breakdown Voltage | BV DSS | -20 | - | - | V | V GS = 0V, I D = -250μA |
| Zero Gate Voltage Drain Current | I DSS | - | - | -1 | μA | V DS = -20V, V GS = 0V |
| Gate-Source Leakage | I GSS | - - | - | ±100 ±800 | nA | V GS = ±8V, V DS = 0V V GS = ±12V, V DS = 0V |
| ON CHARACTERISTICS (Note 7) | ||||||
| Gate Threshold Voltage | V GS(TH) | -0.45 | - | -0.9 | V | V DS = V GS , I D = -250μA |
| Static Drain-Source On-Resistance | R DS(ON) | - - - | 54 68 86 | 70 85 - | mΩ | V GS = -4.5V, I D = -2.8A V GS = -2.5V, I D = -2.0A V GS = -1.8V, I D = -1.0A |
| Forward Transfer Admittance | \ | Y fs \ | - | 8 | - | |
| Diode Forward Voltage (Note 7) | V SD | - | -0.7 | -1.2 | V | V GS = 0V, I S = -1.6A |
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | C iss | - | 536 | - | pF | V DS = -10V, V GS = 0V f = 1.0MHz |
| Output Capacitance | C oss | - | 68 | - | pF | V DS = -10V, V GS = 0V f = 1.0MHz |
| Reverse Transfer Capacitance | C rss | - | 59 | - | pF | V DS = -10V, V GS = 0V f = 1.0MHz |
| Gate Resistance | R g | - | 34 | - | Ω | V DS = 0V, V GS = 0V, f = 1MHz V GS = -4.5V, V DD = -10V, |
| Total Gate Charge | Q g | - | 6.5 | - | nC | V DS = 0V, V GS = 0V, f = 1MHz V GS = -4.5V, V DD = -10V, |
| Gate-Source Charge | Q gs | - | 0.8 | - | nC | V DS = 0V, V GS = 0V, f = 1MHz V GS = -4.5V, V DD = -10V, |
| Gate-Drain Charge | Q gd | - | 1.4 | - | I nC | D = -1.5A V GEN = -4.5V, V DD = -10V, R L = 10Ω, R G = 6Ω |
| Turn-On Delay Time | t D(ON) | - | 11.51 | - | ns | |
| Turn-On Rise Time | t R | - | 12.09 | - | ns | |
| Turn-Off Delay Time | t D(OFF) | - | 55.34 | - | ns | |
| Turn-Off Fall Time | t F | - | 27.54 | - | ns |
DMP2160UFDBQ Absolute Maximum Ratings
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | V DSS | -20 | V |
| Gate-Source Voltage | V GSS | ±12 | V |
| Drain Current (Note 5) | I D | -3.8 | A |
| Pulsed Drain Current (Note 6) | I DM | -13 | A |
DMP2160UFDBQ Thermal Information
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Power Dissipation (Note 5) | P D | 1.4 | W |
| Thermal Resistance, Junction to Ambient | R ← JA | 89 | ° C/W |
| Operating and Storage Temperature Range | T J , T STG | -55 to +150 | ° C |
DMP2160UFDBQ Package Information
- Case: U-DFN2020-6 (Type B)
- Case Material: Molded Plastic, 'Green' Molding Compound; UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram
- Terminals: Finish - NiPdAu Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4
- Weight: 0.0065 grams (Approximate)
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| DMP2160UFDB | Diodes Incorporated | U-DFN2020-6 |
| DMP2160UFDB-7 | Diodes Incorporated | U-DFN2020-6 (Type B) |
| DMP2160UFDB-7R | Diodes Incorporated | U-DFN2020-6 (Type B) |
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- IRF540NPBF – Infineon Technologies, Power MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- 2N7002 – Nexperia, N-channel Trench MOSFET
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