FDC6320C

Part: FDC6320C — ON Semiconductor

Type: Dual N & P Channel Digital FET

Description: Dual N & P Channel logic level enhancement mode field effect transistors designed for low voltage load switching applications, featuring low on-state resistance and direct operation in 3 V circuits.

Operating Conditions:

• Operating temperature: -55 to 150 °C
• Gate threshold voltage: < 1.5 V (for 3 V circuits)

Absolute Maximum Ratings:

• Max drain-source voltage (N-Channel): 25 V
• Max drain-source voltage (P-Channel): -25 V
• Max continuous drain current (N-Channel): 0.22 A
• Max continuous drain current (P-Channel): -0.12 A
• Max junction/storage temperature: 150 °C

Key Specs:

• N-Ch Drain-Source Breakdown Voltage (BV DSS): 25 V (V GS = 0 V, I D = 250 μA)
• P-Ch Drain-Source Breakdown Voltage (BV DSS): -25 V (V GS = 0 V, I D = -250 μA)
• N-Ch Gate Threshold Voltage (V GS(th)): 0.65 V (min) to 1.5 V (max) (V DS =V GS , I D = 250 μA)
• P-Ch Gate Threshold Voltage (V GS(th)): -0.65 V (min) to -1.5 V (max) (V DS =V GS , I D = -250 μA)
• N-Ch Static Drain-Source On-Resistance (R DS(ON)): 5 Ω (max) (V GS = 2.7 V, I D = 0.2A)
• P-Ch Static Drain-Source On-Resistance (R DS(ON)): 13 Ω (max) (V GS = -2.7 V, I D = -0.05A)
• N-Ch Input Capacitance (C iss): 9.5 pF (typ) (V DS = 10 V, V GS = 0 V, f = 1.0MHz)
• P-Ch Input Capacitance (C iss): 11 pF (typ) (V DS = -10 V, V GS = 0 V, f = 1.0MHz)

Features:

• N-Ch 25 V, 0.22 A, R DS(ON) = 5 Ω @ V GS = 2.7 V.
• P-Ch 25 V, -0.12 A, R DS(ON) = 13 Ω @ V GS = -2.7 V.
• Very low level gate drive requirements allowing direct operation in 3 V circuits. V GS(th) < 1.5 V.
• Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
• Replace NPN & PNP digital transistors.

Applications:

• Load switching applications
• Replacement for bipolar digital transistors

Package:

• SOT-23
• SuperSOT™-8
• SO-8
• SOT-223
• SOIC-16

• N-Ch 25 V, 0.22 A, R DS(ON) = 5 Ω @ V GS = 2.7 V.
• P-Ch 25 V, -0.12 A, R DS(ON) = 13 Ω @ V GS = -2.7 V.
• Very low level gate drive requirements allowing direct operation in 3 V circuits. V GS(th) < 1.5 V.
• Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
• Replace NPN & PNP digital transistors.

