FQPF12N60C
600V N-Channel Power MOSFETThe FQPF12N60C is a 600v n-channel power mosfet from Fairchild Semiconductor. View the full FQPF12N60C datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
FQPF12N60C shares its datasheet with FQP12N60C, whose page lists every part number it covers.
Official FQPF12N60C datasheet (PDF) — the source this page was extracted from.
FQPF12N60C Key Specifications
| Parameter | Value |
|---|---|
| RDS(On) | 0.53 Ω typ, 0.65 Ω max @ VGS=10V, ID=6A |
| Gate Threshold Voltage | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | 48 nC typ, 63 nC max |
| Input Capacitance (Ciss) | 1760 pF typ |
| Gate-Source Voltage (VGSS) | ±30 V |
| Pulsed Drain Current (IDM) | 48 A |
| Drain-Source Voltage (VDSS) | 600 V |
| Operating Temperature Range | -55°C to +150°C |
| Power Dissipation (TC=25°C) | 51 W |
| Continuous Drain Current (TC=25°C) | 12 A (limited by junction temperature) |
| Reverse Transfer Capacitance (Crss) | 21 pF typ |
| Thermal Resistance Junction-To-Case | 2.43 °C/W |
| Continuous Drain Current (TC=100°C) | 7.4 A |
| Single Pulsed Avalanche Energy (EAS) | 870 mJ |
| Thermal Resistance Junction-To-Ambient | 62.5 °C/W |
FQPF12N60C Overview
Part: FQP12N60C / FQPF12N60C — Fairchild Semiconductor
Type: N-Channel MOSFET
Description: N-Channel enhancement mode power field effect transistor with 600V Drain-Source Voltage, 12A continuous drain current, and 0.65 Ω on-resistance, featuring low gate charge and fast switching.
Operating Conditions:
- Operating temperature: -55 to +150 °C
Absolute Maximum Ratings:
- Max continuous current: 12 A (Drain Current, T C = 25 ° C)
- Max junction/storage temperature: +150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BV DSS): 600 V (V GS = 0V, I D = 250 μ A)
- Zero Gate Voltage Drain Current (I DSS): 1 μ A (V DS = 600V, V GS = 0V)
- Gate Threshold Voltage (V GS(th)): 2.0 V min, 4.0 V max (V DS = V GS , I D = 250 μ A)
- Static Drain-Source On-Resistance (R DS(on)): 0.65 Ω max (V GS = 10V, I D = 6A)
- Total Gate Charge (Q g): 63 nC max (V DS = 400V, I D = 12A, V GS = 10V)
- Input Capacitance (C iss): 2290 pF max (V DS = 25V, V GS = 0V, f = 1.0MHz)
- Turn-On Delay Time (t d(on)): 70 ns max (V DD = 300V, I D = 12A, R G = 25 Ω)
- Peak Diode Recovery dv/dt: 4.5 V/ns
Features:
- 12A, 600V, R DS(on) = 0.65 Ω @V GS = 10 V
- Low gate charge (typical 48 nC)
- Low Crss (typical 21pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS compliant
Applications:
- High efficient switched mode power supplies
- Active power factor correction
- Electronic lamp ballast based on half bridge topology
Package:
- TO-220
- TO-220F
FQPF12N60C Features
- 12A, 600V, R DS(on) = 0.65 Ω @V GS = 10 V
- Low gate charge ( typical 48 nC)
- Low Crss ( typical 21pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS compliant
FQPF12N60C Electrical Characteristics
| Symbol | Parameter | Conditions | Min Typ | Max | Units | |
|---|---|---|---|---|---|---|
| Off Characteristics | Off Characteristics | Off Characteristics | Off Characteristics | Off Characteristics | Off Characteristics | Off Characteristics |
| BV DSS | Drain-Source Breakdown Voltage | V GS = 0V, I D = 250 μ A, T J = 25 ° | C | 600 -- | -- | V |
| ∆ BV DSS / ∆ T J | Breakdown Voltage Temperature Coefficient | I D = 250 μ A, Referenced to 25 ° C | -- 0.5 | -- | V/ ° C | |
| I DSS | Zero Gate Voltage Drain Current | V DS = 600V, V GS = 0V V DS = 480V, T C = 125 ° C | -- -- -- -- | 1 10 | μ A μ A | |
| I GSSF | Gate-Body Leakage Current, Forward | V GS = 30V, V DS = 0V | -- -- | 100 | nA | |
| I GSSR | Gate-Body Leakage Current, Reverse | V GS = -30V, V DS = 0V | -- -- | -100 | nA | |
| On Characteristics | On Characteristics | On Characteristics | On Characteristics | On Characteristics | On Characteristics | On Characteristics |
| V GS(th) | Gate Threshold Voltage | V DS = V GS , I D = 250 μ A | 2.0 -- | 4.0 | V | |
| R DS(on) | Static Drain-Source On-Resistance | V GS = 10V, I D = 6A | -- 0.53 | 0.65 | Ω | |
| g FS | Forward Transconductance | V DS = 40V, I D = 6A | (Note 4) | -- 13 | -- | S |
| Dynamic Characteristics | Dynamic Characteristics | Dynamic Characteristics | Dynamic Characteristics | Dynamic Characteristics | Dynamic Characteristics | Dynamic Characteristics |
