Part: FQP30N06L — Fairchild Semiconductor

Type: N-Channel MOSFET

Description: 60V N-Channel enhancement mode power MOSFET with 32A continuous drain current, 0.035 Ω on-resistance at VGS=10V, and 175 °C maximum junction temperature, suitable for low voltage applications like automotive and DC/DC converters.

Operating Conditions:

• Operating temperature: -55 to +175 °C
• Gate-Source Voltage: ±20 V

Absolute Maximum Ratings:

• Max supply voltage: 60 V (Drain-Source Voltage)
• Max continuous current: 32 A (Drain Current at T_C = 25°C)
• Max junction/storage temperature: 175 °C

Key Specs:

• Drain-Source Breakdown Voltage (BV_DSS): 60 V (min) at V_GS = 0 V, I_D = 250 μA
• Gate Threshold Voltage (V_GS(th)): 1.0 V (min) to 2.5 V (max) at V_DS = V_GS, I_D = 250 μA
• Static Drain-Source On-Resistance (R_DS(on)): 0.035 Ω (max) at V_GS = 10 V, I_D = 16 A
• Input Capacitance (C_iss): 1040 pF (max) at V_DS = 25 V, V_GS = 0 V, f = 1.0 MHz
• Reverse Transfer Capacitance (C_rss): 65 pF (max) at V_DS = 25 V, V_GS = 0 V, f = 1.0 MHz
• Total Gate Charge (Q_g): 20 nC (max) at V_DS = 48 V, I_D = 32 A, V_GS = 5 V
• Turn-On Delay Time (t_d(on)): 40 ns (max) at V_DD = 30 V, I_D = 16 A, R_G = 25 Ω
• Thermal Resistance, Junction-to-Case (R_θJC): 1.90 °C/W (max)

Features:

• 32A, 60V, R_DS(on) = 0.035 Ω @V_GS = 10 V
• Low gate charge (typical 15 nC)
• Low C_rss (typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 °C maximum junction temperature rating

Applications:

• Automotive
• DC/DC converters
• High efficiency switching for power management in portable and battery operated products

Package:

• 32A, 60V, R DS(on) = 0.035 Ω @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 ° C maximum junction temperature rating

T C = 25°C unless otherwise noted

Symbol	Parameter	Parameter	Parameter	FQP30N06L	Units
V DSS	Drain-Source Voltage	Drain-Source Voltage	Drain-Source Voltage	60	V
I D	Drain Current	- Continuous (T C = 25°C)	- Continuous (T C = 25°C)	32	A
		- Continuous (T C = 100°C)	- Continuous (T C = 100°C)	22.6	A
I DM	Drain Current	- Pulsed	(Note 1)	128	A
V GSS	Gate-Source Voltage	Gate-Source Voltage	Gate-Source Voltage	± 20	V
E AS	Single Pulsed Avalanche Energy	Single Pulsed Avalanche Energy	(Note 2)	350	mJ
I AR	Avalanche Current	Avalanche Current	(Note 1)	32	A
E AR	Repetitive Avalanche Energy	Repetitive Avalanche Energy	(Note 1)	7.9	mJ
dv/dt	Peak Diode Recovery dv/dt	Peak Diode Recovery dv/dt	(Note 3)	7.0	V/ns
P D	Power Dissipation (T C = 25°C)	Power Dissipation (T C = 25°C)	Power Dissipation (T C = 25°C)	79	W
	- Derate above 25°C	- Derate above 25°C	- Derate above 25°C	0.53	W/°C
T J , T STG	Operating and Storage Temperature Range	Operating and Storage Temperature Range	Operating and Storage Temperature Range	-55 to +175	°C
T L	Maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds	Maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds	Maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds	300	°C

FQP30N06L – TO-220 Package Pinout

Pin Number	Pin Name	Type	Description
1	G	I	Gate
2	D	I/O	Drain
3	S	I/O	Source

Notes

• Package: TO-220 (3-pin)
• Device Type: N-Channel Enhancement Mode Power MOSFET
• Pin Configuration: Standard TO-220 layout with Gate (left), Drain (center/tab), Source (right)
• The metal tab on the back of the package is electrically connected to the Drain (pin 2)

Symbol	Parameter	Typ	Max	Units
R θ JC	Thermal Resistance, Junction-to-Case	--	1.90	°C / W
R θ CS	Thermal Resistance, Case-to-Sink	0.5	--	°C / W
R θ JA	Thermal Resistance, Junction-to-Ambient	--	62.5	°C / W