SO-8

SOT-223

SOIC-16

Symbol	Parameter	Conditions	Type	Min	Typ	Max	Units
OFF CHARACTERISTICS	OFF CHARACTERISTICS	OFF CHARACTERISTICS	OFF CHARACTERISTICS	OFF CHARACTERISTICS	OFF CHARACTERISTICS	OFF CHARACTERISTICS	OFF CHARACTERISTICS
BV DSS	Drain-Source Breakdown Voltage	V GS = 0 V, I D = 250 μA	N-Ch	25			V
BV DSS	Drain-Source Breakdown Voltage	V GS = 0 V, I D = -250 μA	P-Ch	-25
∆ BV DSS / ∆ T J	Breakdown Voltage Temp. Coefficient	I D = 250 μA, Referenced to 25 o C	N-Ch		25		mV/ o C
∆ BV DSS / ∆ T J	Breakdown Voltage Temp. Coefficient	I D = -250 μA, Referenced to 25 o C	P-Ch		-20
I DSS	Zero Gate Voltage Drain Current	V DS = 20 V, V GS = 0 V,	N-Ch			1	μA
I DSS	Zero Gate Voltage Drain Current	T J = 55°C				10
I DSS	Zero Gate Voltage Drain Current	V DS =-20 V, V GS = 0 V,	P-Ch			-1	μA
I DSS	Zero Gate Voltage Drain Current	T J = 55°C				-10
I GSS	Gate - Body Leakage Current	V GS = 8 V, V DS =0V	N-Ch			100	nA
I GSS	Gate - Body Leakage Current	V GS = -8 V, V DS =0V	P-Ch			-100	nA
ONCHARACTERISTICS (Note 2)	ONCHARACTERISTICS (Note 2)	ONCHARACTERISTICS (Note 2)	ONCHARACTERISTICS (Note 2)	ONCHARACTERISTICS (Note 2)	ONCHARACTERISTICS (Note 2)	ONCHARACTERISTICS (Note 2)	ONCHARACTERISTICS (Note 2)
∆ V GS(th) / ∆ T J	Gate Threshold Voltage Temp. Coefficient	I D = 250 μA, Referenced to 25 o C	N-Ch		-2.1		mV/ o C
∆ V GS(th) / ∆ T J	Gate Threshold Voltage Temp. Coefficient	I D = -250 μA, Referenced to 25 o C	P-Ch		1.9
V GS(th)	Gate Threshold Voltage	V DS =V GS , I D = 250 μA	N-Ch	0.65	0.85	1.5	V
V GS(th)	Gate Threshold Voltage	V DS =V GS , I D = -250 μA	P-Ch	-0.65	-1	-1.5
R DS(ON)	Static Drain-Source On-Resistance	V GS = 2.7 V, I D = 0.2A	N-Ch		3.8	5	Ω
R DS(ON)	Static Drain-Source On-Resistance	T J =125°C			6.3	9
R DS(ON)	Static Drain-Source On-Resistance	V GS = 4.5 V, I D = 0.4A			3.1	4
R DS(ON)	Static Drain-Source On-Resistance	V GS = -2.7 V, I D = -0.05A	P-Ch		10.6	13
R DS(ON)	Static Drain-Source On-Resistance	T J =125°C			15	21
R DS(ON)	Static Drain-Source On-Resistance	V GS = -4.5 V, I D = -0.2A			7.9	10
I D(ON)	On-State Drain Current	V GS = 2.7 V, V DS =5V	N-Ch	0.2			A
I D(ON)	On-State Drain Current	V GS = -2.7 V, V DS = -5V	P-Ch	-0.05
g FS	Forward Transconductance	V DS = 5 V, I D = 0.4A	N-Ch		0.2		S
g FS	Forward Transconductance	V DS = -5 V, I D = -0.2A	P-Ch		0.135
DYNAMIC CHARACTERISTICS	DYNAMIC CHARACTERISTICS	DYNAMIC CHARACTERISTICS	DYNAMIC CHARACTERISTICS	DYNAMIC CHARACTERISTICS	DYNAMIC CHARACTERISTICS	DYNAMIC CHARACTERISTICS	DYNAMIC CHARACTERISTICS
C iss	Input Capacitance	N-Channel V DS = 10 V, V GS = 0 V,	N-Ch		9.5		pF
C iss	Input Capacitance	f = 1.0MHz	P-Ch		11
C oss	Output Capacitance	P-Channel V = -10 V, V = 0 V,	N-Ch		6		pF
C oss	Output Capacitance		P-Ch		7
C rss	Reverse Transfer Capacitance	DS GS f = 1.0MHz	N-Ch		1.3		pF
C rss	Reverse Transfer Capacitance		P-Ch		1.4

Figure 1. On-Region Characteristics .

Figure 1. On-Region Characteristics .

Figure 3. On-Resistance Variation with Temperature .

Figure 5. Transfer Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage .

Figure 4. On Resistance Variation with Gate-To- Source Voltage.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.