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DMP2160UFDB-7

P-Channel Enhancement Mode MOSFET

The DMP2160UFDB-7 is a p-channel enhancement mode mosfet from Diodes Incorporated. View the full DMP2160UFDB-7 datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.

Official DMP2160UFDB-7 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Diodes Incorporated

Category

MOSFETs

Package

U-DFN2020-6 (Type B)

DMP2160UFDB-7 Key Specifications

ParameterValue
Package Width2.00 mm
Package Height0.575 mm
Package Length2.00 mm
Power Dissipation1.4 W
Gate-Source Voltage±12 V
On-Resistance (Max)70 mΩ @ VGS = -4.5V
Drain-Source Voltage-20 V
Continuous Drain Current-3.8 A
Operating Temperature Range-55°C to +150°C
Gate Threshold Voltage (Max)-0.9 V

DMP2160UFDB-7 Overview

Part: DMP2160UFDB-7 — Diodes Incorporated

Type: DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Description: Dual P-Channel Enhancement Mode MOSFET with -20V Drain-Source Voltage, -3.8A continuous Drain Current, and low on-resistance of 70mΩ at VGS = -4.5V.

Operating Conditions:

  • Gate-Source Voltage: ±12 V
  • Drain-Source Voltage: -20 V
  • Operating temperature: -55 to +150 °C
  • Max continuous drain current: -3.8 A

Absolute Maximum Ratings:

  • Max supply voltage: -20 V (Drain-Source Voltage)
  • Max continuous current: -3.8 A (Drain Current)
  • Max junction/storage temperature: +150 °C

Key Specs:

  • Drain-Source Breakdown Voltage (BV DSS): -20 V (V GS = 0V, I D = -250μA)
  • Gate Threshold Voltage (V GS(TH)): -0.45 V (Min) to -0.9 V (Max) (V DS = V GS , I D = -250μA)
  • Static Drain-Source On-Resistance (R DS(ON)): 70 mΩ (Max) (V GS = -4.5V, I D = -2.8A)
  • Zero Gate Voltage Drain Current (I DSS): -1 μA (Max) (V DS = -20V, V GS = 0V)
  • Gate-Source Leakage (I GSS): ±100 nA (Max) (V GS = ±8V, V DS = 0V)
  • Input Capacitance (C iss): 536 pF (Typ) (V DS = -10V, V GS = 0V, f = 1.0MHz)
  • Total Gate Charge (Q g): 6.5 nC (Typ) (V GS = -4.5V, V DD = -10V)
  • Turn-On Delay Time (t D(ON)): 11.51 ns (Typ)

Features:

  • Low On-Resistance
  • Low Gate Threshold Voltage, -0.9V Max
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Low Profile, 0.5mm Max Height
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. 'Green' Device
  • Qualified to AEC-Q101 Standards for High Reliability

Package:

  • U-DFN2020-6 (Type B)

DMP2160UFDB-7 Features

  • Low On-Resistance
  • 70mΩ @VGS = -4.5V
  • 85mΩ @VGS = -2.5V
  • 86mΩ (Typ) @VGS = -1.8V
  • Low Gate Threshold Voltage, -0.9V Max
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Low Profile, 0.5mm Max Height
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. 'Green' Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • An Automotive-Compliant Part is Available Under Separate Datasheet (DMP2160UFDBQ)

DMP2160UFDB-7 Pin Configuration

DMP2160UFDB-7 Pinout

Package: U-DFN2020-6 (Type B)

Pin NumberPin NameTypeDescription
1S1SSource (MOSFET 1)
2G1IGate (MOSFET 1)
3D1SDrain (MOSFET 1)
4D2SDrain (MOSFET 2)
5G2IGate (MOSFET 2)
6S2SSource (MOSFET 2)

Notes

  • Dual P-Channel Enhancement Mode MOSFET: This device contains two independent P-channel MOSFETs in a single 6-pin package.
  • Pin 1 Identification: Marked with a dot on the package bottom view (as shown in the diagram).
  • Equivalent Circuit: Each MOSFET includes an integral body diode (shown in the equivalent circuit diagram).
  • Low On-Resistance: 70 mΩ @ VGS = -4.5V, 85 mΩ @ VGS = -2.5V, 86 mΩ @ VGS = -1.8V.
  • Gate Threshold Voltage: -0.9V max.

