FQP30N06L

Part: FQP30N06L — Fairchild Semiconductor (now part of ON Semiconductor)

Type: N-Channel Enhancement Mode Power MOSFET (QFET)

Description: 60 V, 32 A N-channel power MOSFET with 35 mΩ max RDS(on) at VGS = 10 V, 15 nC typical gate charge and 175°C maximum junction temperature rating.

Operating Conditions:

• Supply voltage: not applicable
• Operating temperature: -55 to +175 °C (TJ, per the Absolute Maximum Ratings table)
• Gate-source voltage: ±20 V max; drain-source voltage: 60 V max

Absolute Maximum Ratings:

• Drain-source voltage (VDSS): 60 V
• Gate-source voltage (VGSS): ±20 V
• Continuous drain current: 32 A (TC = 25°C); 22.6 A (TC = 100°C)
• Pulsed drain current (IDM): 128 A
• Power dissipation: 79 W (TC = 25°C), derate 0.53 W/°C above 25°C
• Single pulsed avalanche energy (EAS): 350 mJ
• Operating and storage temperature: -55 to +175 °C
• Lead soldering temperature: 300 °C (1/8" from case, 5 s)

Key Specs:

• RDS(on): 0.027 Ω typ / 0.035 Ω max (VGS = 10 V, ID = 16 A); 0.035 Ω typ / 0.045 Ω max (VGS = 5 V, ID = 16 A)
• Gate threshold voltage VGS(th): 1.0–2.5 V (VDS = VGS, ID = 250 μA)
• Breakdown voltage BVDSS: 60 V min (VGS = 0 V, ID = 250 μA)
• IDSS: 1 μA max (VDS = 60 V, VGS = 0 V); 10 μA max (VDS = 48 V, TC = 150°C)
• Total gate charge Qg: 15 nC typ, 20 nC max (VDS = 48 V, ID = 32 A, VGS = 5 V)
• Capacitances (VDS = 25 V, VGS = 0 V, 1 MHz): Ciss 800 pF typ, Coss 270 pF typ, Crss 50 pF typ
• Switching (VDD = 30 V, ID = 16 A, RG = 25 Ω): td(on) 15 ns, tr 210 ns, td(off) 60 ns, tf 110 ns (typ)
• Forward transconductance gFS: 24 S typ (VDS = 25 V, ID = 16 A)
• Body diode: VSD 1.5 V max (IS = 32 A); trr 60 ns typ, Qrr 90 nC typ
• Thermal resistance: RθJC 1.90 °C/W max, RθJA 62.5 °C/W max

Features:

• 32 A, 60 V, RDS(on) = 35 mΩ (max) at VGS = 10 V, ID = 16 A
• Low gate charge (typ. 15 nC)
• Low Crss (typ. 50 pF)
• 100% avalanche tested
• 175°C maximum junction temperature rating

Applications:

• Switched mode power supplies
• Audio amplifiers
• DC motor control
• Variable switching power applications

Package:

• TO-220 (tube, 50 units)

• 32 A, 60 V, R DS(on) = 35 m Ω (Max.) @ V GS = 10 V, I D = 16 A
• Low Gate Charge (Typ. 15 nC)
• Low Crss (Typ. 50 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating

T C = 25°C unless otherwise noted.

Symbol	Parameter	Parameter	Parameter	FQP30N06L	Unit
V DSS	Drain-Source Voltage	Drain-Source Voltage	Drain-Source Voltage	60	V
I D	Drain Current	- Continuous (T C = 25°C)	- Continuous (T C = 25°C)	32	A
		- Continuous (T C = 100°C)	- Continuous (T C = 100°C)	22.6	A
I DM	Drain Current	- Pulsed	(Note 1)	128	A
V GSS	Gate-Source Voltage	Gate-Source Voltage	Gate-Source Voltage	± 20	V
E AS	Single Pulsed Avalanche Energy	Single Pulsed Avalanche Energy	(Note 2)	350	mJ
I AR	Avalanche Current	Avalanche Current	(Note 1)	32	A
E AR	Repetitive Avalanche Energy	Repetitive Avalanche Energy	(Note 1)	7.9	mJ
dv/dt	Peak Diode Recovery dv/dt	Peak Diode Recovery dv/dt	(Note 3)	7.0	V/ns
P D	Power Dissipation (T C = 25°C)	Power Dissipation (T C = 25°C)	Power Dissipation (T C = 25°C)	79	W
	- Derate above 25°C	- Derate above 25°C	- Derate above 25°C	0.53	W/°C
T J , T STG	Operating and Storage Temperature Range	Operating and Storage Temperature Range	Operating and Storage Temperature Range	-55 to +175	°C
T L	Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds	Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds	Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds	300	°C