May 2001

Electrical Characteristics T C = 25°C unless otherwise noted	Electrical Characteristics T C = 25°C unless otherwise noted	Electrical Characteristics T C = 25°C unless otherwise noted	Electrical Characteristics T C = 25°C unless otherwise noted	Electrical Characteristics T C = 25°C unless otherwise noted	Electrical Characteristics T C = 25°C unless otherwise noted	Electrical Characteristics T C = 25°C unless otherwise noted
Symbol	Parameter	Test Conditions	Min	Typ	Max	Units
Off Characteristics	Off Characteristics	Off Characteristics	Off Characteristics	Off Characteristics	Off Characteristics	Off Characteristics
BV DSS	Drain-Source Breakdown Voltage	V GS = 0 V, I D = 250 μ A	60	--	--	V
∆ BV DSS / ∆ T J	Breakdown Voltage Temperature Coefficient	I D = 250 μ A, Referenced to 25°C	--	0.06	--	V/°C
I DSS		V DS = 60 V, V GS = 0 V	--	--	1	μ A
	Zero Gate Voltage Drain Current	V DS = 48 V, T C = 150°C	--	--	10	μ A
I GSSF	Gate-Body Leakage Current, Forward	V GS = 20 V, V DS = 0 V	--	--	100	nA
I GSSR	Gate-Body Leakage Current, Reverse	V GS = -20 V, V DS = 0 V	--	--	-100	nA
On Characteristics	On Characteristics	On Characteristics	On Characteristics	On Characteristics	On Characteristics	On Characteristics
V GS(th)	Gate Threshold Voltage	V DS = V GS , I D = 250 μ A	1.0	--	2.5	V
R DS(on)	Static Drain-Source On-Resistance	V GS = 10 V, I D = 16 A V GS =5V,I D =16A	-- --	0.027 0.035	0.035 0.045	Ω
g FS	Forward Transconductance	V DS = 25 V, I D = 16 A (Note 4)	--	24	--	S
Dynamic Characteristics	Dynamic Characteristics	Dynamic Characteristics	Dynamic Characteristics	Dynamic Characteristics	Dynamic Characteristics	Dynamic Characteristics
C iss	Input Capacitance	V DS = 25 V, V GS = 0 V, f = 1.0 MHz	--	800	1040	pF
C oss	Output Capacitance		--	270	350	pF
C rss	Reverse Transfer Capacitance		--	50	65	pF
Switching Characteristics	Switching Characteristics	Switching Characteristics	Switching Characteristics	Switching Characteristics	Switching Characteristics	Switching Characteristics
t d(on)	Turn-On Delay Time	V DD = 30 V, I D = 16 A, R G = 25 Ω	--	15	40	ns
t r	Turn-On Rise Time		--	210	430	ns
t d(off)	Turn-Off Delay Time		--	60	130	ns
t f	Turn-Off Fall Time	(Note 4, 5)	--	110	230	ns
Q g	Total Gate Charge	V DS = 48 V, I D = 32 A,	--	15	20	nC
Q gs	Gate-Source Charge	V GS = 5 V	--	3.5	--	nC
Q gd	Gate-Drain Charge	(Note 4, 5)	--	8.5	--	nC
Drain-Source Diode Characteristics and Maximum Ratings	Drain-Source Diode Characteristics and Maximum Ratings	Drain-Source Diode Characteristics and Maximum Ratings	Drain-Source Diode Characteristics and Maximum Ratings	Drain-Source Diode Characteristics and Maximum Ratings	Drain-Source Diode Characteristics and Maximum Ratings	Drain-Source Diode Characteristics and Maximum Ratings
I S	Maximum Continuous Drain-Source Diode Forward Current	Maximum Continuous Drain-Source Diode Forward Current	--	--	32	A
I SM	Maximum Pulsed Drain-Source Diode Forward Current	Maximum Pulsed Drain-Source Diode Forward Current	--	--	128	A
V SD	Drain-Source Diode Forward Voltage	V GS = 0 V, I S = 32 A	--	--	1.5	V
t rr	Reverse Recovery Time	V GS = 0 V, I S = 32 A,	--	60	--	ns
Q rr	Reverse Recovery Charge	dI F / dt = 100 A/ μ s (Note 4)	--	90	--	nC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 400 μ H, I AS = 32A, V DD = 25V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 32A, di/dt ≤ 300A/us, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%	Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 400 μ H, I AS = 32A, V DD = 25V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 32A, di/dt ≤ 300A/us, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%	Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 400 μ H, I AS = 32A, V DD = 25V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 32A, di/dt ≤ 300A/us, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%	Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 400 μ H, I AS = 32A, V DD = 25V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 32A, di/dt ≤ 300A/us, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%	Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 400 μ H, I AS = 32A, V DD = 25V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 32A, di/dt ≤ 300A/us, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%	Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 400 μ H, I AS = 32A, V DD = 25V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 32A, di/dt ≤ 300A/us, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%	Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 400 μ H, I AS = 32A, V DD = 25V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 32A, di/dt ≤ 300A/us, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%

FQP30N06L

MPN	Package	Temperature Range	Packing
FQP30N06L	N/A	-55 to +175 °C	N/A