DMP2160UFDB-7 Electrical Characteristics

CharacteristicSymbolMinTypMaxUnitTest Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown VoltageBV DSS-20--VV GS = 0V, I D = -250μA
Zero Gate Voltage Drain CurrentI DSS---1μAV DS = -20V, V GS = 0V
Gate-Source LeakageI GSS- --±100 ±800nAV GS = ±8V, V DS = 0V V GS = ±12V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold VoltageV GS(TH)-0.45--0.9VV DS = V GS , I D = -250μA
Static Drain-Source On-ResistanceR DS(ON)- - -54 68 8670 85 -mΩV GS = -4.5V, I D = -2.8A V GS = -2.5V, I D = -2.0A V GS = -1.8V, I D = -1.0A
Forward Transfer Admittance\Y fs \-8-
Diode Forward Voltage (Note 7)V SD--0.7-1.2VV GS = 0V, I S = -1.6A
DYNAMIC CHARACTERISTICS
Input CapacitanceC iss-536-pFV DS = -10V, V GS = 0V f = 1.0MHz
Output CapacitanceC oss-68-pFV DS = -10V, V GS = 0V f = 1.0MHz
Reverse Transfer CapacitanceC rss-59-pFV DS = -10V, V GS = 0V f = 1.0MHz
Gate ResistanceR g-34-ΩV DS = 0V, V GS = 0V, f = 1MHz V GS = -4.5V, V DD = -10V,
Total Gate ChargeQ g-6.5-nCV DS = 0V, V GS = 0V, f = 1MHz V GS = -4.5V, V DD = -10V,
Gate-Source ChargeQ gs-0.8-nCV DS = 0V, V GS = 0V, f = 1MHz V GS = -4.5V, V DD = -10V,
Gate-Drain ChargeQ gd-1.4-I nCD = -1.5A V GEN = -4.5V, V DD = -10V, R L = 10Ω, R G = 6Ω
Turn-On Delay Timet D(ON)-11.51-ns
Turn-On Rise Timet R-12.09-ns
Turn-Off Delay Timet D(OFF)-55.34-ns
Turn-Off Fall Timet F-27.54-ns

DMP2160UFDB-7 Absolute Maximum Ratings

CharacteristicSymbolValueUnit
Drain-Source VoltageV DSS-20V
Gate-Source VoltageV GSS±12V
Drain Current (Note 5)I D-3.8A
Pulsed Drain Current (Note 6)I DM-13A

DMP2160UFDB-7 Thermal Information

CharacteristicSymbolValueUnit
Power Dissipation (Note 5)P D1.4W
Thermal Resistance, Junction to AmbientR ← JA89° C/W
Operating and Storage Temperature RangeT J , T STG-55 to +150° C

DMP2160UFDB-7 Package Information

  • Case: U-DFN2020-6 (Type B)
  • Case Material: Molded Plastic, 'Green' Molding Compound; UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Connections: See Diagram
  • Terminals: Finish - NiPdAu Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4
  • Weight: 0.0065 grams (Approximate)

DMP2160UFDB-7 Ordering Information

Part NumberCasePackaging
DMP2160UFDB-7U-DFN2020-6 (Type B)3,000/Tape & Reel
DMP2160UFDB-7RU-DFN2020-6 (Type B)3,000/Tape & Reel

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
DMP2160UFDBDiodes IncorporatedU-DFN2020-6
DMP2160UFDB-7RDiodes IncorporatedU-DFN2020-6 (Type B)
DMP2160UFDBQDiodes Incorporated—

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All MOSFETs datasheetsAll Diodes datasheets (217)

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