Symbol	Parameter	FQP30N06L	Unit
R θ JC	Thermal Resistance, Junction-to-Case, Max.	1.90	°C / W
R θ JA	Thermal Resistance, Junction-to-Ambient, Max.	62.5	°C / W

Part Number	Part Number		Package	Packing Method	Size Tape N/A	Size Tape N/A	Width Quantity	Width Quantity
FQP30N06L	FQP30N06L		TO-220	Tube			50	units
Electrical Characteristics T C = 25°C unless otherwise noted.	Electrical Characteristics T C = 25°C unless otherwise noted.	Electrical Characteristics T C = 25°C unless otherwise noted.	Electrical Characteristics T C = 25°C unless otherwise noted.	Electrical Characteristics T C = 25°C unless otherwise noted.	Electrical Characteristics T C = 25°C unless otherwise noted.	Electrical Characteristics T C = 25°C unless otherwise noted.	Electrical Characteristics T C = 25°C unless otherwise noted.	Electrical Characteristics T C = 25°C unless otherwise noted.	Electrical Characteristics T C = 25°C unless otherwise noted.
Symbol	Symbol	Parameter	Parameter	Test Conditions	Min	Typ	Max	Unit
Off Characteristics	Off Characteristics	Off Characteristics	Off Characteristics	Off Characteristics	Off Characteristics	Off Characteristics	Off Characteristics	Off Characteristics	Off Characteristics
BV DSS	Drain-Source Breakdown Voltage	Drain-Source Breakdown Voltage	Drain-Source Breakdown Voltage	V GS = 0 V, I D = 250 μ A	60	--	--	V
∆ BV DSS / ∆ T J	Breakdown Voltage Temperature Coefficient	Breakdown Voltage Temperature Coefficient	Breakdown Voltage Temperature Coefficient	I D = 250 μ A, Referenced to 25°C	--	0.06	--	V/°C
I DSS				V DS = 60 V, V GS = 0 V	--	--	1	μ A
	Zero Gate Voltage Drain Current	Zero Gate Voltage Drain Current	Zero Gate Voltage Drain Current	V DS = 48 V, T C = 150°C	--	--	10	μ A
I GSSF	Gate-Body Leakage Current, Forward	Gate-Body Leakage Current, Forward	Gate-Body Leakage Current, Forward	V GS = 20 V, V DS = 0 V	--	--	100	nA
I GSSR	Gate-Body Leakage Current, Reverse	Gate-Body Leakage Current, Reverse	Gate-Body Leakage Current, Reverse	V GS = -20 V, V DS = 0 V	--	--	-100	nA
On Characteristics	On Characteristics	On Characteristics	On Characteristics	On Characteristics	On Characteristics	On Characteristics	On Characteristics	On Characteristics	On Characteristics
V GS(th)	Gate Threshold Voltage	Gate Threshold Voltage	Gate Threshold Voltage	V DS = V GS , I D = 250 μ A	1.0	--	2.5	V
R DS(on)	Static Drain-Source On-Resistance	Static Drain-Source On-Resistance	Static Drain-Source On-Resistance	V GS = 10 V, I D = 16 A V GS =5V,I D =16A	-- --	0.027 0.035	0.035 0.045	Ω
g FS	Forward Transconductance	Forward Transconductance	Forward Transconductance	V DS = 25 V, I D = 16 A	--	24	--	S
Dynamic Characteristics	Dynamic Characteristics	Dynamic Characteristics	Dynamic Characteristics	Dynamic Characteristics	Dynamic Characteristics	Dynamic Characteristics	Dynamic Characteristics	Dynamic Characteristics	Dynamic Characteristics
C iss	Input Capacitance	Input Capacitance	Input Capacitance		--	800	1040	pF
C oss	Output Capacitance	Output Capacitance	Output Capacitance	V DS = 25 V, V GS = 0 V, f = 1.0 MHz	--	270	350	pF
C rss	Reverse Transfer Capacitance	Reverse Transfer Capacitance	Reverse Transfer Capacitance		--	50	65	pF
Switching Characteristics	Switching Characteristics	Switching Characteristics	Switching Characteristics	Switching Characteristics	Switching Characteristics	Switching Characteristics	Switching Characteristics	Switching Characteristics	Switching Characteristics
t d(on)	Turn-On Delay Time	Turn-On Delay Time	Turn-On Delay Time		--	15	40	ns
t r	Turn-On Rise Time	Turn-On Rise Time	Turn-On Rise Time	V DD = 30 V, I D = 16 A, R = 25 Ω	--	210	430	ns
