Discrete Semiconductors Datasheets
588 Discrete Semiconductors datasheets read into specs, pinouts and ratings. Parts from onsemi, Diodes and Infineon Technologies.
Discrete Semiconductors datasheets, page 9
588 parts · page 9 of 20. Most used first, then by part number.
FQP12N60C
Fairchild Semiconductor
12A, 600V N-channel enhancement mode planar stripe DMOS power MOSFET with 0.65 ohm RDS(on), suited for switched mode power supplies, active PFC and lamp ballasts
FQP30N06L
Fairchild Semiconductor
N-Channel enhancement mode power field effect transistor (MOSFET) optimized for low on-state resistance, superior switching performance, and high energy pulse withstand capability, suitable for automotive, DC/DC converters, and power manage
FQPF12N60C
Fairchild Semiconductor
600V, 12A N-channel enhancement mode planar stripe DMOS power MOSFET with RDS(on) of 0.65 Ω max, low gate charge and 100% avalanche testing, suited to SMPS, active PFC and lamp ballasts.
FS8205A
EVVO
DUAL N-CHANNEL ENHANCEMENT MODE
GSBAT46M
Good-Ark
Diode, Schottky, 150mA, 100V, SOD-523
HD01
Diodes Incorporated
0.8A surface-mount glass passivated bridge rectifier in MiniDIP package with 100V reverse voltage rating and 30A surge capability
HD01-T
Diodes Incorporated
Bridge Rectifiers 0.8A 100V
HD02
Diodes Incorporated
0.8A surface-mount glass passivated bridge rectifier, 200V repetitive peak reverse voltage, in MiniDIP package
HD04
Diodes Incorporated
0.8A Surface-Mount Glass Passivated Bridge Rectifier
HD06
Diodes Incorporated
0.8A surface-mount glass passivated bridge rectifier in MiniDIP package; HD06 variant rated for 600V peak repetitive reverse voltage.
HL20N06D
HL Microelectronics
60V, 20A N-channel trench power MOSFET with 28mΩ typical RDS(on), super low gate charge and fast switching for DC-DC converters and synchronous rectification
HSBB6115
Huashuo
-60V, -26A P-channel trench power MOSFET with 20 mΩ typical RDS(ON), low gate charge and 100% EAS guaranteed, intended for synchronous buck converter applications.
IPP110N20N3
Infineon Technologies
OptiMOS 3 200V N-channel normal-level power MOSFET with 11 mΩ max on-resistance and 88 A continuous drain current, ideal for high-frequency switching and synchronous rectification
IPP110N20N3GXKSA1
Infineon Technologies
N-channel OptiMOS 3 Power MOSFET with very low on-resistance, high operating temperature, ideal for high-frequency switching and synchronous rectification.
IPT015N10N5
Infineon Technologies
MOSFETs IFX FET >80 - 100V
IRF3205
International Rectifier
55V, 110A N-channel HEXFET power MOSFET with 8.0mΩ max on-resistance, fast switching, 175°C rating and full avalanche rating
IRF3205L
International Rectifier
55V, 110A N-channel HEXFET power MOSFET with 8.0 mOhm max on-resistance, fast switching and fully avalanche rated; IRF3205L is the through-hole TO-262 version.
IRF3205LPBF
International Rectifier
55V, 110A HEXFET N-channel power MOSFET with 8.0 mOhm max on-resistance, 175 C operating temperature, fast switching and full avalanche rating (through-hole TO-262 version)
IRF3205SPBF
International Rectifier
Advanced HEXFET Power MOSFET with ultra-low on-resistance, dynamic dv/dt rating, and 175°C operating temperature, suitable for a wide variety of efficient and reliable power applications.
IRF540N
Infineon Technologies
IRF540NPBF
Infineon Technologies
MOSFET N-CH 100V 33A TO220AB
IRF540NT
Infineon Technologies
IRFML8244
Infineon Technologies
N-Channel HEXFET Power MOSFET designed for load/system switching applications, featuring low on-resistance.
IRFML9244
Infineon Technologies
30V HEXFET power MOSFET in a Micro3 (SOT-23) package with low RDS(on), intended for load/system switch applications
IRFP260N
International Rectifier
200V, 50A HEXFET N-channel power MOSFET with 0.04 ohm RDS(on), fast switching and fully avalanche rated in a TO-247AC package
IRFP260NPBF
International Rectifier
Fifth Generation HEXFET Power MOSFET from International Rectifier with extremely low on-resistance, fast switching speed, and ruggedized design for a wide variety of applications.
IRFP4368
Infineon Technologies
75V, 350A (silicon limited) HEXFET N-channel power MOSFET with 1.46 mΩ typical RDS(on), designed for synchronous rectification, UPS and high-frequency hard-switched circuits
IRFP4368PBF
Infineon Technologies
High-efficiency N-channel HEXFET Power MOSFET designed for synchronous rectification, UPS, and high-speed power switching applications.
IRFR/FU024N
Infineon Technologies
IRFR024N
Infineon Technologies