| C iss | Input Capacitance | V DS = 25V, V GS = 0V, f = 1.0MHz | -- 1760 | 2290 | pF | |
| C oss | Output Capacitance | V DS = 25V, V GS = 0V, f = 1.0MHz | -- 182 | 235 | pF | |
| C rss | Reverse Transfer Capacitance | V DS = 25V, V GS = 0V, f = 1.0MHz | -- 21 | 28 | pF | |
| Switching Characteristics | Switching Characteristics | Switching Characteristics | Switching Characteristics | Switching Characteristics | Switching Characteristics | Switching Characteristics |
| t d(on) | Turn-On Delay Time | V DD = 300V, I D = 12A R G = 25 Ω | -- 30 | 70 | ns | |
| t r | Turn-On Rise Time | V DD = 300V, I D = 12A R G = 25 Ω | -- 85 | 180 | ns | |
| t d(off) | Turn-Off Delay Time | V DD = 300V, I D = 12A R G = 25 Ω | -- 140 | 280 | ns | |
| t f | Turn-Off Fall Time | V DD = 300V, I D = 12A R G = 25 Ω | (Note 4, 5) | -- 90 | 190 | ns |
| Q g | Total Gate Charge | V DS = 400V, I D = 12A V GS = 10V | -- 48 | 63 | nC | |
| Q gs | Gate-Source Charge | V DS = 400V, I D = 12A V GS = 10V | -- 8.5 | -- | nC | |
| Q gd | Gate-Drain Charge | V DS = 400V, I D = 12A V GS = 10V | (Note 4, 5) | -- 21 | -- | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | Drain-Source Diode Characteristics and Maximum Ratings | Drain-Source Diode Characteristics and Maximum Ratings | Drain-Source Diode Characteristics and Maximum Ratings | Drain-Source Diode Characteristics and Maximum Ratings | Drain-Source Diode Characteristics and Maximum Ratings | Drain-Source Diode Characteristics and Maximum Ratings |
| I S | Maximum Continuous Drain-Source Diode Forward Current | Maximum Continuous Drain-Source Diode Forward Current | -- -- | 12 | A | |
| I SM | Maximum Pulsed Drain-Source Diode Forward Current | Maximum Pulsed Drain-Source Diode Forward Current | -- -- | 48 | A | |
| V SD | Drain-Source Diode Forward Voltage | V GS = 0V, I S = 12A | -- -- | 1.4 | V | |
| t rr | Reverse Recovery Time | V GS = 0V, I S = 12A dI /dt =100A/ μ s | -- 420 | -- | ns | |
| Q rr | Reverse Recovery Charge | F | (Note 4) | -- 4.9 | -- | μ C |
FQPF12N60C Absolute Maximum Ratings
| Symbol | Parameter | Parameter | Parameter | FQP12N60C | FQPF12N60C | Unit |
|---|---|---|---|---|---|---|
| V DSS | Drain-Source Voltage | Drain-Source Voltage | Drain-Source Voltage | 600 | 600 | V |
| I D | Drain Current | - Continuous (T C = 25 ° C) - Continuous (T C = 100 ° C) | - Continuous (T C = 25 ° C) - Continuous (T C = 100 ° C) | 12 7.4 | 12* 7.4* | A A |
| I DM | Drain Current | - Pulsed | (Note 1) | 48 | 48* | A |
| V GSS | Gate-Source voltage | Gate-Source voltage | Gate-Source voltage | ± 30 | ± 30 | V |
| E AS | Single Pulsed Avalanche Energy | Single Pulsed Avalanche Energy | (Note 2) | 870 | 870 | mJ |
| I AR | Avalanche Current | Avalanche Current | (Note 1) | 12 | 12 | A |
| E AR | Repetitive Avalanche Energy | Repetitive Avalanche Energy | (Note 1) | 22.5 | 22.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | Peak Diode Recovery dv/dt | (Note 3) | 4.5 | 4.5 | V/ns |
| P D | Power Dissipation | (T C = 25 ° C) - Derate above 25 ° C | (T C = 25 ° C) - Derate above 25 ° C | 225 1.78 | 51 0.41 | W W/ ° C |
| T J, T STG | Operating and Storage Temperature Range | Operating and Storage Temperature Range | Operating and Storage Temperature Range | -55 to +150 | -55 to +150 | ° C |
| T L | Maximum Lead Temperature for Soldering Purpose, 1/8' from Case for 5 Seconds | Maximum Lead Temperature for Soldering Purpose, 1/8' from Case for 5 Seconds | Maximum Lead Temperature for Soldering Purpose, 1/8' from Case for 5 Seconds | 300 | 300 | ° C |
*Drain current limited by maximum junction temperature
FQPF12N60C Thermal Information
| Symbol | Parameter | FQP12N60C | FQPF12N60C | Unit |
|---|---|---|---|---|
| R θ JC | Thermal Resistance, Junction-to-Case | 0.56 | 2.43 | ° C/W |
| R θ JS | Thermal Resistance, Case-to-Sink Typ. | 0.5 | -- | ° C/W |
| R θ JA | Thermal Resistance, Junction-to-Ambient | 62.5 | 62.5 | ° C/W |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| FQP12N60C | Fairchild Semiconductor | TO-220 |
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All MOSFETs datasheetsAll Fairchild Semiconductor datasheets (5)
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