t d(off)	Turn-Off Delay Time	Turn-Off Delay Time	Turn-Off Delay Time	G	--	60	130	ns
t f	Turn-Off Fall Time	Turn-Off Fall Time	Turn-Off Fall Time	(Note 4)	--	110	230	ns
Q g	Total Gate Charge	Total Gate Charge	Total Gate Charge	V = 48 V, I = 32 A,	--	15	20	nC
Q gs	Gate-Source Charge	Gate-Source Charge	Gate-Source Charge	DS D V GS = 5 V	--	3.5	--	nC
Q gd	Gate-Drain Charge	Gate-Drain Charge	Gate-Drain Charge	(Note 4)	--	8.5	--	nC
Drain-Source Diode Characteristics and Maximum Ratings	Drain-Source Diode Characteristics and Maximum Ratings	Drain-Source Diode Characteristics and Maximum Ratings	Drain-Source Diode Characteristics and Maximum Ratings	Drain-Source Diode Characteristics and Maximum Ratings	Drain-Source Diode Characteristics and Maximum Ratings	Drain-Source Diode Characteristics and Maximum Ratings	Drain-Source Diode Characteristics and Maximum Ratings	Drain-Source Diode Characteristics and Maximum Ratings	Drain-Source Diode Characteristics and Maximum Ratings
I S	Maximum Continuous Drain-Source Diode Forward Current	Maximum Continuous Drain-Source Diode Forward Current	Maximum Continuous Drain-Source Diode Forward Current	Maximum Continuous Drain-Source Diode Forward Current	--	--	32	A
I SM	Maximum Pulsed Drain-Source Diode Forward Current	Maximum Pulsed Drain-Source Diode Forward Current	Maximum Pulsed Drain-Source Diode Forward Current	Maximum Pulsed Drain-Source Diode Forward Current	--	--	128	A
V SD	Drain-Source Diode Forward Voltage	Drain-Source Diode Forward Voltage	Drain-Source Diode Forward Voltage	V GS = 0 V, I S = 32 A	--	--	1.5	V
t rr	Reverse Recovery Time	Reverse Recovery Time	Reverse Recovery Time	V GS = 0 V, I S = 32 A,	--	60	--	ns
Q rr	Reverse Recovery Charge	Reverse Recovery Charge	Reverse Recovery Charge	dI F / dt = 100 A/ μ s	--	90	--	nC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 400 μ H, I AS = 32 A, V DD = 25 V, R G = 25 Ω, starting T J = 25°C. 3. I ≤ 32 A, di/dt ≤ 300 A/us, V ≤ BV starting T = 25°C.	Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 400 μ H, I AS = 32 A, V DD = 25 V, R G = 25 Ω, starting T J = 25°C. 3. I ≤ 32 A, di/dt ≤ 300 A/us, V ≤ BV starting T = 25°C.	Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 400 μ H, I AS = 32 A, V DD = 25 V, R G = 25 Ω, starting T J = 25°C. 3. I ≤ 32 A, di/dt ≤ 300 A/us, V ≤ BV starting T = 25°C.	Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 400 μ H, I AS = 32 A, V DD = 25 V, R G = 25 Ω, starting T J = 25°C. 3. I ≤ 32 A, di/dt ≤ 300 A/us, V ≤ BV starting T = 25°C.	Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 400 μ H, I AS = 32 A, V DD = 25 V, R G = 25 Ω, starting T J = 25°C. 3. I ≤ 32 A, di/dt ≤ 300 A/us, V ≤ BV starting T = 25°C.	Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 400 μ H, I AS = 32 A, V DD = 25 V, R G = 25 Ω, starting T J = 25°C. 3. I ≤ 32 A, di/dt ≤ 300 A/us, V ≤ BV starting T = 25°C.	Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 400 μ H, I AS = 32 A, V DD = 25 V, R G = 25 Ω, starting T J = 25°C. 3. I ≤ 32 A, di/dt ≤ 300 A/us, V ≤ BV starting T = 25°C.	Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 400 μ H, I AS = 32 A, V DD = 25 V, R G = 25 Ω, starting T J = 25°C. 3. I ≤ 32 A, di/dt ≤ 300 A/us, V ≤ BV starting T = 25°C.	Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 400 μ H, I AS = 32 A, V DD = 25 V, R G = 25 Ω, starting T J = 25°C. 3. I ≤ 32 A, di/dt ≤ 300 A/us, V ≤ BV starting T = 25°C.	Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 400 μ H, I AS = 32 A, V DD = 25 V, R G = 25 Ω, starting T J = 25°C. 3. I ≤ 32 A, di/dt ≤ 300 A/us, V ≤ BV starting T = 25°C.